194 results on '"Ikeda, Shunsuke"'
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52. Guiding of laser ablation plasma by axial magnetic field for a well-controlled ion source
53. Behaviors of moving plasma in solenoidal magnetic field in a laser ion source
54. Performance of the Low Charge State Laser Ion Source in BNL
55. Control of Laser Ablation Plasma by Pulsed Magnetic Field for Heavy Ion Beam Production
56. 提言 : アジア学術共同体の基盤形成をめざして
57. Control of Laser-Plasma Dynamics with Magnetic Field
58. InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric
59. レーザーアブレーションプラズマに対するパルス磁場の影響
60. Field Observation for the effluent of sediment and nutrient on the Coastal Area
61. Interaction of Laser Ablation Plasma with Axial Magnetic Field
62. Influence of Solenoidal Magnetic Field on Laser Ablation Plasma
63. Control of Plasma Flux with Pulsed Solenoid for Laser Ion Source
64. The Commissioning of the Laser Ion Source for RHIC-EBIS
65. A rare case of diploic venous anomaly: asymptomatic venous sac expanding in the diploe
66. Ruptured posterior spinal artery aneurysm: intraoperative and histologic findings with appreciable thrombosis
67. Contribution of material’s surface layer on charge state distribution in laser ablation plasma
68. レーザー生成プラズマとガイディング磁場の相互作用
69. 半導体ドレイン層及び狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化
70. 半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化
71. GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析
72. InPエッチング異方性による微細InGaAsチャネルMOSFET
73. Vertical InGaAs MOSFET with HfO2 gate
74. 電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性
75. Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode
76. MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm
77. 裏面電極を有するⅢ-Ⅴ族量子井戸型チャネルMOSFET
78. InP/InGaAs MOSFET with back-gate electrode bonded on Si substrate
79. Investigation of the Tail of a Fe Plasma Plume Passing Through Solenoidal Magnetic Field for a Laser Ion Source
80. Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut
81. Preliminary result of rapid solenoid for controlling heavy-ion beam parameters of laser ion source
82. III-V族サブミクロンチャネルを有する高移動度MOSFET
83. 再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性
84. Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特
85. InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure
86. Expression of acidosis-dependent genes in human cancer nests
87. Creation of mixed beam from alloy target and couple of pure targets with laser
88. Analyses of the plasma generated by laser irradiation on sputtered target for determination of the thickness used for plasma generation
89. Investigation of effect of solenoid magnet on emittances of ion beam from laser ablation plasma
90. レーザーイオン源のための磁場によるプラズマフラックスの制御
91. High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
92. Plasma Transport in Periodic Magnetic Field by Permanent Ring Magnets
93. Surgical Strategies of Cerebral Arteriovenous Malformations and Dural Arteriovenous Fistulas
94. Control of Laser Ablation Plasma with Longitudinal Magnetic Field
95. Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode
96. High drain current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with shrinkage of channel length by InP anisotropic etching
97. Erratum: “InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al$_{2}$O$_{3}$ Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/$\mu$m”
98. InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm
99. Beam Dynamics Studies in High-Flux Ion Injectors and during Longitudinal Bunch Compression for High Power Ion Acceleration
100. Branched fatty acids inhibit the biosynthesis of menaquinone in Helicobacter pylori
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