264 results on '"Heinemann, Bernd"'
Search Results
52. SiGe BiCMOS Current Status and Future Trends in Europe
53. Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data.
54. Towards 100 Gbps: A Fully Electronic 90 Gbps One Meter Wireless Link at 230 GHz
55. A High-Speed QPSK/16-QAM 1-m Wireless Link with a Tunable 220–260 GHz LO Carrier in SiGe HBT Technology
56. Towards 100 Gbps: A Fully Electronic 90 Gbps One Meter Wireless Link at 230 GHz
57. 0.3-THz SiGe-Based High-Efficiency Push–Push VCOs With > 1-mW Peak Output Power Employing Common-Mode Impedance Enhancement
58. A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS
59. A 65 Gbps QPSK one meter wireless link operating at a 225–255 GHz tunable carrier in a SiGe HBT technology
60. Solid-State Terahertz Superresolution Imaging Device in 130-nm SiGe BiCMOS Technology
61. A 219–266 GHz fully-integrated direct-conversion IQ receiver module in a SiGe HBT technology
62. Physics-based modeling of sige HBTs with fj of 450 GHz with HICUM Level 2
63. SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
64. Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
65. A lens-integrated 430 GHz SiGe HBT source with up to −6.3 dBm radiated power
66. High data-rate communication link at 240 GHz with on-chip antenna-integrated transmitter and receiver modules in SiGe HBT technology
67. A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology
68. Experimental verification of TCAD simulation for high-performance SiGe HBTs
69. A 0.55 THz Near-Field Sensor With a $\mu \text{m}$ -Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS
70. A 210–270-GHz Circularly Polarized FMCW Radar With a Single-Lens-Coupled SiGe HBT Chip
71. A 275 GHz amplifier in 0A3μm SiGe
72. Photonic BiCMOS technology — Enabler for Si-based, monolithically integrated transceivers towards 400 Gbps
73. (Invited) SiGe Applications in Automotive Radars
74. Optimization of Large Titanium Sublimation Pumps for the Neutral Beam Injection System on AUG and W7-X
75. Heating Neutral Beams for ITER: Present Status
76. A SiGe-based broadband 140–170-GHz downconverter for high resolution FMCW radar applications
77. A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology
78. 25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS
79. Manufacturing of the full size prototype of the ion source for the ITER neutral beam injector – The SPIDER beam source
80. A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc/Hz FoMT
81. INTERNES RECRUITING gegen den Personalmangel.
82. A 246 GHz fundamental source with a peak output power of 2.8 dBm
83. A lens-coupled 210–270 GHz circularly polarized FMCW radar transceiver module in SiGe technology
84. A 70 GHz static dual-modulus frequency divider in SiGe BiCMOS technology
85. Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology
86. J-band amplifier design using gain-enhanced cascodes in 0.13 μm SiGe
87. 160-GHz to 1-THz Multi-Color Active Imaging With a Lens-Coupled SiGe HBT Chip-Set
88. A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications
89. A 233-GHz low noise amplifier with 22.5dB gain in 0.13μm SiGe
90. A 240 GHz circular polarized FMCW radar based on a SiGe transceiver with a lens-integrated on-chip antenna
91. An 8-way power-combining E-band amplifier in a SiGe HBT technology
92. A 0.55 THz Near-Field Sensor With a \mu \textm -Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS.
93. Comments on I.Futo, T.Gergely
94. Application of SiGe:C BiCMOS to Wireless and Radar
95. SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay
96. 235–275 GHz (x16) frequency multiplier chains with up to 0 dBm peak output power and low DC power consumption
97. Toward a Large RF Ion Source for the ITER Neutral Beam Injector: Overview of the ELISE Test Facility and First Results
98. 14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS
99. A wide band 215–255 GHz CB differential amplifier in a 0.25-μm SiGe HBT technology
100. Current status of the neutral beam heating system of W7-X
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.