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Neural interfaces of the future will be used to help restore lost sensory, motor, and other capabilities. However, realizing this futuristic promise requires a major leap forward in how electronic devices interface with the nervous system. Next generation neural interfaces must support parallel recording from tens of thousands of electrodes within the form factor and power budget of a fully implanted device, posing a number of significant engineering challenges. In this paper, we exploit sparsity and diversity of neural signals to achieve simultaneous data compression and channel multiplexing for neural recordings. The architecture uses wired-OR interactions within an array of single-slope A/D converters to obtain massively parallel digitization of neural action potentials. The achieved compression is lossy but effective at retaining the critical samples belonging to action potentials, enabling efficient spike sorting and cell type identification. Simulation results of the architecture using data obtained from primate retina ex-vivo with a 512-channel electrode array show average compression rates up to  ∼ 40× while missing less than 5% of cells. In principle, the techniques presented here could be used to design interfaces to other parts of the nervous system.

Carbon nanotube field-effect transistors (CNFETs) promise to improve the energy efficiency, speed, and transistor density of very large scale integration circuits owing to the intrinsic thin channel body and excellent charge transport properties of carbon nanotubes. Low-temperature fabrication (e.g., <400 °C) is a key enabler for the monolithic three-dimensional (3D) integration of CNFET digital logic into a device technology platform that overcomes memory bandwidth bottlenecks for data-abundant applications such as big-data analytics and machine learning. However, high contact resistance for short CNFET contacts has been a major roadblock to establishing CNFETs as a viable technology because the contact resistance, in series with the channel resistance, reduces the on-state current of CNFETs. Additionally, the variation in contact resistance remains unstudied for short contacts and will further degrade the energy efficiency and speed of CNFET circuits. In this work, we investigate by experiments the contact resistance and statistical variation of room-temperature fabricated CNFET contacts down to 10 nm contact lengths. These CNFET contacts are ∼15 nm shorter than the state-of-the-art Si CMOS "7 nm node" contact length, allowing for multiple generations of future scaling of the transistor-contacted gate pitch. For the 10 nm contacts, we report contact resistance values down to 6.5 kΩ per source/drain contact for a single carbon nanotube (CNT) with a median contact resistance of 18.2 kΩ. The 10 nm contacts reduce the CNFET current by as little as 13% at V DS = 0.7 V compared with the best reported 200 nm contacts to date, corroborated by results in this work. Our analysis of R C from 232 single-CNT CNFETs between the long-contact (e.g., 200 nm) and short-contact (e.g., 10 nm) regimes quantifies the resistance variation and projects the impact on CNFET current variability versus the number of CNT in the transistor. The resistance distribution reveals contact-length-dependent R C variations become significant below 20 nm contact length. However, a larger source of CNFET resistance variation is apparent at all contact lengths used in this work. To further investigate the origins of this contact-length-independent resistance variation, we analyze the variation of R C in arrays of identical CNFETs along a single CNT of constant diameter and observe the random occurrence of high  R C , even on correlated CNFETs.

Dynamic surface wetting of particles in contact with droplet is a complex phenomenon ubiquitously encountered in many multiphase systems of industrial importance. In this study, we address this aspect by investigating impact behavior of a water droplet (diameter = 2.9 ± 0.1 mm) in the Weber number ( We ) range from ~4 to 104 on a stationary spherical brass particle (diameter = 10 mm) with and without heat transfer using a combination of high speed imaging and computational fluid dynamics (CFD) modeling approach. In cold state interactions (20°C), droplet exhibited oscillatory interfacial motion comprising periodic spreading and recoiling motion. Interactions involving heat transfer were studied in film boiling regime (350°C) and two outcomes were noted-droplet rebound and disintegration. A coupled Level Set and Volume of Fluid (VOF) approach based multiphase CFD model was utilized to predict the dynamic spread ratio and transient evolution of droplet shape during the interaction. To capture the complex contact line motion realistically, a continuous time varying profile of experimentally measured dynamic contact angles was used as a wall boundary condition for the cold interactions which provided good agreement with experimentally measured droplet spread ratio. In film boiling regime, droplet spread ratio was correlated to impact Weber number and a power law trend was obtained. Rebound and disintegration outcomes were characterized by the droplet-particle contact time. For simulating interactions in film boiling regime, a constant contact angle in the limit of super-hydrophobic surface was implemented in the CFD model to account for the apparent non-wetting effect due to vapor film formation at the contact area. A sensitivity analysis was performed involving three different contact angle boundary conditions (θ s = 150, 160, and 170°) to represent the surface hydrophobicity. CFD model predicted interaction outcomes and droplet spread ratios were in reasonable agreement with the experiment at different impact Weber numbers. Increase in spherical surface heat flux and corresponding rise in droplet temperature at different impact Weber numbers were also quantified which showed an increasing trend up to a critical Weber number for droplet disintegration.

The computing demands of future data-intensive applications will greatly exceed the capabilities of current electronics, and are unlikely to be met by isolated improvements in transistors, data storage technologies or integrated circuit architectures alone. Instead, transformative nanosystems, which use new nanotechnologies to simultaneously realize improved devices and new integrated circuit architectures, are required. Here we present a prototype of such a transformative nanosystem. It consists of more than one million resistive random-access memory cells and more than two million carbon-nanotube field-effect transistors-promising new nanotechnologies for use in energy-efficient digital logic circuits and for dense data storage-fabricated on vertically stacked layers in a single chip. Unlike conventional integrated circuit architectures, the layered fabrication realizes a three-dimensional integrated circuit architecture with fine-grained and dense vertical connectivity between layers of computing, data storage, and input and output (in this instance, sensing). As a result, our nanosystem can capture massive amounts of data every second, store it directly on-chip, perform in situ processing of the captured data, and produce 'highly processed' information. As a working prototype, our nanosystem senses and classifies ambient gases. Furthermore, because the layers are fabricated on top of silicon logic circuitry, our nanosystem is compatible with existing infrastructure for silicon-based technologies. Such complex nano-electronic systems will be essential for future high-performance and highly energy-efficient electronic systems.

While carbon nanotube (CNT) field-effect transistors (CNFETs) promise high-performance and energy-efficient digital systems, large hysteresis degrades these potential CNFET benefits. As hysteresis is caused by traps surrounding the CNTs, previous works have shown that clean interfaces that are free of traps are important to minimize hysteresis. Our previous findings on the sources and physics of hysteresis in CNFETs enabled us to understand the influence of gate dielectric scaling on hysteresis. To begin with, we validate through simulations how scaling the gate dielectric thickness results in greater-than-expected benefits in reducing hysteresis. Leveraging this insight, we experimentally demonstrate reducing hysteresis to <0.5% of the gate-source voltage sweep range using a very large-scale integration compatible and solid-state technology, simply by fabricating CNFETs with a thin effective oxide thickness of 1.6 nm. However, even with negligible hysteresis, large subthreshold swing is still observed in the CNFETs with multiple CNTs per transistor. We show that the cause of large subthreshold swing is due to threshold voltage variation between individual CNTs. We also show that the source of this threshold voltage variation is not explained solely by variations in CNT diameters (as is often ascribed). Rather, other factors unrelated to the CNTs themselves (i.e., process variations, random fixed charges at interfaces) are a significant factor in CNT threshold voltage variations and thus need to be further improved.

We present a measurement technique, which we call the Pulsed Time-Domain Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and demonstrate its applicability for a broad range of 1D and 2D nanomaterials beyond carbon nanotubes. The Pulsed Time-Domain Measurement enables the quantification (density, energy level, and spatial distribution) of charged traps responsible for hysteresis. A physics-based model of the charge trapping process for a carbon nanotube field-effect transistor is presented and experimentally validated using the Pulsed Time-Domain Measurement. Leveraging this model, we discover a source of traps (surface traps) unique to devices with low-dimensional channels such as carbon nanotubes and nanowires (beyond interface traps which exist in today's silicon field-effect transistors). The different charge trapping mechanisms for interface traps and surface traps are studied based on their temperature dependencies. Through these advances, we are able to quantify the interface trap density for carbon nanotube field-effect transistors (∼3 × 10(13) cm(-2) eV(-1) near midgap), and compare this against a range of previously studied dielectric/semiconductor interfaces.

Carbon nanotube (CNT) field-effect transistors (CNFETs) are a promising emerging technology projected to achieve over an order of magnitude improvement in energy-delay product, a metric of performance and energy efficiency, compared to silicon-based circuits. However, due to substantial imperfections inherent with CNTs, the promise of CNFETs has yet to be fully realized. Techniques to overcome these imperfections have yielded promising results, but thus far only at large technology nodes (1 μm device size). Here we demonstrate the first very large scale integration (VLSI)-compatible approach to realizing CNFET digital circuits at highly scaled technology nodes, with devices ranging from 90 nm to sub-20 nm channel lengths. We demonstrate inverters functioning at 1 MHz and a fully integrated CNFET infrared light sensor and interface circuit at 32 nm channel length. This demonstrates the feasibility of realizing more complex CNFET circuits at highly scaled technology nodes.

We present a technique to increase carbon nanotube (CNT) density beyond the as-grown CNT density. We perform multiple transfers, whereby we transfer CNTs from several growth wafers onto the same target surface, thereby linearly increasing CNT density on the target substrate. This process, called transfer of nanotubes through multiple sacrificial layers, is highly scalable, and we demonstrate linear CNT density scaling up to 5 transfers. We also demonstrate that this linear CNT density increase results in an ideal linear increase in drain-source currents of carbon nanotube field effect transistors (CNFETs). Experimental results demonstrate that CNT density can be improved from 2 to 8 CNTs/μm, accompanied by an increase in drain-source CNFET current from 4.3 to 17.4 μA/μm.

Amine-terminated self-assembled monolayers (SAMs) have been shown to selectively adsorb semiconducting single-walled carbon nanotubes (sc-SWNTs). Previous studies have shown that when deposited by spin coating, the resulting nanotube networks (SWNTnts) can be strongly influenced by the charge state of the amine (primary, secondary, and tertiary). When the amine surfaces were exposed to varying pH solutions, the conductivity and overall quality of the resulting fabricated networks were altered. Atomic force microscopy (AFM) topography had shown that the density of the SWNTnts was reduced as the amine protonation decreased, indicating that the electrostatic attraction between the SWNTs in solution and the surface influenced the adsorption. Simultaneously, μ-Raman analysis had suggested that when exposed to more basic conditions, the resulting networks were enhanced with sc-SWNTs. To directly confirm this enhancement, Ti/Pd contacts were deposited and devices were tested in air. Key device characteristics were found to match the enhancement trends previously observed by spectroscopy. For the primary and secondary amines, on/off current ratios were commensurate with the Raman trends in metallic contribution, while no trends were observed on the tertiary amine (due to weaker interactions). Finally, differing SWNT solution volumes were used to compensate for adsorption differences and yielded identical SWNTnt densities on the various pH-treated samples to eliminate the influence of network density. These results further the understanding of the amine-SWNT interaction during the spin coating process. Overall, we provide a convenient route to provide SWNT-based TFTs with highly tunable electronic charge transport through better understanding of the influence of these specific interactions.

Massive aligned carbon nanotubes hold great potential but also face significant integration/assembly challenges for future beyond-silicon nanoelectronics. We report a wafer-scale processing of aligned nanotube devices and integrated circuits, including progress on essential technological components such as wafer-scale synthesis of aligned nanotubes, wafer-scale transfer of nanotubes to silicon wafers, metallic nanotube removal and chemical doping, and defect-tolerant integrated nanotube circuits. We have achieved synthesis of massive aligned nanotubes on complete 4 in. quartz and sapphire substrates, which were then transferred to 4 in. Si/SiO(2) wafers. CMOS analogous fabrication was performed to yield transistors and circuits with features down to 0.5 mum, with high current density approximately 20 muA/mum and good on/off ratios. In addition, chemical doping has been used to build fully integrated complementary inverter with a gain approximately 5, and a defect-tolerant design has been employed for NAND and NOR gates. This full-wafer approach could serve as a critical foundation for future integrated nanotube circuits.