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We present a Bloch modes' based Green's function scattering formalism for cost efficient forward modelling of disordered binary surface textures. The usage of Bloch modes of an unperturbed reference ordered system as ansatz allows our formalism to address surface scattering beyond the shallow amplitude regime. The main advantage of our formalism is the possibility to utilize a small amount of plane waves to represent the assumed Bloch modes thereby reducing computational costs, while still allowing one to estimate the scattering response to all channels accessible by the disordered system. Benchmarking calculations discussed in the paper demonstrate how the usage of our Bloch modes ansatz provides an excellent estimate of the scattering response over an important regime of disorder. As an example of our method's strength, we examine an electrically decoupled binary light trapping texture and demonstrate how introducing disorder may improve light incoupling into the considered solar cell structure., Comment: 12 pages, 9 figures, submitted to PRB

Observing that the recent developments of the recursive (product) quantization method induces a family of Markov chains which includes all standard discretization schemes of diffusions processes , we propose to compute a general error bound induced by the recursive quantization schemes using this generic markovian structure. Furthermore, we compute a marginal weak error for the recursive quantization. We also extend the recursive quantization method to the Euler scheme associated to diffusion processes with jumps, which still have this markovian structure, and we say how to compute the recursive quantization and the associated weights and transition weights.

The establishment of a rigorous theory on thermodynamics of light management in photovoltaics that accommodates various loss mechanisms as well as wave-optical effects in the absorption and reemission of light is at stake in this contribution. To this end, we propose a theoretical framework to calculate the open-circuit voltage enhancement resulting from photon recycling ($\Delta V^{\mathrm{PR}}_{\mathrm{oc}}$) with rigorous wave-optical treatment. It can be applied to both planar thin-film and nanostructured single-junction solar cells. We derive an explicit expression for $\Delta V^{\mathrm{PR}}_{\mathrm{oc}}$, which reveals its dependence on internal quantum luminescence efficiency, parasitic reabsorption, and on photon escape probabilities of reemmited photons. While the internal quantum luminescence efficiency is an intrinsic material property, both latter quantities can be determined rigorously for an arbitrary solar cell architecture by three-dimensional electrodynamic dipole emission calculations. We demonstrate the strengths and validity of our framework by determining the impact of photon recycling on the $V_{\mathrm{oc}}$ of a conventional planar organo-metal halide perovskite thin-film solar cell and compare it to established reference cases with perfect antireflection and Lambertian light scattering. Our calculations reveal $\Delta V^{\mathrm{PR}}_{\mathrm{oc}}$ values of up to 80 mV for the considered device stack in the absence of angular restriction and up to 240 mV when the escape cone above the cell is restricted to $\theta_{\mathrm{out}}=2.5^\circ$ around the cell normal. These improvements impose severe constraints on the parasitic absorption as a parasitic reabsorption probability of only 2\% reduces the $\Delta V^{\mathrm{PR}}_{\mathrm{oc}}$ to 100 mV for the same angular restriction. Our work here can be used to provide design guidelines., Comment: 12 pages, 10 figures, Accepted in PRB