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51. Optical absorption quantization in thin films of semiconductors

Author

Delerue, Christophe, Prins, P. Tim, Lannoo, M, Hens, Zeger, Vanmaekelbergh, Daniel, Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Utrecht University [Utrecht], Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Inorganic and Physical Chemistry, Universiteit Gent = Ghent University [Belgium] (UGENT), Debye Institute for Nanomaterials Science, Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_COMPUTERSANDEDUCATION, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

Educational Events; International audience

Published
2021

52. Electronic properties of atomically coherent square PbSe nanocrystal superlattice resolved by Scanning Tunneling Spectroscopy

Author

Capiod, Pierre, Van Der Sluijs, Maaike, De Boer, Jeroen, Delerue, Christophe, Swart, Ingmar, Vanmaekelbergh, Daniel, Sub Condensed Matter and Interfaces, Condensed Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), European Project: FIRST STEP, Sub Condensed Matter and Interfaces, Condensed Matter and Interfaces, and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Materials science, Band gap, Superlattice, Scanning tunneling spectroscopy, Bioengineering, 02 engineering and technology, semiconductors, 010402 general chemistry, 01 natural sciences, materials, law.invention, chemistry.chemical_compound, Condensed Matter::Materials Science, law, Taverne, General Materials Science, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Spectroscopy, Electronic band structure, Lead selenide, 2D, Scanning Tunneling Spectroscopy, Local density of states, Condensed matter physics, Mechanical Engineering, 2D, materials, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 0104 chemical sciences, chemistry, Mechanics of Materials, nanocrystal superlattices, scanning tunneling microscopy, Scanning tunneling microscope, 0210 nano-technology
Abstract

International audience; Rock-salt lead selenide nanocrystals can be used as building blocks for large scale square superlattices via two-dimensional assembly of nanocrystals at a liquid-air interface followed by oriented attachment. Here we report Scanning Tunneling Spectroscopy (STS) measurements of the local density of states of an atomically coherent superlattice with square geometry made from PbSe nanocrystals. Controlled annealing of the sample permits the imaging of a clean structure and to reproducibly probe the band gap and the valence hole and conduction electron states. The measured band gap and peak positions are compared to the results of optical spectroscopy and atomistic tight-binding calculations of the square superlattice band Electronic properties of atomically coherent square PbSe nanocrystal superlattice resolved by Scanning Tunne structure. In spite of the crystalline connections between nanocrystals that induce significant electronic couplings, the electronic structure of the superlattices remains very strongly influenced by the effects of disorder and variability.

Published
2021

54. Room-Temperature Electron Transport in Self-Assembled Sheets of PbSe Nanocrystals with a Honeycomb Nanogeometry

Author

Alimoradi Jazi, Maryam, Kulkarni, Aditya, Sinai, Sophia Buhbut, Peters, Joep L, Geschiere, Eva, Failla, Michele, Delerue, Christophe, Houtepen, Arjan J, Siebbeles, Laurens D A, Vanmaekelbergh, Daniel, Sub Condensed Matter and Interfaces, Condensed Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], Optoelectronic Materials Section, Department of Chemical Engineering Delft University of Technology, Delft University of Technology (TU Delft), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Deparment of Chemistry, Opto-electronic materials section, DelftChemTech, ACKNOWLEDGMENTSM.A.J. acknowledges the H2020-MSCA-ITN-2014 Program'-Phonsi, (Nanophotonics by nanocrystals, from integration tosingle photon operation)' for financial support. A.K. acknowledges the Dutch FOM programme 'Designing Dirac carriers inhoneycomb semiconductor superlattices' (No. 67595) forfinancial support. D.V. acknowledges support by ERC researchcouncil, ERC-Advanced Grant 'First step' (No. 692691). A.J.H.acknowledges support from the European Research CouncilHorizon 2020 ERC Grant Agreement No. 678004 (Doping onDemand)., Physique-IEMN (PHYSIQUE-IEMN), Sub Condensed Matter and Interfaces, and Condensed Matter and Interfaces

Subjects
[PHYS]Physics [physics], Electron density, Electron mobility, Materials science, Terahertz radiation, business.industry, Carrier scattering, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Terahertz spectroscopy and technology, General Energy, Semiconductor, Nanocrystal, Monolayer, Optoelectronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Physical and Theoretical Chemistry, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

It has been shown recently that atomically coherent superstructures of a nanocrystal monolayer in thickness can be prepared by self-assembly of monodisperse PbSe nanocrystals, followed by oriented attachment. Superstructures with a honeycomb nanogeometry are of special interest, as theory has shown that they are regular 2-D semiconductors, but with the highest valence and lowest conduction bands being Dirac-type, that is, with a linear energy-momentum relation around the K-points in the zone. Experimental validation will require cryogenic measurements on single sheets of these nanocrystal monolayer superstructures. Here, we show that we can incorporate these fragile superstructures into a transistor device with electrolyte gating, control the electron density, and measure the electron transport characteristics at room temperature. The electron mobility is 1.5 ± 0.5 cm2 V-1 s-1, similar to the mobility observed with terahertz spectroscopy on freestanding superstructures. The terahertz spectroscopic data point to pronounced carrier scattering on crystallographic imperfections in the superstructure, explaining the limited mobility.

Published
2019

55. Bias Tunable Spectral Response of Nanocrystal Array in a Plasmonic Cavity

Author

Dang, Tung Huu, primary, Vasanelli, Angela, additional, Todorov, Yanko, additional, Sirtori, Carlo, additional, Prado, Yoann, additional, Chu, Audrey, additional, Gréboval, Charlie, additional, Khalili, Adrien, additional, Cruguel, Herve, additional, Delerue, Christophe, additional, Vincent, Gregory, additional, and Lhuillier, Emmanuel, additional

Published
2021
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56. The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption Strength of Bulk and Quantum-Confined Semiconductors

Author

Condensed Matter and Interfaces, Sub Inorganic Chemistry and Catalysis, Sub Condensed Matter and Interfaces, Prins, P. Tim, Alimoradi Jazi, Maryam, Killilea, Niall A., Evers, Wiel H., Geiregat, Pieter, Heiss, Wolfgang, Houtepen, Arjan J., Delerue, Christophe, Hens, Zeger, Vanmaekelbergh, Daniel, Condensed Matter and Interfaces, Sub Inorganic Chemistry and Catalysis, Sub Condensed Matter and Interfaces, Prins, P. Tim, Alimoradi Jazi, Maryam, Killilea, Niall A., Evers, Wiel H., Geiregat, Pieter, Heiss, Wolfgang, Houtepen, Arjan J., Delerue, Christophe, Hens, Zeger, and Vanmaekelbergh, Daniel

Published
2021

57. Electronic properties of atomically coherent square PbSe nanocrystal superlattice resolved by Scanning Tunneling Spectroscopy

Author

Sub Condensed Matter and Interfaces, Condensed Matter and Interfaces, Capiod, Pierre, Van Der Sluijs, Maaike, De Boer, Jeroen, Delerue, Christophe, Swart, Ingmar, Vanmaekelbergh, Daniel, Sub Condensed Matter and Interfaces, Condensed Matter and Interfaces, Capiod, Pierre, Van Der Sluijs, Maaike, De Boer, Jeroen, Delerue, Christophe, Swart, Ingmar, and Vanmaekelbergh, Daniel

Published
2021

58. Correlating Structure and Detection Properties in HgTe Nanocrystal Films

Author

Chee, Sang-Soo, primary, Gréboval, Charlie, additional, Magalhaes, Debora Vale, additional, Ramade, Julien, additional, Chu, Audrey, additional, Qu, Junling, additional, Rastogi, Prachi, additional, Khalili, Adrien, additional, Dang, Tung Huu, additional, Dabard, Corentin, additional, Prado, Yoann, additional, Patriarche, Gilles, additional, Chaste, Julien, additional, Rosticher, Michael, additional, Bals, Sara, additional, Delerue, Christophe, additional, and Lhuillier, Emmanuel, additional

Published
2021
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60. Quantized optical absorption in quasi-2D semiconductors: Theory, comparison with experiments and open questions

Author

Delerue, Christophe, Prins, P. Tim, Vanmaekelbergh, Daniel, Hens, Zeger, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Utrecht University [Utrecht], Universiteit Gent = Ghent University (UGENT), Physique-IEMN (PHYSIQUE-IEMN), and Universiteit Gent = Ghent University [Belgium] (UGENT)

Subjects
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2020

61. p Orbital Flat Band and Dirac Cone in the Electronic Honeycomb Lattice Article

Author

Gardenier, Thomas, van den Broeke, Jette, Moes, Jesper, Swart, Ingmar, Delerue, Christophe, Slot, Marlou, Smith, C, Vanmaekelbergh, Daniel, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Utrecht University [Utrecht], Physique - IEMN (PHYSIQUE - IEMN), Financial support from the Foundation for Fundamental Research on Matter (FOM, grants 16PR3245 and DDC13), which is part of The Netherlands Organization for Scientific Research (NWO), as well as the European Research Council (Horizon 2020 'FIRSTSTEP', 692691), and European Project: FIRST STEP

Subjects
Condensed Matter::Quantum Gases, [PHYS]Physics [physics], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Abstract

International audience; Theory anticipates that the in-plane p x , p y orbitals in a honeycomb lattice lead to potentially useful quantum electronic phases. So far, p orbital bands were only realized for cold atoms in optical lattices and for light and exciton-polaritons in photonic crystals. For electrons, in-plane p orbital physics is difficult to access since natural electronic honeycomb lattices, such as graphene and silicene, show strong s−p hybridization. Here, we report on electronic honeycomb lattices prepared on a Cu(111) surface in a scanning tunneling microscope that, by design, show (nearly) pure orbital bands, including the p orbital flat band and Dirac cone.

Published
2020

62. Bandes plates et cônes de Dirac dans des réseaux électroniques artificiels en nids d’abeilles

Author

Delerue, Christophe, Franchina Vergel, Nathali, Post, L. Christiaan, Tadjine, Athmane, Lambert, Yannick, Vaurette, Francois, Desplanque, Ludovic, Wallart, X., Stiévenard, Didier, Boneschanscher, M.P., Peters, J.L., Alimoradi Jazi, Maryam, Gardenier, Thomas, Van Den Broeke, Jette, Moes, J.R., Swart, Ingmar, Morais Smith, Cristiane, Grandidier, B., Vanmaekelbergh, Daniel, Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Institute for Theoretical Physics [Utrecht], and Renatech Network

Subjects
[SPI]Engineering Sciences [physics], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2020

63. P orbital flat band and dirac cone in the electronic honeycomb lattice

Author

Sub Condensed Matter and Interfaces, Sub Practicum, Sub Algemeen Natuurkunde, Condensed Matter and Interfaces, Gardenier, Thomas S., Van Den Broeke, Jette J., Moes, Jesper R., Swart, Ingmar, Delerue, Christophe, Slot, Marlou R., Smith, C. Morais, Vanmaekelbergh, Daniel, Sub Condensed Matter and Interfaces, Sub Practicum, Sub Algemeen Natuurkunde, Condensed Matter and Interfaces, Gardenier, Thomas S., Van Den Broeke, Jette J., Moes, Jesper R., Swart, Ingmar, Delerue, Christophe, Slot, Marlou R., Smith, C. Morais, and Vanmaekelbergh, Daniel

Published
2020

64. P orbital flat band and dirac cone in the electronic honeycomb lattice

Author

Condensed Matter and Interfaces, Sub Condensed Matter and Interfaces, Sub Practicum, Sub Algemeen Natuurkunde, Sub Cond-Matter Theory, Stat & Comp Phys, Gardenier, Thomas S., Van Den Broeke, Jette J., Moes, Jesper R., Swart, Ingmar, Delerue, Christophe, Slot, Marlou R., Smith, C. Morais, Vanmaekelbergh, Daniel, Condensed Matter and Interfaces, Sub Condensed Matter and Interfaces, Sub Practicum, Sub Algemeen Natuurkunde, Sub Cond-Matter Theory, Stat & Comp Phys, Gardenier, Thomas S., Van Den Broeke, Jette J., Moes, Jesper R., Swart, Ingmar, Delerue, Christophe, Slot, Marlou R., Smith, C. Morais, and Vanmaekelbergh, Daniel

Published
2020

65. Van Hove Singularities and Trap States in Two-Dimensional CdSe Nanoplatelets

Author

Peric, Nemanja, primary, Lambert, Yannick, additional, Singh, Shalini, additional, Khan, Ali Hossain, additional, Franchina Vergel, Nathali Alexandra, additional, Deresmes, Dominique, additional, Berthe, Maxime, additional, Hens, Zeger, additional, Moreels, Iwan, additional, Delerue, Christophe, additional, Grandidier, Bruno, additional, and Biadala, Louis, additional

Published
2021
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66. Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light–Matter Coupling

Author

Gréboval, Charlie, primary, Chu, Audrey, additional, Magalhaes, Debora Vale, additional, Ramade, Julien, additional, Qu, Junling, additional, Rastogi, Prachi, additional, Khalili, Adrien, additional, Chee, Sang-Soo, additional, Aubin, Hervé, additional, Vincent, Grégory, additional, Bals, Sara, additional, Delerue, Christophe, additional, and Lhuillier, Emmanuel, additional

Published
2021
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67. Engineering a Robust Flat Band in III–V Semiconductor Heterostructures

Author

Franchina Vergel, Nathali A., primary, Post, L. Christiaan, additional, Sciacca, Davide, additional, Berthe, Maxime, additional, Vaurette, François, additional, Lambert, Yannick, additional, Yarekha, Dmitri, additional, Troadec, David, additional, Coinon, Christophe, additional, Fleury, Guillaume, additional, Patriarche, Gilles, additional, Xu, Tao, additional, Desplanque, Ludovic, additional, Wallart, Xavier, additional, Vanmaekelbergh, Daniel, additional, Delerue, Christophe, additional, and Grandidier, Bruno, additional

Published
2020
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77. Optical absorptivity in superlattices of nanocrystals

Author

Delerue, Christophe, Alimoradi Jazi, Maryam, Prins, P. Tim, Houtepen, Arjan J., Heiss, Wolfgang, Killilea, Niall A., Evers, W.H., Geiregat, Pieter, Hens, Zeger, Vanmaekelbergh, Daniel, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Utrecht University [Utrecht], Delft University of Technology (TU Delft), Kavli Institute of Nanosciences [Delft] (KI-NANO), Inorganic and Physical Chemistry, Debye Institute for Nanomaterials Science, Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Universiteit Gent = Ghent University [Belgium] (UGENT)

Subjects
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

78. Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on p-type doped InP(001)

Author

Franchina Vergel, Nathali Alexandra, Tadjine, A., Notot, V., Mohr, M., Kouassi N’guissan, A., Coinon, Christophe, Berthe, Maxime, Biadala, Louis, Sossoe, K., Dzagli, M., Girard, J.-C., Rodary, Guillemin, Desplanque, L., Berndt, R., Stievenard, D., Wallart, X., Delerue, Christophe, Grandidier, B., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut für Experimentelle und Angewandte Physik [Kiel] (IEAP), Christian-Albrechts-Universität zu Kiel (CAU), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), ANR-16-CE24-0007,Dirac-III-V,Super-réseau d'antipoints de Dirac pour les électrons dans les semiconducteurs III-V(2016), ANR-17-CE24-0024,MechaSpin,Positionnement à l'échelle atomique et contrôle cohérent mécanique du spin d'un atome magnétique(2017), Physique - IEMN (PHYSIQUE - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN)

Subjects
[PHYS]Physics [physics], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Abstract

International audience; A steplike density of states is the hallmark of a two-dimensional electron gas. Here, scanning tunneling spectroscopy is used to investigate this property in the differential conductance of an In0.53Ga0.47As quantum well grown on p-type doped InP(001). We show that the appearance of a steplike function in the conduction band strongly depends on both the hole concentration in the quantum well and the current injected into the quantized states. Based on four-point probe transport measurements and tunneling-induced light-emission spectroscopy, we discuss the physical mechanisms at the origin of the current and unveil the significant contribution of midgap surface states in the relaxation of the tunneling electrons. These surface states, via pinning of the Fermi level, also affect the potential landscape across the quantum well, as demonstrated by tight-binding calculations of the quantum well electronic structure.

Published
2019

79. Metallic ZnO nanocrystals for Mid IR plasmonics

Author

Masenelli, Bruno, Taha, M.K.H., Boisron, Olivier, Mélinon, Patrice, Delerue, Christophe, Masenelli-Varlot, Karine, Sallet, V., INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Consortium Lyon Saint-Etienne de Microscopie (CLYM), École normale supérieure de Lyon (ENS de Lyon)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet - Saint-Étienne (UJM), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), ANR-15-CE09-0004,GaZON,Nanostructures de ZnO dopées Ga pour la plasmonique IR accordable(2015), ANR-15-CE09-004-GaZON, Univ. Cattolica del Sacro Cuore Brescia, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Physique-IEMN (PHYSIQUE-IEMN), École normale supérieure - Lyon (ENS Lyon)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet [Saint-Étienne] (UJM)

Subjects
degenerate semiconductor, ZnO, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Mid IR, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, plasmonics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; Plasmonics has achieved tremendous improvements over the recent decade in sensing (e.g. SERS). However, plasmonics based on noble metal electron gas allows enhancing electromagnetic fields only in the visible and near-IR range. Unfortunately, many molecules exhibit vibrational modes in the mid-IR. In order to enhance the coupling of Mid-IR light with molecular vibrations and thus to improve the sensitivity of IR absorption spectroscopy (the so-called SEIRA: surface enhanced IR absorption), it is necessary to design materials with tunable electron gas density. This is possible in degenerate semiconductors [1, 2]. Among these, oxides and most specifically ZnO are second to none. In the present paper, we address the issue of the design of Ga or Al doped ZnO nanocrystals for Mid-IR plasmonics. We first demonstrate the tunability of the local surface plasmon resonance (LSPR) of the nanocrystals upon Ga (or Al) concentration [3]. The nanocrystals are synthesized by a physical route, relying on the adiabatic supersonic expansion of a plasma. The resulting nanocrystal films are studied structurally by TEM, XDR, chemically by RBS and XPS and optically by FTIR and PhotoAcoustic FTIR. The effect of high doping level in ZnO nanocrystals is investigated and the solubility of Ga and Al in our process is determined. The LSPR of oxide nanocrystals is characterized by a large FWHM as can be seen on figure 1. This characteristic is related to several parameters. Among them, the role of the dopant location and activation is crucial. Consequently we examine both experimentally [4] and numerically [5] their influence on our nanocrystals. We show that the dopant activation can be greatly enhanced if the nanocrystals are synthesized in an O-poor environment. However, no further post-deposition treatment, such as annealing, as proven to be efficient to further improve the dopant activation. This questions the dopant stability in degenerate nanocrystals.Embedding the nanocrystals in a dielectric matrix (Al2O3) does not improve the activation of the dopants. However, it forbids the self-organization of the crystals (a process known as Oriented Attachment) and consequently leads to a reduced FWHM of the plasmon resonance. Eventually, the conditions to observe SEIRA effect will be discussed.

Published
2019

80. Non-linear optical properties of semiconductor nanocrystals

Author

Delerue, Christophe, Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

81. Theoretical investigation of the phonon-limited carrier mobility in (001) Si films.

Author

Jing Li, Lampin, Evelyne, Delerue, Christophe, and Niquet, Yann-Michel

Subjects
SILICON compounds, ELECTRONIC structure, PHONON scattering, BOLTZMANN'S equation, CARRIER density
Abstract

We calculate the phonon-limited carrier mobility in (001) Si films with a fully atomistic framework based on a tight-binding (TB) model for the electronic structure, a valence-force-field model for the phonons, and the Boltzmann transport equation. This framework reproduces the electron and phonon bands over the whole first Brillouin zone and accounts for all possible carrier-phonon scattering processes. It can also handle one-dimensional (wires) and threedimensional (bulk) structures and therefore provides a consistent description of the effects of dimensionality on the phonon-limited mobilities. We first discuss the dependence of the electron and hole mobilities on the film thickness and carrier density. The mobility tends to decrease with decreasing film thickness and increasing carrier density, as the structural and electric confinement enhances the electron-phonon interactions. We then compare hydrogen-passivated and oxidized films in order to understand the impact of surface passivation on the mobility and discuss the transition from nanowires to films and bulk. Finally, we compare the semiclassical TB mobilities with quantum Non-Equilibrium Green's Function calculations based on k . p band structures and on deformation potentials for the electron-phonon interactions (KP-NEGF). The TB mobilities show a stronger dependence on carrier density than the KPNEGF mobilities, yet weaker than the experimental data on Fully Depleted-Silicon-on-Insulator devices. We discuss the implications of these results on the nature of the apparent increase of the electron-phonon deformation potentials in silicon thin films. [ABSTRACT FROM AUTHOR]

Published
2016
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82. Room-Temperature Electron Transport in Self-Assembled Sheets of PbSe Nanocrystals with a Honeycomb Nanogeometry

Author

Sub Condensed Matter and Interfaces, Condensed Matter and Interfaces, Alimoradi Jazi, Maryam, Kulkarni, Aditya, Sinai, Sophia Buhbut, Peters, Joep L, Geschiere, Eva, Failla, Michele, Delerue, Christophe, Houtepen, Arjan J, Siebbeles, Laurens D A, Vanmaekelbergh, Daniel, Sub Condensed Matter and Interfaces, Condensed Matter and Interfaces, Alimoradi Jazi, Maryam, Kulkarni, Aditya, Sinai, Sophia Buhbut, Peters, Joep L, Geschiere, Eva, Failla, Michele, Delerue, Christophe, Houtepen, Arjan J, Siebbeles, Laurens D A, and Vanmaekelbergh, Daniel

Published
2019

83. Room-Temperature Electron Transport in Self-Assembled Sheets of PbSe Nanocrystals with a Honeycomb Nanogeometry

Author

Alimoradi Jazi, M. (author), Kulkarni, A. (author), Sinai, Sophia Buhbut (author), Peters, Joep L. (author), Geschiere, Eva (author), Failla, M. (author), Delerue, Christophe (author), Houtepen, A.J. (author), Siebbeles, L.D.A. (author), Vanmaekelbergh, Daniel (author), Alimoradi Jazi, M. (author), Kulkarni, A. (author), Sinai, Sophia Buhbut (author), Peters, Joep L. (author), Geschiere, Eva (author), Failla, M. (author), Delerue, Christophe (author), Houtepen, A.J. (author), Siebbeles, L.D.A. (author), and Vanmaekelbergh, Daniel (author)

Abstract

It has been shown recently that atomically coherent superstructures of a nanocrystal monolayer in thickness can be prepared by self-assembly of monodisperse PbSe nanocrystals, followed by oriented attachment. Superstructures with a honeycomb nanogeometry are of special interest, as theory has shown that they are regular 2-D semiconductors, but with the highest valence and lowest conduction bands being Dirac-type, that is, with a linear energy-momentum relation around the K-points in the zone. Experimental validation will require cryogenic measurements on single sheets of these nanocrystal monolayer superstructures. Here, we show that we can incorporate these fragile superstructures into a transistor device with electrolyte gating, control the electron density, and measure the electron transport characteristics at room temperature. The electron mobility is 1.5 ± 0.5 cm2 V-1 s-1, similar to the mobility observed with terahertz spectroscopy on freestanding superstructures. The terahertz spectroscopic data point to pronounced carrier scattering on crystallographic imperfections in the superstructure, explaining the limited mobility., ChemE/Opto-electronic Materials

Published
2019
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84. Theory of Optical Properties of 2D Semiconductor Nanocrystal Lattices

Author

Delerue, Christophe, Vanmaekelbergh, Daniel, Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Debye Institute for Nanomaterials Science, and Utrecht University [Utrecht]

Subjects
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

85. Ga and Al degeneratly doped ZnO Nanocrystals for Mid IR plasmonics

Author

Masenelli, Bruno, Taha, M.K.H., Boisron, Olivier, Canut, B., Melinon, Patrice, Delerue, Christophe, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ANR-15-CE-09-004-01 Gazon, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, and Physique-IEMN (PHYSIQUE-IEMN)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

86. Crystal facet engineering in MIR ZnO nanow

Author

Sallet, Vincent, Sartel, Corinne, Hassani, Said, Lusson, Alain, Amiri, G., Jomard, François, P, Galtier, Lefebvre, Isabelle, Delerue, Christophe, Masenelli, Bruno, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Physique - IEMN (PHYSIQUE - IEMN), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2018

87. LEGO® bricks at the nanoscale

Author

Delerue, Christophe, Tadjine, Athmane, Vanmaekelbergh, Daniel, Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

88. Crystal facet engineering in Ga-doped ZnO nanowires for MIR plasmonics

Author

Sallet, Vincent, Sartel, Corinne, Hassani, Said, Vilar, Christèle, Amiri, Gaelle, Lusson, Alain, Jomard, François, Galtier, Pierre, Lefebvre, Isabelle, Delerue, Christophe, Hamza, Mohamed, Canut, Bruno, Masenelli, Bruno, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Physique - IEMN (PHYSIQUE - IEMN), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
nanowires, surfactant, ZnO, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], doping, [CHIM.MATE]Chemical Sciences/Material chemistry, crystal facets, ComputingMilieux_MISCELLANEOUS, plasmonics
Abstract

International audience

Published
2018

89. Setting Carriers Free: Healing Faulty Interfaces Promotes Delocalization and Transport in Nanocrystal Solids

Author

Walravens, Willem, primary, Solano, Eduardo, additional, Geenen, Filip, additional, Dendooven, Jolien, additional, Gorobtsov, Oleg, additional, Tadjine, Athmane, additional, Mahmoud, Nayyera, additional, Ding, Patrick Peiwen, additional, Ruff, Jacob P. C., additional, Singer, Andrej, additional, Roelkens, Gunther, additional, Delerue, Christophe, additional, Detavernier, Christophe, additional, and Hens, Zeger, additional

Published
2019
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91. Doped Colloidal InAs Nanocrystals in the Single Ionized Dopant Limit

Author

Biaye, Moussa, primary, Amit, Yorai, additional, Gradkowski, Kamil, additional, Turek, Natalia, additional, Godey, Sylvie, additional, Makoudi, Younes, additional, Deresmes, Dominique, additional, Tadjine, Athmane, additional, Delerue, Christophe, additional, Banin, Uri, additional, and Mélin, Thierry, additional

Published
2019
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94. Trap-Free Heterostructure of PbS Nanoplatelets on InP(001) by Chemical Epitaxy

Author

Biadala, Louis, primary, Peng, Wenbing, additional, Lambert, Yannick, additional, Kim, Jin H., additional, Canneson, Damien, additional, Houppe, Anthony, additional, Berthe, Maxime, additional, Troadec, David, additional, Deresmes, Dominique, additional, Patriarche, Gilles, additional, Xu, Tao, additional, Pi, Xiaodong, additional, Wallart, Xavier, additional, Delerue, Christophe, additional, Bayer, Manfred, additional, Xu, Jimmy, additional, and Grandidier, Bruno, additional

Published
2019
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95. Ab initio study on the effect of structural relaxation on the electronic and optical properties of P-doped Si nanocrysta.

Author

Xiaodong Pi, Zhenyi Ni, Deren Yang, and Delerue, Christophe

Subjects
NANOCRYSTALS, SILICON, OPTICAL properties, ELECTRONS, LIGHT absorption, CHEMICAL relaxation
Abstract

In contrast to the conventional doping of bulk silicon (Si), the doping of Si nanocrystals (NCs) that are often smaller than 5 nm in diameter may lead to serious structural changes. Since the electronic and optical properties of Si NCs are intimately associated with their structures, it is critical to understand how doping impacts the structures of Si NCs. By means of ab initio calculation we now compare 1.4 nm phosphorus (P)-doped Si NCs without structural relaxation and those with structural relaxation. Structural changes induced by structural relaxation are manifested by the stretching and compressing of bonds and apparent variations in bond angles. With the increase of the concentration of P structural changes induced by structural relaxation become more serious. It is found that structural relaxation makes differences in the energy-level schemes of P-doped Si NCs. Structural relaxation also causes the binding energy of an electron in a P-doped Si NC to more significantly increase as the concentration of P increases. With the increase of the concentration of P structural relaxation leads to more pronounced changes in the optical absorption of P-doped Si NCs. [ABSTRACT FROM AUTHOR]

Published
2014
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96. Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals

Author

Spoor, F.C.M. (author), Grimaldi, G. (author), Delerue, Christophe (author), Evers, W.H. (author), Crisp, R.W. (author), Geiregat, P.A. (author), Hens, Zeger (author), Houtepen, A.J. (author), Siebbeles, L.D.A. (author), Spoor, F.C.M. (author), Grimaldi, G. (author), Delerue, Christophe (author), Evers, W.H. (author), Crisp, R.W. (author), Geiregat, P.A. (author), Hens, Zeger (author), Houtepen, A.J. (author), and Siebbeles, L.D.A. (author)

Abstract

Carrier multiplication is a process in which one absorbed photon excites two or more electrons. This is of great promise to increase the efficiency of photovoltaic devices. Until now, the factors that determine the onset energy of carrier multiplication have not been convincingly explained. We show experimentally that the onset of carrier multiplication in lead chalcogenide quantum confined and bulk crystals is due to asymmetric optical transitions. In such transitions most of the photon energy in excess of the band gap is given to either the hole or the electron. The results are confirmed and explained by theoretical tight-binding calculations of the competition between impact ionization and carrier cooling. These results are a large step forward in understanding carrier multiplication and allow for a screening of materials with an onset of carrier multiplication close to twice the band gap energy. Such materials are of great interest for development of highly efficient photovoltaic devices., ChemE/Opto-electronic Materials, Science Education and Communication, BN/Technici en Analisten

Published
2018
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97. Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots

Author

Geiregat, P.A. (author), Houtepen, A.J. (author), Sagar, Laxmi Kishore (author), Infante, Ivan (author), Zapata, Felipe (author), Grigel, Valeriia (author), Allan, Guy (author), Delerue, Christophe (author), Van Thourhout, Dries (author), Hens, Zeger (author), Geiregat, P.A. (author), Houtepen, A.J. (author), Sagar, Laxmi Kishore (author), Infante, Ivan (author), Zapata, Felipe (author), Grigel, Valeriia (author), Allan, Guy (author), Delerue, Christophe (author), Van Thourhout, Dries (author), and Hens, Zeger (author)

Abstract

Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can be attained only at high pump power and must compete with efficient multi-exciton recombination. Here, we show that mercury telluride (HgTe) QDs exhibit size-tunable stimulated emission throughout the near-infrared telecom window at thresholds unmatched by any QD studied before. We attribute this unique behaviour to surface-localized states in the bandgap that turn HgTe QDs into 4-level systems. The resulting long-lived population inversion induces amplified spontaneous emission under continuous-wave optical pumping at power levels compatible with solar irradiation and direct current electrical pumping. These results introduce an alternative approach for low-threshold QD-based gain media based on intentional trap states that paves the way for solution-processed infrared QD lasers and amplifiers., Accepted Author Manuscript, ChemE/Opto-electronic Materials

Published
2018
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98. Engineering a Robust Flat Band in III–V Semiconductor Heterostructures.

Author

Franchina Vergel, Nathali A., Post, L. Christiaan, Sciacca, Davide, Berthe, Maxime, Vaurette, François, Lambert, Yannick, Yarekha, Dmitri, Troadec, David, Coinon, Christophe, Fleury, Guillaume, Patriarche, Gilles, Xu, Tao, Desplanque, Ludovic, Wallart, Xavier, Vanmaekelbergh, Daniel, Delerue, Christophe, and Grandidier, Bruno

Published
2021
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99. Theory of Si nanocrystals (co)doped with P and B impurities

Author

Delerue, Christophe, Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

100. Electronic structure and optical properties of 2D nanostructured semiconductors

Author

Delerue, Christophe, Tadjine, Athmane, Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)

Subjects
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

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