71 results on '"Abbondanza, Giuseppe"'
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52. 3C-SiC Film Growth on Si Substrates
53. Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios
54. Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
55. 3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
56. Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si
57. Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
58. Thick Epitaxial Layers Growth by Chlorine Addition
59. Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures
60. SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
61. Void Formation in Differently Oriented Si in the Early Stage of SiC Growth
62. Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
63. 3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
64. Heteroepitaxial Growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) Substrates
65. Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
66. High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization
67. Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes.
68. High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization.
69. OperandoReflectance Microscopy on Polycrystalline Surfaces in Thermal Catalysis, Electrocatalysis, and Corrosion
70. Operando XANES Reveals the Chemical State of Iron-Oxide Monolayers During Low-Temperature CO Oxidation.
71. The Oxygen Evolution Reaction Drives Passivity Breakdown for Ni-Cr-Mo Alloys.
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