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545 results on '"Akira Fujiwara"'

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503. Cationic and Ampholytic Surface Active Agents Containing Polyoxyethylene Groups

507. Ampholytic Surface Active Agents Containing Polyoxyethylene and. Sulfonic Acid Groups

509. The study of deep drawability of Al-Mg alloys with conical die

513. Effect of heat treatment on free-machining properties of 2011 aluminum alloy

515. Antioxidative Effect of Natural Vitamin E for Lard Used for Frying Instant Ramen

517. Circadian variations of onset of acute myocardial infarction and efficacy of thrombolytic therapy

518. Mars Dust Counter

519. Simulation of space weathering of planet-forming materials: Nanosecond pulse laser irradiation and proton implantation on olivine and pyroxene samples

520. Efficacy of cyclosporine combination therapy for new-onset minimal change nephrotic syndrome in adults

521. A simple method for efficiently establishing 8-azaguanine-resistant mutant human leukemia and myeloma cell lines

523. Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands

524. Silicon single-electron transistors and single-electron CCD

525. Silicon single-electron devices

526. Effects of tolvaptan in patients with chronic kidney disease and chronic heart failure

527. Silicon double-island single-electron device

528. Coupling capacitance between double quantum dots tunable by the number of electrons in Si quantum dots.

529. Spin splitting in EuO(111)/Si(111) spin-filter tunnel junctions with atomically sharp interface.

530. Transport characteristics in Au/pentacene/Au diodes.

535. Time-domain charge pumping on silicon-on-insulator MOS devices.

536. Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice.

537. An electromechanical displacement transducer.

538. Deviation from the law of energy equipartition in a small dynamic-random-access memory.

539. Self-aligned gate-all-around InAs/InP core–shell nanowire field-effect transistors.

540. Electrical Current Generation by Sorting Thermal Noise.

541. Gate Tuning of Direct/Indirect Optical Transitions in Silicon.

542. High-speed Single-electron Transfer toward High-accuracy Current Standards.

543. Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles.

544. Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping.

545. Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107.

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