501. Effect of annealing temperature on the structural and electrical properties of SrBi2Ta2O9 thin films for memory-based applications
- Author
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Jha, G., Roy, A., Dhar, A., Manna, I., and Ray, S.K.
- Subjects
- *
THIN films , *SURFACES (Technology) , *SOLID state electronics , *THICK films - Abstract
Abstract: Ferroelectric SrBi2Ta2O9 (SBT) thin films were grown on p-type (100) Si substrates by radio frequency sputtering technique. The crystallinity of the films was studied using grazing incidence X-ray diffraction pattern. The spectra showed the films were polycrystalline with dominant orientation along (115) plane. The surface morphology was investigated by atomic force microscope. The chemical composition was studied by Rutherford back-scattering, which yielded a near stoichiometric composition of SBT. The capacitance–voltage characteristics of Al/SBT/Si capacitors measured at 100kHz showed a hysteresis nature with a clockwise rotation and the memory window of the hysteresis loop was 0.88V with the gate voltage ±5V. The interface trap density was calculated by using Hills method at room temperature and a value in the order of 1011–1012 eV−1 cm−2 was found depending on the crystallization temperature at midgap region. [Copyright &y& Elsevier]
- Published
- 2007
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