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Since SrVO3 (SVO) can be used as a highly conductive material for perovskite heterostructures, the control of surface morphology and chemistry of such thin‐films are essential. Using pulsed laser deposition, two distinct topographies can be produced. Thus, by tuning oxygen pressure in the growth chamber during cooling, smooth or partially covered by self‐oriented Sr3V2O8 nanorods surfaces can be grown. This study manages to correlate the two typical topographies, revealed by atomic force microscopy (AFM), with their chemical compositions obtained by X‐ray photoelectron spectroscopy (XPS). At first, a model describes their initial surface chemistry through the Sr/V cationic ratio and the (Sr+V)/Oox ratio. Furthermore, using sputter‐depth profiling, post‐thermal treatments and wet chemical etching, SVO thin‐film chemical compositions are extensively studied. We demonstrate that they are composed of stoichiometric SVO phase covered by Sr‐rich layer on top. Finally, treatment in water for 180 seconds helps to remove Sr‐rich phases. Sr3V2O8 nanorods are found selectively dissolved leaving a surface nano‐imprint. Moreover, on smooth SVO surfaces, a balanced Sr/V cationic ratio of 1.0±0.1 is obtained. These results appear very promising for SVO thin‐films surface preparation and further development as electrodes for electronic devices. [ABSTRACT FROM AUTHOR]

SrVO3 (SVO) is a model system for strongly correlated oxides and is highly promising as conductive layer in heterostructures. Therefore, the control of electronic properties and morphology are essential for the advanced applications. Here, the oxygen stability during and after the deposition is explored, as SVO film is expected to undergo different postdeposition thermal and atmosphere treatments during its integration in a heterostructure. Hence, the influence of oxygen stability on morphology and electrical properties of the metallic SrVO3 grown by pulsed laser deposition has been investigated. Films grown under vacuum (SrVO3− δ ) exhibit a very smooth surface while films grown under higher oxygen pressure roughen and present nanostructures at the surface. These nanostructures are found to be of Sr3V2O8 phase and their apparition can be controlled by the oxygen supply. Subsequent thermal treatments at different temperatures under same oxygen pressure prevent formation of the Sr3V2O8 phase, lead to the stoichiometric SrVO3, and thus improve the transport properties. In this study is shown the extreme sensitivity of SVO to oxygen and the conditions to obtain high quality smooth SVO films with improved electrical properties for electrode application. [ABSTRACT FROM AUTHOR]

We have studied the chemical and electronic properties of LaAlO3/SrVO3 (SVO) ultrathin films by combining hard x-ray photoemission spectroscopy and transport measurements. We compare single SrVO3 (SVO) ultrathin films and SrVO3 buried below a polar LaAlO3 (LAO) thin layer, both epitaxially grown on SrTiO3. While ultrathin films (4 unit cells) of SVO do show insulating behavior over the entire temperature range, the LAO/SVO interface has a resistivity minimum at 250 K. When increasing the SVO layer thickness, the minimum is observed to shift to higher temperatures, but the resistivity always stays smaller than that of comparable SVO single films. Hard x-ray photoemission spectroscopy reveals a surface or interface related V5+ component in the V 2p spectra for SVO films and LAO/SVO heterostructures, respectively, attributed to a strongly oxidized component. This chemical reconstruction is weaker in LAO/SVO heterostructures compared to single SVO films. We show that this dead layer in SVO ultrathin films has to be considered when the film thickness reaches the few unit-cells limit and propose solutions on how to prevent this detrimental effect. [ABSTRACT FROM AUTHOR]

In situ optical characterizations of metal-insulator (MI) transition have been developed in a pulsed laser deposition (PLD) chamber. It consists of associating a spectroscopic ellipsometer and an infrared camera. The first one is sensitive to modifications of the optical indexes and the second one to the emissivity changes. We focus onto the metallic LaNiO3 and the insulating SrTiO3, which present opposite electrical properties as a function of their oxygen content. Using a combinatorial synthesis approach during fabrication by PLD onto LaAlO3 substrate, we observe the evolution of the apparent temperature for different area corresponding to single LaNiO3 or SrTiO3 layers and heterostructures during reduction and reoxygenation process at constant temperature. Thus, the possibility to grow off-stochiometric samples by PLD or to reduce them by heating under high vacuum, associated to the ability of injecting controlled quantity of oxygen by pulsed valve, provide us an original tool in order to study the (MI) transition. [ABSTRACT FROM AUTHOR]

The vanadate SrVO3 is a transparent conductor perovskite with optical and electrical properties competing with those of the most‐used indium tin oxide material. Although its charge density is comparable to that of metals, SrVO3 shows a plasma frequency below the visible range due to strong electronic correlations characterizing the electronic transport in this material and enhancing the effective mass. Therefore, the well‐known interplay between the structure and the electronic properties of strongly correlated systems can be used in such transparent conductor to tune the optical properties, as the plasma frequency also depends on the effective mass. In this study, SrVO3 films are grown by pulsed laser deposition onto different lattice mismatched perovskite substrates such as SrTiO3, LaAlO3, and (LaAlO3)0.3(Sr2TaAlO6)0.7 at different growth temperatures. The structural, electronic, and optical properties are analyzed, illustrating the influence of the strain on the structure of the films and on a shift of the plasma frequency. The electronic correlations in this new group of transparent conducting oxides can be therefore used as a supplementary lever for the tuning of the functional properties. SrVO3 thins films are grown by pulsed laser deposition onto SrTiO3, LaAlO3, and (LaAlO3)0.3(Sr2TaAlO6)0.7. Both optical and electrical properties of the films are investigated and demonstrate that such strongly correlated system is competing with the indium tin oxide as new transparent conducting oxide. The plasma frequency of the films depends on the substrate and can be easily tuned toward the infrared region. [ABSTRACT FROM AUTHOR]

We have investigated the effects of low-energy ion beam irradiations using argon clusters on the chemical and electronic properties of LaAlO 3 / SrTiO 3 (LAO/STO) heterointerfaces by combining x-ray photoelectron spectroscopy (XPS) and electrical transport measurements. Due to its unique features, we demonstrate that a short-time cluster ion irradiation of the LAO surface induces significant modifications in the chemical properties of the buried STO substrate with (1) a lowering of Ti atoms oxidation states (from Ti 4 + to Ti 3 + and Ti 2 + ) correlated to the formation of oxygen vacancies at the LAO surface and (2) the creation of new surface states for Sr atoms. Contrary to what is generally observed by using higher energy ion beam techniques, this leads to an increase of the electrical conductivity at the LAO/STO interface. Our XPS data clearly reveal the existence of dynamical processes on the titanium and strontium atoms, which compete with the effect of the cluster ion beam irradiation. These relaxation effects are in part attributed to the diffusion of the ion-induced oxygen vacancies in the entire heterostructure since an increase of the interfacial metallicity is also evidenced far from the irradiated area. This paper highlights the possibility of tuning the electrical properties of LAO/STO interfaces by surface engineering, confirming experimentally the intimate connection between LAO chemistry and electronic properties of LAO/STO interfaces. [ABSTRACT FROM AUTHOR]

Correlated transparent conducting oxides (TCOs) have gained great attention, because of their unique combination of transparency and metallic character. SrVO 3 (SVO) was identified as a high-performance TCO in the visible range. Few studies have investigated band structure engineering through chemical doping to enhance the optical properties of SVO. Here, we use two different strategies by exploiting the band-filling and width of the bands derived from Vanadium to tune the screened plasma frequency ω p * and the interband transition E p - d energy, corresponding to the optical transparency window edges. For control of the band-filling strategy, it is found that Titanium doped SVO has a wide transparency window, but such a composition does not maintain the high electrical conductivity required for TCO applications. Concerning the bandwidth strategy, the doping of SrVO 3 by Calcium shows that ω p * remains located in the IR range (1.12 eV), while E p - d is blue-shifted into the UV region (3.43 eV) due to reinforced electronic correlations. By an appropriate choice of dopant, we successfully increased the size of the transparency window by around 11% from 1.94 eV (SVO) to 2.30 eV (Calcium-doped SVO), while retaining high conductivity of around 2.30 × 10 4 (S·cm -1 ) and high charge carrier density of 2.93 × 10 22 cm -3 .

We have probed the structural and magnetic properties of PrVO 3 (PVO) thin films grown on the (001)-, (110)-, and (111)-oriented SrTiO 3 (STO) substrates. By changing the substrate orientation, the film out-of-plane orientation can be tuned to [110], [100]/[010], and [011]/[311], with different in-plane crystallographic variants. Accommodation of these variants on the different substrates implies different strain states, which have direct influence on the magnetic properties of PVO films. The magnetic moment of PVO films radically enhances from 0.4 μ B /f.u. for STO(001) to 2.3 μ B /f.u. for STO(111). While films on the (001)-oriented STO substrate display out-of-plane anisotropy, an in-plane anisotropy is observed for films grown on the (110)- and (111)-oriented STO substrates. In addition, a strong uniaxial magnetic anisotropy is also extracted for a partially relaxed film on the (110)-oriented STO substrate. Such findings can help oxide community for the better understanding of magnetic anisotropy in vanadate thin films, a subject that still suffer from significant lack of scientific investigations.

The integration of functional thin film materials with adaptable properties is essential for the development of new paradigms in information technology. Among them, complex oxides with perovskite structures have huge potential based on the particularly vast diversity of physical properties. Here, we demonstrate the possibility of transferring perovskite oxide materials like SrTiO 3 onto a silicon substrate using an environmentally friendly process at the nanoscale by means of a water-soluble perovskite sacrificial layer, SrVO 3 . Based on in situ monitoring atomic force microscopy and photoemission studies, we reveal that the dissolution is initiated from a strontium-rich phase at the extreme surface of SrVO 3 . The nanothick SrTiO 3 -transferred layer onto silicon presents appropriate morphology and monocrystalline quality, providing a proof of concept for the integration and development of all-perovskite-oxide electronics or "oxitronics" onto any Si-based substrate.