Search

The atomically thin 2D nature of suspended graphene membranes holds promising in numerous technological applications. In particular, the outstanding transparency to electron beam endows graphene membranes great potential as a candidate for specimen support of transmission electron microscopy (TEM). However, major hurdles remain to be addressed to acquire an ultraclean, high-intactness, and defect-free suspended graphene membrane. Here, a polymer-free clean transfer of sub-centimeter-sized graphene single crystals onto TEM grids to fabricate large-area and high-quality suspended graphene membranes has been achieved. Through the control of interfacial force during the transfer, the intactness of large-area graphene membranes can be as high as 95%, prominently larger than reported values in previous works. Graphene liquid cells are readily prepared by π-π stacking two clean single-crystal graphene TEM grids, in which atomic-scale resolution imaging and temporal evolution of colloid Au nanoparticles are recorded. This facile and scalable production of clean and high-quality suspended graphene membrane is promising toward their wide applications for electron and optical microscopy., (© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Silicon-based materials are considered as strong candidates to next-generation lithium ion battery anodes because of their ultrahigh specific capacities. However, the pulverization and delamination of electrochemical active materials originated from the huge volume expansion (>300%) of silicon during the lithiation process results in rapid capacity fade, especially in high mass loading electrodes. Here we demonstrate that direct chemical vapor deposition (CVD) growth of vertical graphene nanosheets on commercial SiO microparticles can provide a stable conducting network via interconnected vertical graphene encapsulation during lithiation, thus remarkably improving the cycling stability in high mass loading SiO anodes. The vertical graphene encapsulated SiO (d-SiO@vG) anode exhibits a high capacity of 1600 mA h/g and a retention up to 93% after 100 cycles at a high areal mass loading of 1.5 mg/cm 2 . Furthermore, 5 wt % d-SiO@vG as additives increased the energy density of traditional graphite/NCA 18650 cell by ∼15%. We believe that the results strongly imply the important role of CVD-grown vertical graphene encapsulation in promoting the commercial application of silicon-based anodes.

Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac Fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on electrical and magnetotransport measurements of high-quality graphitic nitrogen-doped graphene. We show that the substitutional nitrogen dopants in graphene introduce atomically sharp scatters for electrons but long-range Coulomb scatters for holes and, thus, graphitic nitrogen-doped graphene exhibits clear electron-hole asymmetry in transport properties. Dominant scattering processes of charge carriers in graphitic nitrogen-doped graphene are analyzed. It is shown that the electron-hole asymmetry originates from a distinct difference in intervalley scattering of electrons and holes. We have also carried out the magnetotransport measurements of graphitic nitrogen-doped graphene at different temperatures and the temperature dependences of intervalley scattering, intravalley scattering, and phase coherent scattering rates are extracted and discussed. Our results provide an evidence for the electron-hole asymmetry in the intervalley scattering induced by substitutional nitrogen dopants in graphene and shine a light on versatile and potential applications of graphitic nitrogen-doped graphene in electronic and valleytronic devices.

We previously explored the role of BTK in maintaining multiple myeloma stem cells (MMSCs) self-renewal and drug-resistance. Here we investigated the elevation of BTK suppressing MM cellular senescence, a state of irreversible cellular growth arrest. We firstly discovered that an increased expression of BTK in MM samples compared to normal controls by immunohistochemistry (IHC), and significant chromosomal gain in primary samples. In addition, BTK high-expressing MM patients are associated with poor outcome in both Total Therapy 2 (TT2) and TT3 cohorts. Knockdown BTK expression by shRNA induced MM cellular senescence using β-galactosidase (SA-b-gal) staining, cell growth arrest by cell cycle staining and decreased clonogenicity while forcing BTK expression in MM cells abrogated these characteristics. We also validated this feature in mouse embryonic fibroblast cells (MEFs), which showed that elevated BTK expression was resistant to MEF senescence after serial cultivation in vitro . Further mechanism study revealed that BTK activated AKT signaling leading to down-regulation of P27 expression and hindered RB activity while AKT inhibitor, LY294002, overcame BTK-overexpression induced cellular senescence resistance. Eventually we demonstrated that BTK inhibitor, CGI-1746, induced MM cellular senescence, colony reduction and tumorigenecity inhibition in vivo . Summarily, we designate a novel mechanism of BTK in mediating MM growth, and BTK inhibitor is of great potential in vivo and in vitro suggesting BTK is a promising therapeutic target for MM., Competing Interests: CONFLICTS OF INTEREST None of the authors above has disclosed a conflicts of interest with this submission.

Non-neutral layered crystals, another group of two-dimensional (2D) materials that lack a well-defined van der Waals (vdWs) gap, are those that form strong chemical bonds in-plane but display weak out-of-plane electrostatic interactions, exhibiting intriguing properties for the bulk counterpart. However, investigation of the properties of their atomically thin counterpart are very rare presumably due to the absence of efficient ways to achieve large-area high-quality 2D crystals. Here, high-mobility atomically thin Bi 2 O 2 Se, a typical non-neutral layered crystal without a standard vdWs gap, was synthesized via a facial chemical vapor deposition (CVD) method, showing excellent controllability for thickness, domain size, nucleation site, and crystal-phase evolution. Atomically thin, large single crystals of Bi 2 O 2 Se with lateral size up to ∼200 μm and thickness down to a bilayer were obtained. Moreover, optical and electrical properties of the CVD-grown 2D Bi 2 O 2 Se crystals were investigated, displaying a size-tunable band gap upon thinning and an ultrahigh Hall mobility of >20000 cm 2 V -1 s -1 at 2 K. Our results on the high-mobility 2D Bi 2 O 2 Se semiconductor may activate the synthesis and related fundamental research of other non-neutral 2D materials.

Nanostructures of ternary topological insulator (TI) Bi 2 Te 2 Se are, in principle, advantageous to the manifestation of topologically nontrivial surface states, due to significantly enhanced surface-to-volume ratio compared with its bulk crystals counterparts. Herein, the synthesis of 2D Bi 2 Te 2 Se crystals on mica via the van der Waals epitaxy method is explored and systematically the growth behaviors during the synthesis process are investigated. Accordingly, 2D Bi 2 Te 2 Se crystals with domain size up to 50 µm large and thickness down to 2 nm are obtained. A pronounced weak antilocalization effect is clearly observed in the 2D Bi 2 Te 2 Se crystals at 2 K. The method for epitaxial growth of 2D ternary Bi 2 Te 2 Se crystals may inspire materials engineering toward enhanced manifestation of the subtle surface states of TIs and thereby facilitate their potential applications in next-generation spintronics., (© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

The formation of grain boundaries (GBs) in graphene films is both fundamentally interesting and practically important for many applications. A GB in graphene is known as a linear defect and is formed during the coalescence of two single crystalline graphene domains. The covalent binding between domains is broadly known as the mechanism of GB formation during graphene chemical vapor deposition (CVD) growth. Here, we demonstrate another GB formation mechanism, where two graphene domains are connected by weak van der Waals interactions between overlapping graphene layers. The formation mechanism of the overlapping GBs (OLGBs) is systematically explored theoretically and the proposed conditions for forming OLGBs are validated by experimental observations. This discovery leads to a deep understanding of the mechanism of graphene CVD growth and reveals potential means for graphene quality control in CVD synthesis.

Two-dimensional (2D) layered hybrid perovskites of (RNH 3 ) 2 PbX 4 (R is an alkyl and X is a halide) have been recently synthesized and exhibited rich optical properties including fluorescence and exciton effects. However, few studies on transport and optoelectronic measurements of individual 2D perovskite crystals have been reported, presumably owing to the instability issue during electronic device fabrications. Here we report the first photodetector based on individual 2D (C 4 H 9 NH 3 ) 2 PbBr 4 perovskite crystals, built with the protection and top contact of graphene film. Both a high responsivity (∼2100 A/W) and extremely low dark current (∼10 -10 A) are achieved with a design of interdigital graphene electrodes. Our study paves the way to build high-performance optoelectronic devices based on the emerging 2D single-crystal perovskite materials.

Magnetic resonance imaging (MRI) compatible neural electrodes are important for combining high-resolution electrophysiological measurements with more global MRI mapping of brain activity, which is critical for fundamental neuroscience studies, as well as clinical evaluation and monitoring. Copper is a favorable material to use in MRI because it has magnetic susceptibility close to water and tissues. However, the cytotoxicity of copper precludes its direct implantation for neural recording. Here, we overcome this limitation by developing a graphene encapsulated copper (G-Cu) microelectrode. The toxicity of copper is largely eliminated, as evidenced by the in vitro cell tests and in vivo histology studies. Local field potentials and single-unit spikes were recorded from rodent brains with the G-Cu microelectrodes. Notably, the G-Cu microelectrodes show no image artifacts in a 7.0 T MRI scanner, indicating minimal magnetic field distortion in their vicinity. This high MRI compatibility of our G-Cu probes would open up new opportunities for fundamental brain activity studies and clinical applications requiring continuous MRI and electrophysiological recordings.

The key challenge of direct integration of two-dimensional (2D) chalcogenide crystals into functional modules is precise control of the nucleation sites of the building blocks. Herein, we exploit the chemical activities and surface engineering of the substrates to manipulate the nucleation energy barrier of 2D crystals and thereby realize the patternable growth of 2D crystals. The selective-region chemical modifications of the substrates are achieved via microcontact printing combined with the elegant self-assembly of octadecyltrichlorosilane molecules on the substrates. The patternable growth method is versatile and can be used as a general strategy for growing a broad class of high-quality 2D chalcogenide crystals with tailorable configurations on a variety of chemically engineered substrates. Moreover, we demonstrate flexible transparent electrodes based on large-scale patterned nanogrids of topological insulator Bi 2 Se 3 , which possess tailored trade-off between electric conductivity and optical transmittance across the visible to near-infrared regime. We hope this method may open an avenue to the efficient integration and batch production of 2D chalcogenide crystals and could inspire ongoing efforts of the fabrication of van der Waals heterostructures.

Graphene has a range of unique physical properties and could be of use in the development of a variety of electronic, photonic and photovoltaic devices. For most applications, large-area high-quality graphene films are required and chemical vapour deposition (CVD) synthesis of graphene on copper surfaces has been of particular interest due to its simplicity and cost effectiveness. However, the rates of growth for graphene by CVD on copper are less than 0.4 μm s -1 , and therefore the synthesis of large, single-crystal graphene domains takes at least a few hours. Here, we show that single-crystal graphene can be grown on copper foils with a growth rate of 60 μm s -1 . Our high growth rate is achieved by placing the copper foil above an oxide substrate with a gap of ∼15 μm between them. The oxide substrate provides a continuous supply of oxygen to the surface of the copper catalyst during the CVD growth, which significantly lowers the energy barrier to the decomposition of the carbon feedstock and increases the growth rate. With this approach, we are able to grow single-crystal graphene domains with a lateral size of 0.3 mm in just 5 s.

Wafer-sized single-crystalline Cu (100) surface can be readily achieved on stacked polycrystalline Cu foils via simple oxygen chemisorption-induced reconstruction, enabling fast growth of large-scale millimeter-sized single-crystalline graphene arrays under molecular flow. The maximum growth rate can reach 300 μm min -1 , several orders of magnitude higher than previously reported values for millimeter-sized single-crystalline graphene growth on Cu foils., (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Twisted bilayer graphene (tBLG) with van Hove Singularity (VHS) has exhibited novel twist-angle-dependent chemical and physical phenomena. However, scalable production of high-quality tBLG is still in its infancy, especially lacking the angle controlled preparation methods. Here, we report a facile approach to prepare tBLG with large domain sizes (>100 μm) and controlled twist angles by a clean layer-by-layer transfer of two constituent graphene monolayers. The whole process without interfacial polymer contamination in two monolayers guarantees the interlayer interaction of the π-bond electrons, which gives rise to the existence of minigaps in electronic structures and the consequent formation of VHSs in density of state. Such perturbation on band structure was directly observed by angle-resolved photoemission spectroscopy with submicrometer spatial resolution (micro-ARPES). The VHSs lead to a strong light-matter interaction and thus introduce ∼20-fold enhanced intensity of Raman G-band, which is a characteristic of high-quality tBLG. The as-prepared tBLG with strong light-matter interaction was further fabricated into high-performance photodetectors with selectively enhanced photocurrent generation (up to ∼6 times compared with monolayer in our device).

Being atomically thin, graphene-based p-n junctions hold great promise for applications in ultrasmall high-efficiency photodetectors. It is well-known that the efficiency of such photodetectors can be improved by optimizing the chemical potential difference of the graphene p-n junction. However, to date, such tuning has been limited to a few hundred millielectronvolts. To improve this critical parameter, here we report that using a temperature-controlled chemical vapor deposition process, we successfully achieved modulation-doped growth of an alternately nitrogen- and boron-doped graphene p-n junction with a tunable chemical potential difference up to 1 eV. Furthermore, such p-n junction structure can be prepared on a large scale with stable, uniform, and substitutional doping and exhibits a single-crystalline nature. This work provides a feasible method for synthesizing low-cost, large-scale, high efficiency graphene p-n junctions, thus facilitating their applications in optoelectronic and energy conversion devices.

We report on low-temperature transport measurements on four-terminal cross junction devices fabricated from high-quality graphene grown by chemical vapor deposition. At high magnetic fields, the bend resistance reveals pronounced peak structures at the quantum Hall plateau transition, which can be attributed to the edge state transport through the junctions. We further demonstrate that the bend resistance is drastically affected by the presence of local impurity states in the junction regions, and exhibits an unusual asymmetric behavior with respect to the magnetic field direction. The observations can be understood in a model taking into account the combination of the edge transport and an asymmetric scatterer. Our results demonstrate that a graphene cross junction may serve as a sensitive probe of local impurity states in graphene at the nanoscale.

A second passivation and a multistage carbon-source supply (CSS) allow a 50-fold enhancement of the growth rate of large single-crystalline graphene with a record growth rate of 101 μm min(-1) , almost 10 times higher than for pure copper. To this end the CSS is tailored at separate stages of graphene growth on copper foil, combined with an effective suppression of new spontaneous nucleation via second passivation., (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

The growth of high-quality two-dimensional (2D) layered chalcogenide crystals is highly important for practical applications in future electronics, optoelectronics, and photonics. Current route for the synthesis of 2D chalcogenide crystals by vapor deposition method mainly involves an energy intensive high-temperature growth process on solid substrates, often suffering from inhomogeneous nucleation density and grain size distribution. Here, we first demonstrate a facile vapor-phase synthesis of large-area high-quality 2D layered chalcogenide crystals on liquid metal surface with relatively low surface energy at a growth temperature as low as ∼100 °C. Uniform and large-domain-sized 2D crystals of GaSe and GaxIn1-xSe were grown on liquid metal surface even supported on a polyimide film. As-grown 2D GaSe crystals have been fabricated to flexible photodetectors, showing high photoresponse and excellent flexibility. Our strategy of energy-sustainable low-temperature growth on liquid metal surface may open a route to the synthesis of high-quality 2D crystals of Ga-, In-, Bi-, Hg-, Pb-, or Sn-based chalcogenides and halides.

The controlled growth of high-quality graphene on a large scale is of central importance for applications in electronics and optoelectronics. To minimize the adverse impacts of grain boundaries in large-area polycrystalline graphene, the synthesis of large single crystals of monolayer graphene is one of the key challenges for graphene production. Here, we develop a facile surface-engineering method to grow large single-crystalline monolayer graphene by the passivation of the active sites and the control of graphene nucleation on copper surface using the melamine pretreatment. Centimeter-sized hexagonal single-crystal graphene domains were successfully grown, which exhibit ultrahigh carrier mobilities exceeding 25,000 cm(2) V(-1) s(-1) and quantum Hall effects on SiO2 substrates. The underlying mechanism of melamine pretreatments were systematically investigated through elemental analyses of copper surface in the growth process of large single-crystals. This present work provides a surface design of a catalytic substrate for the controlled growth of large-area graphene single crystals.

The electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmical decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures.

Metadherin (MTDH) is identified as an oncogene in multiple cancers including breast cancer, bladder cancer and endometrial cancer. However, the function of MTDH in multiple myeloma (MM) is still unexplored. In this study, we disclose that MTDH is an oncogene in MM. This is characterized by an elevation mRNA level of MTDH and chromosomal gain of MTDH locus in MM cells compared to normal samples. Moreover, MTDH expression significantly increased in MMSET translocation (MS) subgroup, one of the high-risk subgroups in MM, and was significantly correlated with MM patients' poor outcomes in Total Therapy 2 (TT2) cohort. Further knockdown of MTDH expression by shRNA in MM cells induced cell apoptosis, inhibited MM cells growth in vitro and decreased xenograft tumor formation in vivo. Interestingly, opposite to TT2, MM patients with high-MTDH expression showed favorable survival outcomes in the TT3 cohort, while Bortezomib treatment was the major difference between TT2 and TT3 cohort. Furthermore we proved that Bortezomib suppressed pre- and post-transcription levels of MTDH expression of MM cells in vitro and in vivo. Finally, our studies demonstrated that MTDH is a transcriptional gene of MMSET/NFκB /MYC signaling in MM cells, which is inhibited by Bortezomib treatment.

The dielectric constant or relative permittivity (ε(r)) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured ε(r) increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.

Controllable synthesis of copper chalcogenide nanocrystals (NCs), including desired geometry, composition and surrounding environment, is of high significance for the modulation of their optoelectronic response and the corresponding applications. Herein, copper nitride nanoparticles have been used as "uncontaminated" copper precursors to synthesize copper chalcogenide NCs with high monodispersity through a one-pot strategy. In this protocol, the sizes and compositions of NCs can be readily controlled by varying the ratio of the precursors. For Cu(2-x)S NCs with different diameters, the size variations are all smaller than 5.6%. Furthermore, the plasmonic properties of the copper chalcogenide NCs are investigated under a steady state by tuning the plasmonic resonance absorption band to a limiting condition (denoted "pinning" phenomena). It is observed that the pinning frequency increases (from 1.09 to 1.23 eV) with the increment of the NC size (from 5.4 ± 0.3 to 11.1 ± 0.4 nm), explained by introducing surface scattering. Meanwhile, the frequencies of ternary alloyed copper sulfide selenide NCs blue-shift from 0.90 to 1.00 eV with the increase of selenium content from 11% to 66%, which is related to the effective mass of free carriers. Additionally, the plasmonic absorption bands of Cu(2-x)S NCs encapsulated by two single-layer graphene pin at 1525-1550 nm during the oxidation process, which is influenced by both the dielectric constant and redox potential of the surrounding environment. This study demonstrates the controllable synthesis and precise fundamental plasmonic properties of the copper chalcogenide NCs, ensuring the potential plasmonic-related techniques with high efficiency, accuracy and excellent spatial resolution.

A novel roll-to-roll, etching-free, clean transfer of CVD-grown graphene from copper to plastic using surface-energy-assisted delamination in hot deionized water is reported. The delamination process is realized by water penetration between the hydrophobic graphene and a hydrophilic native oxide layer on a copper foil.The transferred graphene on plastic is used as a high-output flexible and transparent triboelectric nanogenerator., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Nanocarbon structures such as carbon nanotubes (CNTs) and graphene (G) have been combined with crystalline silicon wafers to fabricate nanocarbon-Si solar cells. Here, we show that the contact between the nanocarbon and Si plays an important role in the solar cell performance. An asymmetrically configured CNT-G composite film was used to create either CNT-Si dominating or G-Si dominating junctions, resulting in obviously different solar cell behavior in pristine state. Typically, solar cells with direct G-Si contacts (versus CNT-Si) exhibit better characteristics due to improved junction quality and larger contact area. On the basis of the composite film, the obtained CNT-G-Si solar cells reach power conversion efficiencies of 14.88% under air mass 1.5, 88 mW/cm2 illumination through established techniques such as acid doping and colloidal antireflection. Engineering the nanocarbon-Si contact is therefore a possible route for further improving the performance of this type of solar cells.

Twisted bilayer graphene (tBLG) exhibits van Hove singularities (VHSs) in the density of states that can be tuned by changing the twist angle (θ), sparking various novel physical phenomena. Much effort has been devoted to investigate the θ-dependent physical properties of tBLG. Yet, the chemical properties of tBLG with VHSs, especially the chemical reactivity, remain unexplored. Here we report the first systematic study on the chemistry of tBLG through the photochemical reaction between graphene and benzoyl peroxide. Twisted bilayer graphene exhibits θ-dependent reactivity, and remarkably enhanced reactivity is obtained when the energy of incident laser matches with the energy interval of the VHSs of tBLG. This work provides an insight on the chemistry of tBLG, and the successful enhancement of chemical reactivity derived from VHS is highly beneficial for the controllable chemical modification of tBLG as well as the development of tBLG based devices.

Broadband transparent electrodes based on 2D hybrid nanostructured Dirac materials between Bi2 Se3 and graphene are synthesized using a chemical vapor deposition (CVD) method. Bi2 Se3 nanoplates are preferentially grown along graphene grain boundaries as "smart" conductive patches to bridge the graphene boundary. These hybrid films increase by one- to threefold in conductivity while remaining highly transparent over broadband wavelength. They also display outstanding chemical stability and mechanical flexibility., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

The group V-VI chalcogenide semiconductors (Bi2 Se3 , Bi2 Te3 , and Sb2 Te3 ) have long been known as thermoelectric materials. Recently, they have been once more generating interest because Bi2 Se3 , Bi2 Te3 and Sb2 Te3 have been crowned as 3D topological insulators (TIs), which have insulating bulk gaps and metallic Dirac surface states. One big challenge in the study of TIs is the lack of high-quality materials with few defects and insulating bulk states. To manifest the topological surface states, it is critical to suppress the contribution from the bulk carriers. Controlled production of TI nanostructures that have a large surface-to-volume ratio is an efficient way to reduce the bulk conductance and to significantly enhance the topological surface conduction. In this review article, the recent progress on the preparation of TI nanostructures is highlighted. Basic production methods for TI nanostructures are introduced in detail. Furthermore, several specific production approaches to reduce the residual bulk carriers from defects are summarized. Finally, the progress and the prospects of the production of TI-based heterostructures, which hold promise in both fundamental study and novel applications are discussed., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Nonlinear effects in two-dimensional (2D) atomic layered materials have recently attracted increasing interest. Phenomena such as nonlinear optical edge response, chiral electroluminescence, and valley and spin currents beyond linear orders have opened up a great opportunity to expand the functionalities and potential applications of 2D materials. Here we report the first observation of strong optical second-harmonic generation (SHG) in monolayer GaSe under nonresonant excitation and emission condition. Our experiments show that the nonresonant SHG intensity of GaSe is the strongest among all the 2D atomic crystals measured up to day. At the excitation wavelength of 1600 nm, the SHG signal from monolayer GaSe is around 1-2 orders of magnitude larger than that from monolayer MoS2 under the same excitation power. Such a strong nonlinear signal facilitates the use of polarization-dependent SHG intensity and SHG mapping to investigate the symmetry properties of this material: the monolayer GaSe shows 3-fold lattice symmetry with an intrinsic correspondence to its geometric triangular shape in our growth condition; whereas the bilayer GaSe exhibits two dominant stacking orders: AA and AB stacking. The correlation between the stacking orders and the interlayer twist angles in GaSe bilayer indicates that different triangular GaSe atomic layers have the same dominant edge configuration. Our results provide a route toward exploring the structural information and the possibility to observe other nonlinear effects in GaSe atomic layers.

Transparent conductive film on plastic substrate is a critical component in low-cost, flexible, and lightweight optoelectronics. Industrial-scale manufacturing of high-performance transparent conductive flexible plastic is needed to enable wide-ranging applications. Here, we demonstrate a continuous roll-to-roll (R2R) production of transparent conductive flexible plastic based on a metal nanowire network fully encapsulated between graphene monolayer and plastic substrate. Large-area graphene film grown on Cu foil via a R2R chemical vapor deposition process was hot-laminated onto nanowires precoated EVA/PET film, followed by a R2R electrochemical delamination that preserves the Cu foil for reuse. The encapsulated structure minimized the resistance of both wire-to-wire junctions and graphene grain boundaries and strengthened adhesion of nanowires and graphene to plastic substrate, resulting in superior optoelectronic properties (sheet resistance of ∼8 Ω sq(-1) at 94% transmittance), remarkable corrosion resistance, and excellent mechanical flexibility. With these advantages, long-cycle life flexible electrochromic devices are demonstrated, showing up to 10000 cycles.

Patterning of high-quality two-dimensional chalcogenide crystals with unique planar structures and various fascinating electronic properties offers great potential for batch fabrication and integration of electronic and optoelectronic devices. However, it remains a challenge that requires accurate control of the crystallization, thickness, position, orientation and layout. Here we develop a method that combines microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal two-dimensional chalcogenides onto transparent insulating mica substrates. Using this approach, we have patterned large-area arrays of two-dimensional single-crystal Bi2Se3 topological insulator with a record high Hall mobility of ∼1,750 cm(2) V(-1) s(-1) at room temperature. Furthermore, our patterned two-dimensional In2Se3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of ∼1,650 A W(-1) at 633 nm. The facile patterning, integration and packaging of high-quality two-dimensional chalcogenide crystals hold promise for innovations of next-generation photodetector arrays, wearable electronics and integrated optoelectronic circuits.

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi(2)Se(3), Bi(2)Te(3), and Sb(2)Te(3) are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi(2)Te(3) and Bi(2)Se(3) nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO(2)/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential.

Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi(2)Se(3) material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi(2)Se(3) nanomaterials with a variety of morphologies. The synthesis of Bi(2)Se(3) nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with approximately 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.

Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon's large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline-amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li(+) ions. We demonstrate here that these core-shell nanowires have high charge storage capacity ( approximately 1000 mAh/g, 3 times of carbon) with approximately 90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, approximately 20 times of carbon at 1 h rate).

The bonding of single diferrocene [Fc(CH(2))(14)Fc, Fc = ferrocenyl] molecules on a metal surface can be enhanced by partial decomposition of Fc groups induced by the tunneling current in scanning tunneling microscopy. Although the isolated intact molecule is mobile on the terrace of Cu(110) at 78 K, the modified molecule is immobilized on the terrace. Calculations based on density functional theory indicate that the hollow site of the Cu(110) surface is the energetically favorable adsorption site for both ferrocene and the Fe-cyclopentadienyl complex, but the latter one possesses a much higher binding energy with the substrate.

Layer-structured group III chalcogenides have highly anisotropic properties and are attractive materials for stable photocathodes and battery electrodes. We report the controlled synthesis and characterization of layer-structured GaSe nanowires via a catalyst-assisted vapor-liquid-solid (VLS) growth mechanism during GaSe powder evaporation. GaSe nanowires consist of Se-Ga-Ga-Se layers stacked together via van der Waals interactions to form belt-shaped nanowires with a growth direction along the [11-20], width along the [1-100], and height along the [0001] direction. Nanobelts exhibit a variety of morphologies including straight, zigzag, and saw-tooth shapes. These morphologies are realized by controlling the growth temperature and time so that the actual catalysts have a chemical composition of Au, Au-Ga alloy, or Ga. The participation of Ga in the VLS catalyst is important for achieving different morphologies of GaSe. In addition, GaSe nanotubes are also prepared by a slow growth process.