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An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ∼45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation.

Recently, several creative processing techniques yielded thermoelectrics with reduced thermal conductivity and, thereby, an enhanced figure or merit. These were based on engineered complex microstructures with attendant dislocation structures. In this study, we implement highly controlled mesoscopic dislocation structures into the model thermoelectric SrTiO₃ in order to quantify phonon scattering at dislocations. Both single crystals and polycrystalline material have been furnished with enhanced dislocation densities increased by a factor of 150–300 by plastic deformation. Thermal conductivity was measured using laser flash analysis between room temperature and 325 °C. Etch pit techniques and ultra-high voltage electron microscopy afford quantification of dislocation density. Experimental results were compared to predictions by the Debye-Callaway model. The latter revealed that dislocation densities of 10¹⁵ m⁻² would be necessary for the reduction of thermal conductivity of SrTiO₃ in the investigated temperature range, which could not be realized using the plastic deformation mechanism applied.

Dislocations are 1D crystallographic line defects and are usually seen as detrimental to the functional properties of classic semiconductors. It is shown here that this not necessarily accounts for oxide semiconductors in which dislocations are capable of boosting the photoconductivity. Strontium titanate single crystals are controllably deformed to generate a high density of ordered dislocations of two slip systems possessing different mesoscopic arrangements. For both slip systems, nanoscale conductive atomic force microscope investigations reveal a strong enhancement of the photoconductivity around the dislocation cores. Macroscopic in-plane measurements indicate that the two dislocation systems result in different global photoconductivity behavior despite the similar local enhancement. Depending on the arrangement, the global photoresponse can be increased by orders of magnitude. Additionally, indications for a bulk photovoltaic effect enabled by dislocation-surrounding strain fields are observed for the first time. This proves that dislocations in oxide semiconductors can be of large interest for tailoring photoelectric functionalities. Direct evidence that electronic transport is confined to the dislocation core points to a new emerging research field.

Functional and structural ceramics have become irreplaceable in countless high-tech applications. However, their inherent brittleness tremendously limits the application range and, despite extensive research efforts, particularly short cracks are hard to combat. While local plasticity carried by mobile dislocations allows desirable toughness in metals, high bond strength is widely believed to hinder dislocation-based toughening of ceramics. Here, we demonstrate the possibility to induce and engineer a dislocation microstructure in ceramics that improves the crack tip toughness even though such toughening does not occur naturally after conventional processing. With modern microscopy and simulation techniques, we reveal key ingredients for successful engineering of dislocation-based toughness at ambient temperature. For many ceramics a dislocation-based plastic zone is not impossible due to some intrinsic property (e.g. bond strength) but limited by an engineerable quantity, i.e. the dislocation density. The impact of dislocation density is demonstrated in a surface near region and suggested to be transferrable to bulk ceramics. Unexpected potential in improving mechanical performance of ceramics could be realized with novel synthesis strategies.

Rapid densification of ceramics has been realized and its merits were demonstrated through multiple approaches out of which UHS and flash sintering attract recent attention. So far, however, scalability remains difficult. A rise in throughput and scalability is enabled by the introduction of blacklight sintering powered by novel light source technology. Intense illumination with photon energy above the bandgap (blacklight) allows high absorption efficiency and, hence, very rapid, contactless heating for all ceramics. While heating the ceramic directly with light without any furnace promises scalability, it simultaneously offers highly accurate process control. For the technology transfer to industry, attainable material quality needs to be assured. Here, we demonstrate the excellent microstructure quality of blacklight‐sintered ceramics observed with ultrahigh voltage electron microscopy revealing an option to tune nanoporosity. Moreover, we confirm that electronic, electron, oxygen, and lithium‐ion conductivities are equal to conventionally sintered ceramics. This gives the prospect of transmitting the merits of rapid densification to the scale of industrial kilns.