51. Enhancement of IC tray's surface conductivity using accelerator technology
- Author
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J.H. Ha, B.H. Choi, J.S. Lee, J.H. Lee, and J.K. Kil
- Subjects
Surface conductivity ,Materials science ,Ion implantation ,Ion beam deposition ,Ion beam ,Ion beam mixing ,Analytical chemistry ,Accelerators and Storage Rings ,Fluence ,Ion source ,Ion - Abstract
We designed and manufactured a high current ion source for ion beam applications. As an industrial application, we studied the relation between bombarding nitrogen fluence and surface resistivity on MPPO (modified polyphenylene oxide) material, which is used for the IC tray, using the high current ion implantation technology. During the transportation, electrical charge is induced on the tray surface and it generates an electrical shock into the IC chip. To prevent such damage, we developed an implantation process for IC tray surface modification, which was carried out at an accelerating energy of 50 keV and an ion beam current of 50 mA. The surface resistivity of the MPPO IC tray that is normally insulating was decreased in the range of 10/sup 12/ to 10/sup 6/ /spl Omega//sq by increasing the total dose from 7/spl times/10/sup 14/ ions/cm/sup 2/ to 8/spl times/10/sup 16/ ions/cm/sup 2/.
- Published
- 2002
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