Search

Purpose: To evaluate the effect of maxillary protraction on upper airway dimensions in skeletal Class III malocclusions and to investigate the relationship between changes in craniofacial morphology and upper airway dimensions., Methods: 22 patients who had maxillary retrognathism confirmed by cervical vertebral maturation and treated with face mask protraction. Pre- and post-treatment cephalometric radiographs were analyzed with SAS8.2 software package for paired t test and correlation analysis., Results: The dimensions of PNS-ad1,PNS-ad2,PSP-SPPW, P-MPW increased significantly (P<0.01), Tb-TPPW decreased significantly (P<0.05). The change of V-LPW was not significant (P>0.05).Correlation was found between changes of PNS-Ba and PNS-ad1, PNS-ad2,V-LPW (P<0.05);changes of Hy-H1 and P-MPW,V-LPW (P<0.05);changes of Hy-H0 and V-LPW (P<0.05). No correlation was found between other pharyngeal measurements and investigated craniofacial variables(P>0.05)., Conclusions: Maxillary protraction can affect the upper airway structures. In addition, variables on craniofacial morphology are relative with upper airway dimensions.

Objective: To evaluate the efficacy of semiconductor low level laser irradiation for the treatment of postoperative exposure of hydroxyapatite orbital implants., Methods: 22 cases with postoperative exposure of hydroxyapatite orbital implants were divided into three groups according to the size of implants exposure. The exposure wound in the 3 groups was irradated with semiconductor low level laser 5 min per day for 5-15 days. The follow-up period ranged from 2 to 24 months., Results: In the group with less then 3 mm of exposure, the wound healed in 1 week after 5-10 days irradiation; in the group with implant exposure of 4-7 mm, the would healed in 1-2 weeks after 10-15 days irradiation; in the group with implant exposure of 8-10 mm, the would healed in 2-3 weeks after 10-15 days irradiation. Compared with the treatments of drugs and/or surgical repair, which was used for another 20 cases of exposure of hydroxyapatite orbital implants, semiconductor low level laser increased healing rate obviously in the groups with implant exposure of 4-7 mm and 8-10 mm (P = 0.019, 0.018)., Conclusion: Semiconductor low level laser has better effects than drugs and/or surgical repair for exposure of hydroxyapatite orbital implants.