51. Interfacial Reaction between Aluminum Metal and Boron-Doped Polysilicon in a Planar Type Antifuse Device
- Author
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Chi Hoon Jun, Byung Tae Ahn, Jong Tae Baek, Youn Tae Kim, Jong Dae Kim, Yoon Ho Song, and Hyung Ho Park
- Subjects
Auger electron spectroscopy ,Materials science ,Annealing (metallurgy) ,Alloy ,General Engineering ,Analytical chemistry ,General Physics and Astronomy ,engineering.material ,X-ray photoelectron spectroscopy ,Electrode ,engineering ,Antifuse ,Grain boundary ,Composite material ,Diffractometer - Abstract
The interfacial reaction between Al metal and boron-doped polysilicon was investigated to understand the mechanism of link formation in the planar type antifuse with a polysilicon pad and two Al electrodes. In the antifuse, the Si–Al alloy filament with a low resistance was formed only on the boron-doped polysilicon pad, not on the phosphorus-doped or undoped polysilicon pads. After annealing Al/boron-doped polysilicon at 400°C for 20 min, an Al-B compound (AlB2) was found by the reaction between Al metal and solute borons at the grain boundaries of polysilicon using Auger electron spectroscopy, X-ray diffractometer, and X-ray photoelectron spectroscopy. In the planar type antifuse device, the formation of AlB2 at the grain boundaries might act as a seed for the conductive filament formation by supplying Al from the positive electrode. After forming a low resistance Si–Al alloy filament, it grows toward the negative electrode by the reaction between supplied Al and highly reactive solute borons segregated at the grain boundaries.
- Published
- 1998