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Metal-to-insulator transitions (MITs) are a dramatic manifestation of strong electron correlations in solids1. The insulating phase can often be suppressed by quantum tuning, i.e. varying a nonthermal parameter such as chemical composi- tion or pressure, resulting in a zero-temperature quantum phase transition (QPT) to a metallic state driven by quantum fluctuations, in contrast to conventional phase transitions driven by thermal fluctuations. Theories of exotic phenomena known to occur near the Mott QPT such as quantum criticality and high-temperature superconductivity often assume a second-order QPT, but direct experimental evidence for either first- or second-order behavior at the magnetic QPT associated with the Mott transition has been scarce and further masked by the superconducting phase in unconventional superconductors. Most measurements of QPTs have been performed by volume-integrated probes, such as neutron scattering, magnetization, and transport, in which discontinuous behavior, phase separation, and spatially inhomogeneous responses are averaged and smeared out, leading at times to misidentification as continuous second-order transitions. Here, we demonstrate through muon spin relaxation/rotation (MuSR) experiments on two archetypal Mott insulating systems, composition-tuned RENiO3 (RE=rare earth element) and pressured-tuned V2O3, that the QPT from antiferromagnetic insulator to paramagnetic metal is first-order: the magnetically ordered volume fraction decreases to zero at the QPT, resulting in a broad region of intrinsic phase separation, while the ordered magnetic moment retains its full value across the phase diagram until it is suddenly destroyed at the QPT. These findings call for further investigation into the role of inelastic soft modes and the nature of dynamic spin and charge fluctuations underlying the transition., Comment: Main text: 9 pages, 3 figures; Supplementary Information: 2 pages, 2 figures

(La1-xSrx)(Zn1-yMny)AsO is a two dimensional diluted ferromagnetic semiconductor that has the advantage of decoupled charge and spin doping. The substitution of Sr2+ for La3+ and Mn2+ for Zn2+ into the parent semiconductor LaZnAsO introduces hole carriers and spins, respectively. This advantage enables us to investigate the influence of carrier doping on the ferromagnetic ordered state through the control of Sr concentrations in (La1-xSrx)(Zn0.9Mn0.1)AsO. 10 % Sr doping results in a ferromagnetic ordering below TC ~ 30 K. Increasing Sr concentration up to 30 % heavily suppresses the Curie temperature and saturation moments. Neutron scattering measurements indicate that no structural transition occurs for (La0.9Sr0.1)(Zn0.9Mn0.1)AsO below 300 K., Comment: Submitted to EPL

We use muon spin relaxation (muSR) to investigate the magnetic properties of a bulk form diluted ferromagnetic semiconductor (DFS) Li1.15(Zn0.9Mn0.1)P with T_C ~ 22 K. MuSR results confirm the gradual development of ferromagnetic ordering below T_C with a nearly 100% magnetic ordered volume. Despite its low carrier density, the relation between static internal field and Curie temperature observed for Li(Zn,Mn)P is consistent with the trend found in (Ga,Mn)As and other bulk DFSs, indicating these systems share a common mechanism for the ferromagnetic exchange interaction. Li1+y(Zn1-xMnx)P has the advantage of decoupled carrier and spin doping, where Mn2+ substitution for Zn2+ introduces spins and Li+ off-stoichiometry provides carriers. This advantage enables us to investigate the influence of overdoped Li on the ferromagnetic ordered state. Overdoping Li suppresses both T_C and saturation moments for a certain amount of spins, which indicates that more carriers are detrimental to the ferromagnetic exchange interaction, and that a delicate balance between charge and spin densities is required to achieve highest T_C.

We report the synthesis and characterization of bulk form diluted magnetic semiconductors I-II-V Li1.1(Zn1-xCrx)As (x = 0.03, 0.05, 0.10, 0.15)with a cubic crystal structure identical to that of III-V GaAs and II-VI zinc-blende ZnSe. With p-type carriers created by excess Li, 10% Cr substitution for Zn results in a ferromagnetic ordering below TC ~ 218 K. Li(Zn,Cr)As represents another magnetic semiconducting system with the advantage of decoupling carriers and spins, where carriers are created by adding extra Li and spins are introduced by Cr substitution for Zn., Comment: arXiv admin note: substantial text overlap with arXiv:1403.4019

We investigate the static and dynamic spin susceptibility of the 111 type Fe-based superconductor LiFeP with Tc ~ 5 K through the measurement of Knight shift 31K and the spin-lattice relaxation rate 1/T1 at 31P site by nuclear magnetic resonance. The constant 31K, small magnitudes of 1/T1T, along with the resistivity rho ~ T^2 all point to the weak spin correlations in LiFeP. 1/T1T display small enhancement toward Tc, indicating that the superconductivity is intimately correlated with the antiferromagnetic spin fluctuations., Comment: Accepted for publication in EPL

We report the synthesis and characterization of bulk form diluted magnetic semiconductors Ba(Zn1-2xMnxCox)2As2 (0 <= x <= 0.15) with a crystal structure identical to that of 122-type Fe-based superconductors. Mn and Co co-doping into the parent compound BaZn2As2 results in a ferromagnetic ordering below TC ~ 80 K. Hall effect measurements indicate that the carrier are n-type with the density of ~10^17/cm3. The common crystal structure and excellent lattice matching between the p-type ferromagnetic (Ba1-yKy)(Zn1-xMnx)2As2, the n-type ferromagnetic Ba(Zn1-2xMnxCox)2As2, the antiferrmagnetic BaMn2As2 and the superconducting Ba(Fe1-xCox)2As2 systems make it possible to make various junctions between these systems through the As layer.

A new diluted magnetic semiconductor system, (Sr3La2O5)(Zn1-xMnx)2As2, has been synthesized and characterized. 10% Mn substitution for Zn in bulk form (Sr3La2O5)Zn2As2 results in a ferromagnetic ordering below Curie temperature, TC ~ 40 K. (Sr3La2O5)(Zn1-xMnx)2As2 has a layered crystal structure identical to that of 32522-type Fe based superconductors, and represents the fifth DMS family that has a direct counterpart among the FeAs high temperature superconductor families., Comment: Accepted for publication in EPL

The doping effect of Sr and transition metals Mn, Fe, Co into the direct-gap semiconductor LaZnAsO has been investigated. Our results indicate that the single phase ZrCuSiAs-type tetragonal crystal structure is preserved in (La1-xSrx)(Zn1-xTMx)AsO (TM = Mn, Fe, Co) with the doping level up to x = 0.1. While the system remains semiconducting, doping with Sr and Mn results in ferromagnetic order with TC ~ 30K, and doping with Sr and Fe results in a spin glass like state below ~6K with a saturation moment of ~0.02 muB/Fe, an order of magnitude smaller than the ~0.4 muB/Mn of Sr and Mn doped samples. The same type of magnetic state is observed neither for (Zn,Fe) substitution without carrier doping, nor for Sr and Co doped specimens., Comment: Accepted for publication in EPL