51. Conditional radiation tolerance of ferroelectric Hf0.5Zr0.5O2 thin film under 60Co gamma-ray irradiation.
- Author
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Namkung, Jin, Song, Myeong Seop, Lee, Kyu Cheol, Lee, Kyoungjun, Cho, Jung Woo, and Chae, Seung Chul
- Subjects
RADIATION tolerance ,FERROELECTRIC thin films ,THIN films ,IRRADIATION ,ELECTRIC fields - Abstract
We report the effect of
60 Co gamma-ray irradiation on the ferroelectric properties of metal–ferroelectric Hf0.5 Zr0.5 O2 –metal thin film structures. The pristine Hf0.5 Zr0.5 O2 films showed strong radiation tolerance against gamma-rays with stable remanant polarization values. When Hf0.5 Zr0.5 O2 films were exposed to electric field cycling, or "wake-up" process, prior to irradiation, however, their ferroelectricity demonstrated a clear degradation of remanant polarization and coercive voltage shift of the hysteresis curves. The analysis of ferroelectric switching dynamics revealed faster polarization switching with broadening of Lorentzian distribution of characteristic switching time for higher radiation doses, which is contrary to the wake-up behavior. The relationship between the wake-up process and gamma-ray irradiation on the stability of ferroelectric Hf0.5 Zr0.5 O2 films was discussed in light of domain alignment and defect mechanisms, considering both the redistribution and trapping of defect charges. [ABSTRACT FROM AUTHOR]- Published
- 2022
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