190 results on '"Magri, Rita"'
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52. Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation
53. THEORETICAL STUDIES OF ABSORPTION, EMISSION AND GAIN IN SILICON NANOSTRUCTURES
54. Step energy and step interactions on the reconstructed GaAs(001) surface
55. Role of interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2
56. Density functional calculations of the structural, electronic and optical properties of semiconductor nanostructures
57. Anticrossing and coupling of light-hole and heavy-hole states in (001) GaAs/AlxGa1-xAs heterostructures
58. The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs
59. Empirical Pseudopotential Modeling of Antimonide-Based III-V Structures
60. Role of surface structural motifs on the stability and reflectance anisotropy spectra of Sb-rich GaSb(001) reconstructions
61. Electron electron correlation for Sb on GaAs(110)
62. Surface Effects on the Atomic and Electronic Structure of Unpassivated GaAs Nanowires
63. Optical properties of GaSb(001)-c(2 × 6): The role of surface antisite defects
64. Spontaneous Formation of Surface Antisite Defects in the Stabilization of the Sb-Rich GaSb(001) Surface
65. Effects of wetting layer structure on surface phase stability and on indium surface diffusion
66. Structure and optical properties of the Sb-stabilized GaSb(001) surface
67. Structural stability of clean GaAs nanowires grown along the [111] direction
68. Surface compositional profiles of self-assembled InAs∕GaAs quantum rings
69. In adsorption and diffusion on In-rich (2×4) reconstructed InGaAs surfaces on GaAs(001)
70. Optical properties of silicon nanocrystallites in SiO2 matrix: Crystalline vs. amorphous case
71. Silicon nanocrystallites in aSiO2matrix: Role of disorder and size
72. Indium surface diffusion on InAs(2×4)reconstructed wetting layers on GaAs(001)
73. Adsorption of indium on an InAs wetting layer deposited on the GaAs(001) surface
74. Pseudopotential calculations of band gaps and band edges of short-period(InAs)n∕(GaSb)msuperlattices with different substrates, layer orientations, and interfacial bonds
75. First-Principles Study of Silicon Nanocrystals: Structural and Electronic Properties, Absorption, Emission, and Doping
76. Electronic structure of self-assembledInAs∕InPquantum dots: Comparison with self-assembledInAs∕GaAsquantum dots
77. DIAMOND-LIKE ORDER IN ZINCBLENDE COMPOUNDS
78. Engineering silicon nanocrystals: Theoretical study of the effect of codoping with boron and phosphorus
79. Excitons in silicon nanocrystallites: The nature of luminescence
80. Codoping goes Nano: Structural and Optical Properties of Boron and Phosphorus Codoped Silicon Nanocrystals
81. Electronic structure and density of states of the random Al0.5Ga0.5As, Ga0.5As0.5P, and Ga0.5In0.5As semiconductor alloys
82. Thermodynamic instability of ordered (001) GaAlAs in bulk form
83. Understanding Doping In Silicon Nanostructures
84. Study of arsenic for antimony exchange at the Sb-stabilized GaSb(001) surface
85. Electronic band structure of the (GaAs)1/(InAs)1 (111) superlattice
86. Ground state structures and the random state energy of the Madelung lattice
87. First-principles study ofn- andp-doped silicon nanoclusters
88. Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states
89. Formation energies of silicon nanocrystals: role of dimension and passivation
90. First-principles study of Sb-stabilized GaSb(001) surface reconstructions
91. Evolution Of The Band Gaps And Band Edges Of Quaternary Ga1−yInyAsxSb1−x/InAs Alloys As A Function of Composition
92. Ab initiostructural and electronic properties of hydrogenated silicon nanoclusters in the ground and excited state
93. Surface and confinement effects on the optical and structural properties of silicon nanocrystals
94. Predicting interband transition energies for InAs/GaSb superlattices using the empirical pseudopotential method
95. Theory of optical properties of 6.1 Å III–V superlattices: The role of the interfaces
96. Si nanostructures embedded in SiO 2 : electronic and optical properties
97. Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices
98. Surface and confinement effects on the optical and structural properties of silicon nanocrystals.
99. Effects of interfacial atomic segregation on optical properties of InAs/GaSb superlattices
100. In-plane anisotropy of the optical properties of(In0.5Ga0.5As)n/(InP)nsuperlattices
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