351. A simple method for synthesizing VO2 with almost coincident hysteresis loops on Si substrate containing TiO2 buffer layer.
- Author
-
Zheng, Tan, Sang, Jingxin, Hua, Zhiwei, Xu, Liu, Xu, Xiaofeng, Wang, Chunrui, and Wu, Binhe
- Subjects
- *
HYSTERESIS loop , *BUFFER layers , *THIN films , *OXYGEN consumption , *GRAIN size , *TITANIUM dioxide - Abstract
• VO 2 and TiO 2 thin films were synthesized on Si substrates by a simple and controllable method. • The almost coincident hysteresis loops of VO 2 thin films including a TiO 2 buffer layer was realized on Si substrates. • The reasons for the narrowing of hysteresis loops width of VO 2 were analyzed and summarized from three aspects. The overlapped degree of hysteresis loops is critically important for the accurate response of vanadium dioxide (VO 2)-based optoelectronics devices. Generally, the hysteresis loops width is not less than 10 ℃ for VO 2 thin films deposited on amorphous SiO 2 /Si or Si substrates. In this work, the almost coincident hysteresis loops of VO 2 thin films including a TiO 2 buffer layer was synthesized successfully on Si substrate by a simple and controllable method. Here, the thickness of VO 2 and TiO 2 were 60 nm and 100 nm, respectively. XRD patterns show that the peak of rutile phase TiO 2 begin to appear while the thickness of buffer layer increases to about 65 nm, which is more compatible with the lattice structure of VO 2. Combined with the XPS spectra, it is found that the VO 2 thin films formed on different substrates include quite a few V5+ and relatively few V3+ impurity phases. In addition, theoretical analysis indicates that an inversely proportional relationship exists between the hysteresis loops width and the average grain size of VO 2 thin film, The SEM images confirm this point well revealing the average grain size of VO 2 thin film does increase with the thickness increase of TiO 2 buffer layer. ga1 The overlapped degree of hysteresis loops is critically important for the accurate response of vanadium dioxide (VO 2)-based optoelectronics devices. Generally, the hysteresis loops width is not less than 10 ℃ for VO 2 thin films deposited on amorphous SiO 2 /Si or Si substrates. In this work, the almost coincident hysteresis loops of VO 2 thin films including a TiO 2 buffer layer was synthesized successfully on Si substrate by a simple and controllable method. Here, the thickness of VO 2 and TiO 2 were 60 nm and 100 nm, respectively. XRD patterns show that the peak of rutile phase TiO 2 begin to appear while the thickness of buffer layer increases to about 65 nm, which is more compatible with the lattice structure of VO 2. Combined with the XPS spectra, it is found that the VO 2 thin films formed on different substrates include quite a few V5+ and relatively few V3+ impurity phases. In addition, theoretical analysis indicates that an inversely proportional relationship exists between the hysteresis loops width and the average grain size of VO 2 thin film, The SEM images confirm this point well revealing the average grain size of VO 2 thin film does increase with the thickness increase of TiO 2 buffer layer. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF