Author: "Alexandre Boulle" - Searchworks@Jio Institute Digital Library Search Results

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131 results on '"Alexandre Boulle"'

51. From amorphous phase separations to nanostructured materials in sol–gel derived ZrO2:Eu3+/SiO2 and ZnO/SiO2 composites

Author: Bernard Soulestin, André Lecomte, A. Gaudon, Alexandre Boulle, René Guinebretière, A. Dauger, François Lallet, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM)
Subjects: Materials science, Annealing (metallurgy), Nanoparticle, 02 engineering and technology, 01 natural sciences, Nanocomposites, 0103 physical sciences, Sol-gels, Materials Chemistry, Cubic zirconia, Composite material, Sol-gel, 010302 applied physics, Nanocomposite, Silicates, Silica, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Nanocrystals, X-ray diffraction, Electronic, Optical and Magnetic Materials, Amorphous solid, Nanocrystal, Transmission electron microscopy, Ceramics and Composites, 0210 nano-technology
Abstract: ZrO 2 :Eu 3+ –SiO 2 and ZnO–SiO 2 composites have been synthesized by a sol–gel method by using a specific gelation and drying procedure. In the two cases we were able to produce large and transparent monolithic samples. Microstructural properties of these materials were investigated by thermo-differential and thermo-gravimetric analysis, X-ray diffraction, transmission electron microscopy and small angle X-ray scattering. The existence of a miscibility gap in both systems results in the formation of nanocomposites where crystallized zirconia or amorphous zinc oxide nanoparticles are dispersed in a silica glass matrix. These two kinds of nanocomposites are potential high efficiency luminescent materials because the nanoparticles size is easily controlled by the annealing conditions.
Published: 2006
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52. Morphological instabilities of a thin film on a Penrose lattice: A Monte Carlo study

Author: Nathalie Olivi-Tran, A. Dauger, A. Gaudon, Alexandre Boulle, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM)
Subjects: Physics, Condensed Matter - Materials Science, Computer simulation, Condensed matter physics, Geometrical frustration, Monte Carlo method, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Condensed Matter::Materials Science, Lattice (order), 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Heptagon, Crystallite, Thermal relaxation, Thin film, 010306 general physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: We computed by a Monte Carlo method the thermal relaxation of a polycrystalline thin film deposited on a Penrose lattice. The thin film was modelled by a 2 dimensional array of elementary domains, which have each a given height. During the Monte Carlo process, the height of each of these elementary domains is allowed to change as well as their crystallographic orientation. After equilibrium is reached at a given numerical temperature, all elementary domains have changed their orientation into the same one and small islands appear, preferentially on the domains of the Penrose lattice located in the center of heptagons. This method is a new numerical approach to study the influence of the substrate and its defects on the islanding process of polycrystalline films., Comment: 9 pages,5 figures
Published: 2006
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53. Instrumental aspects in X-ray diffraction on polycrystalline materials

Author: A. Dauger, Olivier Masson, Alexandre Boulle, and René Guinebretière
Subjects: Diffraction, Radiation, Materials science, business.industry, Resolution (electron density), Condensed Matter Physics, Crystal, Optics, X-ray crystallography, General Materials Science, Acquisition time, Crystallite, business, Instrumentation, Diffractometer
Abstract: The purpose of this paper is to give a rapid overview of the recent developments in the field of X-ray diffraction on polycrystalline materials from the viewpoint of the instruments. After a brief historical report, the main types of laboratory diffractometers are presented. At the end of the twentieth century the apparition of position sensitive detectors and artificial crystal monochromators have induced the conception of new diffractometer often based on old geometrical arrangements. Those modern diffractometers are described with respect to the more conventional ones. Among the experimental parameters which can characterize a given diffractometer, the instrumental resolution function and the acquisition time of the pattern are of primary importance. The different apparatus are compared with respect to those two parameters.
Published: 2005
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54. Phenomenological analysis of heterogeneous strain fields in epitaxial thin films using x-ray scattering

Author: Alexandre Boulle, René Guinebretière, and A. Dauger
Subjects: Diffraction, Materials science, Acoustics and Ultrasonics, Field (physics), Condensed matter physics, Scattering, business.industry, Bragg's law, Bragg peak, Condensed Matter Physics, Power law, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Correlation function (statistical mechanics), Optics, Phenomenological model, business
Abstract: A model that allows the quantitative analysis of heterogeneous strain fields in epitaxial thin films using x-ray diffraction (XRD) is presented. Particular emphasis is laid on the modelling of the two-component XRD profiles (i.e. profiles made of the superposition of a narrow coherent Bragg peak and a broad diffuse scattering profile) encountered in the XRD investigation of epitaxial thin films containing localized strain fields. The spatial properties of the strain field are included in a correlation function based on phenomenological parameters such as the defect correlation length ξ and the level of disorder σ∞. No assumption regarding the nature of the defect is hence required. The statistical properties of the strain field are described by means of Levy-stable distributions which allow us to account for profile shapes ranging between the Gaussian and profiles exhibiting pronounced power law-type tails, as well as for asymmetrical profiles. The effects of finite size of the domains (crystallites) over which diffraction is coherent are rigorously taken into account by calculating the auto-correlation function of the crystallite shape including the size distribution effects. The effects of each parameter are presented and discussed in detail and the applicability of the model is illustrated with two examples.
Published: 2005
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55. Control of the morphology of oxide nano-islands through the substrate miscut angle

Author: A. Dauger, Romain Bachelet, Alexandre Boulle, René Guinebretière, and G. Nahelou
Subjects: Materials science, business.industry, Substrate (electronics), Thermal treatment, Condensed Matter Physics, Epitaxy, Crystallography, Reciprocal lattice, Sapphire, Optoelectronics, General Materials Science, Wafer, Physical and Theoretical Chemistry, Thin film, business, Yttria-stabilized zirconia
Abstract: An experimental method is presented that allows to control the morphology of solegel grown epitaxial thin films. Thin films of yttria stabilized zirconia (YSZ) have been grown on two c-cut sapphire substrates by solegel dip-coating and epitaxial nano-islands have been formed by high temperature thermal treatment. Atomic force microscopy observations and X-ray diffraction reciprocal space mapping were used to investigate the effects of a step-like structure of the wafer surface on the morphology and on the out-of-plane orientation of epitaxial nano-islands. In all cases investigated the (002) planes of YSZ remained parallel to the (0001) planes of sapphire, but tilted by an amount depending on both the out-of-plane lattice mismatch and miscut angle. 2005 Elsevier Ltd. All rights reserved.
Published: 2005
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56. Étude de la microstructure de couches minces par diffraction des rayons X : description analytique des profils de raie

Author: René Guinebretière, Alexandre Boulle, and A. Dauger
Subjects: Physics, General Physics and Astronomy, Physical chemistry, Kinematic theory
Abstract: Nous proposons un modele cinematique permettant de decrire de facon analytique les profils de raie de diffraction des rayons X de couches minces epitaxiees. Compare aux modeles analytiques existant, celui-ci permet de prendre en compte plusieurs types de defauts simultanement, notamment la rugosite du substrat, celle de la surface de la couche, et les fluctuations aleatoires (cumulatives ou non) de distance interreticulaire. Cette description peut s'appliquer aux cas de couches minces nanometriques (de quelques dizaines de nanometres a quelques centaines de nanometres) ainsi qu'aux couches ultra-minces (quelques Angstroms). Les profils de raie sont affectes differemment selon la nature des defauts presents, ce qui permet d'envisager l'application de ce modele pour la determination quantitative des proprietes microstructurales des couches de facon simple et routiniere.
Published: 2004
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57. Growth and relaxation of (Zr,Y)O2 epitaxial layers analyzed by XRD reciprocal space mapping

Author: Romain Bachelet, Alexandre Boulle, Olivier Masson, André Lecomte, René Guinebretière, and A. Dauger
Subjects: Diffraction, Materials science, Mechanical Engineering, Relaxation (NMR), Condensed Matter Physics, Epitaxy, Reciprocal lattice, Crystallography, Mechanics of Materials, General Materials Science, Cubic zirconia, Nanometre, Crystallite, Composite material, Tetragonal zirconia
Abstract: Very thin polycrystalline and epitaxial yttria doped zirconia films have been realized using sol–gel processing. The lattice mismatch between the sapphire substrate and the zirconia crystals induces high misfit strain that we have determined using X-ray diffraction. Epitaxial films made of islands with sizes of several tens of nanometers are under very high stresses which are relaxed by the appearance of structural defects into the cubic zirconia crystals or by structural phase transition from the cubic to tetragonal zirconia form.
Published: 2004
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58. Strain profiles in yttria stabilized zirconia epitaxial thin films determined by high-resolution X-ray diffraction

Author: A. Dauger, Alexandre Boulle, Olivier Masson, and René Guinebretière
Subjects: Diffraction, Materials science, Metals and Alloys, Analytical chemistry, Surfaces and Interfaces, Microstructure, Epitaxy, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Crystallography, X-ray crystallography, Materials Chemistry, Stress relaxation, Sapphire, Thin film, Yttria-stabilized zirconia
Abstract: Epitaxial thin films of yttria stabilized zirconia (YSZ) have been grown onto (1120) cut sapphire (Al 2 O 3 ) substrates by sol–gel processing. The high crystallographic dissimilarity between YSZ and sapphire causes extremely high strains to build up at the interface. The microstructure of the samples has been investigated by high resolution X-ray diffraction using both a laboratory set-up and synchrotron radiation (ESRF, Grenoble). The strain profile across the film thickness has been recovered using a newly developed method that avoids assumptions regarding the shape of the strain profile.
Published: 2004
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59. A new method for the determination of strain profiles in epitaxic thin films using X-ray diffraction

Author: Alexandre Boulle, René Guinebretière, Olivier Masson, and A. Dauger
Subjects: Diffraction, Materials science, business.industry, Curvature, Molecular physics, General Biochemistry, Genetics and Molecular Biology, Spline (mathematics), Optics, Lattice (order), X-ray crystallography, Sapphire, Cubic zirconia, Thin film, business
Abstract: A new and versatile method is proposed for the determination of strain profiles in epitaxic thin films. It is based on the simulation of the X-ray diffraction (XRD) profiles using cubic B-spline functions to model the vertical lattice displacement profile. The lattice displacement profile, and consequently the strain profile, directly results from a least-square fit of the model to the experimental XRD profiles. Noa prioriassumption is made regarding the shape of the strain profile. Moreover, as spline functions are used, the recovered lattice displacement profile is smooth and exhibits a minimum curvature, thus avoiding oscillating or saw-toothed unphysical solutions. The potential of this method is illustrated with (100) yttria-stabilized zirconia epitaxic thin films deposited onto (11\bar{2}0) sapphire substrates by sol–gel processing.
Published: 2003
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60. X-Ray diffraction from epitaxial oxide layers grown from sol–gel

Author: René Guinebretière, Olivier Masson, Alexandre Boulle, and A. Dauger
Subjects: Diffraction, Materials science, Metals and Alloys, Analytical chemistry, Surfaces and Interfaces, Epitaxy, Microstructure, Mosaicity, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Crystallography, Reciprocal lattice, X-ray crystallography, Materials Chemistry, Yttria-stabilized zirconia, Sol-gel
Abstract: A methodology is proposed for microstructural characterization of sol–gel derived epitaxial layers. Yttria stabilized zirconia deposited on (1120) cut sapphire wafer is chosen as a representative example of an epitaxial layer fabricated by sol–gel processing. High quality X-ray diffraction data has been obtained with a homemade set-up that allows to record reciprocal space maps in a small amount of time. The diffraction profiles are modeled within the kinematical theory of X-ray diffraction on the basis of microstructural parameters. The analysis of the diffraction profiles along the q z direction yields the average film thickness (41 nm), the thickness distribution (5 nm) as well as the vertical strain profile. A 0.2° mosaicity is found from line shape analysis of the diffraction profile along the q x direction using two orders of reflection of the same crystallographic plane family.
Published: 2003
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61. Structural Characterization Using X-ray Diffraction of Ti Indiffused Periodically Poled LiNbO3 Fabricated by Direct Electron Beam Bombardment

Author: C. Restoin, A. Dauger, Alexandre Boulle, C. Darraud-Taupiac, and R. Guinebretiere
Subjects: Diffraction, Materials science, business.industry, Lithium niobate, Poling, Grating, Condensed Matter Physics, Ferroelectricity, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Optics, chemistry, Periodic poling, X-ray crystallography, Cathode ray, business
Abstract: Periodic poling in titanium indiffused lithium niobate by direct electron beam irradiation is reported in this paper and the benefits the technique of X-ray diffraction (XRD) as a method to examine the structure of ferroelectric domains is presented. It is shown that in the case of periodically poled crystals with a grating period lower or equal than a few microns, XRD enables to straightforwardly access the domain inverted grating period. The use of analytical functions to model the XRD profiles allows this method to be easily implemented for on line non-destructive characterization of the devices.
Published: 2003
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62. Defect structure of pulsed laser deposited LiNbO3/Al2O3 layers determined by X-ray diffraction reciprocal space mapping

Author: C. Girault-Di Bin, Laurent Canale, Alexandre Boulle, A. Dauger, René Guinebretière, Université de Limoges (UNILIM), Institut de Recherche en Communications Optiques et Microondes (IRCOM), Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, Materials science, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Mosaicity, Pulsed laser deposition, Optics, 0103 physical sciences, Materials Chemistry, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Condensed matter physics, business.industry, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Metals and Alloys, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Microstructure, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Reciprocal lattice, X-ray crystallography, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Crystallite, 0210 nano-technology, business
Abstract: Epitaxial LiNbO 3 films have been deposited on (0001) Al 2 O 3 substrates by pulsed laser deposition. The microstructure of the samples has been investigated by X-ray diffraction reciprocal space mapping. Data acquisition is performed on a high-resolution set-up suited to the study of oxide materials. The (000 l ) planes of the layer are found parallel to the (000 l ) planes of the substrate. The large in-plane misfit gives rise to two in-plane orientations. In the direction perpendicular to the surface the crystallite size (163 nm) is much smaller than the film thickness (510 nm) suggesting the presence of planar defects. Moreover, the values of the mosaicity (1.2°) and root-mean-squared strain (0.17%) cannot be solely explained by misfit dislocations. Conversely the high-thermal expansion coefficient mismatch is at the origin of a high compressive strain level (−0.18%) and may also be responsible for the large column length distribution, root-mean-squared strain and mosaicity.
Published: 2003
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63. Microstructural and Microwave Characterizations of Pulsed Laser Ablated Barium and Strontium Titanate Thin Films

Author: Annie Bessaudou, C. Girault-Di Bin, Françoise Cosset, Alexandre Boulle, Jean-Claude Vareille, René Guinebretière, and S. Liebus
Subjects: Permittivity, Materials science, business.industry, Dielectric, Condensed Matter Physics, Ferroelectricity, Electronic, Optical and Magnetic Materials, Pulsed laser deposition, Resonator, chemistry.chemical_compound, chemistry, Strontium titanate, Optoelectronics, Thin film, business, Microwave
Abstract: The use of thin films of ferroelectric materials as a non-linear dielectric at microwave frequencies and the integration of tunable dielectrics are actively being investigated for a variety of advanced high frequency applications. This paper is devoted to the elaboration of Ba 1 m x Sr x TiO 3 (BST) thin films by the pulsed laser deposition technique. The microstructure of the films is investigated by high resolution X-ray diffraction. A cavity resonator technique is used to determine the relative dielectric permittivity of the BST layers.
Published: 2003
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64. A high-resolution X-ray diffractometer for the study of imperfect materials

Author: René Guinebretière, Olivier Masson, Alexandre Boulle, André Lecomte, and A. Dauger
Subjects: Materials science, business.industry, Instrumentation, Detector, Resolution (electron density), General Biochemistry, Genetics and Molecular Biology, law.invention, Optics, law, Angular resolution, business, Single crystal, Beam (structure), Monochromator, Diffractometer
Abstract: A high-resolution X-ray diffractometer devoted to the study of imperfect materials (mainly oxides and ceramics) is presented. It is based on a rotating anode generator, a four-bounce monochromator, a five-movement sample holder and a curved position-sensitive detector (PSD). This setup allows rapid acquisition of a reciprocal-space map (in less than 10 h) even for very poorly diffracting materials. The two-dimensional instrumental profile is calculated taking into account each optical element in the beam path. The one-dimensional instrumental profiles corresponding to widely used scans (ω scan, θ–2θ scan, rocking curve and powder scan) are also calculated. In the three former cases, the setup exhibits an excellent angular resolution (0.003°), whereas in the latter case the resolution is lowered by one order of magnitude at the benefit of a strong increase in the collected intensity. The possibilities of this diffractometer are illustrated with three examples: an epitaxic layer, a microstructured single crystal and a powder.
Published: 2002
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65. Cartographie du réseau réciproque sur couches d'oxydes épitaxiées à l'aide d'un montage équipé d'un détecteur courbe à localisation

Author: Alexandre Boulle, Olivier Masson, A. Dauger, and René Guinebretière
Subjects: General Physics and Astronomy
Abstract: L'utilisation d'un montage associant un monochromateur a quatre reflexions et un detecteur courbe a localisation nous a permis de realiser, avec des durees d'acquisition raisonnables, des mesures completes de la distribution bidimensionnelle de l'intensite diffractee par des couches epitaxiees. Nous avons evalue de facon quantitative les caracteristiques microstructurales de couches d'oxyde elaborees par voie chimique en modelisant, a partir des parametres physiques caracterisant les couches etudiees, differentes projections ou sections de ces cartographies du reseau reciproque.
Published: 2002
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66. Microstructural analysis in epitaxial zirconia layers

Author: L. Pradier, René Guinebretière, Alexandre Boulle, A. Dauger, and Olivier Masson
Subjects: Materials science, General Physics and Astronomy, Surfaces and Interfaces, General Chemistry, Condensed Matter Physics, Surfaces, Coatings and Films, Grain growth, Reciprocal lattice, Crystallography, X-ray crystallography, Cubic zirconia, Crystallite, Composite material, Layer (electronics), Yttria-stabilized zirconia, Diffractometer
Abstract: Y2O3 stabilised ZrO2 (YSZ) layers were deposited on (1 1 2 0) Al2O3 by sol–gel dip-coating. A low temperature heat treatment produces a polycrystalline film. Further heating at 1500 °C yields an epitaxial layer by grain growth of the islands with the lowest interfacial energy. We used a home-made high resolution diffractometer to record reciprocal space maps of the YSZ layer. The simulation of the diffraction profiles with a kinematical scattering model enables us to extract the strain profile within the layer, the average thickness and the vertical island size distribution.
Published: 2002
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67. Combined strain and composition-induced effects in the metal-insulator transition of epitaxial VO2 films

Author: Aurelian Crunteanu, Virginie Théry, Jean-Christophe Orlianges, Alexandre Boulle, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, chemistry.chemical_element, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Oxygen, Thermal expansion, Reciprocal lattice, Lattice constant, chemistry, Electrical resistivity and conductivity, Lattice (order), 0103 physical sciences, Metal–insulator transition, 010306 general physics, 0210 nano-technology
Abstract: International audience; The role of epitaxial strain, thermal strain, and bulk (strain-free) lattice parameter in the metal-insulator transition (MIT) and the structural phase transition (SPT) of VO2 is investigated for the case epitaxial films grown on (001)-oriented TiO2 substrates. Temperature-resolved X-ray reciprocal space mapping has been used to determine the absolute state of strain as well as the bulk lattice parameters of VO2 at 100 • C. For the thinnest film (15 nm), the state of strain is dominated by the film/substrate lattice mismatch yielding an in-plane tensile strain which, in turn, shifts both the MIT and the SPT towards lower temperatures. Conversely, for the thickest film (100 nm), the epitaxial strain is relaxed, so that state of strain is dominated by the VO2/TiO2 thermal expansion mismatch which is responsible for a compressive in-plane strain. In all cases a swelling of the strain-free VO2 unit-cell is observed which indicates the presence of interfacial oxygen vacancies and/or Ti diffusion into the VO2 films. The presence of oxygen vacancies stabilize the metallic rutile phase and counterbalances the action of thermal strain on the MIT and the SPT and degrade the electric properties for the thinnest film. For the thickest film the resistivity ratio is 6.4 × 10 4.
Published: 2017
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68. Planar faults in Aurivillius compounds: An X-ray diffraction study

Author: Alexandre Boulle, R. Guinebretiè, C. Legrand, J. P. Mercurio, and A. Dauger
Subjects: Diffraction, Materials science, Physics and Astronomy (miscellaneous), biology, Metals and Alloys, Stacking, Thermal treatment, Condensed Matter Physics, biology.organism_classification, Molecular physics, Electronic, Optical and Magnetic Materials, Aurivillius, Crystallography, Planar, X-ray crystallography, General Materials Science, Anisotropy, Powder diffraction
Abstract: Layered bismuth-containing perovskites are known to be subject to complex structural imperfections such as planar faults. A careful analysis of X-ray powder diffraction lines of the Aurivillius compound SrBi2Nb2O9 shows that stacking faults are located along the c axis and (hk0) reflections are thus unaffected by faulting. In the [001] direction the profiles exhibit a Lorentzian shape and a 22 nm coherently diffracting domain size is found, which corresponds to a stacking-fault density of 0.032 nm−1. The reciprocal-space mapping technique applied to epitaxial layers allows direct visualization of the highly anisotropic (001) reciprocal-lattice points. Because of the high counting rates and the lack of peak overlap in epitaxial layers, very subtle changes in the diffraction profiles can be measured as a function of thermal treatment time. Thermal annealing at 700°C up to 600 h reduces the stacking-fault density as attested by the strong increase in the domain size (198nm) and the broadening of the...
Published: 2002
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69. Interplay between atomic disorder, lattice swelling, and defect energy in ion-irradiation-induced amorphization of SiC

Author: Aurélien Debelle, Alain Chartier, Fei Gao, Alexandre Boulle, William J. Weber, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Service de la Corrosion et du Comportement des Matériaux dans leur Environnement (SCCME), Département de Physico-Chimie (DPC), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Department of Nuclear Engineering and Radiological Sciences, University of Michigan., University of Michigan [Ann Arbor], University of Michigan System-University of Michigan System, Department of Materials Science and Engineering [Knoxville], The University of Tennessee [Knoxville], Materials Science and Technology Division [Oak Ridge], Oak Ridge National Laboratory [Oak Ridge] (ORNL), UT-Battelle, LLC-UT-Battelle, LLC, Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, Coalescence (physics), Materials science, Elastic energy, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Crystallographic defect, Molecular physics, Electronic, Optical and Magnetic Materials, Ion, 0103 physical sciences, X-ray crystallography, Radiation damage, Irradiation, 010306 general physics, 0210 nano-technology
Abstract: International audience; A combination of experimental and computational evaluations of disorder level and lattice swelling in ion-irradiated materials is presented. Information obtained from X-ray diffraction experiments is compared to X-ray diffraction data generated using atomic-scale simulations. The proposed methodology, which can be applied to a wide range of crystalline materials, is used to study the amorphization process in irradiated SiC. Results show that this process can be divided into two steps. In the first step, point defects and small defect clusters are produced and generate both large lattice swelling and high elastic energy. In the second step, enhanced coalescence of defects and defect clusters occurs to limit this increase in energy, which rapidly leads to complete amorphization. 2
Published: 2014
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70. Structural observation of piezoelectric inhomogeneity in a mixed-orientation Na0.5Bi0.5TiO3 perovskite thin film

Author: Alexandre Boulle, Thomas W. Cornelius, Genziana Bussone, M. Bousquet, Brice Gautier, Jean-René Duclere, Anastasios Pateras, Dina Carbone, Paul G. Evans, European Synchrotron Radiation Facility (ESRF), National Technical University of Athens [Athens] (NTUA), University of Wisconsin-Madison, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Piezoelectric coefficient, Physics and Astronomy (miscellaneous), Piezoelectric fields, 02 engineering and technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], Electric field, Polarization, 0103 physical sciences, Piezoelectric films, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Perovskite (structure), 010302 applied physics, Condensed matter physics, Crystal structure, 021001 nanoscience & nanotechnology, Polarization (waves), Microstructure, Ferroelectric thin films, Ferroelectricity, Piezoelectricity, Crystallography, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology
Abstract: International audience; Thin films of the lead-free ferroelectric Na0.5Bi0.5TiO3 grown on thin-film Pt electrodes supported by SrTiO3 substrates have a complex microstructure consisting of crystalline grains with three distinct major crystallographic orientations. The piezoelectric response measured in spatially separated sub-micron grains using time-resolved synchrotron x-ray microdiffraction is highly inhomogeneous even among grains sharing the same major orientation. The piezoelectric coefficient d33 varies by nearly a factor of two in a series of areas sharing the 〈001〉 orientation. The piezoelectric inhomogeneity is linked to the peculiar microstructure of the film, arising from local variations in the stress imposed by surrounding grains with different crystallographic orientations and differing directions of the ferroelectric remnant polarization. A systematic nonlinearity of the piezoelectric strain is observed in applied electric fields with small magnitudes in all regions, consistent with the coexistence of domains of differing polarization direction at zero applied electric field.
Published: 2014
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71. Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC

Author: Henrik Jacobson, Alexandre Boulle, Anne Henry, Didier Chaussende, Xun Li, Shanghai Key Laboratory of Trustworthy Computing, East China Normal University [Shangaï] (ECNU), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique Moleculaire pour l'Atmosphere et l'Astrophysique (LPMAA), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, Materials science, Analytical chemistry, Chemical vapor deposition, [CHIM.MATE]Chemical Sciences/Material chemistry, Epitaxy, Electronic, Optical and Magnetic Materials, law.invention, Reciprocal lattice, Full width at half maximum, Reflection (mathematics), Optical microscope, law, Teknik och teknologier, Engineering and Technology, Layer (electronics)
Abstract: International audience; High quality double-position-boundaries free 3C-SiC epilayers have been successfully grown on on-axis (0001) 4H-SiC by chemical vapor deposition at optimized conditions as observed with optical microscopy and X-ray diffraction. The effect of the growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H-2 ratio, N-2 addition and pressure, on the quality of the grown layers is investigated. Different techniques, including microscopic and spectroscopic techniques, are used to characterize the epilayers. High resolution X-ray diffraction shows 2 theta-omega curve with full width at half maximum of only 16 arcsec for the (111) reflection detected from a 35 mu m thick 3C-SiC layer, showing the good structural quality of the layer. Reciprocal space maps confirm the absence of double-position-boundaries in a large depth of the layers. Low temperature photoluminescence measurement shows clear near-bandgap emission with sharp and single peaks, which further verifies the high quality of the epilayers. (C) 2014 The Electrochemical Society. All rights reserved.
Published: 2014
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72. Stacking Disorder in Aurivillius Compounds Studied by X-Ray Diffraction Line Profile Analysis

Author: P. Thomas, René Guinebretière, J. P. Mercurio, C. Legrand, Alexandre Boulle, and A. Dauger
Subjects: Aurivillius, Crystallography, Materials science, biology, Mechanics of Materials, Mechanical Engineering, X-ray crystallography, Stacking, General Materials Science, Line profile analysis, Condensed Matter Physics, biology.organism_classification
Published: 2001
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73. Miscut angles measurement and precise sample positioning with a four circle diffractometer

Author: Olivier Masson, Alexandre Boulle, René Guinebretière, and A. Dauger
Subjects: Physics, Surface (mathematics), Plane (geometry), business.industry, General Physics and Astronomy, Surfaces and Interfaces, General Chemistry, Condensed Matter Physics, Sample (graphics), Surfaces, Coatings and Films, Optics, X-ray crystallography, business, Diffractometer
Abstract: A method is derived for precise sample positioning with a four circle diffractometer. The sample can be oriented either with respect to a crystallographic plane or with respect to the sample surface with an accuracy of about 0.001°. The miscut angles can be easily deduced with an accuracy of a few 1/1000°.
Published: 2001
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74. X-Ray diffraction line broadening by stacking faults in SrBi2Nb2O9/SrTiO3 epitaxial thin films

Author: Alain Dauger, Alexandre Boulle, René Guinebretière, C. Legrand, and J.P. Mercurio
Subjects: Diffraction, Spin coating, Materials science, Condensed matter physics, Metals and Alloys, Stacking, Surfaces and Interfaces, Grain size, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Crystallography, X-ray crystallography, Materials Chemistry, Crystallite, Thin film, Stacking fault
Abstract: SrBi 2 Nb 2 O 9 thin films were deposited on (001) SrTiO 3 substrate by sol–gel spin coating. A previous study showed that the film crystallizes with the c -axis normal to the surface. Those epitaxial films are studied by means of X-ray diffraction (XRD) line profile analysis as a function of thermal annealing duration. The line profile analysis of the diffraction patterns collected in ω-2θ scan mode, gives detailed information on the coherently diffracting domain size and microstrains along a given direction. For low annealing duration the width of the (001) diffraction lines reaches values of approximately 1°. In accordance with a recent study, integral breadth and Fourier analysis suggest the presence of stacking faults separated by a mean distance of 5 nm. The profiles exhibit a marked Lorentzian character as expected from a faulted crystal. In addition to faulting, both finite grain size and microstrains contribute to the observed width. When heat treatment time is increased, the breadth and Lorentzian content of the (001) diffraction lines decrease attesting that the stacking fault density is lowered. For a 500-h treatment at 700°C the calculated domain size equals the films thickness. This indicates that stacking faults have almost disappeared: the SBN crystallites of the film have reached an equilibrium state.
Published: 2001
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75. Ceramic nanocomposites obtained by sol–gel coating of submicron powders

Author: Bernard Soulestin, Z. Oudjedi, Alexandre Boulle, A. Dauger, and René Guinebretière
Subjects: Materials science, Polymers and Plastics, Spinel, Metallurgy, Metals and Alloys, Sintering, engineering.material, Microstructure, Grain size, Electronic, Optical and Magnetic Materials, Grain growth, Coating, visual_art, Ceramics and Composites, engineering, visual_art.visual_art_medium, Cubic zirconia, Ceramic, Composite material
Abstract: MgAl 2 O 4 –ZrO 2 nanocomposites were fabricated by conventional sintering of composite powders obtained by sol–gel coating of a submicron spinel powder. In the composite powder the zirconia grains remain narrow sized and completely tetragonal even after being heat treated at temperatures where a free xerogel is completely monoclinic. The sintered material exhibits a dense, fine and highly homogeneous microstructure. The zirconia nanoparticles are located at both inter- and intragranular positions and exhibit heteroepitaxial relationships with the surrounding crystals. Tetragonal zirconia seems to be stabilised by an interface effect. Both the scale of the microstructure and the fraction of intragranular grains were controlled by adjusting the mean grain size of spinel grains before coating and sintering conditions.
Published: 2001
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76. Polytypic transformations in SiC : diuse X-ray scattering and Monte Carlo simulations

Author: Alexandre Boulle, I.G. Galben-Sandulache, Deborah Dompoint, Didier Chaussende, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Physics, Phase transition, Condensed matter physics, Scattering, Monte Carlo method, Stacking, PACS numbers: 61.72.Dd, 61.72.Nn, 61.50.Ks, 81.05.Hd, Interaction model, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Critical value, 01 natural sciences, Molecular physics, Dissociation (chemistry), Electronic, Optical and Magnetic Materials, 0103 physical sciences, Ising model, 010306 general physics, 0210 nano-technology
Abstract: Solid-state phase transitions in SiC are investigated using diffuse x-ray scattering and Monte Carlo simulations. As an example, the 3C-6H transformation is investigated in detail. The transformation is modeled with a statistical algorithm based on the concept of double cross-slipping and subsequent dissociation of basal plane dislocations. The corresponding diffuse x-ray scattering curves are calculated and quantitatively compared with experimental data obtained from 3C-SiC crystals annealed at high temperatures (1700--2100${}^{\ensuremath{\circ}}\phantom{\rule{0.16em}{0ex}}\mathrm{C}$). From the simulations, it is demonstrated that the transformation implies the multiplication and ordering of double and triple stacking faults (SFs). The transformation level and root-mean-squared strains associated with the dislocations are determined from the simulations. The defect structure formed during the transition can be rationalized by considering the relative energies of the SFs. Using an axial next-nearest-neighbor Ising interaction model we show that single SFs are not energetically favored, whereas the simultaneous occurrence of double and triple SFs implies that their relative energy difference remains below a critical value ($\ensuremath{\sim}$8--9%).
Published: 2013
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77. Influence of elastic properties on the strain induced by ion irradiation in crystalline materials

Author: J. Moeyaert, Frédérico Garrido, A. Debelle, Alexandre Boulle, Lionel Thomé, F. Rakotovao, C. Bachelet, CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), CSNSM SEMI, Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Acoustics and Ultrasonics, mechanical & thermal, 02 engineering and technology, 01 natural sciences, Ion, chemistry.chemical_compound, symbols.namesake, 0103 physical sciences, Cubic zirconia, Van der Waals radius, Irradiation, Ceramic, Composite material, Condensed matter: structural, Anisotropy, 010302 applied physics, Relaxation (NMR), [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Crystallography, chemistry, visual_art, visual_art.visual_art_medium, Strontium titanate, symbols, 0210 nano-technology
Abstract: International audience; Cubic zirconia, an elastically anisotropic material, has been irradiated with 300 keV Cs+ ions and the irradiation-induced elastic strain has been measured using x-ray diffraction (XRD). In order to highlight the influence of the elastic properties on the strain level, two different cases have been investigated: (i) {1 0 0} versus {1 1 1}-oriented zirconia single crystals and (ii) {1 0 0} zirconia versus {1 0 0} strontium titanate. In the former case, raw experimental results show that the {1 0 0} planes deform less than the {1 1 1} planes. However, with a modelling that takes into account the effect of the elastic properties, it is demonstrated that the strain due to irradiation defects only is the same for both orientations (with a maximum value of ~0.8%). Combined use of this modelling and of a dedicated computer program for fitting XRD data allowed determining both defect concentration (~1%) and relaxation volume (~0.5 atomic volume). In the latter case, it is shown that elastic properties affect the measured strain in irradiated zirconia and strontium titanate. However, a difference between the two materials remains even taking into account this effect, confirming that different compounds of a same class of materials (namely ceramic oxides) can exhibit a different response to ion irradiation
Published: 2013
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78. 3C-SiC heteroepitaxy on hexagonal SiC substrates

Author: Xun Li, Sven Andersson, Erik Janzén, Henrik Jacobson, Anne Henry, Didier Chaussende, Alexandre Boulle, Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM), and Bathias, Pamela
Subjects: Photoluminescence, Materials science, Heteroepitaxial Growth, 02 engineering and technology, Substrate (electronics), Chemical vapor deposition, 01 natural sciences, law.invention, Crystal, 3C-SiC(111), Optical microscope, law, 0103 physical sciences, Naturvetenskap, X-Ray Diffraction (XRD), Photoluminescence (PL), General Materials Science, Single domain, 3C-SiC, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [CHIM.MATE] Chemical Sciences/Material chemistry, Sublimation Epitaxy, business.industry, Mechanical Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, CVD, Characterization (materials science), Heteroepitaxy, Crystallography, Mechanics of Materials, TEM, Optoelectronics, 0210 nano-technology, business, Natural Sciences, Layer (electronics)
Abstract: The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 µm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray techniques and photoluminescence are compared for the evaluation of the crystal quality and purity of the layers.
Published: 2013
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79. Investigation of irradiation effects induced by self-ion in 6H-SiC combining RBS/C, Raman and XRD

Author: P. Trocellier, William J. Weber, Yanwen Zhang, Alexandre Boulle, Constantin Meis, Gaël Sattonnay, N. Chaâbane, A. Debelle, L. Gosmain, Yves Serruys, Lionel Thomé, Institut National des Sciences et Techniques Nucléaires (INSTN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Service d'Etudes des Matériaux Irradiés (SEMI), Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
Subjects: 010302 applied physics, Nuclear and High Energy Physics, Materials science, Annealing (metallurgy), Analytical chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Rutherford backscattering spectrometry, Channelling, 01 natural sciences, Fluence, Damage characterization, Amorphous solid, Ion, Crystallography, symbols.namesake, 6H-SiC, Ion irradiation, 0103 physical sciences, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Irradiation, 0210 nano-technology, Raman spectroscopy, Instrumentation
Abstract: Single crystals of 6H-SiC were irradiated at room temperature and 670 K with 4 MeV C ions at two fluences: 10 15 and 10 16 cm −2 (0.16 and 1.6 dpa at the damage peak). Damage accumulation was studied by a combination of X-ray diffraction (XRD), Raman spectroscopy and Rutherford backscattering spectrometry in channelling geometry (RBS/C) along the [0 0 0 1] direction. The irradiated layer is found to be composed of a low damage region up to ∼1.5 μm followed by a region where the disorder level is higher, consistent with SRIM predictions. At room temperature and low fluence, typically 10 15 cm −2 , the strain depth profile follows the dpa depth distribution (with a maximum value of ∼2%). The disorder is most likely due to small defect clusters. When increasing the fluence up to 10 16 cm −2 , a buried amorphous layer forms, as indicated by e.g. Raman results where the Si–C bands become broader or even disappear. At a higher irradiation temperature of 670 K, amorphization is not observed at the same fluence, revealing a dynamic annealing process. However, results tend to suggest that the irradiated layer is highly heterogeneous and composed of different types of defects.
Published: 2012
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80. Diffuse X-ray scattering from partially transformed 3C-SiC single crystals

Author: I.G. Galben-Sandulache, Deborah Dompoint, Didier Chaussende, Alexandre Boulle, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nuclear and High Energy Physics, Materials science, Stacking, 02 engineering and technology, Silicon carbide, diffuse X-ray scattering, 01 natural sciences, Molecular physics, chemistry.chemical_compound, Optics, 0103 physical sciences, Perpendicular, Silicon carbide 3C-6H transition, Instrumentation, stacking faults, 010302 applied physics, business.industry, Scattering, X-ray, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Reciprocal lattice, chemistry, 3C-6H transition, Volume fraction, Partial dislocations, 0210 nano-technology, business
Abstract: International audience; The 3C-6H polytypic transition in 3C-SiC single crystals is studied by means of diffuse X-ray scattering (DXS) coupled with numerical simulations. It is shown that the presence of spatially correlated stacking faults (characteristic of this type of re-stacking transition) gives rise to extended diffuse scattering in the reciprocal space perpendicularly to the fault plane. The simulation of the diffuse intensity allows to determine both the volume fraction of transformed material and the transformation level within these regions. It is further shown that the evolution with time and temperature of the transition implies the multiplication and glide of partial dislocations, the kinetics of which are quantified by means of DXS.
Published: 2012
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81. Epitaxial growth and properties of lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition on various single crystal substrates

Author: Fabien Remondiere, Pascal Marchet, Maryline Guilloux-Viry, Stéphanie Députier, Jean-René Duclere, F. Jean, M. Bousquet, Jean-Christophe Orlianges, and Alexandre Boulle
Subjects: 010302 applied physics, Materials science, biology, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, biology.organism_classification, Epitaxy, 01 natural sciences, Pulsed laser deposition, Chemical engineering, 0103 physical sciences, Lanio, Crystallite, Texture (crystalline), Thin film, 0210 nano-technology, Layer (electronics), Single crystal
Abstract: The epitaxial growth of lead-free ferroelectric Na 0.5 Bi 0.5 TiO 3 (NBT) thin films on various single crystal substrates was successfully achieved, using the pulsed laser deposition technique (PLD). The present work is divided in two parts, focused on: (i) the growth of NBT layers on c- and r-sapphire (Al 2 O 3 ) substrates, with and without introducing a CeO 2 buffer layer, and (ii) the growth of NBT layers on bare (001)SrTiO 3 substrates, with and without introducing a LaNiO 3 layer, that could be used as a bottom electrode. In the first part, it was shown that the introduction of a CeO 2 buffer layer completely modifies the out-of-plane growth orientation of the NBT films, as well as their microstructure. Indeed, (001)NBT films epitaxially grow only on r-Al 2 O 3 substrates buffered with epitaxial (001)CeO 2 layers, while, growing simply NBT on top of bare c or r-Al 2 O 3 substrates, or on top of CeO 2 /c-Al 2 O 3 heterostructures leads to polycrystalline or textured films. In the second part, we demonstrate that (001)-oriented NBT layers deposited on either bare (001)SrTiO 3 or (001)SrTiO 3 substrates (STO) covered with (001)LaNiO 3 (LNO) are systematically epitaxially grown. Furthermore, the microstructure of the samples is strongly affected by the introduction of the LaNiO 3 layer.
Published: 2012
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82. On the stability of 3C-SiC single crystals at high temperatures

Author: Deborah Dompoint, Irina G. Galben-Sandulache, Alexandre Boulle, Didier Chaussende, Dominique Eyidi, Jean Luc Demenet, Marie France Beaufort, Jacques Rabier, Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Institut Pprime (PPRIME), Université de Poitiers-Centre National de la Recherche Scientifique (CNRS)-ENSMA, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and ENSMA-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers
Subjects: Materials science, Kinetics, Stacking, 02 engineering and technology, 01 natural sciences, Molecular physics, 0103 physical sciences, General Materials Science, stacking faults, 3C-SiC, 010302 applied physics, Scattering, Mechanical Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Crystallography, Mechanics of Materials, Transmission electron microscopy, 3C-6H transition, Volume fraction, Partial dislocations, Dislocation, 0210 nano-technology, Stacking fault, dislocations
Abstract: International audience; The 3C-6H polytypic transition in 3C-SiC single crystals is studied by means of diffuse X-ray scattering (DXS) coupled with transmission electron microscopy (TEM). TEM reveals that the partially transformed SiC crystals contain regions of significantly transformed SiC (characterized by a high density of stacking faults) co-existing with regions of pure 3C-SiC. The simulation of the diffuse intensity allows to determine both the volume fraction of transformed material and the transformation level within these regions. It is further shown that the evolution with time and temperature of the transition implies the multiplication and glide of partial dislocations, the kinetics of which are quantified by means of DXS.
Published: 2012
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83. Response of cubic zirconia irradiated with 4-MeV Au ions at high temperature: an X-ray diffraction study

Author: Frédérico Garrido, S. Moll, P. Rosza, A. Debelle, Alexandre Boulle, Lionel Thomé, L. Qasim, CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
Subjects: Diffraction, Nuclear and High Energy Physics, Materials science, XRD, Analytical chemistry, 02 engineering and technology, 01 natural sciences, Fluence, Ion, Strain, [SPI.MAT]Engineering Sciences [physics]/Materials, 0103 physical sciences, Cubic zirconia, Irradiation, Instrumentation, Yttria-stabilized zirconia, 010302 applied physics, Relaxation (NMR), Temperature, 021001 nanoscience & nanotechnology, Crystallography, YSZ, Ion irradiation, X-ray crystallography, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology
Abstract: Yttria-stabilized cubic zirconia single-crystals have been irradiated with 4-MeV Au2+ ions at fluences ranging from 1012 cm−2 to 5 × 1015 cm−2 and at three temperatures (room temperature, 500 °C and 800 °C). Evaluation of the irradiation-induced strain has been performed by the X-ray diffraction technique. It is found that, whatever the irradiation temperature, the elastic-strain build-up exhibits two steps. An increase of the (tensile) strain-level is observed in the first step. A drastic strain relaxation occurs at a transition fluence, which defines the beginning of the second step. Increasing the irradiation temperature induces a decrease of the strain level and a shift of the transition fluence towards low fluence. Both effects may be explained by an enhanced defect-clustering rate which occurs already at 500 °C.
Published: 2012
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84. Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

Author: Stamatis Mylonas, N. Juslin, F. Garrido, Marie Backman, Didier Chaussende, William J. Weber, Alexandre Boulle, Lionel Thomé, Aurélien Debelle, Marcel Toulemonde, Flyura Djurabekova, Kai Nordlund, Olli H. Pakarinen, CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), CSNSM PS1, Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Department of Physics [Helsinki], Falculty of Science [Helsinki], Helsingin yliopisto = Helsingfors universitet = University of Helsinki-Helsingin yliopisto = Helsingfors universitet = University of Helsinki, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Laboratory of Physics, Helsinki University of Technology, TKK Helsinki University of Technology (TKK), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Boulle, Alexandre, Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), University of Helsinki-University of Helsinki, Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, and Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)
Subjects: TRACKS, Materials science, 02 engineering and technology, Radiation, AMORPHIZATION, 01 natural sciences, 7. Clean energy, Ion, Molecular dynamics, chemistry.chemical_compound, Swift heavy ion, 0103 physical sciences, Thermal, Silicon carbide, Irradiation, PACS: 61.80.-x, 61.72.Cc, 61.85.+p, 61.43.Bn, 010302 applied physics, [CHIM.MATE] Chemical Sciences/Material chemistry, fungi, Recrystallization (metallurgy), INORGANIC INSULATORS, [CHIM.MATE]Chemical Sciences/Material chemistry, COLLISION CASCADES, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Electronic, Optical and Magnetic Materials, IRRADIATION, chemistry, Chemical physics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], RADIATION, Atomic physics, 0210 nano-technology
Abstract: Expérience GANIL/ARIBE; International audience; The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.
Published: 2012
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85. Electrical properties of (110) epitaxial lead free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition : macroscopic and nanoscale data

Author: Pascal Marchet, Stéphanie Députier, Jean-René Duclere, Aiying Wu, Didier Fasquelle, David Albertini, Brice Gautier, Maryline Guilloux-Viry, Corinne Champeaux, Fabien Remondiere, M. Bousquet, Alexandre Boulle, Paula M. Vilarinho, Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Center for Research in Ceramic and Composite Materials (CICECO), Universidade de Aveiro, Institut des Sciences Chimiques de Rennes (ISCR), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Unité de Dynamique et Structure des Matériaux Moléculaires (UDSMM), Université du Littoral Côte d'Opale (ULCO), Axe 2 : procédés de traitements de surface, European Project, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Materials science, behavior, piezoceramics, Analytical chemistry, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Ferroelectricity, Pulsed laser deposition, electrodes, Hysteresis, 0103 physical sciences, [CHIM]Chemical Sciences, Dielectric loss, Crystallite, platinum, Thin film, 0210 nano-technology, Saturation (magnetic)
Abstract: International audience; We report the electrical properties, measured both at the macroscopic and nanometric scales, of epitaxial (110)-Na0.5Bi0.5TiO3 (NBT) thin ﬁlms grown on (110)Pt/(110)SrTiO3 by pulsed laser deposition (PLD). The inﬂuence of the A-site composition (Na and/or Bi excess) on both the structural/microstructural characteristics and the electrical properties is discussed. Whatever the composition of the NBT target, the ﬁnal layers are systematically epitaxially grown, with NBT crystallites mainly (110)-oriented, and as well (100)-oriented for some minor proportion. Atomic force microscopy (AFM) images reveal the coexistence of two kinds of grains presenting different shapes: namely ﬂat and elongated grains, corresponding to (100)- and (110)-oriented NBT crystallites, respectively. The macroscopic ferroelectric properties were measured at room temperature. A rather well-deﬁned shape of the hysteresis loops was obtained: the incorporation of a Bi excess in the target clearly improves the saturation of the loops. The ferroelectric performances are a remanent polarization (Pr ) value, ranging from 7 to 14 lC/cm 2 , associated with a coercive ﬁeld (Ec ) in the range 68-85 kV/cm. In addition, at 10 5 Hz, the relative permittivity was about er 255-410 and the dielectric losses (tan d) were 6%-7%. Finally, the electrical properties at the local scale were investigated by coupling piezoresponse force microscopy (PFM) and tunneling AFM (TUNA) measurements. The collected data reveal that the two types of grains behave differently. The PFM amplitude signal of (110)-oriented grains is very contrasted and such grains are often divided in ferroelectric bi-domains of nanometric sizes, whereas the response of (100)-oriented grains is less contrasted and more homogeneous. The interpretation of the PFM signal is provided. The piezoloop recorded on a (110)NBT grain is strongly distorted and shifted along the vertical axis, in agreement with the vertical drift observed for macroscopic ferroelectric data. Finally, TUNA data clearly indicate that ﬂat grains are leakier than elongated grains, highlighting the anisotropy of the electrical properties at the local scale
Published: 2012
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86. Strain effect in PbTiO3/PbZr0.2Ti0.8O3 superlattices: From polydomain to monodomain structures

Author: N. Lemée, M. G. Karkut, C. Hubault, Brice Gautier, Janez Holc, André Perrin, Loic Dupont, Valérie Demange, C. Davoisne, Alexandre Boulle, M. Kosec, Laboratoire de Physique de la Matière Condensée - UR UPJV 2081 (LPMC), Université de Picardie Jules Verne (UPJV), Laboratoire réactivité et chimie des solides - UMR CNRS 7314 (LRCS), Université de Picardie Jules Verne (UPJV)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Elect Ceramics Department - slovenia, Jozef Stefan Institute [Ljubljana] (IJS), Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)
Subjects: Diffraction, Materials science, General Physics and Astronomy, 02 engineering and technology, 01 natural sciences, deposition, Mosaicity, Pulsed laser deposition, Optics, Lattice constant, 0103 physical sciences, [CHIM]Chemical Sciences, High-resolution transmission electron microscopy, fields, defects, 010302 applied physics, Condensed matter physics, business.industry, layer, 021001 nanoscience & nanotechnology, Ferroelectric thin films, Reciprocal lattice, Epitaxial multilayers, Volume fraction, X-ray crystallography, 0210 nano-technology, business
Abstract: International audience; Ferroelectric symmetric superlattices consisting of alternating layers of PbTiO3 and PbZr0.2Ti0.8O3, were grown by pulsed laser deposition on SrTiO3 and SrRuO3-coated SrTiO3 substrates. The superlattices, with wavelengths K ranging from 20A ° to 200A ° , were analyzed using x-ray diffraction (h 2h diffraction scans, rocking curves, and reciprocal space mapping), high resolution transmission electron microscopy, and piezoforce scanning microscopy. For large-period superlattices, the strain is relieved by the formation of an a/c polydomain structure which propagates through the whole film. We investigate the influence of the wavelength on the a-domain volume fraction, the lattice parameters, the in-plane strain exx, and the mosaicity of the samples. We show that with decreasing the wavelength, a reduction of the a-domain volume fraction is observed as well as a reduced tensile in-plane strain and a lower mosaicity. A concomitant improvement of the local ferroelectric response is detected. Below a critical wavelength of about 30A ° and a critical sample thickness of 500A ° , the formation of 90 a/c domains is inhibited and the superlattices are completely c oriented. Thus the reduced wavelength induces compressive strain which dominates over the tensile clamping due to the thermal expansion mismatch between the substrate and the superlattice. This compressive strain favors a c-oriented structure in the PbTiO3/PbZr0.2Ti0.8O3 superlattices.
Published: 2012
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87. The micro and nanostructure of imperfect oxide epitaxial films

Author: Alexandre Boulle, Florine Conchon, René Guinebretière, Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), EMIX, and E.J. MITTEMEIJER, U. WELZEL
Subjects: 010302 applied physics, Materials science, Nanostructure, business.industry, Oxide, Bragg peak, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, chemistry.chemical_compound, symbols.namesake, [SPI]Engineering Sciences [physics], Optics, Fourier transform, chemistry, 0103 physical sciences, X-ray crystallography, symbols, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: 554 pages; International audience
Published: 2012
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88. Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: a diuse X-ray scattering study

Author: Irina G. Galben-Sandulache, Alexandre Boulle, M.F. Beaufort, Jacques Rabier, D. Eyidi, Didier Chaussende, Deborah Dompoint, Thierry Ouisse, Le Thi Mai Hoa, J. L. Demenet, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut Pprime (PPRIME), ENSMA-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers, Laboratoire des matériaux et du génie physique (LMGP), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), and Université de Poitiers-Centre National de la Recherche Scientifique (CNRS)-ENSMA
Subjects: 010302 applied physics, Materials science, Birefringence, Scattering, Annealing (metallurgy), General Physics and Astronomy, 02 engineering and technology, Slip (materials science), [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, Crystal, Condensed Matter::Materials Science, Crystallography, Transmission electron microscopy, 0103 physical sciences, Microscopy, Partial dislocations, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: In this work, the kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals are studied in details by means of diffuse x-ray scattering (DXS) coupled with numerical simulations and transmission electron microscopy and optical birefringence microscopy. Upon high-temperature annealing, spatially correlated stacking faults (SFs), lying in the {111} planes, are generated within the crystal and tend to form bands of partially transformed SiC. It is shown that the numerical simulation of the DXS curves allows to unambiguously deduce the transformation level within these bands, as well as the volume fraction corresponding to these bands. Increasing annealing time results (1) in the growth of the partially transformed regions by the glide of the partial dislocations bounding the SFs and (2) in the generation of new SFs within the crystal by means of a double-cross slip motion. The kinetics of each of these mechanisms are presented and discussed with respect to the annealing temperature, the initial SF density and crystalline quality.
Published: 2011
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89. Strain and stress build-up in He-implanted UO2 single crystals: an X-ray diffraction study

Author: F. Garrido, Lionel Thomé, Alexandre Boulle, Aurélien Debelle, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, Materials science, XRD, FUELS, Radiation effects, 02 engineering and technology, UO2, UO 2, 01 natural sciences, Fluence, Stress (mechanics), 0103 physical sciences, Radiation damage, SCATTERING, General Materials Science, Composite material, ION, 010302 applied physics, LATTICE-DEFECTS, Strain (chemistry), He, Mechanical Engineering, Relaxation (NMR), [CHIM.MATE]Chemical Sciences/Material chemistry, CUBIC ZIRCONIA, 021001 nanoscience & nanotechnology, Reciprocal lattice, Crystallography, RADIATION-DAMAGE, Mechanics of Materials, X-ray crystallography, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Defects, 0210 nano-technology, Elastic strain, BEHAVIOR, HELIUM
Abstract: International audience; The strain and stress build-up in 20-keV He-implanted UO 2 single crystals have been determined by means of X-ray diffraction through reciprocal space mapping, with the use of a model dedicated to the analysis of the strain/stress state of ion-irradiated materials. Results indicate that the undamaged part of the crystals exhibits no strain or stress; on the other hand, the implanted layer undergoes a tensile strain directed along the normal to the surface of the crystals and a compressive in-plane stress. The build-up of both strain and stress with He fluence exhibits a two-step process: (i) a progressive increase up to a maximum level of ~ 1% for the strain and ~-2.8 GPa for the stress, followed by (ii) a dramatic decrease. The origin of the strain and stress build-up is the formation of both self-interstitial defects and small He-vacancy clusters. The strain, and stress relief is tentatively attributed to the formation of extended defects (such as dislocations) that induce a plastic relaxation.
Published: 2011
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90. Inhibition of polydomain formation in PbTiO3/PbZr0.2Ti0.8O3 superlattices by intercalation of ultra-thin SrTiO3 layers

Author: Alexandre Boulle, C. Hubault, N. Lemée, M. G. Karkut, Janez Holc, C. Davoisne, M. Kosec, André Perrin, Loic Dupont, Laboratoire de Physique de la Matière Condensée - UR UPJV 2081 (LPMC), Université de Picardie Jules Verne (UPJV), Laboratoire réactivité et chimie des solides - UMR CNRS 7314 (LRCS), Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Elect Ceramics Department - slovenia, Jozef Stefan Institute [Ljubljana] (IJS), Université de Picardie Jules Verne (UPJV)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, superlattices, Physics and Astronomy (miscellaneous), Superlattice, Intercalation (chemistry), 02 engineering and technology, 01 natural sciences, Zirconium compounds, epitaxial layers, Pulsed laser deposition, 0103 physical sciences, transmission electron microscopy, lead compounds, [CHIM]Chemical Sciences, Elasticity (economics), 010306 general physics, Polarization (electrochemistry), pulsed laser deposition, Condensed matter physics, association, 021001 nanoscience & nanotechnology, Crystallography, Reciprocal lattice, Transmission electron microscopy, zirconium compounds, elasticity, 0210 nano-technology
Abstract: International audience; We used pulsed laser deposition to grow a series of PbTiO3/PbZr0.2Ti0.8O3 superlattices on SrTiO3 and SrRuO3/SrTiO3 substrates. An a/c polydomain structure was evidenced by reciprocal space mapping and by transmission electron microscopy. Insertion of ultra-thin layers of SrTiO3 at the interfaces between PbTiO3 and PbZr0.2Ti0.8O3 layers has inhibited this polydomain formation. A strong decrease in the tetragonality indicates clearly that the polarization state in these superlattices has changed due to the insertion of the SrTiO3 layers. A purely elastic mechanism does not seem to explain the determined structural parameters
Published: 2011
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91. Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals

Author: Deborah Dompoint, Jacek Jagielski, Didier Chaussende, A. Debelle, Lionel Thomé, Alexandre Boulle, Frédérico Garrido, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), CSNSM PCI, Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institute of Electronic Materials Technology (IEMT), Institute of Electronic Materials Technology, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), and The Andrzej Soltan Institute for Nuclear Studies
Subjects: Materials science, Acoustics and Ultrasonics, Elastic energy, Analytical chemistry, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Rutherford backscattering spectrometry, Channelling, Microstructure, 01 natural sciences, Synchrotron, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Amorphous solid, Ion, Crystallography, law, 0103 physical sciences, Irradiation, 010306 general physics, 0210 nano-technology, PACS numbers: 6180Jh, 6185+p, 6105cp, 6172-y, 8105Je
Abstract: 6H-SiC and 3C-SiC single crystals were simultaneously irradiated at room temperature with 100 keV Fe ions at fluences up to 4 × 1014 cm−2 (∼0.7 dpa), i.e. up to amorphization. The disordering behaviour of both polytypes has been investigated by means of Rutherford backscattering spectrometry in the channelling mode and synchrotron x-ray diffraction. For the first time, it is experimentally demonstrated that the general damage build-up is similar in both polytypes. At low dose, irradiation induces the formation of small interstitial-type defects. With increasing dose, amorphous domains start to form at the expense of the defective crystalline regions. Full amorphization of the irradiated layer is achieved at the same dose (∼0.45 dpa) for both polytypes. It is also shown that the interstitial-type defects formed during the first irradiation stage induce a tensile elastic strain (up to ∼4.0%) with which is associated an elastic energy. It is conjectured that this stored energy destabilizes the current defective microstructure observed at low dose and stimulates the formation of the amorphous nanostructures at higher dose. Finally, the disorder accumulation has been successfully reproduced with two models (namely multi-step damage accumulation and direct-impact/defect-stimulated). Results obtained from this modelling are compared and discussed in the light of experimental data.
Published: 2010
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92. Strain profile determination in ion implanted single crystals using generalized simulated annealing

Author: Alexandre Boulle, Aurélien Debelle, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, Materials science, Strain (chemistry), Monte Carlo method, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, Dynamical theory of diffraction, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, General Biochemistry, Genetics and Molecular Biology, Ion, Crystallography, Error function, 0103 physical sciences, Simulated annealing, 010306 general physics, 0210 nano-technology, Yttria-stabilized zirconia
Abstract: A novel least-squares fitting procedure is presented that allows the retrieval of strain profiles in ion-implanted single crystals using high-resolution X-ray diffraction. The model is based on the dynamical theory of diffraction, including a B-spline-based description of the lattice strain. The fitting procedure relies on the generalized simulated annealing algorithm which, contrarily to most common least-squares fitting-based methods, allows the global minimum of the error function (the difference between the experimental and the calculated curves) to be found extremely quickly. It is shown that convergence can be achieved in a few hundred Monte Carlo steps,i.e.a few seconds. The method is model-independent and allows determination of the strain profile even without any `guess' regarding its shape. This procedure is applied to the determination of strain profiles in Cs-implanted yttria-stabilized zirconia (YSZ). The strain and damage profiles of YSZ single crystals implanted at different ion fluences are analyzed and discussed.
Published: 2010
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93. Properties of LiNbO3 based heterostructures grown by pulsed-laser deposition for optical waveguiding application

Author: S. Kilburger, C. Di Bin, René Guinebretière, Eric Millon, P. Di Bin, Alexandre Boulle, Laboratoire de Spectrométrie de Masse et de Chimie Laser (LSMCL), Université Paul Verlaine - Metz (UPVM), PHOTONIQUE, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and MINACOM
Subjects: Materials science, Optical waveguide, Thin films, Lithium niobate, 02 engineering and technology, Epitaxy, 01 natural sciences, Pulsed laser deposition, chemistry.chemical_compound, Optics, Electrical resistivity and conductivity, 0103 physical sciences, Materials Chemistry, Thin film, 010302 applied physics, business.industry, Metals and Alloys, Heterojunction, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Sapphire, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Optical losses, Pulsed-laser deposition, 0210 nano-technology, business, Layer (electronics)
Abstract: International audience; Epitaxial LiNbO3 (LN) thin films have been grown onto (00.1) Al2O3 substrates and onto sapphire covered with a conductive ZnO buffer layer. For the two systems, the LN thin films are well crystallised and highly (00.1) oriented. Epitaxial relationships between the different layers are evidenced both on the LN/sapphire film and the LN/ZnO/sapphire heterostructure. The optical waveguiding propagation losses of the LN/ sapphire films are very low (1±0.5 dB/cm) while the LN/ZnO/sapphire heterostructure does not exhibit satisfying waveguiding properties mainly due to the high conductivity (600 S m−1) of the ZnO buffer layer.
Published: 2010
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94. A new way to prepare tin oxide precursor polymeric gels

Author: Wael Hamd, Alexandre Boulle, René Guinebretière, Elsa Thune, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM)
Subjects: Materials science, Base (chemistry), Inorganic chemistry, Gelation time, Infrared spectroscopy, 02 engineering and technology, Sol–gel, 010402 general chemistry, 01 natural sciences, Role of toluene, Biomaterials, chemistry.chemical_compound, Materials Chemistry, Fourier transform infrared spectroscopy, Sol-gel, chemistry.chemical_classification, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Tin oxide, Toluene, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Solvent, chemistry, Volume fraction, Ceramics and Composites, 0210 nano-technology, Nuclear chemistry
Abstract: International audience; Transparent tin oxide gels are elaborated in the isopropoxide/toluene/isopropanol system. The gelation occurs at room temperature without any acid or base additions. The formation of the SnO2 precursor gels polymeric network is evidenced by Fourier transform infrared spectroscopy. The gelation time is studied as a function of the complexing ratio R = [acac]/[Sn(OR)4], the hydrolysis ratio W = [H2O]/[Sn(OR)4], the concentration of tin oxide precursor C = [Sn(OR)4], and the volume fraction of toluene P = (toluene volume) / (total solvent volume).
Published: 2010
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95. Quantitative analysis of diffuse X-ray scattering in partially transformed 3C-SiC single crystals

Author: I.G. Galben-Sandulache, Didier Chaussende, Deborah Dompoint, Alexandre Boulle, Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Phase transition, Materials science, Scattering, business.industry, Stacking, X-ray, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Polarization (waves), Kinetic energy, 01 natural sciences, Molecular physics, General Biochemistry, Genetics and Molecular Biology, Optics, 0103 physical sciences, Partial dislocations, 0210 nano-technology, Structure factor, business
Abstract: The X-ray scattering of partially transformed 3C-SiC single crystals is considered in detail. Extended diffuse scattering streaks, originating from stacking faults (SFs) lying in the {111} planes, are clearly observed in the wide-range reciprocal-space maps. The intensity distribution along the diffuse streaks is simulated with a model including the contributions of the diffuse scattering originating from the SFs [based on the pioneering theoretical description given by Kabra, Pandey & Lele (1986).J. Mater. Sci.21, 1654–1666], the coherent scattering emanating from untransformed areas of the crystals and all θ-dependent terms that affect the scattered intensity (the layer structure factor, the irradiated volume and the polarization of the beam). The quantitative simulation of the diffuse streaks reveals that the transformation occurs through the glide of partial dislocations and allows one to derive the transformation level. It is shown that the 3C polytype is indeed unstable at high temperature. However, it is further shown that defect-free 3C-SiC single crystals remain stable at temperatures where 3C-SiC is known to be usually unstable (2173 K). The origin of this apparent stability is very likely of kinetic nature,i.e.the lack of crystalline defects inhibits the transformation.
Published: 2010
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96. Macroscopic and nanoscale electrical properties of pulsed laser deposited (100) epitaxial lead-free Na0.5Bi0.5TiO3 thin films

Author: Paula M. Vilarinho, Alain Catherinot, Alexandre Boulle, Aurelian Crunteanu, A. Wu, Jean-René Duclere, Brice Gautier, Corinne Champeaux, M. Bousquet, David Albertini, Maryline Guilloux-Viry, Pascal Marchet, C. Bachelet, Stéphanie Députier, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Axe 2 : procédés de traitements de surface, Center for Research in Ceramic and Composite Materials (CICECO), Universidade de Aveiro, Institut des Sciences Chimiques de Rennes (ISCR), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), MINACOM, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), European Project, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Misorientation, General Physics and Astronomy, 02 engineering and technology, 01 natural sciences, electric domains, Pulsed laser deposition, crystal orientation, 0103 physical sciences, ferroelectric materials, [CHIM]Chemical Sciences, Thin film, pulsed laser deposition, 010302 applied physics, grain size, Condensed matter physics, leakage currents, dielectric hysteresis, Coercivity, 021001 nanoscience & nanotechnology, Ferroelectricity, Grain size, X-ray diffraction, crystal microstructure, Crystallography, Crystallite, sodium compounds, 0210 nano-technology, Single crystal, piezoelectric thin films, ferroelectric thin films, Bismuth compounds
Abstract: International audience; Epitaxial Na0.5Bi0.5TiO3 thin films presenting various thicknesses were grown by pulsed laser deposition on epitaxial 100 platinum bottom layers supported by 100MgO single crystal substrates. X-ray diffraction data indicated that all Na0.5Bi0.5TiO3 layers are single-phased and that 100-oriented Na0.5Bi0.5TiO3 NBT crystallites are extremely predominant. The thinner films respectively 230 and 400 nm display a quasiunique 100 orientation close to 100%, whereas for the thickest film 610 nm, the proportion of 100-oriented Na0.5Bi0.5TiO3 crystallites decreases to 85.50 vol %. Such variation is supposed to result from the degree of misorientation of the Pt layer. Further x-ray investigations revealed a pronounced asymmetry of the 100NBT reflection. Such asymmetry is also observed in the 310NBT reciprocal space maps. The analysis of the asymmetrical broadening of the reciprocal lattice point suggests a variation in the chemical composition across the samples thickness, in agreement with comparative Rutherford backscattering spectroscopy RBS data. In addition, x-ray diffraction -scans data indicate the systematic epitaxial growth of the 100-oriented crystallites. The observation of the microstructure of Na0.5Bi0.5TiO3 films completely corroborates the x-ray diffraction information. Whereas the two thinnest films are characterized by the presence of only one type of grains: i.e., very fine and spherical grains around 50-100 nm in size, the thickest film is characterized by the presence of two types of grains: the aforementioned one and some elongated and "factory roof"-like grains. Thus, we unambiguously attribute that the spherical grains correspond to 100-oriented crystallites, whereas the "factory roof"-like grains are 110-oriented. The room temperature macroscopic ferroelectric properties were measured only for the thickest film. A rather well-defined shape of the polarization-electric P-E field hysteresis loops was recorded, and a vertical drift of the loops was systematically observed. Recentering the hysteresis loops leads to a Pr value of 12.6 C/cm2, associated to a coercive field of about 94 kV/cm. This P-E vertical drift originates from the very asymmetric conduction of the Pt/NBT/Pt capacitors at different polarities, as testified by the current density-electric field curves. Such drift can be caused by the existence of different barrier heights at the bottom and top Pt/Na0.5Bi0.5TiO3 interfaces. In addition, based on the combined RBS and x-ray data, we suggest that the chemical composition variation across the layer also impacts on the polarization vertical drift. Finally, the nanoscale electrical properties of the thinnest film have been characterized by both tunneling atomic force microscopy TUNA and piezoforce microscopy PFM. The TUNA data revealed that leakage currents cannot be noticeably detected below 8 or 10 V, in negative or positive biases, respectively. The PFM data showed that most of the grains seem to be constituted of single ferroelectric domains. In addition, the recorded d33 piezoloops are strongly distorted, and systematically remain in the vertical positive side, in agreement with the vertical drift observed for the macroscopic ferroelectric data. The presence of self-polarization within our thinnest film is finally invoked, and supported by some piezohistogram, in order to justify the distorted shape of the loops as well as the supplementary horizontal shift.
Published: 2010
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97. Role of nanostructure on the optical waveguiding properties of epitaxial LiNbO 3 films

Author: Alexandre Boulle, Eric Millon, S. Kilburger, C. Di Bin, Annie Bessaudou, René Guinebretière, P. Di Bin, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Axe 3 : organisation structurale multiéchelle des matériaux, Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), PHOTONIQUE, Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and MINACOM
Subjects: 010302 applied physics, Nanostructure, Materials science, Acoustics and Ultrasonics, business.industry, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Mosaicity, Nanocrystalline material, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Pulsed laser deposition, Surface coating, Reciprocal lattice, Optics, 0103 physical sciences, X-ray crystallography, Optoelectronics, Thin film, 0210 nano-technology, business
Abstract: International audience; High quality LiNbO 3 (LN) epitaxial films have been grown onto (001)Al 2 O 3 substrates by pulsed laser deposition. The deposition conditions have been optimized using experimental designs to promote the growth of highly (001)-oriented, phase pure and light-guiding LN films. The structural and nanostructural properties have been investigated by X-ray diffraction reciprocal space mapping and the guiding properties have been investigated by m-line spectroscopy and measurements of the light propagation losses. In particular it is shown that the film composition, the state of strain, the film thickness, the film roughness, the lateral extension of the crystallites building up the film as well as the mosaicity can be determined by a careful examination of the X-ray reciprocal space maps associated with simulation of the diffracted intensity distribution in reciprocal space. The guiding properties have been correlated with the nanostructural properties of the films: whereas light guiding has been clearly observed in single crystal-like films, the existence of a mosaic structure, made of nanocrystalline domains, is shown to be detrimental to the guiding properties.
Published: 2009
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98. The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering

Author: Alexandre Boulle, Irina G. Galben-Sandulache, Didier Chaussende, J. Aubé, Axe 3 : organisation structurale multiéchelle des matériaux, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), SPCS, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: phase transformations, silicon compounds, slip, stacking faults, wide band gap semiconductors, X-ray scattering, Materials science, Physics and Astronomy (miscellaneous), Semiconductor materials, 02 engineering and technology, Slip (materials science), 01 natural sciences, Molecular physics, slip, Condensed Matter::Materials Science, 0103 physical sciences, phase transformations, stacking faults, 010302 applied physics, wide band gap semiconductors, Scattering, Wide-bandgap semiconductor, X-ray, [CHIM.MATE]Chemical Sciences/Material chemistry, X-ray scattering, 021001 nanoscience & nanotechnology, Crystallography, Diffuse scattering, X-ray crystallography, Partial dislocations, 0210 nano-technology, silicon compounds
Abstract: International audience; The 3C-6H polytypic transition in SiC single crystals is studied by means of diffuse x-ray scattering. Based on numerical simulations of the diffuse scattering intensity distribution we unambiguously prove that the 3C-6H transition in SiC occurs through the glide of partial dislocations and not by the "layer displacement" mechanism ͑i.e., local diffusional rearrangement of the Si and C atoms͒. The technique is extremely sensitive and can be used as a nondestructive mean to obtain statistically relevant values of the transition level down to ϳ0.05%.
Published: 2009
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99. Microstructural study of SnO2 thin layers deposited on sapphire by sol gel dip coating

Author: Yu Chun Wu, Alexandre Boulle, René Guinebretière, Wael Hamd, Elsa Thune, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM)
Subjects: Materials science, Annealing (metallurgy), chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Dip-coating, law.invention, Annealing, Atomic force microscopy, law, 0103 physical sciences, Materials Chemistry, Thin film, Crystallization, Microstructure, 010302 applied physics, Surface diffusion, Metals and Alloys, Sol–gel deposition, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Tin oxide, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, X-ray diffraction, Grain growth, Crystallography, Chemical engineering, chemistry, 0210 nano-technology, Tin
Abstract: International audience; Tin oxide (SnO2) films have been grown onto (006) sapphire substrates by sol–gel dip-coating using tin alkoxide solutions. It is shown, using grazing-incidence X-ray diffraction, reciprocal space mapping and atomic force microscopy, that thermal annealing at 500 °C induces the crystallization of SnO2 in the rutiletype phase. Further annealing treatments at temperatures lower than 1100 °C give rise to slow grain growth controlled by surface diffusion, whereas rapid grain growth (controlled by an evaporation–condensation mechanism) takes place at temperatures higher than 1100 °C. Concomitantly, the film splits into isolated islands and a fibre texture occurs at higher temperatures.
Published: 2009
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100. Synthesis of tin oxide nanosized crystals embedded in silica matrix through sol–gel process using alkoxide precursors

Author: René Guinebretière, Wael Hamd, Yu Chun Wu, Elsa Thune, Alexandre Boulle, Cyrille Rochas, Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux, Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Centre de Recherches sur les Macromolécules Végétales (CERMAV), and Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)
Subjects: Materials science, Glass ceramics, Nanoparticle, Mineralogy, chemistry.chemical_element, 02 engineering and technology, Nano-composites, 010402 general chemistry, 01 natural sciences, law.invention, chemistry.chemical_compound, law, Materials Chemistry, Crystallization, Fourier transform infrared spectroscopy, Sol-gel, Silica gel, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Tin oxide, equipment and supplies, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Nanocrystals, X-ray diffraction, chemistry, Chemical engineering, FTIR measurements, Alkoxide, Ceramics and Composites, Nucleation, Sol–gels (xerogels), 0210 nano-technology, Tin
Abstract: International audience; Materials made of tin oxide nanocrystals homogeneously dispersed into a silica glass matrix have been elaborated through sol–gel processing. Addition of strong acids was used to control the hydrolysis–condensation in tin and silicon alkoxides mixed alcoholic solutions. Fourier transform infrared spectroscopy (FTIR) and Small angle X-ray scattering (SAXS) measurements show that the introduction of HCl allows to synthesize gels containing up to 50% of tin oxide precursor without significant modification of the pure silica gel network. Thermal treatments of slowly dried bulk gels induce the crystallization of tin oxide nanoparticles. After firing at 1000 C, dense materials containing tin oxide nanocrystals (with a mean diameter close to 1–2 nm) are obtained. The crystal size distribution was estimated by X-ray diffraction line profile analysis. The narrowness of this distribution makes these materials interesting for optical applications.
Published: 2009
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