51. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
- Author
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Hee-Suk Chung, Jung Dae Kwon, Byung Jin Cho, Dongho Kim, Sangwon Park, Ji Hyeon Park, Pulickel M. Ajayan, Dongjae Kim, Jaewook Nam, Kyu Hwan Lee, Myung Gwan Hahm, Sun Young Choi, Sung Mook Choi, Yonghun Kim, Ah Ra Kim, Jucheol Park, and Byoung Hun Lee
- Subjects
Materials science ,Fabrication ,Bioengineering ,Nanotechnology ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,law.invention ,Metal ,law ,General Materials Science ,business.industry ,Mechanical Engineering ,Transistor ,Doping ,Heterojunction ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Metal semiconductor ,0104 chemical sciences ,visual_art ,Potential barrier height ,visual_art.visual_art_medium ,Optoelectronics ,0210 nano-technology ,business ,Layer (electronics) - Abstract
Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1–xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices.
- Published
- 2016