1,651 results on '"Patriarche G"'
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552. Effect of CeF3 Addition on the Nucleation and Up-Conversion Luminescence in Transparent Oxyfluoride Glass−Ceramics
553. Stress‐engineered orderings of self‐assembled III–V semiconductor nanostructures
554. Nucleation efficiency of erbium and ytterbium fluorides in transparent oxyfluoride glass-ceramics
555. Buried dislocation networks for the controlled growth of III–V semiconductor nanostructures
556. Stress-driven self-ordering of III–V nanostructures
557. Indentation deformation of thin {111} GaAs and InSb foils: influence of polarity
558. Deviation of the mechanical response of Wall-patterned (001) GaAs Surface: a central-plastic-zone criterion
559. High density InAlAs/GaAlAs quantum dots as an efficient enhanced Kerr material for transverse non-linear optics in microcavities
560. Indentation Crystallization and Phase Transformation of Amorphous Germanium
561. Reactive-ion etching of high-Q and submicron-diameter GaAs∕AlAs micropillar cavities
562. Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
563. Long-range ordering of III–V semiconductor nanostructures by shallowly buried dislocation networks
564. Composition profiling of InAs∕GaAs quantum dots
565. Vickers indentation of thin GaAs (001) samples
566. Further insight into the growth temperature influence of 1.3 μm GaInNAs/GaAs QWs on their properties
567. Growth of GaNxAs1−x atomic monolayers and their insertion in the vicinity of GaInAs quantum wells
568. Indentation-induced crystallization and phase transformation of amorphous germanium
569. TEM study of the indentation behaviour of thin Au film on GaAs
570. GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
571. Absolute determination of the asymmetry of the in-plane deformation of GaAs (001)
572. Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection
573. Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
574. Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy
575. Indentation punching through thin (011) InP
576. Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate
577. Polarity-induced changes in the nanoindentation response of GaAs
578. Scanning tunneling microscopy and spectroscopy of InAsP/InP(001) quantum dots.
579. Optical properties of wurtzite InAs/InP core-shell nanowires grown on silicon substrates.
580. Improvement of modal gain of InAs/InP quantum-dash lasers.
581. Phase separation and superlattice formation by spontaneous vertical composition modulation in GaAs1−xNx/GaAs
582. Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
583. Improvement of heteroepitaxial growth by the use of twist-bonded compliant substrate: Role of the surface plasticity
584. Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
585. Effects of substrates and catalysts compositions on the crystalline quality of InP Nanowires grown on SrTiO3 (001), Si (001) and InP (111).
586. Tailoring nanopores for efficient sensing of different biomolecules.
587. Optically Active Defects in an InAsP/InP Quantum Well Monolithically Integrated on SrTiO3 (001).
588. Nanowires for quantum optics.
589. Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3μm wavelength
590. Electromodulation of the interband and intraband absorption of Ge/Si self-assembled islands
591. Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands
592. Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime
593. Structural properties of strained piezoelectric [111]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE
594. 1.5 [micro sign]m laser on GaAs with GaInNAsSb quinary quantum well
595. Plastic deformation of III–V semiconductorsunder concentrated load
596. Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy
597. Single photon sources using InAs/InP quantum dots.
598. Mid/far-infrared semiconductor devices exploiting plasmonic effects.
599. One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications.
600. Direct FIB fabrication and integration of "single nanopore devices" for the manipulation of macromolecules.
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