51. Comparison of oxide leakage currents induced by ion implantation and high field electric stress
- Author
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J. M. Moragues, Alain Bravaix, P Lambert, Didier Goguenheim, Philippe Boivin, Yncréa Méditerrané, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and STMicroelectronics [Rousset] (ST-ROUSSET)
- Subjects
Materials science ,C-V ,Analytical chemistry ,Oxide ,oxide layer ,Leakage currents ,MOSFET ,[SPI]Engineering Sciences [physics] ,chemistry.chemical_compound ,Thermal ,Electrical and Electronic Engineering ,Safety, Risk, Reliability and Quality ,Quantum tunnelling ,Leakage (electronics) ,business.industry ,Condensed Matter Physics ,SILC ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Ion implantation ,chemistry ,Stress Induced Leakage Currents ,Optoelectronics ,thermal anneal ,High field ,tunneling mechanisms ,business ,Forming gas - Abstract
International audience; We compare in this work, the electrical properties of gate leakage currents induced through the thin SiO2 oxide layer of metal-oxide-semiconductor structures by high energy ion implantation and high field stresses. Even if the high-frequency capacitance-voltage characteristics are very different after both treatments, a comparable increase and similar shapes are found at low fields in static gate current–voltage curves, typical of equivalent oxide damage. Moreover, these stress or implantation induced leakage currents (SILC or IILC, respectively) are both removed in a similar way by a thermal anneal under forming gas at 430°C. We conclude that similar defects could be induced through the oxide by both processes and generate those excess currents by a defect assisted tunneling mechanism.
- Published
- 2000