51. 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes.
- Author
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Growden, Tyler A., Zhang, Weidong, Brown, Elliott R., Storm, David F., Hansen, Katurah, Fakhimi, Parastou, Meyer, David J., and Berger, Paul R.
- Subjects
QUANTUM tunneling ,DIODES ,FIELD-effect transistors ,POLARIZATION (Nuclear physics) ,EPITAXY - Abstract
We report on the design and fabrication of high current density GaN/AlN double barrier resonant tunneling diodes grown via plasma assisted molecular-beam epitaxy on bulk GaN substrates. A quantum-transport solver was used to model and optimize designs with high levels of doping and ultra-thin AlN barriers. The devices displayed repeatable room temperature negative differential resistance with peak-to-valley current ratios ranging from 1.20 to 1.60. A maximum peak tunneling current density (J
p ) of 431 kA/cm2 was observed. Cross-gap near-UV (370–385 nm) electroluminescence (EL) was observed above +6 V when holes, generated from a polarization induced Zener tunneling effect, recombine with electrons in the emitter region. Analysis of temperature dependent measurements, thermal resistance, and the measured EL spectra revealed the presence of severe self-heating effects. [ABSTRACT FROM AUTHOR]- Published
- 2018
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