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The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work, we show that this feature can instead be exploited to realize a scheme where spin transport is modulated at room temperature by a modest electric field. A field directed antiparallel (parallel) to the spin-diffusion velocity can, in fact, largely increase (decrease) the spin-transport length compared with the zero field case. We find that applying an electric field E = 24 V/cm along a 40 μm-long path in germanium results in about one order of magnitude modulation of the spin-polarized electrons entering into the detector. This work demonstrates that electric fields can be exploited for guiding spins over macroscopic distances and for realizing fast room temperature modulation of spin accumulation.

We propose to exploit the natural mechanical instability of thin solid films to form regular patterns of monocrystalline atomically smooth silicon and germanium nanostructures that cannot be realized with conventional methods. The solid-state dewetting dynamics is guided by pre-patterning the sample by a combination of electron-beam lithography and reactive-ion etching, obtaining precise control over number, size, shape, and relative position of the final Si1-xGex structures. Here we describe our progress in the spectroscopic investigation of individual dewetted Si1-xGex nanoislands: in the linear regime, bright Mie-type localized resonances are detected in the visible spectral range, with a spectral position that can be tuned by modifying the size of the nanoparticles. In the non-linear regime, instead, sizable third-harmonic generation is observed at the level of single islands. We believe that these results will be pivotal to a novel approach in spectral filtering, sensing and structural color with all-dielectric photonic devices.

Flexible and stretchable photonics are emerging fields aiming to develop novel applications where the devices need to conform to uneven surfaces or whenever lightness and reduced thickness are major requirements. However, owing to the relatively small refractive index of transparent soft matter, these materials are not well adapted for light management at visible and near-infrared frequencies. Here we demonstrate simple, low cost and efficient protocols for fabricating Si1−xGex-based, sub-micrometric dielectric antennas with ensuing hybrid integration into different plastic supports. The dielectric antennas are realized exploiting the natural instability of thin solid films to form regular patterns of monocrystalline atomically smooth silicon and germanium nanostructures. Efficient protocols for encapsulating them into flexible and transparent, organic supports are investigated and validated. We benchmark the optical quality of the antennas with light scattering measurements, demonstrating the control of the islands structural colour and the onset of sharp Mie modes after encapsulation.

Chemical weathering associated with dissolution/precipitation at interfaces between minerals and flowing fluids is key for the evolution of geologic systems, including groundwater contamination and storage capacity. Relying on Atomic Force Microscopy (AFM) yields reaction rates at nanoscale resolutions. Challenges limiting our ability to quantify heterogeneity associated with these processes include establishing reliable platforms allowing AFM imaging of real‐time and in situ absolute material fluxes across mineral surfaces under continuous flow conditions to complement typically acquired surface topography images. We provide an experimental workflow and heterogeneous absolute rates at the nanoscale across the surface of a calcite crystal under dissolution. These high‐quality experimental observations are then interpreted through a stochastic approach. The latter is geared to embed diverse kinetic modes driving the degree of spatial heterogeneity of the reaction and corresponding to different mechanistic processes documented across the crystal surface. Plain Language Summary: Quantification of basic processes underpinning precipitation/dissolution at mineral/fluid interfaces is key for realistic assessment of chemical weathering rates driving rock morphology, subsurface storage capacity and contamination. We provide direct observation of the complex mechanistic processes acting at nanoscales through an original experimental platform relying on Atomic Force Microscopy imaging to evaluate absolute material fluxes associated with dissolution of a mineral subject to reaction under continuous flow conditions. Dissolution is characterized at very high spatial resolutions (∼10 nm). This enables observing in real‐time and in situ mechanistic processes driving system evolution. The ensuing rich data set of absolute reaction rates displays a marked degree of spatial heterogeneity. The latter is then interpreted within a stochastic framework to yield a detailed mechanistic appraisal of mineral dissolution. Key Points: A platform to evaluate absolute nanoscale topographic measurements of a crystal sample subject to dissolution/precipitation is designedThe associated spatially heterogeneous fields of absolute material fluxes across the surface are evaluatedReaction rates are described through a stochastic framework encapsulating behaviors of surface features driving dissolution processes [ABSTRACT FROM AUTHOR]

Fabricating defect-free micro- and nano-circuits over large scales with controlled interconnections remains a challenge. Here, Bollani et al. show a dewetting strategy for engineering arrays of parallel Si-based nanowires up to 0.75 mm and complex interconnected circuits of monocrystalline Si on a chip.

Ultrashort Bessel beams have been used in this work to study the response of a 430-μm-thick monocrystalline sapphire sample to laser–matter interaction when injecting the beam orthogonally through the whole sample thickness. We show that with a 12° Bessel beam cone angle, we are able to internally modify the material and generate tailorable elongated microstructures while preventing the formation of surface cracks, even in the picosecond regime, contrary to what was previously reported in the literature. On the other hand, by means of Bessel beam machining combined with a trepanning technique where very high energy pulses are needed, we were able to generate 100 μm diameter through-holes, eventually with negligible cracks and very low taper angles thanks to an optimization achieved by using a 60-μm-thick layer of Kapton Polyimide removable tape.

For different applications in laser photonics and integrated optics, photorefractive materials are surely of great interest and play an important role in miniaturization of devices and fabrication of functional photonic structures such as gratings and waveguides. In this work, high photorefractivity of sol-gel derived SiO2-SnO2:Er3+ glass-ceramic planar waveguides, with negative effective refractive index change, is demonstrated. Through the photorefractivity investigation employing the UV pulsed KrF excimer laser (λ = 248 nm), the glass-ceramic planar waveguides show fast photorefractive response after a cumulative dose of only 0.3 kJ/cm2. A higher SnO2 content in the glass-ceramics leads to a greater change of saturated effective refractive index: Δneff = - (2.60 ± 0.20) x 10-3 at 1550 nm on the TE0 mode, for the 30 mol% SnO2 planar waveguides and Δneff = - (2.00 ± 0.20) x 10-3 on the 1550 nm TE0 mode, for the 20 mol% SnO2 ones. To investigate the structural modifications involved in the photorefractivity of the SiO2-SnO2:Er3+ glass-ceramics, XRD and Raman characterizations are employed. The grating fabrication by direct UV writing on the SiO2-SnO2:Er3+ glass-ceramic planar waveguide as well as an important reduction in the employed energy is demonstrated.

We describe how the ultrafast laser micromachining technique applied with different writing methods can be used for the creation of various building blocks essential for the realization of a photonic and optofluidic diamond platform. Waveguides, NV centers, conductive wires, microchannels and microholes can be obtained thanks to laser microfabrication with suitable pulse parameters, making use not only of standard Gaussian laser beams but also of non-diffracting Bessel beams, the latter especially in all those cases where single pass high aspect-ratio microstructures or ablated areas are needed.

Quantum Key Distribution allows two users to exchange secret keys and it is based on the transmission of single photons or attenuated laser pulses. Recently, sources based on multiple single-photon emitters were demonstrated to be suitable for QKD. Here, we present a CMOS compatible multiple single-photon emitters source realized on a SOI wafer by a standard silicon diode doped with erbium ions. Particular emphasis is placed on the fabrication of such a device enhancing the erbium electroluminescence signal by adopting a proper oxygen co-doping. Finally, electroluminescence characterization at room temperature of the device is presented.

Light‐emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy and has been mostly focused on light extraction and guiding. Here the control of the electronic states of carbon‐related impurities (G‐centers) is addressed via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV, and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized, and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected accounting for the lack of Purcell effect. This technique can be extended to other impurities and Si‐based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits. [ABSTRACT FROM AUTHOR]

Introduction: This study aimed at validating and providing Italian norms for the Single-Matrix Digit Cancellation Test (SMDCT), a cancellation task to screen for selective attention deficits, as well as providing clinical usability evidence for it in acute stroke patients. Methods: The SMDCT stimulus is a specular, 4-quadrant, horizontally oriented matrix, across which target distribution is homogeneous. Both accuracy (-A) and time (-T) outcomes were computed. N = 263 healthy participants (HPs) and N = 76 acute stroke patients were recruited. N = 108 HPs also underwent the Mini-Mental State Examination, Frontal Assessment Battery (FAB), and Trail-Making Test (TMT), while patients were further assessed by the Mental Performance in Acute Stroke (MEPS). Regression-based norms were derived (equivalent scores). Construct and factorial validity, as well as case-control discrimination, were tested. Results: The matrix was underpinned by a two-component structure reflecting left and right hits. The SMDCT-T and -A were associated with TMT and FAB scores, respectively. Education predicted the SMDCT-A/-T, whereas age predicted the SMDCT-T only. In patients, the SMDCT converged with the MEPS, also accurately discriminating them from HPs. An index of right-left difference differentiated right- from left-damaged patients. Conclusions: The SMDCT is a valid and normed screener for selective attention deficits, encompassing measures of both accuracy and time, whose adoption is encouraged in acute stroke patients. Relatedly, the horizontal disposition of its matrix does allow for the qualitative report of either leftward of rightward biases due to underlying visual or attentional-representational deficits in this population. [ABSTRACT FROM AUTHOR]

Full control of light polarization is one of the most sought‐after functionalities in nanophotonics since it allows the replacement of bulky optical components like wave retarders. Here, the study reports the theoretical and experimental demonstration of an ultra‐compact dual‐mode frequency selective polarization controller that leverages the topological features of symmetry protected quasi‐bound states in the continuum (q‐BICs) supported by a silicon‐based nanostructure. Thanks to q‐BIC resonances, arbitrarily polarized incoming light can be converted into linearly polarized light without resorting to the local phase tuning mechanisms that characterize optical metasurfaces. Moreover, the dual‐mode operating regime allows to select the transmitted polarization without modifying the device orientation, therefore overtaking the concept of the wire grid polarizer. The experimental findings show that the proposed meta‐polarizer possesses an extinction ratio of ≈40 dB for two linear cross‐polarization excitations. These results pave the way for a novel class of ultra‐compact devices that can be used to compensate unwanted birefringence in optical fibers or to control polarization in complex media environments. [ABSTRACT FROM AUTHOR]

We have investigated the electron spin diffusion length at room temperature in bulk n-doped germanium as a function of the doping concentration. To this purpose, we exploit a nonlocal spin injection/detection scheme where spins are optically injected at the direct gap of Ge and electrically detected by means of the inverse spin-Hall effect (ISHE). By optically generating a spin population in the conduction band of the semiconductor at different distances from the spin detector, we are able to directly determine the electron spin diffusion length Ls in the Ge substrate. We experimentally observe that Ls > 20 μm for lightly doped samples and, by taking into account the electron diffusion coefficient, we estimate electron spin lifetime values τs larger than 50 ns. In contrast, for heavily doped Ge substrates, the spin diffusion length decreases to a few micrometers, corresponding to τs ≈ 20 ns. These results can be exploited to refine spin transport models in germanium and reduce the experimental uncertainties associated with the evaluation of Ls from other spin injection/detection techniques.

High spatial frequency laser induced periodic surface structure (HSFL) morphology induced by femtosecond laser with 230 fs pulse duration, 250 kHz repetition rate at 1030 nm wavelength on CVD diamond surface is investigated and discussed. The spatial modification was characterized and analyzed by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and 2D-Fast Fourier Transform (2D-FFT). We studied the effect of pulse number and laser power on the spatial development of nanostructures, and also deduced the impact of thermal accumulation effect on their morphology. A generalized plasmonic model has been used to follow the optical evolution of the irradiated surface and to determine the periodic value of the nanostructures. We suggest that non-thermal melting and plasmonic excitation are the main processes responsible for the formation of HSFL-type nanostructures.

Micro-drilling transparent dielectric materials by using non-diffracting beams impinging orthogonally to the sample can be performed without scanning the beam position along the sample thickness. In this work, the laser micromachining process, based on the combination of picosecond pulsed Bessel beams with the trepanning technique, is applied to different transparent materials. We show the possibility to create through-apertures with diameter on the order of tens of micrometers, on dielectric samples with different thermal and mechanical characteristics as well as different thicknesses ranging from two hundred to five hundred micrometers. Advantages and drawbacks of the application of this technique to different materials such as glass, polymer, or diamond are highlighted by analyzing the features, the morphology, and the aspect-ratio of the through-holes generated. Alternative Bessel beam drilling configurations, and the possibility of optimization of the quality of the aperture at the output sample/air interface is also discussed in the case of glass.

Caesium lead halide perovskites were recently demonstrated to be a relevant class of semiconductors for photonics and optoelectronics. Unlike CsPbBr3 and CsPbI3, the realization of high-quality thin films of CsPbCl3, particularly interesting for highly efficient white LEDs when coupled to converting phosphors, is still a very demanding task. In this work we report the first successful deposition of nanocrystalline CsPbCl3 thin films (70–150 nm) by radio frequency magnetron sputtering on large-area substrates. We present a detailed investigation of the optical properties by high resolution photoluminescence (PL) spectroscopy, resolved in time and space in the range 10–300 K, providing quantitative information concerning carriers and excitons recombination dynamics. The PL is characterized by a limited inhomogeneous broadening (~15 meV at 10 K) and its origin is discussed from detailed analysis with investigations at the micro-scale. The samples, obtained without any post-growth treatment, show a homogeneous PL emission in spectrum and intensity on large sample areas (several cm2). Temperature dependent and time-resolved PL spectra elucidate the role of carrier trapping in determining the PL quenching up to room temperature. Our results open the route for the realization of large-area inorganic halide perovskite films for photonic and optoelectronic devices.

This work presents state of the art rare-earth activated SnO2 nanocrystals - based transparent glass-ceramics. With combined enhancements in both photorefractivity and rare-earth photoluminescence, the glass-ceramic has unique benefits as a lasing material. It exhibits high photorefractivity with UV induced refractive index modifications in the order of 10-3. Exploiting its high photorefractivity, optical gratings are fabricated on the glass-ceramic under an energy-efficient direct UV writing process. Furthermore, SnO2 semiconductor nanocrystals are also employed as efficient rare-earth sensitizers enhancing drastically the rare-earth photoluminescence.