465 results on '"Brunkov, P."'
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52. P-InAsSbP/n 0-InAs/n +-InAs photodiodes for operation at moderate cooling (150–220 K)
53. Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix
54. Optimization of carrier mobility in luminescence layers based on europium β-diketonates in hybrid light-emitting structures
55. Study of the electrical properties of individual (Ga,Mn)As nanowires
56. Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface
57. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
58. Single-layer graphene oxide films on a silicon surface
59. Characterization of defects in colloidal CdSe nanocrystals by the modified thermostimulated luminescence technique
60. Ultra-low density InAs quantum dots
61. Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope
62. Statistical analysis of AFM topographic images of self-assembled quantum dots
63. Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots
64. Formation of silver nanoparticles on the silicate glass surface after ion exchange
65. Integrated characterization of multilayer periodic systems with nanosized layers as applied to Mo/Si structures
66. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
67. Organic light-emitting diodes based on polyvinylcarbazole films doped with polymer nanoparticles
68. Self-assembled silver nanoislands formed on glass surface via out-diffusion for multiple usages in SERS applications
69. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
70. Electron states at electrolyte/n-GaN and electrolyte/n-InGaN interfaces
71. Surface electrostatic potential of inn epitaxial layers and its changes during anodic oxidization
72. Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices
73. Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds
74. Formation of composite InGaN/GaN/InAlN quantum dots
75. Capacitance-voltage characteristics of the electrolyte-n-InN surface and electron states at the interface
76. Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix
77. Indium-rich island structures formed by in-situ nanomasking technology
78. The short-wavelength edge of intrinsic photoluminescence in diluted GaN x As1 − x alloys
79. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers
80. Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix
81. Surface states on the n-InN-electrolyte interface
82. Submicron-resolved relief formation in poled glasses and glass-metal nanocomposites
83. Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix
84. Capacitance studies of multilayer ensembles of InAs QDs in a GaAs matrix
85. Influence of the sign of the zeta potential of nanodiamond particles on the morphology of graphene-detonation nanodiamond composites in the form of suspensions and aerogels
86. Higher harmonics in the current oscillations in weakly coupled GaAs/AlGaAs superlattices
87. Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz
88. An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures
89. Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters
90. A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide
91. Cylindrical multilayer metal–dielectric structures
92. Carrier density profile in weakly coupled GaAs/AlGaAs superlattices
93. Capacitance study of electron traps in low-temperature-grown GaAs
94. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors
95. On the synthesis of the carboxylated graphene via graphene oxide liquid-phase modification with alkaline solutions
96. Establishing the applicability of the laser diffraction technique for the graphene oxide platelets lateral size measurements
97. Modification of GaAs by medium-energy N2+ ions
98. Studying the formation of self-assembled (In,Mn)As quantum dots
99. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
100. Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters
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