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52. SOT-MRAM Based Analog in-Memory Computing for DNN Inference

54. Experimental observation of electron-phonon coupling enhancement in Sn nanowires caused by phonon confinement effects

56. Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

58. Experimental observation of electron-phonon coupling enhancement in Sn nanowires caused by phonon confinement effects

59. Deposition and patterning of magnetic atom trap lattices in FePt films with periods down to 200 nm

60. Scaled spintronic logic device based on domain wall motion in magnetically interconnected tunnel junctions

61. Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node

62. Impact of self-heating on reliability predictions in STT-MRAM

65. Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions

66. SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories

72. Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta vertical bar CoFe vertical bar MgO magnetic tunnel junctions : a first-principles study

73. Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks

76. Impact of processing and stack optimization on the reliability of perpendicular STT-MRAM

89. BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

90. Publisher’s Note: Interplay between lattice dynamics and superconductivity in Nb3Sn thin films [Phys. Rev. B88, 045437 (2013)]

92. Interplay between lattice dynamics and superconductivity in Nb3Sn thin films

97. Anisotropic lattice dynamics of FePtL10thin films

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