601. High temperature thermal management with boron nitride nanosheets
- Author
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Bao Yang, Jiaqi Dai, Zhi Yang, Emily Hitz, Ronggui Yang, Liangbing Hu, Lisha Xu, Puqing Jiang, Yilin Wang, Wei Luo, Yonggang Yao, and Hua Xie
- Subjects
Materials science ,Graphene ,Nanotechnology ,02 engineering and technology ,Substrate (electronics) ,engineering.material ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,law.invention ,chemistry.chemical_compound ,Thermal conductivity ,Operating temperature ,Coating ,chemistry ,law ,Boron nitride ,engineering ,General Materials Science ,Power semiconductor device ,Composite material ,Thin film ,0210 nano-technology - Abstract
The rapid development of high power density devices requires more efficient heat dissipation. Recently, two-dimensional layered materials have attracted significant interest due to their superior thermal conductivity, ease of production and chemical stability. Among them, hexagonal boron nitride (h-BN) is electrically insulating, making it a promising thermal management material for next-generation electronics. In this work, we demonstrated that an h-BN thin film composed of layer-by-layer laminated h-BN nanosheets can effectively enhance the lateral heat dissipation on the substrate. We found that by using the BN-coated glass instead of bare glass as the substrate, the highest operating temperature of a reduced graphene oxide (RGO) based device could increase from 700 °C to 1000 °C, and at the same input power, the operating temperature of the RGO device is effectively decreased. The remarkable performance improvement using the BN coating originates from its anisotropic thermal conductivity: a high in-plane thermal conductivity of 14 W m−1 K−1 for spreading and a low cross-plane thermal conductivity of 0.4 W m−1 K−1 to avoid a hot spot right underneath the device. Our results provide an effective approach to improve the heat dissipation in integrated circuits and high power devices.
- Published
- 2018