51. Arrays of TiO2 Nanosphere Monolayers on GaN-Based LEDs for the Improvement of Light Extraction
- Author
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Dohyun Kim, UiJin Jung, Wonjun Heo, Navneet Kumar, and Jinsub Park
- Subjects
TiO2 nanosphere monolayer ,transfer method ,GaN LED ,light extraction ,compound semiconductor ,Technology ,Engineering (General). Civil engineering (General) ,TA1-2040 ,Biology (General) ,QH301-705.5 ,Physics ,QC1-999 ,Chemistry ,QD1-999 - Abstract
We report on the fabrication of TiO2 nanosphere (NS) monolayer arrays for the enhancement of light extraction quantum efficiency of GaN-based light-emitting diodes (LEDs). The fabricated TiO2 NSs monolayer arrays were composed of different phases of anatase (An-) and amorphous (Am-) TiO2. The arrays were transferred onto the topmost layer of LED chips via the facile icing transfer method. The LED chips covered with Am-TiO2 NS monolayer arrays showed 3.0- times enhanced light output power intensity compared with reference LED chips at a fixed injection current of 100 mA. The enhanced light extraction of LED chips by an Am-TiO2 NS monolayer can be attributed to a high transmittance (91.1%) in visible and increased light extraction probability of photons generated in LEDs, resulting from the enhanced light coupling efficiency by reduced total internal reflection (TIR). Finite-difference time-domain (FDTD) simulation results also agreed well with the experimentally observed results. Based on the experimental and theoretical results, our suggested Am- and An-TiO2 NS arrays can be considered a very facile and effective method to improve the device performance of various visible LED chips.
- Published
- 2023
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