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The fabrication of functional microstructures on surfaces by laser enables unique material properties and is presently a leading research topic. This work addresses the production of functional hierarchical microstructures on carbon fibre reinforced polymer composites in order to control the wettability properties of the material. Two-beam Direct Laser Interference Patterning using either ultraviolet (263 nm) or infrared (1053 nm) nanosecond laser source is employed to produce melt-free and well-defined hierarchical microstructures on carbon fibre reinforced plastics. The resulting water contact angles after thin film deposition of 1H,1H,2H,2H-Perflorodecyl-triethoxysilane were analysed with respect to structure depth and quality. The maximum static contact angle of 171° is demonstrated for dual hierarchical microstructures composed of 11 µm deep large-scale pillars, covered by 1.7 µm pillars, both fabricated in a single step.

International audience; The addition of CO2 into the process gas has a significant impact on the quality and the incorporation of boron in CVD diamond layers. In this report we study the effect of CO2 addition in the gas phase on the properties of boron doped nano‐crystalline diamond (BNCD) layers grown at low substrate temperatures (450–500 °C) using a microwave linear antenna plasma‐enhanced chemical vapour deposition apparatus (MW‐LA‐PECVD). Experimental results show an increase in the layers' conductivity with a reduction in CO2 concentration, which is consistent with the variation in the atomic boron emission line intensity measured by optical emission spectroscopy (OES). At CO2 concentrations close to zero, we observed the formation of a smooth, transparent and highly resistive layer on unseeded substrates. This layer has been identified as silicon carbide (SiC) by transmission electron microscopy and X‐ray photoelectron microscopy. The presence of silicon in the plasma is confirmed by OES and it is attributed to quartz tube etching. In this specific deposition condition, diamond growth is in competition with SiC growth

Here we report on a mathematical description for the neutron dark field image (DFI) contrast based on the influence of the thickness dependent beam broadening caused by scattering interactions and multiple refraction in the sample. We conduct radiography experiments to verify that the DFI signal exponentially decays as a function of thickness for both magnetic and nonmagnetic materials. Here we introduce a material dependent parameter the so called linear diffusion coefficient O. This allows us to perform a quantitative DFI computed tomography. Additionally we conduct correlative small angle neutron scattering experiments and validate the mathematical assumption that the angular broadening of the direct beam is proportional to the square root of the number of discrete layers.

Due to its high sensitivity to corrosion, the use of Si in direct photoelectrochemical (PEC) water-splitting systems that convert solar energy into chemical fuels has been greatly limited. Therefore, the development of low-cost materials resistant to corrosion under oxidizing conditions is an important goal toward a suitable protection of otherwise unstable semiconductors used in PEC cells. Here, we report on the development of a protective coating based on thin and electrically conductive nanocrystalline boron-doped diamond (BDD) layers. We found that BDD layers protect the underlying Si photoelectrodes over a wide pH range (1-14) in aqueous electrolyte solutions. A BDD layer maintains an efficient charge carrier transfer from the underlying silicon to the electrolyte solution. SiIBDD photo electrodes show no sign of performance degradation after a continuous PEC treatment in neutral, acidic, and basic electrolytes. The deposition of a cobalt phosphate (CoPi) oxygen evolution catalyst onto the BDD layer significantly reduces the overpotential for water oxidation, demonstrating the ability of BDD layers to substitute the transparent conductive oxide coatings, such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO), frequently used as protective layers in Si photoelectrodes.