501. Strong anti-strain capacity of CoFeB/MgO interface on electronic structure and state coupling.
- Author
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Fei Guo, Yaping Wu, Zhiming Wu, Ting Chen, Heng Li, Chunmiao Zhang, Mingming Fu, Yihong Lu, and Junyong Kang
- Subjects
ELECTRONIC structure ,ATOMIC structure ,FERROMAGNETIC materials ,HETEROSTRUCTURES ,BLOCH'S theorem - Abstract
Electronic structure and spin-related state coupling at ferromagnetic material (FM)/MgO (FM = Fe, CoFe, CoFeB) interfaces under biaxial strain are evaluated using the first-principles calculations. The CoFeB/MgO interface, which is superior to the Fe/MgO and CoFe/MgO interfaces, can markedly maintain stable and effective coupling channels for majority-spin state under large biaxial strain. Bonding interactions between Fe, Co, and B atoms and the electron transfer between Bloch states are responsible for the redistribution of the majority-spin state, directly influencing the coupling effect for the strained interfaces. Layer-projected wave function of the majority-spin state suggests slower decay rate and more stable transport property in the CoFeB/MgO interface, which is expected to maintain a higher tunneling magnetoresistance (TMR) value under large biaxial strain. This work reveals the internal mechanism for the state coupling at strained FM/MgO interfaces. This study may provide some references to the design and manufacturing of magnetic tunnel junctions with high tunneling magnetoresistance effect. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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