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1,019 results on '"Fujita, Shizuo"'

751. Electrical Properties 5 : Defects in β-Ga2O3 Crystals and Their Influence on Schottky Barrier Diode Characteristics

Author

Kasu, Makoto, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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752. Field-Effect Transistors 5 : Vertical Ga2O3 Fin-Channel Field-Effect Transistors and Trench Schottky Barrier Diodes

Author

Hu, Zongyang, Li, Wenshen, Xing, Huili Grace, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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753. Field-Effect Transistors 2 : Ga2O3 Field-Effect Transistors for Power Switching and Radiation-Hard Electronics

Author

Wong, Man Hoi, Higashiwaki, Masataka, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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754. Phonon Properties : Phonon and Free Charge Carrier Properties in Monoclinic-Symmetry

Author

Schubert, Mathias, Mock, Alyssa, Korlacki, Rafał, Knight, Sean, Monemar, Bo, Goto, Ken, Kumagai, Yoshinao, Kuramata, Akito, Galazka, Zbigniew, Wagner, Günther, Tadjer, Marko J., Wheeler, Virginia D., Higashiwaki, Masataka, Darakchieva, Vanya, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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755. Field-Effect Transistors 1 : Introduction of Early Transistor Developments for Power Switching and RF Applications

Author

Moser, Neil, Green, Andrew, Chabak, Kelson, Heller, Eric, Jessen, Gregg, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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756. Thermal Properties

Author

Liu, Zeyu, Luo, Tengfei, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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757. Scintillation Properties

Author

Yanagida, Takayuki, Okada, Go, Kawaguchi, Noriaki, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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758. Structural Properties 3 : Vacancy Defects Studied with Positron Annihilation Spectroscopy

Author

Tuomisto, Filip, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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759. Electrical Properties 4 : Band Offsets and Interface State Density Characterization of Dielectric/Ga2O3 Interfaces

Author

Tadjer, Marko J., Wheeler, Virginia D., Shahin, David I., Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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760. Electrical Properties 3 : Traps in β-Ga2O3: From Materials to Transistors

Author

Arehart, Aaron R., Ringel, Steven A., Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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761. Ozone-Enhanced Molecular Beam Epitaxy

Author

Sasaki, Kohei, Yamakoshi, Shigenobu, Kuramata, Akito, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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762. Electrical Properties 2 : Electron Transport Studies in β-Ga2O3

Author

Ghosh, Krishnendu, Kumar, Avinash, Singisetti, Uttam, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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763. Structural Properties 2 : Crystallographic Defects in and X-Ray Topography Analysis

Author

Yamaguchi, Hirotaka, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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764. Electrical Properties 1 : Donors and Acceptors

Author

Neal, Adam T., Mou, Shin, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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765. Structural Properties 1 : Characterization of Defects in β-Ga2O3 Substrates by Transmission Electron Microscopy and Related Techniques

Author

Ueda, Osamu, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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766. First-Principles Calculations 1 : Electronic and Structural Properties of Ga

Author

Peelaers, Hartwin, Van de Walle, Chris G., Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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767. Plasma-Assisted Molecular Beam Epitaxy 1 : Growth, Doping, and Heterostructures

Author

Mauze, Akhil, Speck, James, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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768. First-Principles Calculations 2 : Doping and Defects in Ga

Author

Varley, Joel B., Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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769. Metal Organic Chemical Vapor Deposition 2 : Heteroepitaxial MOCVD Growth of Thin Films on Sapphire Substrates

Author

Yao, Yao, Davis, Robert F., Porter, Lisa M., Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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770. Metalorganic Chemical Vapor Deposition 1 : Homoepitaxial and Heteroepitaxial Growth of Ga2O3 and Related Alloys

Author

Alema, Fikadu, Osinsky, Andrei, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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771. Plasma-Assisted Molecular Beam Epitaxy 2 : Fundamentals of Suboxide-Related Growth Kinetics, Thermodynamics, Catalysis, Polymorphs, and Faceting

Author

Bierwagen, Oliver, Vogt, Patrick, Mazzolini, Piero, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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772. Low Pressure Chemical Vapor Deposition

Author

Zhao, Hongping, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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773. Pulsed Laser Deposition 2 : Heteroepitaxial Growth of Ga and Related Alloys

Author

von Wenckstern, Holger, Splith, Daniel, Grundmann, Marius, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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774. Pulsed Laser Deposition 1 : Homoepitaxial Growth of β-Ga2O3 on β-Ga2O3 Substrates

Author

Leedy, Kevin D., Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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775. Halide Vapor Phase Epitaxy 2 : Heteroepitaxial Growth of α- and ε-Ga2O3

Author

Oshima, Yuichi, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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776. Halide Vapor Phase Epitaxy 1 : Homoepitaxial Growth of β-Ga2O3 on β-Ga2O3 Substrates

Author

Kumagai, Yoshinao, Konishi, Keita, Goto, Ken, Murakami, Hisashi, Monemar, Bo, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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777. Mist Chemical Vapor Deposition 2 : Heteroepitaxial Growth of ε-Ga2O3 on Various Substrates

Author

Nishinaka, Hiroyuki, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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778. Czochralski Method

Author

Galazka, Zbigniew, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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779. Floating Zone Method, Edge-Defined Film-Fed Growth Method, and Wafer Manufacturing

Author

Kuramata, Akito, Koshi, Kimiyoshi, Watanabe, Shinya, Yamaoka, Yu, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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780. Vertical Bridgman Growth Method

Author

Hoshikawa, Keigo, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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781. Introduction

Author

Higashiwaki, Masataka, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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782. Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates.

Author

Lee, Sam-Dong, Akaiwa, Kazuaki, and Fujita, Shizuo

Subjects
*CRYSTALS, *GALLIUM compounds, *GAS flow, *PHASE transitions, *CHEMICAL vapor deposition, *CRYSTALLOGRAPHY
Abstract

High quality single crystalline alpha gallium oxide (α-Ga2O3) films, as highlighted by the X-ray diffraction ω-scan full-width at half maximum of as small as 30 arcsec, were prepared by the mist chemical vapor deposition (CVD). The quality of the film was markedly dependent of the carrier gas flow rate, so we need careful attention for the optimum growth conditions. The thermal stability of α-Ga2O3 films was investigated by studying their thermal stability under thermal annealing in terms of the structural and optical properties. It was found that α-Ga2O3films grown at 470 °C are stable until 550 °C, but are gradually transformed to β-Ga2O3over 600 °C. Finally, β-Ga2O3films only existed at 700 °C. So the device processes for α-Ga2O3 should be done below 550 °C to avoid phase transformation. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Published
2013
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783. Optical Properties of Aluminumquinoline-Oxadiazole Codeposited Luminescent Layers

Author

Mitsuru Asano, Mitsuru Asano, Tadahiro Nakazawa, Tadahiro Nakazawa, Kentaro Ueda, Kentaro Ueda, Shizuo Fujita, Shizuo Fujita, and Shigeo Fujita, Shigeo Fujita

Abstract

Aluminumquinoline-oxadiazole (Alq3-PBD) codeposited layers, where the heterojunction of Alq3and PBD is expected to possess type-I energy lineup, were fabricated by vacuum evaporation, and their optical properties were investigated. The results showed effective energy transfer from PBD to Alq3followed by dominant emission from Alq3, even at the Alq3concentration as low as about 1.5%. By using the Alq3-PBD codeposited layer as the emitting layer of electroluminescence (EL) devices, a successful increase in output power and quantum efficiency was observed compared to conventional EL structures.

Published
1998
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784. Growth of ZnO by Molecular Beam Epitaxy Using NO2as Oxygen Source

Author

Keiichiro Sakurai, Keiichiro Sakurai, Daiji Iwata, Daiji Iwata, Shizuo Fujita, Shizuo Fujita, and Shigeo Fujita, Shigeo Fujita

Abstract

Nitrogen dioxide was applied for molecular beam epitaxy of ZnO on (0001) sapphire substrates. Equipped with liquid nitrogen cryoshrouds, the pressure inside the chamber was kept below 1×10-7Torr during growth. The samples were characterized by reflection high energy electron diffraction, X-ray diffraction, photoluminesence and scanning electron microscopy. The ZnO crystals clearly showed excitonic optical properties up to room temperature. Effects of low-temperature buffer layers for better surface morphology and reproducibility were also investigated.

Published
1999
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785. Photoluminescence Dynamics of Aluminumquinoline/Oxadiazole Multilayer Structures

Author

Tadahiro Nakazawa, Tadahiro Nakazawa, Mitsuru Asano, Mitsuru Asano, Shizuo Fujita, Shizuo Fujita, and Shigeo Fujita, Shigeo Fujita

Abstract

Photoluminescence (PL) dynamics of aluminumquinoline/oxadiazole (Alq3/PBD) multilayer structures, which may possess a carrier confinement type-I energy lineup, has been investigated by time-resolved PL spectroscopy with a mode-locked Ti-sapphire laser. The decay time of the emission from PBD in the multilayer structure was as fast as several picoseconds, in contrast to that from a PBD single layer, 1.7 ns, and tended to increase with an increase in PBD thickness. For the emission from Alq3, on the other hand, only a slight increase in the decay time was observed in the multilayer structure compared to a single layer. These results indicate the rapid energy transfer from PBD to Alq3, similar to that in semiconductor quantum well structures with the type-I energy lineup.

Published
1999
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786. Metalorganic Molecular Beam Epitaxy of Zn1-xCdxSySe1-yQuaternary Alloys on GaAs Substrate

Author

Ichino, Kunio, Wu, Yi-hong, Kawakami, Yoichi, Shizuo Fujita, Shizuo Fujita, and Shigeo Fujita, Shigeo Fujita

Abstract

The successful growth of Zn1-xCdxSySe1-y(ZnCdSSe) quaternary alloys by metalorganic molecular beam epitaxy (MOMBE) is reported. Layer-by-layer growth was confirmed for the first time by monitoring the intensity oscillation of a specular beam in a reflection high-energy diffraction (RHEED) pattern. ZnCdSSe layers coherently grown on GaAs exhibited good crystallographic and optical properties.

Published
1991
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787. Recombination Dynamics in ZnxCd1-xS Single Quantum Well Grown by Photoassisted Metalorganic Vapour Phase Epitaxy by Time-Resolved Photoluminescence Spectroscopy

Author

Hervé Dumont, Hervé Dumont, Yoichi Kawakami, Yoichi Kawakami, Shizuo Fujita, Shizuo Fujita, and Shigeo Fujita, Shigeo Fujita

Abstract

A higher zinc composition of illuminated epilayers (Zn0.38Cd0.62S) was employed to form the barrier whereas unilluminated growth sequences were adopted to grow the well (Zn0.30Cd0.70S) in the photoassisted metalorganic vapour phase epitaxy (MOVPE). Time-integrated photoluminescence spectra clearly show two peaks at 437 nm (2.83 eV) and 443 nm (2.80 eV) attributed to the barrier and to the well respectively. The time evolution of these spectra shows an increasing intensity of emission from the well with a time delay due to the confinement and recombination of carriers in the well. Time-resolved measurements have shown a time delay of 60 ps between the barrier and the well. These results indicate the formation of type-I band structure.

Published
1995
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788. Plasma-Deposited Silicon Nitride Films from SiF2as Silicon Source

Author

Fujita, Shizuo, Toyoshima, Hideo, Ohishi, Toshiyuki, and Sasaki, Akio

Abstract

SiF2gas is used instead of SiF4as a reactant source for the plasma-deposition of silicon nitride. As compared with the reaction from the SiF4-N2-H2gas mixture, (i) the deposition rate is higher at the same N/Si ratio, (ii) more nitrogen, less fluorine and less oxygen are incorporated in the film, and (iii) the film can be deposited without H2gas. These results can be attributed to higher reactivity of the SiF2gas.

Published
1984
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789. (2 × 6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation

Author

Jun Suda, Jun Suda, Yoichi Kawakami, Yoichi Kawakami, Shizuo Fujita, Shizuo Fujita, and Shigeo Fujita, Shigeo Fujita

Abstract

Sulfur treatment of GaAs (001) using hydrogen sulfide to obtain a (2×6) S-terminated surface is presented. When a GaAs substrate with no epitaxial buffer layer is annealed at up to 580°C in a high vacuum (< 1 ×10-9Torr), a mixture of (3×6) and (4×6) Ga-terminated reconstructions is observed. After cooling of the substrate to 300°C and irradiating it with hydrogen sulfide, a clear (2×6) S-terminated surface reconstruction appears in a few minutes.

Published
1996
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790. Semiconductor-Like Carrier Conduction and Its Field-Effect Mobility in Metal-Doped C60Thin Films

Author

Hoshimono, Katsunori, Fujimori, Shigeo, Shizuo Fujita, Shizuo Fujita, and Shigeo Fujita, Shigeo Fujita

Abstract

Conductivity and its temperature dependence, conduction type, and field-effect mobility in metal (In or Sb)-doped C60thin films are investigated together with those of undoped films. All electrical measurements have been conducted without exposure to air after deposition, in order to minimize the degradation of films due to incorporation of oxygen. For films with both dopants, (1) the conductivity is several orders of magnitude higher than that of undoped films, (2) the conductivity follows a semiconductor-like temperature dependence with the activation energy of 0.10-0.17 eV, which is much lower than that of the undoped films, 0.51 eV, (3) the conduction is n-type, and (4) the field-effect mobility is 0.03-0.04cm2/V·s. Enhancement of conductivity in metal-doped C60films is attributed to the increase of both carrier concentration and mobility.

Published
1993
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791. Photoluminescence Excitation Spectroscopy of the Lasing Transition in Zn0.85Cd0.15Se-ZnS0.08Se0.92Multiple Quantum Wells

Author

Kawakami, Yoichi, Cavenett, Brian C., Ichino, Kunio, Fujita, Shizuo, and Fujita, Shigeo

Abstract

Stimulated emission from a Zn0.85Cd0.15Se-ZnS0.08Se0.92multiple quantum well has been investigated in detail by means of photoluminescence excitation spectroscopy using a pulsed dye laser covering a spectral range from the lowest band edge to the higher subbands in the Zn0.85Cd0.15Se wells and including the band edge of the ZnS0.08Se0.92barriers or confinement layers. It has been shown that the lowest thresholds are achieved when the layers are resonantly excited at the photon energy of the n= 1 heavy-hole exciton state, confirming that excitons play an important role in determing the lasing transition in this structure.

Published
1993
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792. Formation of an Atomically Flat Surface of ZnSe on GaAs (001) by Metalorganic Vapor Phase Epitaxy

Author

Funato, Mitsuru, Aoki, Satoshi, Shizuo Fujita, Shizuo Fujita, and Shigeo Fujita, Shigeo Fujita

Abstract

Surface morphologies of pseudomorphic ZnSe on GaAs (001) grown by metalorganic vapor phase epitaxy have been studied by atomic force microscopy. The observation of ZnSe grown at 400, 450 and 500°C reveals that the growth mode below 450°C is 2 dimensional (2D), while that at 500°C is highly 3D. In particular, growth at 450°C is in the layer-by-layer mode. These observations are interpreted in terms of temperature-enhanced migration of Zn adatoms and evaporation of Se from the ZnSe surface. An atomically flat ZnSe surface which consists of wide terraces without small 2D islands can be obtained by growing at 450°C and post-growth annealing at the same temperature in Se ambient.

Published
1997
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793. Surface Treatment of Indium-Tin-Oxide Substrates and Its Effects on Initial Nucleation Processes of Diamine Films

Author

Shizuo Fujita, Shizuo Fujita, Takeshi Sakamoto, Takeshi Sakamoto, Kentaro Ueda, Kentaro Ueda, Kazuki Ohta, Kazuki Ohta, and Shigeo Fujita, Shigeo Fujita

Abstract

The effects of several surface treatment techniques for indium-tin-oxide (ITO) substrates on the surface properties and the initial nucleation processes of trisphenyldiamine (TPD) have been investigated. Mechanical rubbing, HCl treatment, and O2-plasma irradiation smoothen the ITO surface and enhance the cohesion of TPD molecules. As-received ITO surfaces promote amorphous structure of the TPD molecules; this results in effective carrier transport, but the substrate surface is too rough on a molecular scale for the fabrication of very thin (e.g.,?200 Å) layered structures. Layer-by-layer amorphous nucleation on flat surfaces is a key technology for the fabrication of future organic electroluminescence (EL) device structures with very thin constituent layers. O2-plasma treatment reduces the potential barrier for hole injection from ITO to TPD with moderate cohesion of TPD molecules, and results in brighter EL devices than those on as-received ITO substrates.

Published
1997
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794. Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method

Author

Park, Doo-Cheol, Ko, Hyun-Chul, Fujita, Shizuo, and Fujita, Shigeo

Abstract

The GaN thin films were grown at a low substrate temperature (500°C) by radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (RF PECVD) on glass substrates deposited with indium tin oxide (ITO) thin films. The growth of a thin buffer layer at 200°C improved the sample quality. Highly oriented polycrystalline GaN, where the (0002) planes were parallel to the substrate surface, was identified by X-ray diffraction (XRD) measurement. The surface orientation was strongly dependent on the growth parameters. Surface morphology observed by atomic force microscopy (AFM) showed the hexagonal columnar structure of the GaN thin films.

Published
1998
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795. Composition and Chemical Bonds in Silicon Nitride by SiH4-N2Gas Mixture Plasma CVD

Author

Fujita, Shizuo, Zhou, Nan-Sheng, and Sasaki, Akio

Abstract

Plasma CVD silicon nitride films are produced from SiH4-N2gas mixture with a constant flow ratio SiH4/N2=0.1. When the pressure decreases and the substrate temperature increases, the Si/N composition approaches the stoichiometric value 0.75. As compared with the film deposited from SiH4-NH3reaction, the present ammonia-free silicon nitride contains little N-H bonds and less hydrogen, and can be expected to have higher atom concentration and tight bondings.

Published
1983
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796. Structural and Electrical Properties of Ta2O5Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source

Author

Murawala, Prakash A., Sawai, Mikio, Tatsuta, Toshiaki, Tsuji, Osamu, Fujita, Shizuo, and Fujita, Shigeo

Abstract

We report on structural and electrical properties of tantalum penta oxide (Ta2O5) material with a high dielectric constant grown from a penta ethoxy tantalum [Ta(OC2H5)5] liquid source by the plasma-enhanced liquid source chemical vapor deposition (PE-LS-CVD) technique. We have investigated several basic plasma deposition conditions. Structural properties investigated by ?-2? X-ray measurements showed the amorphous nature of the films, and Auger electron spectrosopy (AES) and secondary ion mass spectroscopy (SIMS) indicated growth of Ta2O5films having proper stoichiometry (Ta/O=0.4). Optical transmission spectroscopy showed that the band gap (Eg) of Ta2O5is 5.28 eV. Electrical measurements performed on Au/Ta2O5/n, p-Si metal oxide semiconductor (MOS) structure exhibited very well defined capacitance-voltage (C-V) characteristics with flat band voltage as low as -0.1 eV, low leakage current, high breakdown voltage and high dielectric constant (25-38). As a hitherto unreported step in Ta2O5processing we also performed rapid thermal (RTA) annealing at 700°C and 900°C for 5 min which resulted in much improved electrical properties. All results suggest growth of high-quality Ta2O5films from a carbon-based Ta liquid source, due to an effect of plasma-enhanced deposition process.

Published
1993
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797. Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn0.80Cd0.20Se-ZnS0.08Se0.92Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy

Author

Kawakami, Yoichi, Yamaguchi, Shigeo, Wu, Yi-hong, Ichino, Kunio, Shizuo Fujita, Shizuo Fujita, and Shigeo Fujita, Shigeo Fujita

Abstract

We report the characteristics of optically pumped stimulated emission in Zn0.80Cd0.20Se-ZnS0.08Se0.92multiple quantum well (MQW) structures fabricated by metalorganic molecular beam epitaxy (MOMBE). At room-temperature (290 K), laser operation at 504 nm was achieved with the threshold excitation intensity (Ith) of 66 kW/cm2under pulsed excitation condition. Laser operation up to 400 K has been observed in this MQW structure.

Published
1991
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798. Growth of Short-Period ZnSe-ZnSxSe1-xStrained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy

Author

Wu, Yi-hong, Kawakami, Yoichi, Shizuo Fujita, Shizuo Fujita, and Shigeo Fujita, Shigeo Fujita

Abstract

We report on metalorganic molecular beam epitaxial (MOMBE) growth of short-period ZnSe-ZnSxSe1-xstrained-layer superlattices (SLSs), in which special attention has been paid to in situ monitorring of the growth by reflection high-energy electron diffraction (RHEED). GaAs (001) wafer, which was employed as the substrate, was pretreated with (NH4)2Sxsolution; this pretreatment was found to be favorable for layer-by-layer growth of the constituent layers. The superlattice structures obtained here were characterized by X-ray diffraction and photoluminescence measurements, suggesting formation of well-defined SLSs in spite of the short periods in the structures.

Published
1991
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799. Deep Trap States in Si3N4Layer on Si Substrate

Author

Fujita, Shizuo, Nishihara, Michinori, Hoi, Won-Lon, and Sasaki, Akio

Abstract

Charge transfer processes in metal-nitride-semiconductor (MNS) diodes are investigated. The spatial and energetic distributions of the trap state density in Si3N4layers on Si substrates are determined by measuring the amount of transferred charge in MNS diodes. We apply to MNS diodes relatively wide and low-pulsed voltages so that trap states spatially distributed deep in the Si3N4layer can be examined, and we analyze the electronic properties of the trap states without any pre-assumptions as made in past analyses. The results show that (i) charging and discharging processes are mainly due to direct tunneling of electrons, (ii) donor-like trap states lie near the mid-gap of the Si3N4layer on an Si substrate, (iii) they are distributed uniformly in the region of 26-44 Å from the Si/Si3N4interface, and (iv) their density is 3×1019cm-3.

Published
1981
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800. Mist Chemical Vapor Deposition Growth of α‐In2O3 Films Using Indium Oxide Powder as Source Precursor.

Author

Taguchi, Akito, Takahashi, Subaru, Sekiguchi, Atsushi, Kaneko, Kentaro, Fujita, Shizuo, Onuma, Takeyoshi, Honda, Tohru, and Yamaguchi, Tomohiro

Subjects
*POWDERS, *CHEMICAL vapor deposition, *INDIUM oxide, *AEROSOLS, *EPITAXY, *ELECTRON mobility, *DEIONIZATION of water, *SILICON nitride films
Abstract

The epitaxial growth of α‐In2O3 films by mist chemical vapor deposition (mist CVD) using In2O3 powder as a source precursor is conducted. To prepare the source precursor solution, the In2O3 powder is first dissolved in HCl aqueous solution. The concentrations of HCl in the source precursor solution are then adjusted to be between 0.82 and 2.3 mol L−1 by adding deionized water. An enhancement in α‐In2O3 phase formation and increases in its grain size and thickness are observed with increasing HCl concentration. A pure α‐In2O3 film grown using a source precursor solution with 1.2 mol L−1 of HCl shows a residual electron concentration of 8.4 × 1017 cm−3 and electron Hall mobility of 216 cm2 V−1s−1. [ABSTRACT FROM AUTHOR]

Published
2022
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