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133 results on '"Letertre, F."'

1. Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates

Author

Meuris, M., De Jaeger, B., Van Steenbergen, J., Bonzom, R., Caymax, M., Houssa, M., Kaczer, B., Leys, F., Martens, K., Opsomer, K., Pourghaderi, A. M., Satta, A., Simoen, E., Terzieva, V., Van Moorhem, E., Winderickx, G., Loo, R., Clarysse, T., Conard, T., Delabie, A., Hellin, D., Janssens, T., Onsia, B., Sioncke, S., Mertens, P. W., Snow, J., Van Elshocht, S., Vandervorst, W., Zimmerman, P., Brunco, D., Raskin, G., Letertre, F., Akatsu, T., Billon, T., Heyns, M., Itoh, Kiyoo, editor, Lee, Thomas, editor, Sakurai, Takayasu, editor, Sansen, Willy M. C., editor, Schmitt-Landsiedel, Doris, editor, Dimoulas, Athanasios, editor, Gusev, Evgeni, editor, McIntyre, Paul C., editor, and Heyns, Marc, editor

Published
2007
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2. Advanced High-Mobility Semiconductor-on-Insulator Materials

Author

Ghyselen, B., Cayrefourcq, I., Kennard, M., Letertre, F., Akatsu, T., Celler, G., Mazure, C., Itoh, Kiyoo, editor, Lee, Thomas, editor, Sakurai, Takayasu, editor, Sansen, Willy M. C., editor, Schmitt-Landsiedel, Doris, editor, Dimoulas, Athanasios, editor, Gusev, Evgeni, editor, McIntyre, Paul C., editor, and Heyns, Marc, editor

Published
2007
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3. Smart Cut Technology: The Path for Advanced SOI Substrates

Author

Moriceau, H., Lagahe-Blanchard, C., Fournel, F., Pocas, S., Jalaguier, E., Perreau, P., Deguet, C., Ernst, T., Beaumont, A., Kernevez, N., Hartman, J.M., Ghyselen, B., Aulnette, C., Letertre, F., Rayssac, O., Faure, B., Richtarch, C., Cayrefourq, I., Flandre, Denis, editor, Nazarov, Alexei N., editor, and Hemment, Peter L.F., editor

Published
2005
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10. Kinetic aspects of the growth of hydrogen induced platelets in SiC

Author

Grisolia, J., Cristiano, F., De Mauduit, B., Assayag, G. Ben, Letertre, F., Aspar, B., Di Cioccio, L., and Claverie, A.

Subjects
Condensed matter -- Research, Semiconductors -- Research, Silicon carbide -- Electric properties, Thin films -- Research, Physics
Abstract

A new study reports on the kinetics of the growth and nucleation of hydrogen induced platelets in H-implanted SiC.

Published
2000

12. Smart Cut Technology: The Path for Advanced SOI Substrates

Author

Moriceau, H., primary, Lagahe-Blanchard, C., additional, Fournel, F., additional, Pocas, S., additional, Jalaguier, E., additional, Perreau, P., additional, Deguet, C., additional, Ernst, T., additional, Beaumont, A., additional, Kernevez, N., additional, Hartman, J.M., additional, Ghyselen, B., additional, Aulnette, C., additional, Letertre, F., additional, Rayssac, O., additional, Faure, B., additional, Richtarch, C., additional, and Cayrefourq, I., additional

Published
2005
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15. Building engineered substrates for GaN HEMT applications

Author

Bove, P., Lahreche, H., Faure, B., Letertre, F., Boussagol, A., and Langer, R.

Subjects
Semiconductor industry, Semiconductor device, Semiconductor industry -- Services
Abstract

OVERVIEW Compound semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP) are key materials in high-frequency and optoelectronic devices. New or evolving applications pave the way for further performance […]

Published
2006

17. Study of the formation, evolution, and dissolution of interfacial defects in silicon wafer bonding.

Author

Vincent, S., Penot, J. -D., Radu, I., Letertre, F., and Rieutord, F.

Subjects
SILICON wafers, SEMICONDUCTOR wafers, SEMICONDUCTOR wafer bonding, SILICON, ANNEALING of metals
Abstract

Interface defects formed during the wafer bonding process upon annealing have been studied. Based on the hydrogen diffusion in SiO2 and the stability of the bubbles at the bonding interface, models of the growth and further dissolution of the defects are presented. Considering the hydrogen diffusion through the interfacial oxide, diffusion coefficients and activation energy (Ea=0.25 eV) are obtained. It has been shown that the defect dissolution is driven by the exodiffusion of the hydrogen toward the silicon substrates. [ABSTRACT FROM AUTHOR]

Published
2010
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18. Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H.

Author

Nguyen, Phuong, Bourdelle, K. K., Aulnette, C., Lallement, F., Daix, N., Daval, N., Cayrefourcq, I., Letertre, F., Mazuré, C., Bogumilowicz, Y., Tauzin, A., Deguet, C., Cherkashin, N., and Claverie, A.

Subjects
ION implantation, ION bombardment, PARTICLES (Nuclear physics), TRANSMISSION electron microscopy, BACKSCATTERING, SCATTERING (Physics), CHANNELING (Physics)
Abstract

We have performed systematic measurements of the splitting kinetics induced by H-only and He+H sequential ion implantation into relaxed Si0.8Ge0.2 layers and compared them with the data obtained in Si. For H-only implants, Si splits faster than Si0.8Ge0.2. Sequential ion implantation leads to faster splitting kinetics than H-only in both materials and is faster in Si0.8Ge0.2 than in Si. We have performed secondary ion mass spectrometry, Rutherford backscattering spectroscopy in channeling mode, and transmission electron microscopy analyses to elucidate the physical mechanisms involved in these splitting phenomena. The data are discussed in the framework of a simple phenomenological model in which vacancies play an important role. [ABSTRACT FROM AUTHOR]

Published
2008
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19. Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001).

Author

Personnic, S., Bourdelle, K. K., Letertre, F., Tauzin, A., Cherkashin, N., Claverie, A., Fortunier, R., and Klocker, H.

Subjects
POINT defects, DISSOCIATION (Chemistry), DISLOCATIONS in crystals, NUCLEATION, THIN films, HYDROGEN
Abstract

We study the implant-induced hydrogenated defects responsible for the Smart Cut™ layer transfer of Si (001) films. Different experimental methods are used to quantify the time dependence of the defect evolution and interactions during isothermal annealings. An optical characterization technique was developed for the statistical analysis of the formation and growth of micrometer size microcracks in the buried implanted layer. We show that the formation of molecular hydrogen is dominated by a transient phenomenon related to the rapid dissociation of the hydrogenated point defects. The impact of the H2 formation kinetics on the microcrack evolution is described and the physical mechanisms involved in their growth are identified. A comprehensive picture of the fracture phenomenon in H implanted Si leading to the full layer transfer is proposed and discussed. [ABSTRACT FROM AUTHOR]

Published
2008
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20. Low temperature diffusion of impurities in hydrogen implanted silicon.

Author

Personnic, S., Bourdelle, K. K., Letertre, F., Tauzin, A., Laugier, F., Fortunier, R., and Klocker, H.

Subjects
METAL inclusions, SILICON research, SECONDARY ion mass spectrometry, EXCHANGE reactions, ANNEALING of metals, HYDROGEN
Abstract

The effect of hydrogen implantation on the transport of impurities in silicon is studied. We use secondary ion mass spectrometry measurements to investigate the depth redistribution of oxygen, carbon, and fluorine during low temperature, ≤450 °C, isothermal anneals. Their fast migration toward the projected range region of H implants points to the existence of a strong interaction of the impurities with H-induced defects. Significantly enhanced, as compared to the literature values, diffusivities of the investigated impurities were obtained. The results reveal that hydrogen implantation can be advantageously used for the impurity profile engineering and gettering studies in silicon in the low temperatures annealing regime. [ABSTRACT FROM AUTHOR]

Published
2007
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21. The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon.

Author

Nguyen, Phuong, Bourdelle, K. K., Maurice, T., Sousbie, N., Boussagol, A., Hebras, X., Portigliatti, L., Letertre, F., Tauzin, A., and Rochat, N.

Subjects
HYDROGEN, HELIUM, SILICON, CRYSTAL defects, ELECTRON microscopy, INFRARED radiation
Abstract

In this paper we study the effect of the order and dose of H and He sequential implantation on H interaction with Si lattice defects. We use systematic infrared absorption measurements to investigate the evolution of hydrogenated point defects complexes during isothermal annealing. This analysis combined with the electron microscopy data led to the identification of the infrared absorption modes corresponding to the formation of the partially amorphized layer. The obtained results provide an important input for the optimization of the implantation conditions in order to achieve fracture in Si in the wide temperature range. [ABSTRACT FROM AUTHOR]

Published
2007
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22. Progress in microwave GaN HEMT grown by MBE on silicon and smart cut TM engineered substrates for high power applications

Author

Larhèche, H., Faure, B., Richtarch, C., Letertre, F., Langer, R., and Bove, P.

Subjects
ING-INF/01 Elettronica
Abstract

SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative possible substrates for epitaxial growth of Wide Band Gap (WBG) materials such as GaN and GaN alloys. Similar to bonded SOI structure, the SiCOI structures basically comprises a thin film of single SiC crystal bonded onto a substrate such as, for instance, silicon substrate. Additionally to the well known insulation properties, SiCOI substrates have been proven to be adapted to the growth of high quality GaN layer. This first study has proven compatibility of SiCOI structure for single layer GaN MBE growth. We present here last results of AlGaN / GaN HEMT structure grown by MBE with NH3 as nitrogen precursor onto SiCOI (on silicon) structure realised by Smart Cut ™. First of all, complete SiCOI structure realisation will be described and typical physical characterization results will be presented for this kind of substrate. Then, will be detailed MBE epitaxy set-up and growth parameters for HEMT structure, including specific buffer layer stack description. Finally, physical and electrical characterisation results for epi-layers and HEMT structure will be presented. Those results show strong compatibility of SiCOI structure for MBE epitaxy of GaN based HEMT structure and demonstrate the interest of Smart Cut ™ approach to build composite substrates, like SiCOI, for hetero-epitaxy application.

Published
2005

23. Large grain polySiC boules for wafer-bounding

Author

Chichignoud, G., Blanquet, E., Anikin, M., Bluet, J.M., Chaudouët, P., Moisson, C., Pernot, Etienne, Mermoux, Michel, Letertre, F., Pons, M., Madar, R., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2005

24. Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates

Author

Meuris, M., primary, Jaeger, B., additional, Steenbergen, J., additional, Bonzom, R., additional, Caymax, M., additional, Houssa, M., additional, Kaczer, B., additional, Leys, F., additional, Martens, K., additional, Opsomer, K., additional, Pourghaderi, A. M., additional, Satta, A., additional, Simoen, E., additional, Terzieva, V., additional, Moorhem, E., additional, Winderickx, G., additional, Loo, R., additional, Clarysse, T., additional, Conard, T., additional, Delabie, A., additional, Hellin, D., additional, Janssens, T., additional, Onsia, B., additional, Sioncke, S., additional, Mertens, P. W., additional, Snow, J., additional, Elshocht, S., additional, Vandervorst, W., additional, Zimmerman, P., additional, Brunco, D., additional, Raskin, G., additional, Letertre, F., additional, Akatsu, T., additional, Billon, T., additional, and Heyns, M., additional

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26. SiC On Insulator as substrate for power Schottky diodes

Author

Daval, N., Templier, F, Letertre, F., Planson, Dominique, Cioccio, Léa, Raynaud, Christophe, Chante, Jean-Pierre, Billon, T., Planson, Dominique, Silicon-on-Insulator Technologies (SOITEC), Parc Technologique des Fontaines, Centre de génie électrique de Lyon (CEGELY), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Smart-cut, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Schottky diodes, Wafer bonding, SiCOI, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; Recently INFINEON and other companies announced the market introduction of their SiC Schottky rectifiers in the range of 600 V several amperes. This announcement allows the design of power electronic systems with a cooling effort drastically reduced than required before, which is a great improvement for electronics in terms of cost and efficiency. However SiC components are still checked by an expensive substrate supplying and by the small 3 inches size of the SiC wafers.SiCOI substrate presents the capability of large sized handle wafers, allowing the utilization of 4,6 or 8 inches facilities. In addition the fabrication of numerous SiCOI substrates requires a single SiC substrate as illustrated in figure 1. This later point should make SiCOI a low cost SiC substrate. The purpose of this article is to give the first electrical characteristics of a Schottky rectifier on that promising substrate.

Published
2002

27. X-ray diffraction imaging investigation of silicon carbide on insulator structures

Author

Milita S. 1, Le Tiec Y. 2, Pernot E. 3, Di Cioccio L. 2, Hartwig J. 4, Baruchel J. 4, Servidori M. 1, and Letertre F. 5

Subjects
Synchrotron Topography, lattice defects, SiC on insulator
Abstract

A new process was recently developed to manufacture silicon carbide on insulator structures (SiCOI). The process consists of several steps: (i) hydrogen implantation into an oxidised SiC wafer, (ii) bonding the oxidised surface of this wafer to an oxidised silicon substrate and (iii) high temperature splitting of a thin SiC film from the SiC wafer at the depth of the maximum hydrogen concentration and further annealing of the splitted film. The defect generation occurring during this process was investigated by synchrotron radiation X-ray diffraction topography, with special emphasis on to the last two steps. Various X-ray topographic techniques were used to characterise the lattice defects inside the SiC wafer, to quantify the strong lattice distortion near the edges of the splitted SiC film and to reveal SiC film regions lost during the splitting process. Moreover, we show that the strain fields of dislocations, observed in the silicon substrate after high temperature splitting and annealing of the splitted structure, induce a corresponding deformation in the thin SiC overlayer, despite the presence of the sandwiched oxide film. The defect density is much lower in the central region of the SiCOI structure.

Published
2002

30. Monolithic III-V/Si Integration

Author

Fitzgerald, Eugene, primary, Bulsara, M. T., additional, Bai, Y., additional, Cheng, C., additional, Liu, W. K., additional, Lubyshev, Dmitri, additional, Fastenau, Joel, additional, Wu, Y., additional, Urtega, M., additional, Ha, W., additional, Bergman, J., additional, Briar, B., additional, Drazek, C., additional, Daval, Nicolas, additional, Letertre, F., additional, Hoke, W. E., additional, LaRoche, J. R., additional, Herrick, K. J., additional, and Kazior, T. E., additional

Published
2009
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32. Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H

Author

Nguyen, Phuong, primary, Bourdelle, K. K., additional, Aulnette, C., additional, Lallement, F., additional, Daix, N., additional, Daval, N., additional, Cayrefourcq, I., additional, Letertre, F., additional, Mazuré, C., additional, Bogumilowicz, Y., additional, Tauzin, A., additional, Deguet, C., additional, Cherkashin, N., additional, and Claverie, A., additional

Published
2008
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33. Monolithic III-V/Si integration

Author

Fitzgerald, E.A., primary, Bulsara, M.T., additional, Bai, Y., additional, Cheng, C., additional, Liu, W.K., additional, Lubyshev, D., additional, Fastenau, J.M., additional, Wu, Y., additional, Urtega, M., additional, Ha, W., additional, Bergman, J., additional, Brar, B., additional, Drazek, C., additional, Daval, N., additional, Letertre, F., additional, Hoke, W.E., additional, LaRoche, J.R., additional, Herrick, K.J., additional, and Kazior, T.E., additional

Published
2008
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37. Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium

Author

Deguet, C., primary, Sanchez, L., additional, Akatsu, T., additional, Allibert, F., additional, Dechamp, J., additional, Madeira, F., additional, Mazen, F., additional, Tauzin, A., additional, Loup, V., additional, Richtarch, C., additional, Mercier, D., additional, Signamarcheix, T., additional, Letertre, F., additional, Depuydt, B., additional, and Kernevez, N., additional

Published
2006
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40. Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique

Author

Gurskii, A. L., primary, Lutsenko, E. V., additional, Pavlovskii, V. N., additional, Zubialevich, V. Z., additional, Yablonskii, G. P., additional, Aleksiej?nas, R., additional, Jara?i?nas, K., additional, Letertre, F., additional, Faure, B., additional, Schineller, B., additional, Alam, A., additional, Heuken, M., additional, Dikme, Y., additional, Kalisch, H., additional, and Jansen, R. H., additional

Published
2005
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41. Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates

Author

Fieger, M., primary, Dikme, Y., additional, Jessen, F., additional, Kalisch, H., additional, Noculak, A., additional, Szymakowski, A., additional, v. Gemmern, P., additional, Faure, B., additional, Richtarch, C., additional, Letertre, F., additional, Heuken, M., additional, and Jansen, R. H., additional

Published
2005
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44. Smart Cut TM SiCOI wafers for MBE GaN epitaxy

Author

Letertre, F., primary, Brault, J., additional, Matko, I., additional, Enjalbert, F., additional, Bellet‐Amalric, E., additional, Feuillet, G., additional, Richtarch, C., additional, Faure, B., additional, DiCioccio, L., additional, Madar, R., additional, Daudin, B., additional, and Monroy, E., additional

Published
2003
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45. New layer transfers obtained by the SmartCut process

Author

Moriceau, H., primary, Fournel, F., additional, Aspar, B., additional, Bataillou, B., additional, Beaumont, A., additional, Morales, C., additional, Cartier, A. M., additional, Pocas, S., additional, Lagahe, C., additional, Jalaguier, E., additional, Soubie, A., additional, Biasse, B., additional, Sousbie, N., additional, Sartori, S., additional, Michaud, J. F., additional, Letertre, F., additional, Rayssac, O., additional, Cayrefourcq, I., additional, Richtarch, C., additional, Daval, N., additional, Aulentte, C., additional, Akatsu, T., additional, Osternaud, B., additional, Ghyselen, B., additional, and Mazuré, C., additional

Published
2003
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47. Advanced High-Mobility Semiconductor-on-Insulator Materials.

Author

Itoh, Kiyoo, Lee, Thomas, Sakurai, Takayasu, Sansen, Willy M. C., Schmitt-Landsiedel, Doris, Dimoulas, Athanasios, Gusev, Evgeni, McIntyre, Paul C., Heyns, Marc, Ghyselen, B., Cayrefourcq, I., Kennard, M., Letertre, F., Akatsu, T., Celler, G., and Mazure, C.

Abstract

Silicon-on-Insulator (SOI) is today the substrate of choice for several applications. In order to boost further circuit performance, new solutions are being explored. In particular, increasing the charge carrier mobility has been identified as a requirement for the next technology nodes. One possible option is to increase transistor channel mobility through local strain engineering via external Stressors, an approach that can be used on bulk silicon as well as standard SOI substrates. Other solutions are based on substrate engineering. The attractiveness of these solutions is largely due to their compatibility with standard CMOS integration processes and architectures and presents the advantage of being independent of transistor geometry. The two approaches can be combined to maximize transistor mobility and on-current. Among the different substrate level approaches, we will focus on three main families: (1) the effect of crystal orientation, (2) strained Si and/or SiGe layers On Insulator, and (3) monocrystalline Ge-On-Insulator substrates. [ABSTRACT FROM AUTHOR]

Published
2007
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