673 results on '"Capasso, C"'
Search Results
652. Serum-mediated killing of Salmonella typhimurium and Escherichia coli mutants which share a different content of major proteins.
653. Correlation between modification of membrane phospholipids and some biological activity of lymphocytes, neutrophils and macrophages.
654. O2/GaAs(110) interface formation at 20 K: Photon-induced reaction and desorption.
655. Metal-InP(110) interface properties: Temperature, dopant-concentration, and cluster-deposition dependencies.
656. Thermally reversible band bending for Bi/GaAs(110): Photoemission and inverse-photoemission investigations.
657. Dynamic photoinduced low-temperature oxidation of GaAs(110).
658. Photovoltaic effects in temperature-dependent Fermi-level movement for GaAs(110).
659. Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctions.
660. Porin content modifies resistance of Salmonella typhimurium to phagocytosis.
661. Imaging of 5f densities of states in resonant photoemission measurements.
662. Reversible temperature-dependent Fermi-level movement for metal-GaAs(110) interfaces.
663. Adsorption of counterions to a stearate monolayer spread at the water-air interface: A synchrotron x-ray study.
664. Synchrotron-radiation photoemission studies of interface formation between metals and superconductors: Al and In on YBa2Cu
665. Electronic properties of the precrystallization regime of germanium: A photoemission study.
666. Comparative study of some biological activities of porins extracted from various microorganisms.
667. Disruption, segregation, and passivation for Pd and noble-metal overlayers on YBa2Cu3O6.9.
668. Exchange reaction, clustering, and surface segregation at the Al/InSb(110) interface.
669. Inhibition of macrophage phagocytic activity by SV-IV, a major protein secreted from the rat seminal vesicle epithelium.
670. Development of rare-earth-semiconductor interfaces: Ce/InP(110), Sm/InSb(110), and Ce/CdTe(110).
671. Synchrotron-radiation photoemission studies of Cu/InSb(110) interface evolution and modification by Al interlayers.
672. Au/InSb(110) interface profiles from synchrotron-radiation and polar-angle-dependent x-ray photoemission.
673. Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K.
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