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The effect of ion optics settings on the degree of suppression of analyte signals due to the presence of different basic elements in a sample solution, such as manganese, copper, indium, lanthanum, hafnium, and lead, was investigated on an example of an XSeries II inductively coupled plasma mass spectrometer. The effect of atomic mass and the concentration of the matrix element on the optimum values of ion optics settings and the change in the analyte signals was studied. It was shown that a decrease in the potential of the extractor lens to -300 V can significantly reduce the matrix effect. As an example, the results of determining impurity elements in solutions containing up to 1 g/L of lanthanum were obtained using standard settings of the spectrometer with a reduced voltage on the extractor. It was shown that the optimization of ion optics settings enables the use of more concentrated solutions, thus reducing the detection limits for elements by several times. Keywords: mass spectrometry, inductively coupled plasma, matrix effect DOI: 10.1134/S1061934814010092, Inductively coupled plasma mass spectrometry (ICP-MS) has been one of the main methods for the multielement analysis of various substances. Within a few years after the introduction of ICP-MS into [...]

Indium phosphide-based quantu m dash mode-locked lasers designed for optical telecomunications applications are designed. These generate picosecond pulses at different repetition frequencies with low timing jitter and can be used to achieve all-optical clock recovery.

Analog and digital circuits for use in very high data rate systems were fabricated using indium phosphide double-heterojunction bipolar transistor technology. Circuits designed using the technology have high breakdown and high electron mobility, making them ideal for fiber optic telecommunications systems.

In[I.sub.3] has catalyzed the conversion of methanol to hydrocarbons with high selectivity for one particular highly branched alkane, 2,2,3-trimethylbutane (triptane), just like Zn[I.sub.2]. The differences between Zn[I.sub.2]- and In[I.sub.3]-catalyzed reactions and the behavior of mixed Zn[I.sub.3]/In[I.sub.3] catalysts for conversion of methanol to triptane are described for in terms of higher Lewis acidity of In[I.sub.3] and greater ability to promote alkane activation and hydrogen-transfer reactions.

The refrigeration processes in the InP/AlInAs triple-well semiconductor system with different structures are studied based on the model of optothermionic refrigeration. The temperature drop distributions for hot semiconductor devices are obtained with several parameters, which have included the cross-sectional area, generation heat and refrigeration heat.

The synthesis and crystal chemistry of indium metal-oxide organic frameworks containing metal-oxide chains connected by different dicarboxylate anions is discussed. The studies provide insight into the influence of the ligand geometry on the coordination of the In atoms and on the formation of the In-O chains.

A full band structure derived from a hybrid pseudopotential tight-binding Hamiltonian was used to calculate the temperature and carrier density dependent two-photon absorption coefficients, free carrier absorption cross section, and Auger lifetimes in InAs, InSb, and HgCdTe alloys. The accurate evaluation of all parameters in the model could provide insight into the underlying mechanisms and selection of materials for light propagation appliations.

The interband optical transitions in the interdiffused InAs quantum dash (QD) in InAlGaAs quantum well (QW) structures are studied by using room temperature surface photovoltage (SPV) spectroscopy. The results have shown the potential of the SPV spectroscopy as a nondestructive, contactless method to characterize optical transitions in complex semiconductor nanostructures at room temperature.

In situ reflection high-energy electron diffraction (RHEED) is used for examining the growth of indium on a vicinal Si(100)-(2*1) surface at room temperature by femtosecond pulsed laser deposition (fsPLD). The deposition of In on Si(100)-(2*1) by fsPLD has affected the formation of the initial In-(2*1) layer and the morphology of the growth islands.

Indium iodide (InI) is a compound semiconductor with a wide band gap. Due to its high atomic number ([Z.sub.In] : 49 and [Z.sub.I] : 53) and high density (5.31 g/[cm.sup.3]), InI exhibits high photon stopping power similar to that of CdTe. Since InI has wide band gap energy (2.0 eV), radiation detectors fabricated from InI are expected to realize low-noise operation at and above room temperatures. These physical properties indicate that InI is a very promising material for fabrication of room temperature X- and gamma-ray detectors. In this study, radiation detectors were fabricated from InI crystals. InI materials were purified by the multi-pass zone-refining method up to 80 times. InI crystals were grown by the traveling molten zone (TMZ) method with the zone-purified materials. The resultant InI radiation detectors were evaluated by measuring their electrical property, spectral responses and long-term stability. The resistivity of the InI detectors were found to be approximately 3 x [10.sup.9] ([OMEGA]cm). The InI detector exhibited a clear peak corresponding to 22 keV X-rays from a [10.sup.9] Cd radioactive source at room temperature. To evaluate the long-term stability of the InI detectors, temporal change of the energy spectra of the detectors was measured for a period of time at 20[degrees]C and at -20[degrees]C. At 20[degrees]C, the InI detectors exhibited some degradation in spectral response. On the other hand, the InI detectors operated stably for more than 32 hours at -20[degrees]C. Index Terms--Crystal growth, gamma-ray spectroscopy, radiation detectors, semiconductor materials.

Gold nanoparticles deposited on indium-tin-oxide coated substrates show substantial circularly polarized acoustically induced light gyration (AILG) at liquid-helium temperature. The effect was observed only during simultaneous treatment by two coherent acoustic waves with basic frequencies of 0.8-1.6 MHz and corresponding coherent double-frequency acoustical components. It was found that increasing the basic acoustical frequency to 1.6 MHz led to suppression of the effect. A Ti:sapphire laser with a pulse duration of approximately 80 fs allowed us to achieve the maximal value for the AILG. Enhancement of the pulse duration higher than 200 fs also substantially diminished the effect. The maximally achieved value of the AILG susceptibility (described by a fourth-order axial tensor) caused by the circularly polarized acoustical probe field at an acoustical power density of approximately 3 W/[cm.sup.2] at T = 4.2 K was equal to approximately 7.8 deg/mm for the circular acoustical wave polarization. The maximal AILG coefficient is achieved for samples that possess minimal resistivity. The investigated composites possess an acoustically induced helicoidal grating that disappeared 20 s after switching off the acoustical fields. OCIS codes: 260.0260, 250.0250.

The effect of an initial saturation coverage of antimony on the growth of indium arsenide quantum dots on gallium arsenide, during metalorganic vapor-phase epitaxy, was studied. The results showed that antimony incorporates into the quantum dots, increasing their density and total volume, and causing them to be more densely clustered together.

A study is carried out on one-dimensional (In, Ga)As quantum dot (QD) arrays that are created on planer singular, vicinal, and shallow mesa-patterned GaAs (100) substrates by self-organized anisotropic strain engineering of an (In, Ga) As/GaAs quantum wire (QWR) superlattice template in molecular beam epitaxy. The results obtained from the study establish relationship between self-organized anisotropic strain and step engineering.

A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/GaAs quantum well structure repeatedly diffused under thermally accurate and timed annealing conditions was carried out. The study demonstrates that the Fickian model with a constant coefficient of diffusion is inadequate and that the distribution of compositions of the diffused well cannot be fitted with error functions.

A study on a polarity-sensitive electro-optical response observed in nematic liquid crystal cells characterized by asymmetric insertion of thin films of titania-vanadia oxide with a Ti/V atomic ratio of 1/1, prepared by sol-gel synthesis on transparent indium tin oxide is reported. Details shows that the thermal annealing of the films results in formation of structures that dramatically change the electric properties of the films.

The bcc structure contains the multiply endohedral cluster polyhedra shown around each lattice point, the last two shells being shared with like neighbors. Atom site preferences parallel the greater electronegativity of Cd over Tl.

Electrorefraction in doped InGaAs-InAsP quantum well (QW) within InP is studied and reported.

The perturbed angular correlation technique was used to study the effect of reduction treatments in H2 at 500 degree C in both wet and dry atmosphere on mono and bimetallic In-zeolite supported catalysts. A new indium species with cubic symmetry for the In site was detected in reduced In/ferrierite and InPt/ferrierite samples.

Growth of InAs islands on a GaAs(001) substrate is reported. The nanoscale pattern was generated in the SiO2 film by large-area interferometric lithography and dry etching.

The charge storage effect of the InAs nanodots with different size distribution is studied by using an Al0.5Ga0.5As/GaAs Fe structure. The number of stored electrons per dot is approximately 25, independent of the dot-size distribution, and the amount of stored charge per area increased with dot density.