51. Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models
- Author
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Chia-Hsien Hsu, J. Andrew Yeh, Chen Pin Hsu, Geng Yen Lee, Sheng Chun Hung, Yu-Lin Wang, Yuh-Chang Sun, Yu-Fen Huang, Fan Ren, Yen Wen Kang, Jen-Inn Chyi, Chihchen Chen, and You Ren Hsu
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Stereochemistry ,Transistor ,Human immunodeficiency virus (HIV) ,medicine.disease_cause ,Reverse transcriptase ,Dissociation (chemistry) ,law.invention ,Dissociation constant ,Drug development ,law ,medicine ,Biophysics ,Binding site ,High electron - Abstract
Human immunodeficiency virus (HIV) Reverse Transcriptase (RT)-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) and binding-site models were used to find out the dissociation constants of the HIV RT-inhibitor complex and the number of the binding sites on RT for the inhibitor, Efavirenz. One binding site on the RT for the inhibitor is predicted and the dissociation constant extracted from the binding-site model is 0.212 nM. The AlGaN/GaN HEMTs and the binding-site-models are demonstrated to be good tools to assist drug developments by elucidating the dissociation constants and the number of binding sites, which can largely reduce the cost and time for drug developments.
- Published
- 2013
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