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Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronics, photovoltaics, and electronic devices. These devices are usually grown on thick and rigid Ge substrates manufactured by classical wafering techniques. Nanomembranes (NMs) provide an alternative to this approach while offering wafer-scale lateral dimensions, weight reduction, waste limitation, and cost effectiveness. Herein, we introduce the Porous germanium Efficient Epitaxial LayEr Release (PEELER) process, which consists of the fabrication of wafer-scale detachable Ge NMs on porous Ge (PGe) and substrate reuse. We demonstrate the growth of Ge NMs with monocrystalline quality as revealed by high-resolution transmission electron microscopy (HRTEM) characterization. Together with the surface roughness below 1 nm, it makes the Ge NMs suitable for growth of III-V materials. Additionally, the embedded nanoengineered weak layer enables the detachment of the Ge NMs. Finally, we demonstrate the wet-etch-reconditioning process of the Ge substrate, allowing its reuse, to produce multiple free-standing NMs from a single parent wafer. The PEELER process significantly reduces the consumption of Ge in the fabrication process, paving the way for a new generation of low-cost flexible optoelectronic devices., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elastic deformation of the porous micropillars, set under stress by the lattice mismatch between Ge and Si, and on the diffusion of Ge into the mesoporous patterned substrate attenuating the mismatch strain at the Ge/Si interface., (© 2022. The Author(s).)

The nature of the interface between the components of a nanocomposite is a major determining factor in the resulting properties. Using a graphene-mesoporous germanium nanocomposite with a core-shell structure as a template for complex graphene-based nanocomposites, an approach to quantify the interactions between the graphene coating and the component materials is proposed. By monitoring the pressure-induced shift of the Raman G-peak, the degree of coupling between the components, a parameter that is critical in determining the properties of a nanocomposite, can be evaluated. In addition, pressure-induced transformations are a way to tune the physical and chemical properties of materials, and this method provides an opportunity for the controlled design of nanocomposites., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

We investigate the structural, optical and terahertz properties of graphene-mesoporous silicon nanocomposites using Raman, terahertz time-domain and photoluminescence spectroscopy. The nanocomposites consist of a free-standing mesoporous silicon membrane with its external and pore surfaces coated with few-layer graphene. Results show a stabilization of the porous silicon morphology by the graphene coating. The terahertz refractive index and absorption coefficient were found to increase with graphene deposition temperature. Four bands in the 1.79-2.2 eV range emerge from the PL spectra of the nanocomposites. The broad bands centered at 1.79 eV and 1.96 eV were demonstrated to originate from Si nanocrystallites of different sizes. The narrower bands at 2.11 eV and 2.14 eV could be related to a thin SiC film at the Si/C interface., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)