651. Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO
- Author
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Anthony Barra, Mathias Kläui, Joseph D. Schneider, Paymon Shirazi, Lorenzo Baldrati, Andrew Ross, Andres C. Chavez, Romain Lebrun, Olena Gomonay, Jairo Sinova, Gregory P. Carman, and Qianchang Wang
- Subjects
010302 applied physics ,Condensed Matter - Materials Science ,Materials science ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,Magnetoresistance ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,Magnetostriction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Magnetic field ,Condensed Matter::Materials Science ,0103 physical sciences ,Antiferromagnetism ,Condensed Matter::Strongly Correlated Electrons ,Crystallite ,0210 nano-technology ,Anisotropy ,Saturation (magnetic) ,Spin-½ - Abstract
As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Neel vector orientiation in polycrystalline NiO via spin Hall magnetoresistance (SMR). Secondly, by applying strain through a piezo-electric substrate, we reduce the critical magnetic field required to reach a saturation of the SMR signal, indicating a change of the anisotropy. Our results are consistent with polycrystalline NiO exhibiting a positive sign of the in-plane magnetostriction. This method of anisotropy-tuning offers an energy efficient, on-chip alternative to manipulate a polycrystalline antiferromagnets magnetic state.
- Published
- 2021
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