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Many THz applications require detection of sub-picosecond THz pulses. Electronic detectors, in particular, can address this challenge. We report on the detection of sub-picosecond THz pulses generated by a large-area interdigitated photoconductive antenna using a AlGaN/GaN high electron mobility transistor with integrated bow-tie antenna. We demonstrate that the detector’s photoresponse is linear in a wide range of gate bias voltages regarding the available THz radiation power with peak power levels of a few hundreds of milliwatts. We apply an autocorrelation technique to investigate the spectral response of our detector within a bandwidth exceeding 1 THz. We observe an unexpected frequency roll-off of responsivity, which can not be predicted using a framework of standard distributed transmission line theory. However, we show that the data can be understood if one accounts for only partial plasmon screening by the gate electrode, so that the results adhere simply to the distributed resistive mixing approximation, whereby the device suffers from the observed roll-off. This indicates, that for novel detectors and radiation sources, which intend to utilize plasma waves, it is important to ensure efficient screening by the gate electrode. [ABSTRACT FROM AUTHOR]

Optical pump-terahertz (THz) probe spectroscopy was used for investigation of electron dynamics in In0.53Ga0.47As films irradiated by heavy ions (Br+) at doses from 109 to 1012 cm[?]2. From the transient conductivity spectra, photoexcited electron lifetimes and mobilities were determined; their decrease is observed upon increase in the irradiation dose. At the highest dose, the material combines an electron lifetime of 0.46 ps with an exceptionally high photoexcited electron mobility of 3600 cm2 V[?]1 s[?]1. This last value is even higher than those reported for low-temperature-grown GaAs with similar electron lifetime. Due to its rather low band gap, heavy-ion irradiated In0.53Ga0.47As shows promising properties for the development of THz systems using telecommunication based technology. [ABSTRACT FROM AUTHOR]

2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe 2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe 2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe 2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe 2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe 2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe 2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters., (© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.)

Spintronic terahertz emitters (STEs), based on optical excitation of nanometer thick ferromagnetic/heavy metal (FM/HM) heterojunctions, have become important sources for the generation of terahertz (THz) pulses. However, the efficiency of the optical-to-THz conversion remains limited. Although optical techniques have been developed to enhance the optical absorption, no investigations have studied the application of THz cavities. Here, to enhance the THz efficiency of STEs in a selected THz spectral range, FM/HM structures are realized on ultra-thin sapphire layers with metallic mirrors to create λ /4 THz resonant cavities. THz emission time domain spectroscopy of these STE/sapphire/mirror heterostructures, with sapphire thicknesses ranging from 110 µm to 25 µm, shows enhancement of the emitted THz field that fits the λ /4 cavity resonance with up to a doubling of the field in the spectrum, and in agreement with temporal simulations of the emitted THz pulse. By taking advantage of birefringent materials, we further show the potential of control of the polarization state of the emitted THz pulse. This work shows the potential of enhancing and engineering THz emission from STEs using THz cavities that can be controlled over a broad spectral range, which can be easily combined with optical cavities., Competing Interests: Conflict of interest: Authors state no conflict of interest., (© 2024 the author(s), published by De Gruyter, Berlin/Boston.)

The investigation of strong coupling between light and matter is an important field of research. Its significance arises not only from the emergence of a plethora of intriguing chemical and physical phenomena, often novel and unexpected, but also from its provision of important tool sets for the design of core components for novel chemical, electronic, and photonic devices such as quantum computers, lasers, amplifiers, modulators, sensors and more. Strong coupling has been demonstrated for various material systems and spectral regimes, each exhibiting unique features and applications. In this perspective, we will focus on a sub-field of this domain of research and discuss the strong coupling between metamaterials and photonic cavities at THz frequencies . The metamaterials, themselves electromagnetic resonators, serve as "artificial atoms". We provide a concise overview of recent advances and outline possible research directions in this vital and impactful field of interdisciplinary science., Competing Interests: Conflict of interest: Authors state no conflicts of interest., (© 2024 the author(s), published by De Gruyter, Berlin/Boston.)

Over the past few decades, THz technology has made considerable progress, evidenced by the performance of current THz sources and detectors, as well as the emergence of several THz applications. However, in the realm of quantum technologies, the THz spectral domain is still in its infancy, unlike neighboring spectral domains that have flourished in recent years. Notably, in the microwave domain, superconducting qubits currently serve as the core of quantum computers, while quantum cryptography protocols have been successfully demonstrated in the visible and telecommunications domains through satellite links. The THz domain has lagged behind in these impressive advancements. Today, the current gap in the THz domain clearly concerns quantum technologies. Nonetheless, the emergence of quantum technologies operating at THz frequencies will potentially have a significant impact. Indeed, THz radiation holds significant promise for wireless communications with ultimate security owing to its low sensitivity to atmospheric disturbances. Moreover, it has the potential to raise the operating temperature of solid-state qubits, effectively addressing existing scalability issues. In addition, THz radiation can manipulate the quantum states of molecules, which are recognized as new platforms for quantum computation and simulation with long range interactions. Finally, its ability to penetrate generally opaque materials or its resistance to Rayleigh scattering are very appealing features for quantum sensing. In this perspective, we will discuss potential approaches that offer exciting prospects for generating and detecting non-classical states of THz light, thereby opening doors to significant breakthroughs in THz quantum technologies., Competing Interests: Conflict of interest: Authors state no conflicts of interest., (© 2024 the author(s), published by De Gruyter, Berlin/Boston.)

We investigate the nonlinear refraction induced by Rydberg excitons in Cu_{2}O. Using a high-precision interferometry imaging technique that spatially resolves the nonlinear phase shift, we observe significant shifts at extremely low laser intensity near each exciton resonance. From this, we derive the nonlinear index n_{2}, present the n_{2} spectrum for principal quantum numbers n≥5, and report large n_{2} values of order 10^{-3}  mm^{2}/mW. Moreover, we observe a rapid saturation of the Kerr nonlinearity and find that the saturation intensity I_{sat} decreases as n^{-7}. We explain this with the Rydberg blockade mechanism, whereby giant Rydberg interactions limit the exciton density, resulting in a maximum phase shift of 0.5 rad in our setup.

We demonstrate a table-top source delivering ultra-broadband THz pulses with electric field strength exceeding 100 kV/cm at a repetition rate of 200 kHz. The source is based on optical rectification of 23 fs pulses at 1030 nm delivered by a ytterbium-doped fiber laser followed by a nonlinear temporal compression stage. We generate THz pulses with a conversion efficiency of up to 0.11 % with a spectrum extending to 11 THz using a 1 mm thick GaP crystal and a conversion efficiency of 0.016 % with a spectrum extending to 30 THz using a 30 µm thick GaSe crystal. The essential features of the emitted THz pulse spectra are well captured by simulations of the optical rectification process relying on coupled nonlinear equations. Our ultrafast laser-based source uniquely satisfies an important requirement of nonlinear THz experiments, namely the emission of ultra-broadband THz pulses with high electric field amplitudes at high repetition rates, opening a route towards nonlinear time-resolved THz experiments with high signal-to-noise ratios.

Millimeter wave (mmWave) generation using photonic techniques has so far been limited to the use of near-infrared lasers that are down-converted to the mmWave region. However, such methodologies do not currently benefit from a monolithic architecture and suffer from the quantum defect i.e. the difference in photon energies between the near-infrared and mmWave region, which can ultimately limit the conversion efficiency. Miniaturized terahertz (THz) quantum cascade lasers (QCLs) have inherent advantages in this respect: their low energy photons, ultrafast gain relaxation and high nonlinearities open up the possibility of innovatively integrating both laser action and mmWave generation in a single device. Here, we demonstrate intracavity mmWave generation within THz QCLs over the unprecedented range of 25 GHz to 500 GHz. Through ultrafast time resolved techniques, we highlight the importance of modal phases and that the process is a result of a giant second-order nonlinearity combined with a phase matched process between the THz and mmWave emission. Importantly, this work opens up the possibility of compact, low noise mmWave generation using modelocked THz frequency combs.

Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime, i.e., single electron transport regime, remains unexplored. Here, we demonstrate the ultrasensitive photoresponse to THz radiation (from <0.1 to 10 THz) of a hBN-encapsulated GQD in the Coulomb blockade regime at low temperature (170 mK). We show that THz radiation of ∼10 pW provides a photocurrent response in the nanoampere range, resulting from a renormalization of the chemical potential of the GQD of ∼0.15 meV. We attribute this photoresponse to an interfacial photogating effect. Furthermore, our analysis reveals the absence of thermal effects, opening new directions in the study of coherent quantum effects at THz frequencies in GQDs.

The use of fundamental modelocking to generate short terahertz (THz) pulses and THz frequency combs from semiconductor lasers has become a routine affair, using quantum cascade lasers (QCLs) as a gain medium. However, unlike classic laser diodes, no demonstrations of harmonic modelocking, active or passive, have been shown in THz QCLs, where multiple pulses per round trip are generated when the laser is modulated at the harmonics of the cavity's fundamental round-trip frequency. Here, using time-resolved THz techniques, we show for the first time harmonic injection and mode-locking in which THz QCLs are modulated at the harmonics of the round-trip frequency. We demonstrate the generation of the harmonic electrical beatnote within a QCL, its injection locking to an active modulation and its direct translation to harmonic pulse generation using the unique ultrafast nature of our approach. Finally, we show indications of self-starting harmonic emission, i.e., without external modulation, where the QCL operates exclusively on a harmonic (up to its 15th harmonic) of the round-trip frequency. This behaviour is supported by time-resolved simulations of induced gain and loss in the system and shows the importance of the electronic, as well as photonic, nature of QCLs. These results open up the prospect of passive harmonic modelocking and THz pulse generation, as well as the generation of low-noise microwave generation in the hundreds of GHz region., Competing Interests: Conflict of interestThe authors declare that they have no conflict of interest., (© The Author(s) 2020.)

Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures. These resonant nonlinearities continually attract attention, particularly in newly discovered materials. However, they are frequently not as heightened as currently predicted, limiting their exploitation in nanostructured nonlinear optics. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant destructive, as well as constructive, interference effects in complex systems. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband nonlinearities, we show that these giant interferences are a result of an unexpected interplay of the second-order nonlinear contributions of multiple light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of nanostructures, this advanced framework can be used as a novel, sensitive tool to elucidate the band structure properties of complex materials., (Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).)

Polarimetric measurements in the terahertz (THz) range have a wide range of applications in material science and physico-chemistry. Usually performed using mechanically controlled elements, such measurements are inherently limited in precision and acquisition rate. Here, we propose and realize an innovative concept of a THz pulse emitter, linearly polarized, which allows electrical continuous control of the polarization direction and modulation ability up to several tens of kHz. It consists in an interdigitated photoconductive switch with an intermixed sickle geometry, where the vertical and horizontal components of the electric field are intermixed at a subwavelength scale. We demonstrate that such an emitter permits control of the direction and amplitude emitted with an excellent degree of polarization up to 4 THz, which is estimated to be experimentally better than 98%. This work opens perspectives for sensitivity improvements in THz polarimetry with lock-in detection schemes.

By combining the advantages of the high-speed ASOPS technology and efficient THz generation, we have realized a high-speed laser-based spectroscopic THz imaging system with more than 10,000 pixels per second acquisition speed and an excellent signal-to-noise ratio of more than 100. Unlike THz line cameras or mm-wave intensity detectors, the present device allows for a much higher spatial resolution and attributes each imaging pixel with phase and amplitude information up to several THz while simultaneously maintaining a very high scanning speed unmatched by any other technique presented so far. The high-speed acquisition allows for samples to be scanned even at sample velocities of 5 m/s or higher while preserving the fundamental resolution limit of the THz radiation, which is on the order of 500 µm in the present case.

The original version of this Article contained an error in the Acknowledgements, which incorrectly omitted the following: 'We also acknowledge support from the Australian Research Council's Discovery Projects Funding Scheme (Grant DP 160 103910).' This has been corrected in both the PDF and HTML versions of the Article.

High permittivity SrTiO 3 for the realization of all-dielectric metamaterials operating at terahertz frequencies was fabricated. A comparison of different processing methods demonstrates that Spark Plasma Sintering is the most effective sintering process to yield high density ceramic with high permittivity. We compare this sintering process with two other processes. The fabricated samples are characterized in the low frequency and in the terahertz frequency ranges. Their relative permittivities are compared with that of a reference SrTiO 3 single crystal. The permittivity of the sample fabricated by Spark Plasma Sintering is as high as that of the single crystal. The role of the signal-to-noise ratio in the measurements at terahertz frequency is detailed.

Single-mode frequency-tuneable semiconductor lasers based on monolithic integration of multiple cavity sections are important components, widely used in optical communications, photonic integrated circuits and other optical technologies. To date, investigations of the ultrafast switching processes in such lasers, essential to reduce frequency cross-talk, have been restricted to the observation of intensity switching over nanosecond-timescales. Here, we report coherent measurements of the ultrafast switch-on dynamics, mode competition and frequency selection in a monolithic frequency-tuneable laser using coherent time-domain sampling of the laser emission. This approach allows us to observe hopping between lasing modes on picosecond-timescales and the temporal evolution of transient multi-mode emission into steady-state single mode emission. The underlying physics is explained through a full multi-mode, temperature-dependent carrier and photon transport model. Our results show that the fundamental limit on the timescales of frequency-switching between competing modes varies with the underlying Vernier alignment of the laser cavity.

Diffraction is the ultimate limit at which details of objects can be resolved in conventional optical spectroscopy and imaging systems. In the THz spectral range, spectroscopy systems increasingly rely on ultra-broadband radiation (extending over more 5 octaves) making a great challenge to reach resolution limited by diffraction. Here, we propose an original easy-to-implement wavefront manipulation concept to achieve ultrabroadband THz spectroscopy system with diffraction-limited resolution. Applying this concept to a large-area photoconductive emitter, we demonstrate diffraction-limited ultra-broadband spectroscopy system up to 14.5 THz with a dynamic range of 10(3). The strong focusing of ultrabroadband THz radiation provided by our approach is essential for investigating single micrometer-scale objects such as graphene flakes or living cells, and besides for achieving intense ultra-broadband THz electric fields.

The far-field emission profile of terahertz quantum cascade lasers (QCLs) in metal-metal waveguides is controlled in directionality and form through planar horn-type shape structures, whilst conserving a broad spectral response. The structures produce a gradual change in the high modal confinement of the waveguides and permit an improved far-field emission profile and resulting in a four-fold increase in the emitted output power. The two-dimensional far-field patterns are measured at 77 K and are agreement in with 3D modal simulations. The influence of parasitic high-order transverse modes is shown to be controlled by engineering the horn structure (ridge and horn widths), allowing only the fundamental mode to be coupled out.

We demonstrate broadband (20 THz), high electric field, terahertz generation using large area interdigitated antennas fabricated on semi-insulating GaAs. The bandwidth is characterized as a function of incident pulse duration (15-35 fs) and pump energy (2-30 nJ). Broadband spectroscopy of PTFE is shown. Numerical Drude-Lorentz simulations of the generated THz pulses are performed as a function of the excitation pulse duration, showing good agreement with the experimental data.

Graphene has been proposed as a particularly attractive material for the achievement of strong optical nonlinearities, in particular generation of terahertz radiation. However, owing to the particular symmetries of the C-lattice, second-order nonlinear effects such as difference-frequency or rectification processes are predicted to vanish in a graphene layer for optical excitations (ℏω ≫ 2EF) involving the two relativistic dispersion bands. Here we experimentally demonstrate that graphene excited by femtosecond optical pulses generate a coherent THz radiation ranging from 0.1 to 4 THz via a second-order nonlinear effect. We fully interpret its characteristics with a model describing the electron and hole states beyond the usual massless relativistic scheme. This second-order nonlinear effect is dynamical photon drag, which relies on the transfer of light momentum to the carriers by the ponderomotive electric and magnetic forces. The model highlights the key roles of next-C-neighbor couplings and of unequal electron and hole lifetimes in the observed second-order response. Finally, our results indicate that dynamical photon drag effect in graphene can provide emission up to 60 THz, opening new routes for the generation of ultrabroadband terahertz pulses.

Research on surface waves supported by metals at THz frequencies is experiencing a tremendous growth due to their potential for imaging, biological sensing and high-speed electronic circuits. Harnessing their properties is, however, challenging because these waves are typically poorly confined and weakly bound to the metal surface. Many design strategies have been introduced to overcome these limitations and achieve increased modal confinement, including patterned surfaces, coated waveguides and a variety of sub-wavelength geometries. Here we provide evidence, using a combination of numerical simulations and time-resolved experiments, that shrinking the transverse size of a generic metallic structure always leads to solutions with extreme field confinement. The existence of such a general behavior offers a new perspective on energy confinement and should benefit future developments in THz science and technology.

The dispersion relation and confinement of terahertz surface plasmon modes propagating along planar Goubau lines are studied using guided-wave time domain spectroscopy. We demonstrate the radial nature of the surface plasmon mode known as the Goubau mode and the transverse confinement of the electric field over a few tenths of microns (~l/10). We experimentally and computationally observed a transition of the shape of the THz pulses from unipolar to bipolar as the propagation distance increases, indicating that the Goubau line acts as a high-pass filter. The deviation of the dispersion relation curve from a linear law above 600 GHz is discussed.

We present a detailed study of the effect of the carrier lifetime on the terahertz signal characteristics emitted by Br(+)-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and the average radiated powers for various carrier lifetimes are experimentally analyzed and compared to predictions of analytical models of charge transport. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The power radiated by ion-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength optical pulses is measured to be 0.8 muW. This value is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses.

We report the first demonstration of a terahertz photomixer made of ion-irradiated In(0.53)Ga(0.47)As lattice-matched to InP and fiber-optic coupled with the drive lasers. A continuous-wave radiation is generated at frequencies up to 0.8 THz by photomixing two continuous-wave laser diodes around 1.55 microm. The measured 3dB-down bandwidth of 300 GHz yields a carrier lifetime of 0.53 ps, in agreement with the value of 0.41 ps measured in pump probe experiments. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.