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Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

We investigate the temperature dependent (83 K≤T≤523 K) frequency shift of 2Ag1 and 1Eg2 phonon modes in the three dimensional topological insulator Bi2Se3, using Raman spectroscopy. The high quality single crystals of Bi2Se3 were grown using a modified Bridgman technique and characterized by Laue diffraction and high resolution transmission electron microscopy. A significant broadening in the line shape and red-shift in the frequencies were observed with increase in temperature. Polarized Raman scattering measurement shows a strong polarization effect of Ag1 and Ag2 phonon modes which confirms the good quality single crystals of Bi2Se3. Temperature co-efficient for A1g1, Eg2, and A1g2 modes was estimated to be −1.44 × 10−2, −1.94 × 10−2, and −1.95 × 10−2 cm−1∕K, respectively. Our results shed light on anharmonic properties of Bi2Se3.

Nickel oxide crystalline nano flakes (NONFs)—only about 10 nm wide—were produced using a simple and inexpensive chemistry method followed by a short annealing in ambient air. In a first step, Ni(OH)2 sheets were synthesized by adding sodium hydroxide (NaOH) drop-wise in a Ni(NO3)2 aqueous solution that was then sonicated for up to 60 min, washed and vigorously stirred overnight in deionized water. In a second step, the products of this reaction were annealed in ambient air in the temperature range 285–450 °C producing the desired NONFs. The products were characterized using x-ray diffraction, scanning electron microscopy and high resolution transmission electron microscopy including electron diffraction and electron energy-loss spectroscopy. Electrochemical investigations showed that anodes made of these NONFs provided significantly higher discharge capacities (70 to 100% higher) compared to commercial nanometric NiO nanopowder used under the same conditions. Moreover, these NONFs had higher initial capacity retentions at both low and high current densities compared to the same NiO nanopowder.

Free standing graphene-diamond hybrid films have been fabricated using saturated hydrocarbon polymers as seeding material by hot filament chemical vapor deposition technique. The films are characterized with x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and electron energy loss spectroscopy (EELS). The XRD shows the characteristic diffraction peaks of both diamond and graphene. The Raman spectrum shows the characteristic band of diamond at 1332 cm−1 and D, G, and 2D bands of graphene at 1349, 1592, and 2687 cm−1, respectively. Both SEM and TEM depict the presence of diamond and graphene in the films. The EELS recorded in the carbon K-edge region also shows the signature peaks of diamond and graphene. The free standing hybrid films exhibit a remarkably low turn-on field of about 2.4 V/μm and a high emission current density of 0.1 mA/cm2. Furthermore, emission currents are stable over the period of 7 days. The superior field emission...

Diamond has many potential electronic applications, but the diamond seeding methods are generally harsh on the substrates rendering them unsuitable for integration in electronics. We report a non-abrasive, scalable and economic process of diamond film seeding using kitchen-wrap polyethylene employing hot filament chemical vapour reaction of H2S/CH4/H2 gas mixtures on Cu substrates. The fabricated diamond films were characterized with scanning electron microscopy, transmission electron microscopy and Raman spectroscopy, which confirm that the deposited film consists of a microcrystalline diamond of size in the range 0.5–1.0 µm. The synthesized diamond films exhibit a turn-on field of about 8.5 V µm−1 and long-term stability. Diamond film synthesis using polyethylene will enable the integration of diamond heat sinks into high-power and high-temperature electronic devices.