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601. Localization of charge carriers in layered crystals MexTiSe2 (Me = Cr, Mn, Cu) studied by the resonant photoemission.

602. Thermal stability of the Cu–ZrTe2 intercalation compounds.

603. Transformation of the crystal structure of Ni 0.5 TiSe 2 under in situ heating.

604. Determination of the Critical Points for Intercalating Systems by the EMF Method Concerning Foreign Metal.

605. Specific features of the electronic structure of Co x TiSe 2 according to the resonant photoemission data.

606. Thermal stability of the layered modification of Cu 0.5 ZrTe 2 in the temperature range 25-900 °C.

607. Electronic structure of ZrX 2 (X = Se, Te).

608. 2D-3D transition in Cu-TiS 2 system.

609. Electronic structure of V x Ti 1-x Se 2 in wide concentration region (0.06 ≤ x ≤ 0.9).

610. Electronic structure of Ni x TiSe 2 (0.05 ≤ x ≤ 0.46) compounds with ordered and disordered Ni.

611. The electronic structure formation of Cu(x)TiSe2 in a wide range (0.04 < x < 0.8) of copper concentration.

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