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We studied the effect of light ion and heavy ion irradiations on pnp Si BJTs. A mismatch in DLTS deep peak amplitude for devices with same final gain but irradiated with different ion species was observed. Also, different ions cause different gain degradation when the DLTS spectra are matched. Pre-dosed ion-irradiated samples show that ion induced ionization does not account for the differences in DLTS peak height but isochronal annealing studies suggest that light ions produce more VP defects than heavy ions to compensate for the lack of clusters that heavy ions produce. The creation of defect clusters by heavy ions is evident by the higher content of E4 and ${\mathrm {V}}_{2}^{\ast}$ defects compared to light ions.

The purpose of this work is to demonstrate equivalent bipolar transistor damage response to neutrons and silicon ions. We report on irradiation tests performed at the White Sands Missile Range Fast Burst Reactor, the Sandia National Laboratories (SNL) Annular Core Research Reactor, the SNL SPHINX accelerator, and the SNL Ion Beam Laboratory using commercial silicon npn bipolar junction transistors (BJTs) and III–V Npn heterojunction bipolar transistors (HBTs). Late time and early time gain metrics as well as defect spectra measurements are reported.

Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence

Ion Beam Induced Charge (IBIC) and Deep Level Transient Spectroscopy (DLTS) were used to investigate displacement damage caused by MeV energy ion beams in Si diodes. The devices were irradiated with 3 MeV Si ions to create displacement damage and a 2 MeV He ion beam was used for IBIC. The IBIC signal deterioration was measured as the function of the ion fluence and DLTS was used to identify the defects and their quantities. We used a new calculation method based on previous work by Fizzotti et al. [9] and more recently by Vittone [10] to determine the fraction of the active traps that affect the lifetime. The first application of this method is presented in this paper.

We present a series of metrics for comparison between displacement damage due to heavy ion and neutron irradiation in silicon bipolar junction transistors. We have compared ion and fast neutron irradiations to determine an ion-to-neutron damage equivalence. We find that a combination of metrics (damage factor, deep level transient spectroscopy (DLTS) and annealing factor) are needed to ensure a comprehensive understanding of the physics involved in the ion-to-neutron conversion. The linearity of the damage factor (primarily probing the base-emitter junction) is not enough to ensure a valid comparison; rather, we must also use additional techniques (DLTS and capacitance measurements) to ensure that collector compensation is not occurring. As a result, care must be taken in choosing the irradiation beam for ion exposures. The displacement damage should peak in the sensitive region of the device to both ensure maximum gain degradation and to minimize collector compensation.

Following irradiation, the gain of silicon bipolar transistors can be improved by annealing at 350 K. We show that both the number of defects measured by deep level transient spectroscopy (DLTS) and the gain can be restored to the post irradiation state by injection of minority carriers. One can cycle between the post irradiation state and the 350 K annealed state by alternating minority carrier injection at 300 K with zero- or reverse-bias anneals at 350 K. The structure of the bistable defects is not known, but we observe that they affect capture kinetics into the shallow charge state of the silicon divacancy defect, V 2 (=/−). This suggests that the bistable defects are located within the neutron or ion damage cluster.

Although it has been speculated that estrogen therapy may promote changes in breast tissue that could lead to cancer, no information exists as to differences in breast tissue for women who do and do not take hormone replacement (HRT) therapy. This study seeks to determine if there are differences in the tissue of women taking HRT in contrast to those who do not and if these differences are apparent in cases of breast cancer, cellular atypia, fibrocystic (FCD) disease and normal breasts. A total of 327 non-pregnant, nonlactating, pre-menopausal women were enrolled in the study, including 139 women who were actively taking HRT and 188 women who never had taken HRT. Using breast enhanced scintigraphy test (BEST) imaging, differentiation of breast tissue was determined. The groups were then analyzed to determine the effect of hormone therapy within each category of breast tissue. Differentiation between normal, FCD, cellular atypia, and breast cancer represent statistically significant differences (p.001) in metabolic activity and vascularity as demonstrated by differences in both average count activity (ACA) and maximal count activity (MCA). The distinction between cellular atypia and infiltrating breast cancer was statistically (p.05) different when looking at the maximal activity. Normal breast tissue and breasts with FCD appear more homogenous with no statistical differences in variability in breast tissue. Tissue variability is statistically greater when localized processes, such as cellular atypia and breast cancer, are present. Differentiation of cellular metabolic activity in breast tissue can be statistically determined when looking at the average and maximal metabolic activity. The final distinction between cellular atypia and cancer occurs when a focal region of breast tissue becomes metabolically more active than the surrounding breast tissue as shown by statistical increases in MCA. These findings are confirmed by the increased metabolic variability seen in regions of cellular atypia and cancer compared with the homogenous metabolic activity present in normal and fibrocystic breasts.

Ta2O5 is a candidate for use in metal–oxide–metal (MOM) capacitors in several areas of silicon device technology. Understanding and controlling leakage current is critical for successful implementation of this material. We have studied thermal and photoconductive charge transport processes in Ta2O5 MOM capacitors fabricated by anodization, reactive sputtering, and chemical vapor deposition. We find that the results from each of these three methods are similar if one compares films that have the same thickness and electrodes. Two types of leakage current are identified: (a) a transient current that charges the bulk states of the films and (b) a steady state activated process involving electron transport via a defect band. The transient process involves either tunneling conductivity into states near the Fermi energy or ion motion. The steady state process, seen most commonly in films

Pb(Zr0.53Ti0.47)O3 (PZT) on diamond is a potentially robust structure for surface acoustic wave (SAW) device applications. We have studied the growth and physical characteristics of PZT on diamond and other substrates by pulsed laser deposition. Under a broad range of processing conditions we explored, PZT deposited directly on diamond is almost exclusively pyrochlore-type, which is nonferroelectric. Growth of ferroelectric perovskite PZT is promoted via the use of a PbTiO3 buffer layer within a narrow window of processing parameters [i.e., P(O2)=100–200 mTorr, T=550–650 °C, 1–2 J/cm2]. Similar results were also obtained for deposition of PZT on Si, Pt-coated Si, and Pt-coated diamond substrates. The dielectric constants of the perovskite PZT films are 500–650 at 1 V and 100 kHz. The piezoelectric coefficients of these films are in the range of 50×10−12–350×10−12 m/V. The SAW velocity of perovskite PZT films is similar to that of highly oriented sputter deposited ZnO films. The acoustic attenuation in per...

Parallel synthesis together with high-throughput screening was used to identify candidate materials for integrated circuit applications that demand a superior high permittivity dielectric thin film. Specifically, we developed a continuous-composition spread (CCS) technique to synthesize much of a pseudoternary oxide system in a single deposition and used this in conjunction with a high-throughput measurement protocol, thereby allowing each chemical system to be deposited and evaluated in about 24 h. This approach led to the identification of compositions in the Zr-Sn-Ti-O system with promising properties. The same technique was used to determine the optimum compositions as a function of processing parameters. Films with the composition Zr .2 Sn .2 Ti .6 O 2 were then prepared using a conventional synthetic technique (on-axis sputtering) and were verified to have excellent properties. Thus, the CCS technique has demonstrated utility in rapidly identifying and developing a useful new material.

Thin films of NiFe2O4 were deposited on SrTiO3 (001) and Y0.15Zr0.85O2 (yttria-stabilized zirconia) (001) and (011) substrates by 90°-off-axis sputtering. Ion channeling, x-ray diffraction, and transmission electron microscopy studies reveal that films grown at 600 °C consist of ∼300 Å diameter grains separated by thin regions of highly defective or amorphous material. The development of this microstructure is attributed to the presence of rotated or displaced crystallographic domains and is comparable to that observed in other materials grown on mismatched substrates (e.g., GaAs/Si or Ba2YCu3O7/MgO). Postdeposition annealing at 1000 °C yields films that are essentially single crystal. The magnetic properties of the films are strongly affected by the structural changes; unannealed films are not magnetically saturated even in an applied field of 55 kOe, while the annealed films have properties comparable to those of bulk, single crystal NiFe2O4. Homoepitaxial films grown at 400 °C also are essentially single crystal.

The high brilliance of third generation undulator sources offers an unprecedented opportunity to perform coherent X-ray diffraction studies of the structure and dynamics of materials on length scales down to interatomic spacings. We have measured the coherent diffraction or “speckle” pattern from a GaAsAlAs superlattice. The speckle diffraction is consistent with height fluctuations of the superlattice of ∼10 A over lengths of order 60 μm. Unlike other methods of characterizing the roughness of semiconductor material, such as scanning probe microscopies (STM, AFM) or scanning electron microscopy (SEM), this novel coherent diffraction method is sensitive to lateral variations of the interface height buried within the small illuminated volume of the material, and thus can offer information unavailable from other non-destructive techniques.

α-hexathienyl (α–6T) is a highly promising material for application in thin film transistor devices. Recently, record high mobilities, together with record high current on/off ratios, have been reported.1 Thus far, structural information on this exciting material is sketchy. The crystal structures of several such hexamers have been investigated, but only with powder samples, since the crystal growth has proven exceedingly difficult.2-5 Powder Rietveld refinements on these materials are severely hampered by the large number of overlapping reflections, preferred orientation, ambiguities in symmetry, etc. Here, we present a crystal structure of the high-temperature polymorph of α–6T (α–6T/HT), as determined from a single-crystal structure analysis. In this polymorph, the hexamer crystallizes in the smallest unit cell so far reported for this material, but the molecule is flat. Extended Hückel theory (EHT) band structure calculations show that α–6T/HT is an indirect gap semiconductor, with the conduction band minimum at Y and the valence band maximum at Γ. The conduction and valence bands both show a remarkable degree of dispersion along X and Y for a molecular crystal. The electronic band structure of this material is strikingly similar to that of the two-dimensional organic superconductors based on bis(ethylenedithio)tetrathiafulvalene (ET), such as κ−(ET)2 Cu(NCS)2.

Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (∼104 - 106 cm−2) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at Ec-2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be Nt = 3 × 1012, 2 × 1015, and 5 × 1014 cm−3, respectively. The Ec-2.92 eV level is observed to be the primary compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is ...

We report x-ray photon correlation spectroscopy studies of the static structure factor and dynamic correlation function of a gold colloid dispersed in the viscous liquid glycerol. We find a diffusion coefficient for Brownian motion of the gold colloid which agrees well with that extrapolated from measurements made with visible light, but which was determined on an optically opaque sample and in a wave-vector range inaccessible to visible light.

We have investigated the synthesis, structure, and electronic properties of ${(\mathrm{N}{\mathrm{H}}_{3})}_{x}{\mathrm{K}}_{3}{\mathrm{C}}_{60}$ by exposing preformed ${\mathrm{K}}_{3}$${\mathrm{C}}_{60}$ to N${\mathrm{H}}_{3}$ vapor. Measurements were made on bulk powders and films with a variety of techniques including in-situ x-ray diffraction and monitoring of N${\mathrm{H}}_{3}$ pressure, Raman scattering and ac susceptibility. The reaction of N${\mathrm{H}}_{3}$ with ${\mathrm{K}}_{3}$${\mathrm{C}}_{60}$ is completely reversible and leaves the ${({\mathrm{C}}_{60})}^{3\ensuremath{-}}$ charge state intact, while allowing the distance between the ${\mathrm{C}}_{60}$ molecules to vary. We observe two different crystallographic structures at $x=1$ and $x=8\ensuremath{-}10$. The $x=1$ structure is face-centered orthorhombic with a single N${\mathrm{H}}_{3}$ on the octahedral interstitial site. It is single phase at 100\ifmmode^\circ\else\textdegree\fi{}C and N${\mathrm{H}}_{3}$ pressures \ensuremath{\ge}400 torr and remains single phase at 0 torr if the temperature is reduced to 25\ifmmode^\circ\else\textdegree\fi{}C. Although (N${\mathrm{H}}_{3}$)${\mathrm{K}}_{3}$${\mathrm{C}}_{60}$ exhibits no superconductivity at ambient pressure, superconductivity can be induced by hydrostatic pressure with an onset at 28 K. The details of the $x=8\ensuremath{-}10$ structure are uncertain, however it appears that this phase is body-centered tetragonal with N${\mathrm{H}}_{3}$ on both the octahedral and tetrahedral sites. It occurs at room temperature and N${\mathrm{H}}_{3}$ pressures \ensuremath{\ge}500 torr, but is not stable at lower N${\mathrm{H}}_{3}$ pressures. Resistivity measurements of N${\mathrm{H}}_{3}$-doped ${\mathrm{K}}_{3}$${\mathrm{C}}_{60}$ films show that the formation of the new structure results in a rapid increase of the resistivity to values exceeding 1 \ensuremath{\Omega} cm.

We report the synthesis of a new strontium ruthenium oxycarbonate, Sr2RuO4 · 0.25 CO2, and its use to synthesize Sr3Ru2O7, the n = 2 member of the (SrO)n+1 (RuO2)n Ruddlesden-Popper series. Like layered K2NiF4-type Sr2RuO4, and three-dimensional perovskite-type SrRuO3, Sr3Ru2O7 is a metallic conductor. In Sr3Ru2O7, the magnetic moments (d4, low spin) interact weakly with each other and develop strong antiferromagnetic correlations below 15 K. Small substitutions of Ir for Ru in Sr3Ru2O7 result in a metal-insulator transition.

C 60 films up to 1000 A in thickness have been grown by room-temperature sublimation onto Si(100) and Si(111) substrates that have been prepared with surfaces passivated against dangling bonds. X-ray diffraction measurements reveal that films deposited on such substrates have a high degree of (111)-textured crystallinity which is absent in films deposited on untreated Si. Examination of surface topographies with tapping mode atomic force microscopy shows a thickness-dependent increase in roughness which is greater for the treated samples. Our results are placed in context with respect to what is presently known about the growth of C 60 films on a variety of substrates. Implications for possible device applications will also be discussed.

Asymmetrically cut perfect crystals, in both the Laue and Bragg geometries, are examined as single crystal monochromators for x‐ray beams that are collimated to a small fraction of the Darwin width, as is typical in experiments with coherent x rays. Both the Laue and asymmetric Bragg geometries are plagued by an inherent chromatic aberration that increases the beam divergence much beyond that of the symmetric Bragg geometry. Measurements from a recent experiment at the ESRF are presented to compare Si(220) (symmetric Bragg), diamond(111) (asymmetric Laue), and diamond(111) (symmetric Bragg inclined) geometries.

We report superconductivity in Cs3C60 at 40K using ac susceptibility measurements under hydrostatic conditions up to 15 kbar. Cs3C60 was prepared by reaction of C60 with Cs in liquid ammonia, followed by heating at 150°C. This route circumvents formation of the energetically more stable Cs1C60 and Cs4C60 phases. We have studied the synthesis and phase formation by measuring the symmetric Ag pentagonal pinch mode of C60 using Raman spectroscopy. Whereas Raman spectroscopy indicates homogeneous charge transfer of three electrons, x-ray diffraction indicates two phases other than the commonly observed fcc structure. This superconducting transition temperature is considerably higher than for known doped C60 compounds and intermetallic compounds.

An estimated one third of all American and United Kingdom women take hormone therapy. In sharp contrast to these numbers, as many as one half of women diagnosed with breast cancer have taken hormones. Little additional information is available regarding the risk of breast cancer and even less is known about the association between hormone therapy and fibrocystic (FCD) disease or atypia of the breast. Three hundred women between 30 and 50 years of age were enrolled in this study, including 120 taking hormone replacement (HRT) therapy and 180 women who had never taken hormone therapy. These women were divided into four categories including those with normal breast tissue, those with FCD disease, those with cellular atypia, and those with breast cancer. Another group of women were also identified who had breast implants. Using breast enhanced scintigraphy (BEST) imaging, changes in breast tissue were determined and compared according to the use of HRT. Forty percent (122 of 300) had “normal” breasts, of whom 68.8% (84 of 122) did not take HRT. This accounted for 46.7% (84 of 180) of the women not taking hormone therapy, while only 31.7% (38 of 120) of the women taking HRT had normal breasts. This difference was statistically (p.001) significant. There was a greater incidence of breast abnormality in women taking HRT and a lower incidence in pathology among women not taking HRT when cumulatively analyzed for FCD, cellular atypia, and breast cancer. This difference was statistically significant (p.001) for women with breast cancer where 62.5% (10 of 16) were women taking HRT. Although the study was relatively small, it is the first such study to compare a continuum of changes in breast tissue according to the use of HRT. The study suggests that the initial empirical observations regarding higher incidence of HRT among women with breast cancer, may have a relationship to underlying changes in breast tissue that are associated with differences in mitochondrial content and activity. Further investigation is needed.

Thin-film multilayer structures with up to 20 repeat layers have been grown in a high-vacuum chamber by sequential deposition of aluminum (Al) and fullerene (${\mathrm{C}}_{60}$) onto room-temperature substrates. The periodicity of the layers is confirmed by x-ray-diffraction and in situ resistance measurements. The presence of underlying layers of ${\mathrm{C}}_{60}$ reduces the critical thickness at which Al becomes conducting from \ensuremath{\sim}35 to \ensuremath{\sim}20 \AA{}. In addition, there is a sudden increase in resistance that occurs when each Al layer is covered by a monolayer of ${\mathrm{C}}_{60}$. These observations, together with the measurement of a downward shift in frequency of a considerably broadened Raman-active ${\mathit{A}}_{\mathit{g}}$(2) pentagonal-pinch mode, imply that up to six electrons per ${\mathrm{C}}_{60}$ are transferred from the Al to the ${\mathrm{C}}_{60}$ layer. This demonstration of charge transfer across planar metal-${\mathrm{C}}_{60}$ interfaces suggests that multilayers may be a useful vehicle for forming fullerene interface compounds in two-dimensional structures.

We report synthesis, structures and properties of strontium intercalated fullerite, SrxC60 compounds. This is identified as the only fulleride system where fcc and bcc phases compete in the same compositional range. In the vicinity of x=3, a bcc A15 phase coexists with a fcc phase with lattice constants 11.140 and 14.144 A, respectively. For Sr6C60, an Im 3 bcc phase with ao=10.975 A is observed. This phase becomes superconducting at T=4 K. These structural and electronic properties, being intermediate to grossly different calcium and barium intercalated fullerides, provide a unifying picture of all alkaline-earth intercalated fullerides.

The quaternary intermetallic compounds LnPt 2 B 2 C (Ln=La, Pr and Y) were recently shown to be superconducting at temperatures up to 10.5 K. Annealing conditions were not found, however, which yielded single-phase material. Here it is reported that the partial substitution of Au for Pt in LnPt 2 B 2 C yields essentially single-phase polycrystalline material under annealing conditions readily accessible by conventional techniques. This is accomplished through arcmelting LnPt 1.5 Au 0.6 B 2 C, a composition slightly superstoichiometric in transition metal, and annealing at 1100°C in Ta foil: a small amount of melt phase formed in the anneal is wicked away from the sample leaving good-quality material behind.

Previous high-resolution electron microscopy (HREM) observations of the carbon nanotubes have led to a "Russian doll" structural model that is based on hollow concentric cylinders capped at both ends. The structures of the carbon nanotubes and particles were characterized here by bulk physical and chemical property measurements. The individual nanostructure is as compressible as graphite in the c axis, and such nanostructures can be intercalated with potassium and rubidium, leading to a saturation composition of "MC 8 ." These results are counter to expectations that are based on a Russian doll structure. HREM after intercalation with potassium and deintercalation indicates that individual nanoparticles are a "paper-mache" of smaller graphite layers. Direct current magnetization and electron spin resonance measurements indicate that the electronic properties of the nanostructures are distinctly different from those of graphite. Although the nanostructures have distinct morphologies and electronic properties, they are highly defective and have a local structure similar to turbostratic graphite.

Crystalline films of C60 with ~1 μm grain size and a preferred [111] texture have been doped with K and Rb to form superconducting compositions that have sharp zero-resistance transitions. The temperature dependence of the resistance above Tc for both K3C60 and Rb3C60 films reveals metallic behavior up to temperatures as high as 520 K without any evidence of saturation. For Rb3C60, electronic mean free paths significantly shorter than nearest-neighbor C60 distances and anomalously high values of the electron-phonon coupling strength are inferred. These results suggest that there is a strong interaction between the conduction electrons and the intramolecular vibrational modes and also bring into question the assumption that all of the donated charge (three electrons per C60) is itinerant.

The irradiation of sublimed fullerene (C60 and C70) thin films with ultraviolet light in an oxygen-rich ambient has been found to lead to a substantially increased cohesive energy in the fullerene solid. The decreased solubility and lower vapor pressure of the phototransformed material enables wet (organic solvents) or dry (thermal or photon-induced sublimation) development of photo-defined negative images. One micrometer wide lines with good edge definition are demonstrated. X-ray, infrared, optical absorption, and high performance liquid chromatography reveal that photo-oxygenated C60 retains its fcc crystal structure but with a substantial fraction of the C60 molecules modified with carbonyl (C=O) bonds.

A new stable compound ${\mathrm{Ba}}_{3}$${\mathrm{C}}_{60}$ is reported in the Ba-${\mathrm{C}}_{60}$ phase diagram. Rietveld refinement of x-ray powder diffraction data shows that this compound has the A15 structure with a lattice constant of 11.34 \AA{}. The Pm3\ifmmode\bar\else\textasciimacron\fi{}n space group implies a perfect alternating orientational order for the ${\mathrm{C}}_{60}$ molecules, not previously observed in doped fullerite structures. The relative stability of the A15 phase over the fully intercalated fcc structure can be explained by a simple model involving the Madelung energy differences, orientation dependence of the ${\mathrm{C}}_{60}$-cation interaction energy, and distortion-induced relaxational energy gains.

The dielectric loss in amorphous, thin-film oxide insulators produces a real part of the ac conductivity σ′(ω) that scales as ωs with s∼1. Conventional models explain this frequency dependence by hopping or tunneling of charge between neighboring defect sites. These models fail at low temperatures since they predict that σ′ should vanish at T=0. We observe that the ac conductivity of Ta2O5, ZnO, and SiO2 has a nonzero extrapolated value at T=0. We propose that this behavior is consistent with the predictions of a Coulomb glass, an insulator with a random distribution of charged defects.The dielectric loss in amorphous, thin-film oxide insulators produces a real part of the ac conductivity σ′(ω) that scales as ωs with s∼1. Conventional models explain this frequency dependence by hopping or tunneling of charge between neighboring defect sites. These models fail at low temperatures since they predict that σ′ should vanish at T=0. We observe that the ac conductivity of Ta2O5, ZnO, and SiO2 has a nonzero extrapolated value at T=0. We propose that this behavior is consistent with the predictions of a Coulomb glass, an insulator with a random distribution of charged defects.

Alkali metal fullerides (A x C 60 ) are a subject of considerable current interest because of the occurrence of superconductivity for A x C 60 at temperatures surpassed only by the high T c copper oxides. The preparation and characterization of A x C 60 (A = alkali metal, x = 2,3,4,6) by powder X-ray diffraction, NMR ( 13 C, 23 Na and 87 Rb), and d.c. magnetization are reported. The structures are described as intercalation compounds of the FCC structure of pristine c 60 or of hypothetical BCC or BCT structures. The structures and phase diagrams can be rationalized on the basis of ion size and electrostatic considerations. Only the A 3 C 60 compounds are metallic (and superconducting). The superconducting T c increases nearly linearly with unit cell size. EHT (Extended Huckel Theory) calculations and 13 C NMR relaxation measurements indicate higher densities of states for the higher T c compositions.

INTERCALATING solid C60 with dopant atoms yields materials with a remarkable range of properties1. Alkali metal atoms, for example, readily form charge-transfer compounds2,3, AxC60 (where A is an alkali metal), which can be metallic, superconducting or insulating depending on the dopant concentration4–9. In all cases, the superconducting phase has a face-centred cubic (f.c.c.) structure and stoichiometry A3C60, which suggests a common mechanism for superconductivity dependent, at least in part, on the external coordination number of the C60 molecules. More recently, it has been shown10 that the alkaline earth metal calcium can also be intercalated with fulleride to form a superconducting phase, again with a f.c.c.-derived structure, near a Ca:C60 ratio of 5:1. Here we report the intercalation of fulleride with barium, in which a pure body-centred cubic phase with a lattice constant of 11.171 A is realized near a stoichiometry of Ba6C60. This phase is also superconducting (with a transition temperature of 7 K), suggesting that the mechanism of superconductivity is related to an intrinsic property of the C60 molecules, rather than the external coordination number.

Single-crystal epitaxial thin films of the isotropic metallic oxides Sr1–xCaxRuO3 (0 ≤ x ≤ 1) were grown on miscut SrTiO3(100) substrates in situ by 90° off-axis sputtering. These thin films exhibit low isotropic resistivities, excellent chemical and thermal stability, good surface smoothness, and high crystalline quality. Furthermore, the lattice parameters and magnetic properties can be varied by simply changing the strontium/calcium ratio. These epitaxial thin films, and their multilayer structures with other oxide materials, can be used for the fabrication of superconducting, ferroelectric, magneto-optic, and electro-optic devices.

Alkali metal fullerides (A x C 60 ) are a subject of considerable current interest because of the occurrence of superconductivity for A x C 60 at temperatures surpassed only by the high T c copper oxides. The preparation and characterization of A x C 60 (A = alkali metal, x = 2,3,4,6) by powder X-ray diffraction, NMR ( 13 C, 23 Na and 87 Rb), and d.c. magnetization are reported. The structures are described as intercalation compounds of the FCC structure of pristine c 60 or of hypothetical BCC or BCT structures. The structures and phase diagrams can be rationalized on the basis of ion size and electrostatic considerations. Only the A 3 C 60 compounds are metallic (and superconducting). The superconducting T c increases nearly linearly with unit cell size. EHT (Extended Huckel Theory) calculations and 13 C NMR relaxation measurements indicate higher densities of states for the higher T c compositions.

Through careful material synthesis and powder X-ray diffraction characterization it is shown that (1) there are no significant metal atom nonstoichiometries in the superconducting T' structure phase in the Nd-Ce-Cu-O system which allow it to deviate from the line of composition Nd2−xCexCuO4−δ when synthesised under optimal conditions, and (2) to a very high resolution, the Nd2−xCexCuO4−δ T' phase is a true chemical solid solution, with no composition regions of phase separation, over the range of Ce doping relevant to physical property characterization, 0⩽x⩽0.175. High resolution diffraction measurements reveal a subtle distribution of average c-axis lengths for Nd1.85Ce0.15CuO4−δ not present for other compositions in the solid solution.

Bulk-sensitive, polarization-dependent oxygen K- and copper L-edge absorption spectra of single-domain ${\mathrm{La}}_{2\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Sr}}_{\mathit{x}}$${\mathrm{CuO}}_{4}$ with ${\mathrm{CuO}}_{2}$ planes tilted off the sample surface were measured. A novel experimental configuration was utilized to achieve complete polarization geometry and eliminate optical path variations. Contrary to previous measurements, our data show for both intrinsic and doped holes a significant amount of O2${\mathit{p}}_{\mathit{z}}$ character, likely associated with apical O, but a very weak Cu3${\mathit{d}}_{3\mathit{z}}^{2}$-${\mathit{r}}^{2}$ character. The quantitative results impose strong contraints on superconductivity models invoking out-of-plane orbitals, and suggest that the apical O 2${\mathit{p}}_{\mathit{z}}$ orbital may play an important role in high-${\mathit{T}}_{\mathit{c}}$ phenomena.

We report the results of $^{13}\mathrm{C}$ NMR measurements on ${\mathrm{K}}_{3}$${\mathrm{C}}_{60}$ and ${\mathrm{Rb}}_{3}$${\mathrm{C}}_{60}$ in the normal and superconducting states. Electronic densities of states at the Fermi energy in the normal-state and energy gaps in the superconducting state are estimated from spin-lattice-relaxation data. Implications of the relaxation and spectral data for the electronic properties of these materials are discussed.

IT has been demonstrated1–6 that solid C60 can be readily intercalated with group IA alkali metals to give metallic or insulating compounds, depending on the dopant concentration. The metal atoms diffuse into tetrahedral and octahedral interstitial sites of the C60 lattice with little disturbance to the face-centred cubic (f.c.c.) packing7. The A3C60f.c.c. phases (A is K, Rb, Cs and mixtures of these) exhibit superconductivity with a transition temperature that increases with lattice constant8. At higher dopant concentration a body-centred tetragonal A4C60 phase9 and an insulating, body-centred cubic A4C60 phase10 are found. Here we report that the divalent group IIA intercalant calcium can be intercalated into the f.c.c. sites of C60 to form a solid solution, and that, near a Ca:C60 ratio of 5:1, a phase transformation occurs to a simple cubic phase. Measurements of microwave loss, magnetic susceptibility and Meissner effect show that the simple cubic phase becomes superconducting below 8.4 K.

The recent synthesis of macroscopic quantities of spherical molecular carbon compounds, commonly called fullerenes, has stimulated a wide variety of studies of the chemical and physical properties of this novel class of compounds. We discovered that the smallest of the known fullerenes, C60, could be made conducting and superconducting by reaction with alkali metals. In this paper, an overview of the motivation for these discoveries and some recent results are presented.