51. Photovoltaic effects in BiFeO3.
- Author
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Yang, S. Y., Martin, L. W., Byrnes, S. J., Conry, T. E., Basu, S. R., Paran, D., Reichertz, L., Ihlefeld, J., Adamo, C., Melville, A., Chu, Y.-H., Yang, C.-H., Musfeldt, J. L., Schlom, D. G., Ager, J. W., and Ramesh, R.
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PHOTOVOLTAIC cells , *FERROELECTRIC thin films , *HETEROSTRUCTURES , *QUANTUM chemistry , *FERROELECTRIC devices , *POLARIZATION (Nuclear physics) - Abstract
We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8–0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3/tin doped indium oxide interface. [ABSTRACT FROM AUTHOR]
- Published
- 2009
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