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Experiments reported that alkaline earth metal dopants greatly prolong carrier lifetime and improve the performance of perovskite solar cells. Using state-of-the-art ab initio time-domain nonadiabatic molecular dynamics (NAMD), we demonstrate that incorporation of alkaline earth metals, such as Sr and Ba, into MAPbI3 (MA = CH3NH3+) lattice at the lead site is energetically favorable due to the largely negative formation energies about −7 eV. The replacement widens the bandgap and increases the open-circuit voltage by creating no trap states. More importantly, the substitution reduces the mixing of electron and hole wave functions by pushing the hole charge density away from the dopant together with no contribution of Sr and Ba to the conduction band edge state, thus decreasing the NA coupling. The high frequency phonons generated by enhanced atomic motions and symmetry breaking accelerate phonon-induced loss of coherence. The synergy of the three factors reduces the nonradiative recombination time by a factor of about 2 in the Sr- and Ba-doped systems with respect to pristine MAPbI3, which occurs over 1 ns and agrees well with the experiment. The study highlights the importance of various factors affecting charge carrier lifetime, establishes the mechanism of reduction of nonradiative electron–hole recombination in perovskites upon alkaline earth metal doping, and provides meaningful insights into the design of high performance of perovskite solar cells and optoelectronics. [ABSTRACT FROM AUTHOR]

Two-dimensional transition metal dichalcogenides (TMDs) are receiving significant attention due to their excellent electronic and optoelectronic properties. The material quality is greatly affected by defects that are inevitably generated during material synthesis. Focusing on chalcogenide vacancies, which constitute the most common defect, we use the state-of-the-art simulation methodology developed in our group to demonstrate that W doping of MoSe2 with Se vacancies reduces charge carrier losses by two mechanisms. First, W doping makes the formation of double Se vacancies unfavorable, while it is favorable in undoped MoSe2. Second, if a Se vacancy is present, the charge carrier lifetimes are extended in the W-doped MoSe2. Combining ab initio real-time time-dependent density functional theory with nonadiabatic molecular dynamics, the simulations show that the nonradiative carrier losses in the presence of Se vacancies proceed by sub-10 ps electron trapping and relaxation down the manifold of trap states, followed by a 100 ps recombination of trapped electrons with free holes. The electron–vibrational energy exchange is driven by both in-plane and out-of-plane vibrational motions of the MoSe2 layer. The atomistic studies advance our understanding of the influence of defects on charge carrier properties in TMDs and guide improvements of material quality and development of TMD applications. [ABSTRACT FROM AUTHOR]

Mixed anatase/rutile TiO2 exhibits high photocatalytic activity; however, the mechanism underlying the high performance of the mixed phases is not fully understood. We have performed time-domain ab initio calculations to study the exited state dynamics in mixed phase TiO2 and to investigate the impact of an oxygen vacancy on the dynamics. The anatase(100)/rutile(001) heterostructures with and without an oxygen vacancy used in this work exhibit type II band alignment with the conduction band of rutile residing above that of anatase. The oxygen vacancy introduces a hole trap state inside the bandgap. Owing to a strong coupling between the donor and acceptor states, the electron and hole transfers across the anatase/rutile interface occur on an ultrafast 100 fs timescale in both systems. The decoupling of electron and hole favors a long-lived charge separated state. The electron–hole recombination across the pristine anatase/rutile interface takes 6.6 ns and is significantly slower than that in the pure anatase and rutile phases, showing good agreement with experiments. The electron transfer dynamics is independent of the oxygen vacancy, which has some influence on the hole transfer and a strong effect on carrier recombination. By creating a hole trap state, the vacancy accelerates carrier losses by over an order of magnitude. The fast charge separation and the long lifetime of the charge separated state rationalize the enhanced photocatalytic performance of mixed phase TiO2 compared to the pure phases. [ABSTRACT FROM AUTHOR]

Metal halide perovskites constitute a new type of semiconducting materials with long charge carrier lifetimes and efficient light-harvesting. The performance of perovskite solar cells and related devices is limited by nonradiative charge and energy losses, facilitated by defects. Combining nonadiabatic molecular dynamics and time-domain density functional theory, we demonstrate that charge losses depend strongly on the defect chemical state. By considering an extra Pb atom in CH3NH3PbI3, which is a common defect in lead halide perovskites, we investigate its influence on charge trapping and recombination. In a chemically inert form as a Pb interstitial, the extra Pb atom has only a mild influence on charge recombination. However, if the extra Pb atom binds to a native Pb atom to form a dimer, the charge trapping and recombination are greatly accelerated because the Pb-dimer creates a localized midgap trap state that couples strongly to the perovskite valence band edge. Holes disappear from the valence band two orders of magnitude faster than in the pristine perovskite and recombine with conduction band electrons one order of magnitude faster. The simulations identify the phonon modes involved in the nonradiative charge trapping and recombination and highlight the importance of rapid decoherence within the electronic subsystem for long carrier lifetimes. The detailed atomistic analysis of the charge trapping and recombination mechanisms enriches the understanding of defect properties and provides theoretical guidance for improving perovskite performance. [ABSTRACT FROM AUTHOR]

Epitaxial heterostructures of colloidal lead halide perovskite nanocrystals (NCs) with other semiconductors, especially the technologically important metal chalcogenides, can offer an unprecedented level of control in wavefunction design and exciton/charge carrier engineering. These NC heterostructures are ideal material platforms for efficient optoelectronics and other applications. Existing methods, however, can only yield heterostructures with random connections and distributions of the two components. The lack of epitaxial relation and uniform geometry hinders the structure–function correlation and impedes the electronic coupling at the heterointerface. This work reports the synthesis of uniform, epitaxially grown CsPbBr3/CdS Janus NC heterostructures with ultrafast charge separation across the electronically coupled interface. Each Janus NC contains a CdS domain that grows exclusively on a single {220} facet of CsPbBr3 NCs. Varying reaction parameters allows for precise control in the sizes of each domain and readily modulates the optical properties of Janus NCs. Transient absorption measurements and modeling results reveal a type II band alignment, where photoexcited electrons rapidly transfer (within ≈9 picoseconds) from CsPbBr3 to CdS. The promoted charge separation and extraction in epitaxial Janus NCs leads to photoconductors with drastically improved (approximately three orders of magnitude) responsivity and detectivity, which is promising for ultrasensitive photodetection. [ABSTRACT FROM AUTHOR]