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A comprehensive study of the behavior of the Mott insulator ${\mathrm{Ca}}_{2}{\mathrm{RuO}}_{4}$ under electrical current drive is performed by combining two experimental probes: the macroscopic electrical transport and the microscopic x-ray diffraction. The resistivity, $\ensuremath{\rho}$, versus electric current density, $J$, and temperature, $T,\ensuremath{\rho}(J,T)$, resistivity map is drawn. In particular, the metastable state, induced between the insulating and the metallic thermodynamic states by current biasing ${\mathrm{Ca}}_{2}{\mathrm{RuO}}_{4}$ single crystals, is investigated. Such an analysis, combined with the study of the resulting ${\mathrm{RuO}}_{6}$ octahedra energy levels, reveals that a metallic crystal phase emerges in the metastable regime. The peculiar properties of such a phase, coexisting with the well-established orthorhombic insulating and tetragonal metallic phases, allow one to explain some of the unconventional and puzzling behaviors observed in the experiments as a negative differential resistivity.

Background Success of India’s TB control program relies on rapid case detection, monitoring, care and treatment of drug resistance. Patients on multidrug resistance (MDR) treatment are monitored by follow up cultures. Discordant results (culture and smear positive while capilia negative) are usually declared negative Mycobacterium tuberculosis complex (MTBC). This study was designed to understand the possible causes of discordant results. Methods The capilia kit was evaluated to test its utility among 4737 follow up MDR patients enrolled during a period of 1 year. A total of 889 were liquid culture positive, 3375 were negative and 473 were contaminated. Of the 889 cultures positive, 829 were found positive by ZN smear, capilia test and MTBDR plus assay. The cultures which gave a positive result on Mycobacterium Growth Indicator Tube 960 (MGIT 960) and ZN smear but were negative on capilia test with no growth on Brain Heart Infusion agar (BHI) were included in this study. The conflicting results of capilia were compared with other molecular techniques; MTBDR plus assay and DNA sequence analysis of MPT64 gene. Results Out of 889 culture positive, 60 (6.7%) were found positive on liquid culture and ZN smear but were negative on capilia. Of these 60 cultures, 10 (16.7%) were found positive by both MTBDR plus assay and PCR. The sequencing analysis revealed that all of the capilia negative isolates had mutations within the MPT64 gene. Conclusion Re-evaluation of culture positive but capilia negative isolates should be done before declaring them as Mycobacterium other than tuberculosis (MOTT) because such cases can act as chronic carriers of TB in the population which can lead to the rise of this lethal disease.

Out of equilibrium phenomena are a major issue of modern physics. In particular, correlated materials such as Mott insulators experience fascinating long-lived exotic states under a strong electric field. Yet, the origin of their destabilization by the electric field is not elucidated. Here we present a comprehensive study of the electrical response of canonical Mott insulators GaM4Q8 (M=V, Nb, Ta, Mo; Q=S, Se) in the context of a microscopic theory of electrical breakdown where in-gap states allow for a description in terms of a two-temperature model. Our results show how the nonlinearities and the resistive transition originate from a massive creation of hot electrons under an electric field. These results give new insights for the control of the long-lived states reached under an electric field in these systems which has recently open the way to new functionalities used in neuromorphic applications. Fil: Diener, P.. Universite de Nantes; Francia Fil: Janod, E.. Universite de Nantes; Francia Fil: Corraze, B.. Universite de Nantes; Francia Fil: Querré, M.. Universite de Rennes I. Institut Des Sciences Chimiques de Rennes.; Francia. Universite de Nantes; Francia Fil: Adda, C.. Universite de Nantes; Francia Fil: Guilloux Viry, M.. Universite de Rennes I. Institut Des Sciences Chimiques de Rennes.; Francia Fil: Cordier, S.. Universite de Rennes I. Institut Des Sciences Chimiques de Rennes.; Francia Fil: Camjayi, Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Université Paris Sud; Francia Fil: Besland, M. P.. Universite de Nantes; Francia Fil: Cario, L.. Universite de Nantes; Francia

We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling $J$, focusing on the case with $J>0$. Using Jastrow-Slater wave functions, we consider both states with and without magnetic/orbital order. Electron pairing can also be included in the wave function, in order to detect the occurrence of superconductivity for generic electron densities $n$. When no magnetic/orbital order is considered, the Mott transition is continuous for $n=1$ (quarter filling); instead, at $n=2$ (half filling), it is first order for small values of $J/U$, while it turns out to be continuous when the ratio $J/U$ is increased. A significant triplet pairing is present in a broad region around $n=2$. By contrast, singlet superconductivity (with $d$-wave symmetry) is detected only for small values of the Hund coupling and very close to half filling. When including magnetic and orbital order, the Mott insulator acquires antiferromagnetic order for $n=2$; instead, for $n=1$ the insulator has ferromagnetic and antiferro-orbital orders. In the latter case, a metallic phase is present for small values of $U/t$ and the metal-insulator transition becomes first order. In the region with $1, Comment: 11 pages, 10 figures

Dissertation, RWTH Aachen University, 2017; Aachen, 1 Online-Ressource (ii, 184 Seiten) : Illustrationen, Diagramme (2017). = Dissertation, RWTH Aachen University, 2017, Metal-semiconductor junctions are playing a crucial role for almost all semiconductor technology based devices. Here, the main drawback is the formation of a Schottky-barrier at the silicon surface which reduces the transmission of carriers. Conventional measures for a Schottky-barrier reduction are approaching their economical and physical limits. While the most common approach is based on doping by minimizing the effect oft he Schottky-barrier the here in this thesis studied concept focuses on the root of the Schottky-barrier. The incorporation of an ultra thin silicon nitride layer with a thickness of a few atoms (0.8nm) resolves the Fermi-level pinning at the silicon surface. These thermally grown silicon nitride layers offer an excellent and passivated tunneling barrier to suppress the metal induced silicon gap states . Both qualities lead to a decoupling of the Fermi-level and the huge interface state density so that the metal free carrier concentration dominates almost the silicon surface.Ultra thin silicon nitride layers with thicknesses between 0.6nm up to 3.7nm were thermally grown in an ammona atmosphere. These layers are characterized by their excellent thickness conformity on wafer scale, huge etching resistance and high density. The main pillars of this work are dopant-free: metal-oxide-silicon-field effect transistors (MOSFET), diodes, metal-insulator-silicon-solar celss and resonant tunneling diodes realized by ultra thin silicon nitride layers. The ambipolar characteristics of Schottky-barrier MOSFETs is suppressed by the incorporation of an ultra thin silicon nitride layer. Hence, for the first time unipolar N-type and P-type MOSFETs without contact doping are successfully fabricated. Furthermore, the combination of low and high work function metals with silicon nitride enable Schottky-Mott diodes which exhibit forward voltages of approximately 1V, reverse capacitance below 5pF and a temperature coefficient close to 2mV/K proving the existence of a Schottky-Mott diodes at the silicon-silicon nitride-metal. Increasing the insulator thickness reduces the forward voltage. Highly doped substrates lead to an one-side Schottky-Mott junction which exhibits Schottky diode behavior owing to the small junction depth. In addition, it could be demonstrated for the first time that holes can propagate on a long distance in a low doped substrate despite the fact of the carrier freeze-out state.Micro- and nanostencil masks are the keys to satisfy the claim of a highly pure fabrication procedure for Schottky-Mott diodes and increasing the overall yield. For the first time, metal-insulator-silicon solar cells made of ultra thin silicon nitride layer were fabricated and take advantage of the ohmic tunneling junction which demonstrated a fill factor of 0.74. Thinking of energy selective contacts, first-time resonant tunneling diodes consisting of silicon nitride-silicon nanocrystals-silicon nitride sandwiches were realized by crystallization prior to the second nitridation.In summary, this thesis confirmed on various domains of application the cost-effective, dopant-free and successful ultra thin silicon nitride interface engineering., Published by Aachen

ULTRASPIN is an apparatus devoted to the measurement of the spin polarization (SP) of electrons ejected from solid surfaces in a UHV environment. It is designed to exploit ultrafast light sources (free electron laser or laser high harmonic generation) and to perform (photo)electron spin analysis by an arrangement of Mott scattering polarimeters that measure the full SP vector. The system consists of two interconnected UHV vessels: one for surface science sample cleaning treatments, e-beam deposition of ultrathin films, and low energy electron diffraction / AES characterization. The sample environment in the polarimeter allows for cryogenic cooling and in-operando application of electric and magnetic fields. The photoelectrons are collected by an electrostatic accelerator and transport lens that form a periaxial beam that is subsequently directed by a Y-shaped electrostatic deflector to either one of the two orthogonal Mott polarimeters. The apparatus has been designed to operate in the extreme conditions of ultraintense single-X-ray pulses as originated by free electron lasers (up to 1 kHz), but it allows also for the single electron counting mode suitable when using statistical sources such as synchrotron radiation, cw-laser, or e-gun beams (up to 150 kcps)

Das Ziel der Arbeit ist es, die elektronische Struktur der Oberfläche der Übergangsmetalldichalkogenide 1T-TaSe2 und 1T-TiSe2 zu untersuchen. 1T-TaSe2 zeigt einen Metall-Isolator-Übergang der mit Mott-Physik in Verbindung gebracht wird und sich in der Volumenleitfähigkeit nicht nachweisen lässt. Zeit- und winkelaufgelöste Photoelektronenspektroskopie wurde genutzt, um die Dynamik der elektronischen Struktur an der Oberfläche von 1T-TaSe2 impulsaufgelöst nach Anregung mit einem Infrarot-Laserpuls zu untersuchen. Es konnten zwei zeitlich getrennte Abläufe beobachtet werden: Zum einen der quasi sofortige Verlust der elektronischen Ordnung im Bereich der Zeitauflösung von t < 40 fs und zum anderen die kohärente Unterdrückung der periodischen Gitterverzerrung auf der Zeitskala der Oszillationsfrequenz eines kohärenten Phonons. Die schnellen Reaktionszeiten zeigen, dass tatsächlich elektronische Wechselwirkung die Ursache dieses Metall-Isolator-Übergangs ist. Des Weiteren wurde die Tiefenabhängigkeit der Ladungsdichtewelle in 1T-TaSe2 bei tiefen Temperaturen anhand der Aufspaltung der Ta-4f-Rumpfniveaus von 1T-TaSe2 studiert. Die Analyse zeigt eine Vergrößerung der Aufspaltung von 40 meV an der Oberfläche und damit eine Stärkung der Ladungsdichtewelle. Die Größe der Aufspaltung korreliert mit der des thermischen Metall-Isolator-Übergangs, welcher folglich lediglich an der Oberfläche des Materials auftritt. Im zweiten Teil der Arbeit wird der gezielte Einfluss von Elektronendotierung auf die elektronische Bandstruktur an der Oberfläche des Ladungsdichtewelle-Materials 1T-TiSe2 mit winkelauflösender Photoelektronenspektroskopie analysiert. Im Detail wird der Einfluss der zusätzlichen Ladungsträger auf die Ladungsdichtewelle untersucht. Bei hohen Elektronendotierung konnte eine vollständige energetische Entkopplung der obersten Einheitszelle nachgewiesen werden. The goal of the present work is to investigate the electronic structure of the surfaces of the transition-metal dichalcogenides 1T-TaSe2 and 1T-TiSe2. In particular the modification of the electronic structure by enhanced interactions at the surface is studied. 1T-TaSe2 shows a pronounced metal-to-insulator transition, which may be related to Mott physics and is not observable in bulk sensitive transport measurements. The first part of this work investigates the origin and the spatial extend of this transition. Time- and angle-resolved extreme ultraviolet photoelectron spectroscopy is used to determine the momentum-dependent electronic structure dynamics in the layered material 1T-TaSe2. Extracted spectroscopic order parameters display a global two-time-scale dynamics indicating a quasi-instantaneous loss of the electronic orders and a subsequent coherent suppression of the lattice distortion on a time scale related to the frequency of the charge-density-wave amplitude mode. The fast reaction of the system reveals electronic interplay as the driving force to this phase transition. Moreover, the depth dependency of the charge-density wave in 1T-TaSe2 at low temperatures is studied by hard X-ray photoelectron spectroscopy. The additional charge- density-wave-induced splitting of the Ta-4f-core levels, which serves as an excellent order parameter for the strength of the charge-density wave, is investigated. The findings corroborate the idea of a surface confined metal-to-insulator transition triggered by an enhancement of the charge-density wave at the surface. The second part of the present work focuses on the modification of the electronic structure at the surface of 1T-TiSe2 enforced by electron doping. Angle-resolved photo- electron spectroscopy is used to investigate the influence on the charge-density wave in this material in detail. At high doping levels the charge-density wave vanishes and the complete electronically decoupling of the uppermost layer is observed.

The phase diagram of a half-filled hard core boson two-leg ladder in a flux is investigated by means of numerical simulations based on the Density Matrix Renormalization Group (DMRG) algorithm and bosonization. We calculate experimentally accessible observables such as the momentum distribution, as well as rung current, density wave and bond-order wave correlation functions, allowing us to identify the Mott Meissner and Mott Vortex states. We follow the transition from commensurate Meissner to incommensurate Vortex state at increasing interchain hopping till the critical value [Piraud et al. Phys. Rev. B v. 91, p. 140406 (2015)] above which the Meissner state is stable at any flux. For flux close to $\pi$, and below the critical hopping, we observe the formation of a second incommensuration in the Mott Vortex state that could be detectable in current experiments., Comment: RevTeX 4, 5 pages + 8 pages supplemental, 6 EPS figures; (v2) references added, corrected the discussion of the Meissner state at high interchain hopping

In this thesis we investigated magnetic excitations in the iridate compound Sr2IrO4. As a layered strongly correlated system it can be described by the two-dimensional one-band Hubbard model, describing interacting particles in effective spin-1/2 states. Based on the previously calculated band structure model, it becomes an effective model with one free parameter, the one-site interaction strength U. Using Green's functions at the mean field level, we calculated the dynamic magnetic susceptibility and thereby the spin wave dispersion. We compared the spin wave dispersion with resonant inelastic X-ray scattering experiments and used it to fit the Hubbard interaction strength U. We found the t-t'-t''-U-Hubbard model based on the band structure energies to provide a good description of the spin wave dispersion for U=1.1eV.

Important paradigms of pulmonary disease with nontuberculous mycobacteria (NTM) are currently shifting based on an increasing attention within the field of cystic fibrosis (CF). These shifts are likely to benefit the management of all patients with pulmonary NTM, regardless of underlying pathology. Currently several key areas are being revised: The first outbreak of human NTM transmission has been proven and new evidence of biofilm growth in vivo has been demonstrated. A better understanding of the clinical impact of NTM infection has led to increased diagnostic vigilance and new recommendations for lung transplantation are under way. While recent changes have reinvigorated the interest in NTM disease, the challenge remains, whether such advances can be successfully translated into improved management and care.

Revealing the nature of charge excitations in strongly correlated electron systems is crucial to understanding their exotic properties. Here we use broadband ultrafast pump-probe spectroscopy in the visible range to study low-energy transitions across the Mott-Hubbard gap in the orbitally ordered insulator YVO 3 . Separating thermal and nonthermal contributions to the optical transients, we show that the total spectral weight of the two lowest peaks is conserved, demonstrating that both excitations correspond to the same multiplet. The pump-induced transfer of spectral weight between the two peaks reveals that the low-energy one is a Hubbard exciton, i.e., a resonance or a nearly bound state between a doublon and a holon. Finally, we speculate that the pump-driven spin disorder can be used to quantify the kinetic energy gain of the excitons in a ferromagnetic environment.

Objective To determine the prevalence of non tuberculosis mycobacteria (NTM) among new and previously treated tuberculosis (TB) patients in Nigeria. Methods It was a retrospective study. A total of 102 sputum smear positive samples/culture isolates from pulmonary TB patients (41 new smear positive and 61 smear positive retreatment cases) were sent to the Institute of Tropical Medicine, Antwerp Belgium between 2007-2009. Data on patients' characteristics were retrieved from their treatment cards. Results Among the 102 samples, 25 isolates results (20 were culture negative while 5 were contaminated) were excluded from the study. Data were available for 77 mycobacterium isolates. 70 (90.9%) were identified as Mycobacterium tuberculosis and 7 (9.1%) as atypical mycobacteria. Among the atypical mycobacteria, three of them were Mycobacterium fortuitum, two Mycobacterium intracellulare and two Mycobacterium chelonae. Of the seven isolates with atypical mycobacteria, 4 (57.1%) were from previously treated patients, while 3 (42.9%) were new sputum positive patients. There was no statistically significant difference in NTM infection between new and previously treated pulmonary TB patients (P =0.97). Conclusions The study shows the involvement of atypical mycobacterium in pulmonary infection in both new and previously treated TB patients. Therefore, there is a need to carry out culture and drug susceptibility testing in all pulmonary TB patients especially those who had failed conventional DOTS treatment to rule out NTM infections.

Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency towards charge ordering, an effect that confines the electrons, and in turn favors local moment formation, i.e. Mott localization. A distinct intermediate regime then emerges as a precursor of such a Wigner-Mott transition, which is characterized by both charge and spin correlations, displaying large mass enhancements and strong renormalizations of other Fermi liquid parameters. Here we present a careful study of a quarter filled extended Hubbard model - a simple example where such physics can be studied in detail, and discuss its relevance for the understanding of the phenomenology of low-density two dimensional electron gases., 11 pages, 9 figures

Un experimento fue conducido para estudiar los efectos de enzimas de celulosa y bacterias de ácido láctico sobre las características de fermentación, composición química, valor nutritivo y rendimiento animal de ensilaje de pasto elefante enano cv. Mott. Se realizaron cinco preparativos: melaza (control), melaza y enzimas de celulosa, enzimas de celulosas, concentrado de bacterias de ácido láctico y melaza y concentrado de bacterias de ácido láctico. Se encontraron diferencias significativas (P

The scanning tunnelling microscope (STM) enables both spatial and spectroscopic investigations of surfaces at the atomic scale. Light emission by the tunnel junction was demonstrated not long after the STM invention and contains valuable information on the electronic and optical properties of surfaces and nano-objects. The theme of this thesis is the induced light emission in STM experiments on wide band gap semiconductors. The results were obtained on the SiC(0001)3x3 silicon carbide (SiC) surface and are divided into three parts. The first part considers the light emission from the metal/vacuum/SiC(0001)3x3 junction of the STM. This study, associated with tunnelling spectroscopy measurements, provided a deep insight into the mechanisms and properties of electronic transport along the SiC surface states. The second part deals with the adsorption of individual organic molecules on SiC(0001)3x3. Organic functionalization is a necessary step not only for the study of single molecule fluorescence with the STM but also for the conception of organic/inorganic hybrid materials. The submolecular STM resolution and DFT calculations carried out in collaboration enabled a detailed understanding of the adsorption configuration of phthalocyanine molecules and give some general characteristics of molecules susceptible to anchor on this surface. The third part is devoted to numerical simulations, based on the Green tensor technique, of the light emission from the tunnel junction. This model showed the influence of the STM tip geometry on the far-field emitted light and also the fluorescence enhancement and quenching of single molecules excited by STM.; Le microscope à effet tunnel (STM) permet une analyse spatiale et spectroscopique de surfaces à l'échelle atomique. Mise en évidence peu après l'invention du STM, la lumière émise par la jonction tunnel contient des informations pertinentes sur les propriétés électroniques et optiques de surfaces ou de nano-objets.La thématique dans laquelle s'inscrit cette thèse est la luminescence induite par STM sur substrat semiconducteur à large bande interdite. Les travaux ont porté sur la reconstruction de surface SiC(0001)3x3 du carbure de silicium (SiC) et s'articulent autour de trois parties.La première partie est consacrée à l'étude de la luminescence de la jonction tunnel métal/vide/SiC(0001)3x3. Cette étude, en parallèle à des mesures de spectroscopie tunnel, a mis en évidence les mécanismes et propriétés de transport électronique le long des états de surface du SiC.Une deuxième partie est dédiée à l'adsorption de molécules organiques sur la surface SiC(0001)3x3. La fonctionnalisation organique du SiC est une étape indispensable pour l'étude de molécules individuelles mais aussi pour la conception de matériaux hybrides organique/inorganique. La résolution submoléculaire du STM associée à des calculs ab initio en collaboration ont dégagé un modèle de chimisorption détaillé de la phthalocyanine hydrogénée.La dernière partie décrit des simulations numériques, basées sur le formalisme des tenseurs de Green, de la lumière émise par la jonction tunnel. Ces travaux ont permis de modéliser d'une part l'influence de la forme de la pointe du STM sur le spectre de la lumière émise, d'autre part l'inhibition de la fluorescence de molécules individuelles excitées par STM.

The scanning tunnelling microscope (STM) enables both spatial and spectroscopic investigations of surfaces at the atomic scale. Light emission by the tunnel junction was demonstrated not long after the STM invention and contains valuable information on the electronic and optical properties of surfaces and nano-objects. The theme of this thesis is the induced light emission in STM experiments on wide band gap semiconductors. The results were obtained on the SiC(0001)3x3 silicon carbide (SiC) surface and are divided into three parts. The first part considers the light emission from the metal/vacuum/SiC(0001)3x3 junction of the STM. This study, associated with tunnelling spectroscopy measurements, provided a deep insight into the mechanisms and properties of electronic transport along the SiC surface states. The second part deals with the adsorption of individual organic molecules on SiC(0001)3x3. Organic functionalization is a necessary step not only for the study of single molecule fluorescence with the STM but also for the conception of organic/inorganic hybrid materials. The submolecular STM resolution and DFT calculations carried out in collaboration enabled a detailed understanding of the adsorption configuration of phthalocyanine molecules and give some general characteristics of molecules susceptible to anchor on this surface. The third part is devoted to numerical simulations, based on the Green tensor technique, of the light emission from the tunnel junction. This model showed the influence of the STM tip geometry on the far-field emitted light and also the fluorescence enhancement and quenching of single molecules excited by STM.; Le microscope à effet tunnel (STM) permet une analyse spatiale et spectroscopique de surfaces à l'échelle atomique. Mise en évidence peu après l'invention du STM, la lumière émise par la jonction tunnel contient des informations pertinentes sur les propriétés électroniques et optiques de surfaces ou de nano-objets.La thématique dans laquelle s'inscrit cette thèse est la luminescence induite par STM sur substrat semiconducteur à large bande interdite. Les travaux ont porté sur la reconstruction de surface SiC(0001)3x3 du carbure de silicium (SiC) et s'articulent autour de trois parties.La première partie est consacrée à l'étude de la luminescence de la jonction tunnel métal/vide/SiC(0001)3x3. Cette étude, en parallèle à des mesures de spectroscopie tunnel, a mis en évidence les mécanismes et propriétés de transport électronique le long des états de surface du SiC.Une deuxième partie est dédiée à l'adsorption de molécules organiques sur la surface SiC(0001)3x3. La fonctionnalisation organique du SiC est une étape indispensable pour l'étude de molécules individuelles mais aussi pour la conception de matériaux hybrides organique/inorganique. La résolution submoléculaire du STM associée à des calculs ab initio en collaboration ont dégagé un modèle de chimisorption détaillé de la phthalocyanine hydrogénée.La dernière partie décrit des simulations numériques, basées sur le formalisme des tenseurs de Green, de la lumière émise par la jonction tunnel. Ces travaux ont permis de modéliser d'une part l'influence de la forme de la pointe du STM sur le spectre de la lumière émise, d'autre part l'inhibition de la fluorescence de molécules individuelles excitées par STM.

WOS: 000328149500001 PubMed: 24261745 Aim: Mycobacteria other than tuberculosis (MOTT) cause increasingly serious infections especially in immunosuppressive patients by direct transmission from the environment or after colonization. However, identification of these species is difficult because of the cost and difficulties in defining to species level. Identification and distribution of these species can help clinician in the choice of treatment. Materials and methods: A total of 90 MOTT strains obtained from four different centers were included in the study. These strains were identified by sequence analysis of 16S rRNA and Hsp65 genetic regions. Results: Accordingly, within the 90 MOTT strains, 17 different species were identified. In order of frequency, these species were M. gordonea (n = 21), M. abscessus (n = 13), M. lentiflavum (n = 9), M. fortuitum (n = 8), M. intracellulare (n = 6), M. kumamotonense (n = 6), M. neoaurum (n = 5), M. chimaera (n = 5), M. alvei (n = 5), M. peregrinum (n = 3), M. canariasense (n = 3), M. flavescens (n = 1), M. mucogenicum (n = 1), M. chelona (n = 1), M. elephantis (n = 1), M. terrae (n = 1) and M. xenopi (n = 1). Most frequently identified MOTT species according to the geographical origin were as follows: M. abscessus was the most common species either in Istanbul or Malatya regions (n = 6, n = 6, consequently). While M. kumamotonense was the most frequent species isolated from Ankara region (n = 6), M. gordonea was the most common for Samsun region (n = 14). Conclusion: Our study revealed that frequency of MOTT varies depending on the number of clinical samples and that frequency of these species were affected by the newly identified species as a result of the use of novel molecular methods. In conclusion, when establishing diagnosis and treatment methods, it is important to know that infections caused by unidentified MOTT species may vary according to the regions in Turkey. The results of the study showed that there were differences in the frequency of MOTT species in the different geographical regions of Turkey.

We demonstrate that the concept of moir\'e flat bands can be generalized to achieve electronic band engineering in all three spatial dimensions. For many two dimensional van der Waals materials, twisting two adjacent layers with respect to each other leads to flat electronic bands in the two corresponding spatial directions -- a notion sometimes referred to as twistronics as it enables a wealth of physical phenomena. Within this two dimensional plane, large moir\'e patterns of nanometer size form. The basic concept we propose here is to stack multiple twisted layers on top of each other in a predefined pattern. If the pattern is chosen such that with respect to the stacking direction of layers, the large spatial moir\'e features are spatially shifted from one twisted layer to the next, the system exhibits twist angle controlled flat bands in all of the three spatial directions. With this, our proposal extends the use of twistronic to three dimensions. We exemplify the general concept by considering graphitic systems, boron nitride and WSe$_2$ as candidate materials, but the approach is applicable to any two-dimensional van der Waals material. For hexagonal boron nitride we develope an ab initio fitted tight binding model that captures the corresponding three dimensional low-energy electronic structure. We outline that interesting three dimensional correlated phases of matter can be induced and controlled following this route, including quantum magnets and unconventional superconducting states., Comment: 17 pages, 4 figures