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Interface acoustic waves (IAWs) propagate along the boundary between two perfectly bonded solids. For a leakage- free IAW, all displacement fields must be evanescent along the normal to the boundary inside both solids, but leaky IAWs may also exist depending on the selected combination of materials. When at least one of the bonded solids is a piezoelectric material, the IAW can be excited by an interdigital transducer (IDT) located at the interface, provided one can fabricate the transducer and access the electrical contacts. We discuss here the fabrication and characterization of IAW resonators made by indirect bonding of lithium niobate onto silicon via an organic layer. In our fabrication process, IDTs are first patterned over the surface of a Y-cut lithium niobate wafer. A thin layer of SU-8 photo-resist is then spun over the IDTs and lithium niobate to a thickness below one micrometer. The SU-8-covered lithium niobate wafer then is bonded to a silicon wafer. The stack is subsequently cured and baked to enhance the acoustic properties of the interfacial resist. Measurements of resonators are presented, emphasizing the dependence of propagation losses on the resist properties. Comparison with theoretical computations based on periodic finite element/boundary element analysis allows for explanation of the actual operation of the device.

The need for high-frequency, wide-band filters has instigated many developments based on combining thin piezoelectric films and high acoustic velocity materials (sapphire, diamond-like carbon, silicon, etc.) to ease the manufacture of devices operating above 2 GHz. In the present work, a technological process has been developed to achieve thin-oriented, single-crystal lithium niobate (LiNbO3) layers deposited on (100) silicon wafers for the fabrication of radio-frequency (RF) surface acoustic wave (SAW) devices. The use of such oriented thin films is expected to favor large coupling coefficients together with a good control of the layer properties, enabling one to chose the best combination of layer orientation to optimize the device. A theoretical analysis of the elastic wave assumed to propagate on such a combination of material is first exposed. Technological aspects then are described briefly. Experimental results are presented and compared to the state of art.