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336 results on '"Lu, Shulong"'

61. Realize low-power artificial photonic synapse based on (Al,Ga)N nanowire/graphene heterojunction for neuromorphic computing.

Author

Zhou, Min, Zhao, Yukun, Gu, Xiushuo, Zhang, Qianyi, Zhang, Jianya, Jiang, Min, and Lu, Shulong

Subjects
NANOWIRES, ARTIFICIAL neural networks, SEMICONDUCTOR nanowires, ACTION potentials, SYNAPSES, HETEROJUNCTIONS
Abstract

The fast development of brain-inspired neuromorphic computing systems has stimulated urgent requirements for artificial synapses with low-power consumption. In this work, a photonic synaptic device based on (Al,Ga)N nanowire/graphene heterojunction has been proposed and demonstrated successfully. In the artificial synaptic device, the incident light, the nanowire/graphene heterojunction, and the light-generated carriers play the roles of action potential, pre-synaptic/post-synaptic membrane, and neurotransmitter in a biological synapse, respectively. As a key synaptic function, the paired pulse facilitation index of the photonic synapse can reach 202%, which can be modulated by the interval time between two adjacent light pulses. It is found that the graphene defects, the surface band bending, and the Al vacancies on the surface of (Al,Ga)N nanowires can be the key reasons contributing to the synaptic characteristics of artificial photonic devices. Hence, the dynamic "learning–forgetting" performance of the artificial synaptic device can resemble the "learning–forgetting" behavior of the human brain. Furthermore, the hand-written digits are set up to mimic a typical characteristic of human perceptual learning. After only three training epochs, the simulated network can achieve a high recognition rate of over 90% based on the experimental conductance for long-term potentiation and long-term depression. In supervised learning processes, such few training times are beneficial to reduce energy consumption significantly. Therefore, in the area of neuromorphic computing technology and artificial intelligence systems requiring low-power consumption, this work paves a potential way to develop the optoelectronic synapse based on semiconductor nanowires. [ABSTRACT FROM AUTHOR]

Published
2023
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63. Flexible Self‐Powered Photoelectrochemical Photodetector with Ultrahigh Detectivity, Ultraviolet/Visible Reject Ratio, Stability, and a Quasi‐Invisible Functionality Based on Lift‐Off Vertical (Al,Ga)N Nanowires (Adv. Mater. Interfaces 16/2022)

Author

Jiang, Min, primary, Zhang, Jianya, additional, Yang, Wenxian, additional, Wu, Dongmin, additional, Zhao, Yukun, additional, Wu, Yuanyuan, additional, Zhou, Min, additional, and Lu, Shulong, additional

Published
2022
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66. Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy

Author

Zhang, Xue, primary, Xing, Zhiwei, additional, Yang, Wenxian, additional, Qiu, Haibing, additional, Gu, Ying, additional, Suzuki, Yuta, additional, Kaneko, Sakuya, additional, Matsuda, Yuki, additional, Izumi, Shinji, additional, Nakamura, Yuichi, additional, Cai, Yong, additional, Bian, Lifeng, additional, Lu, Shulong, additional, and Tackeuchi, Atsushi, additional

Published
2022
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70. 倒置GaInP/GaAs/InGaAs三结太阳电池失效分析

Author

Zhang Yi, 张怡, primary, Long Junhua, 龙军华, additional, Sun Qiangjian, 孙强健, additional, Xuan Jingjing, 宣静静, additional, Li Xuefei, 李雪飞, additional, Wang Xia, 王霞, additional, Chen Zhitao, 陈志韬, additional, Wu Xiaoxu, 吴晓旭, additional, and Lu Shulong, 陆书龙, additional

Published
2022
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74. SiO 2 Passivated Graphene Saturable Absorber Mirrors for Ultrashort Pulse Generation.

Author

Wang, Hongpei, Jiang, Cheng, Chu, Huiyuan, Dai, Hao, Fu, Beibei, Lu, Shulong, and Zhang, Ziyang

Subjects
MODE-locked lasers, ULTRA-short pulsed lasers, GRAPHENE, FIBER lasers, MIRRORS, ULTRASHORT laser pulses
Abstract

Owing to its broadband absorption, ultrafast recovery time, and excellent saturable absorption feature, graphene has been recognized as one of the best candidates as a high-performance saturable absorber (SA). However, the low absorption efficiency and reduced modulation depth severely limit the application of graphene-based SA in ultrafast fiber lasers. In this paper, a single-layer graphene saturable absorber mirror (SG-SAM) was coated by a quarter-wave SiO2 passivated layer, and a significantly enhanced modulation depth and reduced saturation intensity were obtained simultaneously compared to the SG-SAM without the SiO2 coating layer. In addition, long-term operational stability was found in the device due to the excellent isolation and protection of the graphene absorption layer from the external environment by the SiO2 layer. The high performance of the SAM was further confirmed by the construction of a ring-cavity EDF laser generating mode-locked pulses with a central wavelength of 1563.7 nm, a repetition rate of 34.17 MHz, and a pulse width of 830 fs. [ABSTRACT FROM AUTHOR]

Published
2023
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75. Effect of Growth Temperature on Crystallization of Ge 1−x Sn x Films by Magnetron Sputtering.

Author

Huang, Hongjuan, Zhao, Desheng, Qi, Chengjian, Huang, Jingfa, Zeng, Zhongming, Zhang, Baoshun, and Lu, Shulong

Subjects
MAGNETRON sputtering, BUFFER layers, TEMPERATURE effect, TRANSMISSION electron microscopes, CRYSTALLIZATION
Abstract

Ge1−xSnx film with Sn content (at%) as high as 13% was grown on Si (100) substrate with Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and Raman spectrum, the quality of the Ge1−xSnx crystal was strongly dependent on the growth temperature. Among them, the GeSn (400) diffraction peak of the Ge1−xSnx film grown at 240 °C was the lowest, which is consistent with the Raman result. According to the transmission electron microscope image, some dislocations appeared at the interface between the Ge buffer layer and the Si substrate due to the large lattice mismatch, but a highly ordered atomic arrangement was observed at the interface between the Ge buffer layer and the Ge1−xSnx layer. The Ge1−xSnx film prepared by magnetron sputtering is expected to be a cost-effective fabrication method for Si-based infrared devices. [ABSTRACT FROM AUTHOR]

Published
2022
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76. Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Author

Zhang, Xue, primary, Yang, Wenxian, additional, Xing, Zhiwei, additional, Qiu, Haibing, additional, Gu, Ying, additional, Bian, Lifeng, additional, Lu, Shulong, additional, Qin, Hua, additional, Cai, Yong, additional, Suzuki, Yuta, additional, Kaneko, Sakuya, additional, Matsuda, Yuki, additional, Izumi, Shinji, additional, Nakamura, Yuichi, additional, and Tackeuchi, Atsushi, additional

Published
2021
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85. The Property of ITO Produced by Optical Thin Film Coating for Solar Cell

Author

Lu Shulong, Dai Pan, Long Junhua, and Chen Feixue

Subjects
Materials science, Silicon, business.industry, Band gap, chemistry.chemical_element, Substrate (electronics), law.invention, Indium tin oxide, chemistry, law, Solar cell, Tauc plot, Transmittance, Optoelectronics, business, Refractive index
Abstract

We studied the crystal quality and optical properties of ITO produced with optical thin film coatings to replace conventional metal electrodes as electrodes for III-V solar cells. ITO films were grown on glass, GaAs and silicon substrate. ITO is a polycrystalline with predominant (222) crystalline plane. A smooth surface with protruding nano-crystallite was observed. The light transmittance of ITO has a strong relationship with thickness and annealing temperature. The transmittance was obviously enhanced after being annealed at 500 °C. With the thickness increase, the transmittance decreases in total. The band gap of the ITO film was estimated 3.8 eV by extrapolating the linear part of the Tauc plot curves to intercept the energy axis. The refractive index n of ITO film is was measured. The reflectivity is greatly influenced by the thickness of ITO.

Published
2020
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87. 倒置GaInP/GaAs/InGaAs三结太阳电池失效分析

Author

张怡 Zhang Yi, 龙军华 Long Junhua, 孙强健 Sun Qiangjian, 宣静静 Xuan Jingjing, 李雪飞 Li Xuefei, 王霞 Wang Xia, 陈志韬 Chen Zhitao, 吴晓旭 Wu Xiaoxu, and 陆书龙 Lu Shulong

Subjects
Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Published
2022
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