51. The differences in phase transition characteristics of antiferroelectric PbZrO3 thin films via grain size engineering.
- Author
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Li, Dongxu, Meng, Xiangyu, Peng, Feng, Yao, Zhonghua, Guo, Qinghu, Cao, Minghe, Liu, Hanxing, and Hao, Hua
- Subjects
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PHASE transitions , *ANTIFERROELECTRIC materials , *GRAIN size , *ENERGY storage , *GRAIN storage - Abstract
PbZrO 3 (PZO) possesses a unique antiferroelectric-ferroelectric (AFE-FE) phase transition under an external electric field and engages more attention in understanding and regulating the phase transition behavior. In this work, changing annealing temperature (600–750 °C) and ultralow content (5‰) ions doping are used to optimize the phase transition of PZO films via grain size engineering. As annealing temperature increases, the maximum polarization P max increases but forward/backward switching fields E F / E A reduce accompanied by the average grain size enhances from 622 to 686 nm. Following, 5‰ mol aliovalent ion La3+ or K+ doped PZO-650 films both enhance P max and E F / E A indicating the strengthened antiferroelectricity, and meanwhile the grain size enhances to ∼800 nm. A high discharge density of 31 J/cm3 is achieved for 5‰ mol La-doped PZO films at a low electric field of 1 MV/cm, which is ∼100 % higher than those of pure PZO films at different annealing temperatures. This work compares the phase transition characteristics changes in PZO films by changing annealing temperature and ultra-low content ion doping strategy, which would provide new thinking in grain size-engineered antiferroelectric materials for energy storage applications. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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