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51. Advanced technologies for future materials and devices

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

52. NanoCMOS and Small Slope Switches for the end of the Roadmap

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), Ducroquet, Frédérique, and NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

53. Nanoelectronics roadmap for Europe:Identification and dissemination

Author

Sangiogi, E., Balestra, Francis, University of Bologna, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
stomatognathic diseases, health care facilities, manpower, and services, education, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, health care economics and organizations
Abstract

oral; International audience

Published
2018

54. Innovative Materials for Nanoscale MOSFETs and Small Slope Switches

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

58. Precise Extraction of Charge Carrier Mobility for Organic Transistors

Author

Xu, Yong, primary, Li, Yun, additional, Li, Songlin, additional, Balestra, Francis, additional, Ghibaudo, Gerard, additional, Li, Wenwu, additional, Lin, Yen‐Fu, additional, Sun, Huabin, additional, Wan, Jing, additional, Wang, Xinran, additional, Guo, Yufeng, additional, Shi, Yi, additional, and Noh, Yong‐Young, additional

Published
2019
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60. Beyond CMOS-Devices and Future of Nanoelectronics

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

61. Ultimate CMOS and Beyond-CMOS for the End of the Nanoelectronic Roadmap

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

Forum 4: Nanoelectronic and Nanosystems: session 404: Nanosystems and Nano-devices; International audience

Published
2017

62. Novel Materials for Low-Power and High-Performance Nanoscale FETs

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

63. Joule's law for organic transistors exploration: Case of contact resistance.

Author

Xu, Yong, Liu, Chuan, Li, Yun, Minari, Takeo, Darmawan, Peter, Balestra, Francis, Ghibaudo, Gerard, and Tsukagoshi, Kazuhito

Subjects
RESISTANCE heating, ORGANIC field-effect transistors, ELECTRIC conductivity, ELECTRIC fields, CONTACT resistance (Materials science), ANISOTROPY, CHARGE transfer
Abstract

Joule's law opens a straightforward way to explore the operating mechanism of organic field-effect transistors, from the angle of inner transported heating. The microscopic dissipated power is calculated from the local conductivity and electric field, which solves the widespread difficulties in building a macroscopic model to determine the contact resistance. The result quantitatively discloses the correlation between the contact resistance and the charge transport properties covering energetic disorder, band-like and hopping transport as well as carrier mobility anisotropy. It turns out that in a staggered configuration with ideal Ohmic contact, the contact resistance is highly affected by the charge transport. [ABSTRACT FROM AUTHOR]

Published
2013
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64. Precise Extraction of Charge Carrier Mobility for Organic Transistors.

Author

Xu, Yong, Li, Yun, Li, Songlin, Balestra, Francis, Ghibaudo, Gerard, Li, Wenwu, Lin, Yen‐Fu, Sun, Huabin, Wan, Jing, Wang, Xinran, Guo, Yufeng, Shi, Yi, and Noh, Yong‐Young

Subjects
CHARGE carrier mobility, TRANSISTORS, ORGANIC field-effect transistors, THRESHOLD voltage
Abstract

Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research. [ABSTRACT FROM AUTHOR]

Published
2020
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69. Carrier mobility in organic field-effect transistors.

Author

Xu, Yong, Benwadih, Mohamed, Gwoziecki, Romain, Coppard, Romain, Minari, Takeo, Liu, Chuan, Tsukagoshi, Kazuhito, Chroboczek, Jan, Balestra, Francis, and Ghibaudo, Gerard

Subjects
ORGANIC field-effect transistors, SEMICONDUCTORS, SEPARATION (Technology), SOLUTION (Chemistry), PENTACENE
Abstract

A study of carrier transport in top-gate and bottom-contact TIPS-pentacene organic field-effect transistors (OFETs) based on mobility is presented. Among three mobilities extracted by different methods, the low-field mobility obtained by the Y function exhibits the best reliability and ease for use, whereas the widely applied field-effect mobility is not reliable, particularly in short-channel transistors and at low temperatures. A detailed study of contact transport reveals its strong impact on short-channel transistors, suggesting that a more intrinsic transport analysis is better implemented in relatively longer-channel devices. The observed temperature dependences of mobility are well explained by a transport model with Gaussian-like diffusivity band tails, different from diffusion in localized states band tails. This model explicitly interprets the non-zero constant mobility at low temperatures and clearly demonstrates the effects of disorder and hopping transport on temperature and carrier density dependences of mobility in organic transistors. [ABSTRACT FROM AUTHOR]

Published
2011
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70. Modeling of static electrical properties in organic field-effect transistors.

Author

Xu, Yong, Minari, Takeo, Tsukagoshi, Kazuhito, Gwoziecki, Romain, Coppard, Romain, Benwadih, Mohamed, Chroboczek, Jan, Balestra, Francis, and Ghibaudo, Gerard

Subjects
ORGANIC field-effect transistors, POISSON'S equation, ORGANIC semiconductors, PENTACENE, METALLIC films
Abstract

A modeling of organic field-effect transistors' (OFETs') electrical characteristics is presented. This model is based on a one-dimensional (1-D) Poisson's equation solution that solves the potential profile in the organic semiconducting film. Most importantly, it demonstrates that, due to the common open-surface configuration used in organic transistors, the conduction occurs in the film volume below threshold. This is because the potential at the free surface is not fixed to zero but rather rises also with the gate bias. The tail of carrier concentration at the free surface is therefore significantly modulated by the gate bias, which partially explains the gate-voltage dependent contact resistance. At the same time in the so-called subthreshold region, we observe a clear charge trapping from the difference between C-V and I-V measurements; hence a traps study by numerical simulation is also performed. By combining the analytical modeling and the traps analysis, the questions on the C-V and I-V characteristics are answered. Finally, the combined results obtained with traps fit well the experimental data in both pentacene and bis(triisopropylsilylethynyl)-pentacene OFETs. [ABSTRACT FROM AUTHOR]

Published
2011
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71. Challenges and Solutions for High Performance Nanoscale Devices Combined with Nanomaterials

Author

Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

Module 1: Smart Nanomaterials: T105: Nanodevices and NanoSystems; International audience

Published
2017

72. NanoCMOS and Tunnel FETs for the end of the Roadmap

Author

Balestra, Francis, Ducroquet, Frédérique, NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID, Silicon-based Nanodevices - SINANO - 26139 - OLD, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), and European Project: 26139,SINANO

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

73. Tunnel FETs trends and challenges

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), F. Balestra and Anda Mocuta, Sinano Summer School 2016, European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), Ducroquet, Frédérique, and NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

74. Innovative Nanodevices for the end of the Roadmap: Ultimate scaling and performance

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

75. New materials and Innovative Architectures for Ultimate Nanoelectronic Devices

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), Ducroquet, Frédérique, and NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

81. Nanowires: Nanowires for Very-Low-Power Integrated Circuits and New Functionalities

Author

Balestra, Francis, Östling, Mikael, Hellström, Per-Erik, E., Sangiorgi, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Royal Institute of Technology in Stockholm (KTH), Advanced Research Center on Electronic System [Bologna], University of Bologna, Ed. by Boris Ildusovich Kharisov, Oxana Vasilievna Kharissova, and Ubaldo Ortiz-Mendez

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; We are today facing a severe power consumption crisis, due to many factors: increase of worldwide energy consumption (by 40% in the last 20 years), cost of energy, climate warming, pollution, and restricted energy reserve. In this global scenario, electronics/information and communication technologies (ICT) is becoming a major player because a signicant part of the energy consumption (15% of electricity consumption today; but it is estimated to increase threefold in the next 20 years) is related to ICT systems. In addition, the battery lifetimes are not sufcient for the increasing needs of new mobile devices, and we need to develop future autonomous ultra-low-power (ULP) systems.

Published
2015
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82. Emerging Steep Switch Devices & CMOS Technologies for ultra low power operation

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Future and Emerging Technologies projects MULTI and TOLOP, and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

83. Oxide Stress Separation technique for the assessment of Inter-Gate Dielectric integrity in 40 nm Flash memory cells

Author

Dobri, Adam, Jeannot, Simon, Piazza, Fausto, Jahan, Carine, Coignus, Jean, Perniola, Luca, Balestra, Francis, STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), IEEE, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMethodologies_GENERAL, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

session poster; International audience

Published
2015

84. Nanowires for ultimate CMOS and small slope switches

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), European Project: 26139,SINANO, Ducroquet, Frédérique, Silicon-based Nanodevices - SINANO - 26139 - OLD, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

85. Challenges to ultra-low-power operation

Author

Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMethodologies_GENERAL, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

session poster; International audience

Published
2015

86. Multi-Gate Devices, Nanowires and Small Slope Switches for very Low Energy consumption and new functionalities

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

87. Alternative materials and beyond-CMOS FETs for very low power operation

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), CMNE, and Ducroquet, Frédérique

Subjects
ISBN-10: 192750046XISBN-13: 978-1927500460, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

88. Small slope switching

Author

M. Ionescu, Adrian, Balestra, Francis, Boucart, Kathy, Salvatore, Giovanni, Rusu, Alexandru, Ecole Polytechnique Fédérale de Lausanne (EPFL), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), F. Balestra, and European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

chap 1; International audience; Power dissipation in switching devices is considered today as the most important roadblock for future nanoelectronic circuits and systems. The complementary metal‐oxide‐semiconductor (CMOS) power consumption consists of two contributions: the dynamic and the static leakage components. The tunnel metal‐oxide‐semiconductor field‐effect transistor (MOSFET) offers an appealing concept for a substantial lowering of the energy dissipated in a switching device by replacing the thermionic emission of charge carriers over a barrier to enter the MOSFET channel with a tunneling process. If the tunneling process is made sufficiently effective, tunnel FETs can ultimately yield an effective cooling of the injecting source contact through a band‐pass filter action that enables steep inverse subthreshold slopes over many orders of magnitude, thus providing low values of the average subthreshold swing. This chapter focuses on the characteristics of metal‐ferroelectric‐MOS structures recently reported by EPFL group based on a complete set of experiments exploiting the internal metal contact.

Published
2014
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89. Beyond CMOS Nanodevices 1

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), M.Mouis, European Project: 257375,EC:FP7:ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
Hardware_MEMORYSTRUCTURES, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Hardware_LOGICDESIGN
Abstract

International audience; This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

Published
2014
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90. Beyond CMOS Nanodevices 2

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), M. Mouis, European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
Hardware_MEMORYSTRUCTURES, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Hardware_LOGICDESIGN
Abstract

International audience; This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

Published
2014
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91. Ultra low power device operation

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

93. (Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities

Author

Gaben, Loïc, primary, Barraud, Sylvain, additional, Samson, Marie-Pierre, additional, Jaud, Marie-Anne, additional, Martinie, Sébastien, additional, Rozeau, Olivier, additional, Lacord, Joris, additional, Arvet, Christian, additional, Vizioz, Christian, additional, Bustos, Jessy, additional, Dallery, Jacques-Alexandre, additional, Pauliac, Sébastien, additional, Balan, Viorel, additional, Euvrard-Colnat, Catherine, additional, Perrot, Cédric, additional, Loup, Virginie, additional, Besson, Pascal, additional, Hartmann, Jean-Michel, additional, Monfray, Stéphane, additional, Boeuf, Frédéric, additional, Skotnicki, Thomas, additional, Balestra, Francis, additional, and Vinet, Maud, additional

Published
2016
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94. European structuring, roadmaping and networking

Author

Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), e2-Switch, ESSDERC 2014, and A. M. Ionescu

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

95. Fully-depleted SOI MOSFETs, Multi-Gate Devices, Nanowires and Small Slope Switches for very low power operation

Author

Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

98. Modeling tools for the capacitance-voltage and current-voltage characteristics of advanced gate stacks comparison between different approache

Author

Barin, N., Palestri, P., Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), and Domenget, Chahla

Subjects
[PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2006

99. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Author

UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Nazarov, Alexei, Balestra, Francis, Kilchytska, Valeriya, Flandre, Denis, UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Nazarov, Alexei, Balestra, Francis, Kilchytska, Valeriya, and Flandre, Denis

Abstract

This book is devoted to fast the evolving field of modern material science and nanoelectronics, and more particularly to physics and technology of functional nanomaterials and devices. The book focuses on nanodevices for electronics, sensors, and energy harvesting, considering as main device structure—the semiconductor-on-insulator (SemOI) one. The book reports the recent achievements in this field from leading companies and universities in Europe, Russia, and Ukraine. It is articulated around four main topics: (1) Nanoscale CMOS materials and devices; (2) Beyond CMOS materials, devices and their diagnostics; (3) New functional nanomaterials and nanoscaled devices for energy harvesting, light emission, optoelectronics and THz range: (4) NanoSensors and MEMS/NEMS. Part I is focused on new SemOI materials for More Moore and More-than-Moore applications. Ultrathin silicon SOI structures are necessary for production of fully depleted SOI devices of the 22 nm technology node and beyond. The materials innovation for RF electronics, Si-based photonics, and 3D integration are presented. Device solutions for very low-energy computing, high-performed tunnel FETs, 3D nanowire RAM cells, and mechanical flexible CMOS devices on plastics are described. Part II of the Book deals with the physics of novel ‘‘beyond CMOS’’ devices such as IR memory cells on basis of Si/Ge nanoheterostructures, nonvolatile memory based on graphene on ferroelectric substrate, Si spintronic devices and the AFM diagnostics for different functional nanostructurated material and devices. In Part III, we focus on functional nanomaterials and structures regarding self-powered systems, solar energy harvesting structures, and THz electronics. Also nanocomposite dielectric materials for light-emitting materials and other optoelectronics applications are also discussed. Part IV considers the application of SemOI nanowire structures for radiation sensors, biosensors, chemical sensors, and MEMS. The use of SemOI s

Published
2014

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