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The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus far been limited to bulk single crystals, drastically limiting the scope of available experiments. This has made it impossible to investigate the potential topological nature of the superconductivity in this material. Experiments to access details about the superconducting state require sophisticated lithographic structures, typically based on thin films. Here we report on the establishment of high crystalline quality epitaxial thin films of YPtBi(111), grown using molecular beam epitaxy on Al2O3(0001) substrates. A robust superconducting state is observed, with both critical temperature and critical field consistent with that previously reported for bulk crystals. Moreover we find that AlOx capping sufficiently protects the sample surface from degradation to allow for proper lithography. Our results pave a path towards the development of advanced lithographic structures, that will allow the exploration of the potentially topological nature of superconductivity in YPtBi., Comment: 5 pages, 4 figures

Magneto-transport measurements on gated high mobility heterostructures containing a 60 nm layer of tensile strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the p-type regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k.p calculations that the p-type transport results from massive Volkov-Pankratov states. Their formation prevents the Dirac point and thus the p-conducting topological surface state from being accessible in transport experiments. This interpretation is supported by low-field magneto-transport experiments demonstrating the coexistence of n-conducting topological surface states and p-conducting Volkov-Pankratov states at the relevant gate voltages., 15+5 pages, 5 figures; initially submitted version

We present a novel low-temperature (30

The study of the laws of nature has traditionally been pursued in the limit of isolated systems, where energy is conserved. This is not always a valid approximation, however, as the inclusion of features such as gain and loss, or periodic driving, qualitatively amends these laws. A contemporary frontier of metamaterial research is the challenge open systems pose to the characterization of topological matter1,2. Here, one of the most relied upon principles is the bulk–boundary correspondence (BBC), which intimately relates the surface states to the topological classification of the bulk3,4. The presence of gain and loss, in combination with the violation of reciprocity, has been predicted to affect this principle dramatically5,6. Here, we report the experimental observation of BBC violation in a non-reciprocal topolectric circuit7, which is also referred to as the non-Hermitian skin effect. The circuit admittance spectrum exhibits an unprecedented sensitivity to the presence of a boundary, displaying an extensive admittance mode localization despite a translationally invariant bulk. Intriguingly, we measure a non-local voltage response due to broken BBC. Depending on the a.c. current feed frequency, the voltage signal accumulates at the left or right boundary, and increases as a function of nodal distance to the current feed. Boundary-localized bulk eigenstates given by the non-Hermitian skin effect are observed in a non-reciprocal topological circuit. A fundamental revision of the bulk–boundary correspondence in an open system is required to understand the underlying physics.

We observe a localized cnoidal (LCn) state in an electric circuit network. Its formation derives from the interplay of non-linearity and the topology inherent to a Su-Schrieffer-Heeger (SSH) chain of inductors. Varicap diodes act as voltage-dependent capacitors, and create a non-linear on-site potential. For a sinusoidal voltage excitation around midgap frequency, we show that the voltage response in the non-linear SSH circuit follows the Korteweg-de Vries equation. The topological SSH boundary state which relates to a midgap impedance peak in the linearized limit is distorted into the LCn state in the non-linear regime, where the cnoidal eccentricity decreases from edge to bulk.

HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow binding energy. We present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron spectroscopy and density functional theory. The results establish detailed agreement in terms of (i) electronic band dispersions and orbital symmetries, (ii) surface and bulk contributions to the electronic structure, and (iii) the importance of Hg 5d states in the valence-band formation. Supported by theory, our experiments directly image the paradigmatic band inversion in HgTe, underlying its non-trivial band topology.

We utilize a diffusion-controlled wet chemical etching technique to fabricate microstructures from two-dimensional HgTe/(Hg,Cd)Te-based topological insulators. For this purpose, we employ a KI: I2: HBr: H2O-based etchant. Investigation of the side profile of the etched heterostructure reveals that HgTe quantum wells protrude from the layer stack as a result of the different etch rates of the layers. This constraint poses challenges for the study of the transport properties of edge channels in HgTe quantum wells. In order to achieve a smoother side profile, we develop a novel approach to the etching process involving the incorporation of a sacrificial design element in the etch mask. This limits the flow of charge carriers to the ions in the electrolyte during the etching process. The simplicity of the method coupled with the promising results achieved thereby should make it possible for the new approach introduced here to be applied to other semiconductor heterostructures.

The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transport gap in disordered two dimensional topological insulators in perpendicular magnetic fields of up to 16 T. Instead, we observe that a topological edge channel (from band inversion) coexists with a counterpropagating quantum Hall edge channel for magnetic fields at which the transition to the insulating regime is expected. For larger fields, we observe only the quantum Hall edge channel with transverse resistance close to $h/e^2$. By tuning the disorder using different fabrication processes, we find evidence that this unexpected $\nu=1$ plateau originates from extended quantum Hall edge channels along a continuous network of charge puddles at the edges of the device., Comment: 8+3 pages, 5+2 figures

Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surrounding the effect, and is the focus of this article. Here we show, through a careful analysis of the non-local voltages on a multi-terminal Corbino geometry, that the chiral edge channels continue to exist without applied magnetic field up to the Curie temperature of bulk ferromagnetism of the magnetic topological insulator, and that thermally activated bulk conductance is responsible for this quantization breakdown. Our results offer important insights on the nature of the topological protection of these edge channels, provide an encouraging sign for potential applications, and establish the multi-terminal Corbino geometry as a powerful tool for the study of edge channel transport in topological materials., The quantum anomalous Hall effect has so far been limited to temperature of the order of 20 mK. Here, Fijalkowski et al. report the existence of chiral edge channels up to the Curie temperature of bulk ferromagnetism of the magnetic topological insulator with a multi-terminal Corbino geometry.

In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T. We show that in quantum wells with inverted band structure a monotonically decreasing magnetoresistance is observed when a magnetic field up to the order of 10 T is applied parallel to the quantum well plane. This feature is accompanied by a vanishing of nonlocality and is consistent with a predicted modification of the energy spectrum that becomes gapless at a critical in-plane field ${B}_{c}$. Magnetic fields in excess of ${B}_{c}$ allow us to investigate the evolution of the magnetoresistance in this field-induced semimetallic region beyond the known regime. After the longitudinal resistance reaches a minimum in the presumably gapless phase, we observe a strong upturn of the longitudinal resistance. A small residual Hall signal picked up in nonlocal measurements suggests that this feature is likely a bulk phenomenon and is caused by the semimetallicity of the sample. Theoretical calculations indeed support that the origin of these features is classical and a power law upturn of the resistance can be expected due to the specifics of two-carrier transport in thin (semi)metallic samples subjected to large magnetic fields.

We have experimentally investigated the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We have found that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a nonmonotonic differential resistance of narrow channels. We have shown that the observed initial increase in resistance can be attributed to electron-hole scattering, while the decrease follows naturally from the change in Fermi energy of the charge carriers. Both effects are governed dominantly by a van Hove singularity in the bulk valence band. The results demonstrate the importance of interband electron-hole scattering in the transport properties of topological insulators.

In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial volume to host the axion term. We conduct a detailed magneto-transport analysis of Chern insulators comprised of a single magnetic topological insulator layer of varying thickness as well as trilayer structures, for samples optimized to yield a perfectly quantized anomalous Hall effect. Our analysis gives evidence for a topological magneto-electric effect quantized in units of e$^2$/2h, allowing us to identify signatures of axion electrodynamics. Our observations may provide direct experimental access to electrodynamic properties of the universe beyond the traditional Maxwell equations, and challenge the hitherto proclaimed exclusive link between the observation of a zero Hall plateau and an axion insulator.

We investigate the coupled spin and orbital textures of the topological surface state in ${\mathrm{Bi}}_{2}$(Te,${\mathrm{Se})}_{3}$(0001) across full momentum space using spin- and angle-resolved photoelectron spectroscopy and relativistic one-step photoemission theory. For an approximately isotropic Fermi surface in ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{2}\mathrm{Se}$, the measured intensity and spin momentum distributions, obtained with linearly polarized light, qualitatively reflect the orbital composition and the orbital-projected in-plane spin polarization, respectively. In ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$, the in-plane lattice potential induces a hexagonal anisotropy of the Fermi surface, which manifests in an out-of-plane photoelectron spin polarization with a strong dependence on light polarization, excitation energy, and crystallographic direction.

Magnetic oscillations of Dirac surface states of topological insulators are expected to be associated with the formation of Landau levels or the Aharonov-Bohm effect. We instead study the conductance of Dirac surface states subjected to an in-plane magnetic field in presence of a barrier potential. Strikingly, we find that, in the case of large barrier potentials, the surface states exhibit pronounced oscillations in the conductance when varying the magnetic field, in the \textit{absence} of Landau levels or the Aharonov-Bohm effect. These novel magnetic oscillations are attributed to the emergence of \textit{super-resonant regimes} by tuning the magnetic field, in which almost all propagating electrons cross the barrier with perfect transmission. In the case of small and moderate barrier potentials, we also identify a positive magnetoconductance which is due to the increase of the Fermi surface by tilting the surface Dirac cone. Moreover, we show that for weak magnetic fields, the conductance displays a shifted sinusoidal dependence on the field direction with period $\pi$ and phase shift determined by the tilting direction with respect to the field direction. Our predictions can be applied to many topological insulators, such as HgTe and Bi$_{2}$Se$_{3}$, and provide important insights into exploring and understanding exotic magnetotransport properties of topological surface states., Comment: 5+2 pages, 4 figures

A Correction to this paper has been published: https://doi.org/10.1038/s41535-021-00314-9

Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry in the bulk of this half-heusler crystal. Besides the angular dependence on magnetization, the competition of Rashba and Dresselhaus-like spin-orbit couplings results in the dependence of these effects on the crystal direction of the applied electric field. The phenomenology that we observe highlights potential inapplicability of commonly considered approaches for interpreting experiments. We point out that, in general, there is no direct link between the current-induced non-equilibrium spin polarization inferred from the measured spin-orbit torque and the unidirectional magnetiresistance. We also emphasize that the unidirectional magnetoresistance has not only longitudinal but also transverse components in the electric field -- current indices which complicates its separation from the thermoelectric contributions to the detected signals in common experimental techniques. We use the theoretical results to analyze our measurements of the on-resonance and off-resonance mixing signals in microbar devices fabricated from an epitaxial NiMnSb film along different crystal directions. Based on the analysis we extract an experimental estimate of the unidirectional magnetoresistance in NiMnSb., Comment: 29 pages, 13 figures

We report the growth of CuMnSb thin films by molecular beam epitaxy on InAs (001) substrates. The CuMnSb layers are compressively strained (0.6 %) due to lattice mismatch. The thin films have a $\ensuremath{\omega}$ full width at half-maximum of 7.7 arcsec according to high resolution x-ray diffraction, and a root-mean-square roughness of 0.14 nm as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a N\'eel temperature of 62 K, a Curie-Weiss temperature of \ensuremath{-}65 K, and an effective moment of $5.9\phantom{\rule{0.16em}{0ex}}{\ensuremath{\mu}}_{B}/\mathrm{f}.\mathrm{u}.$ Transport measurements confirm the antiferromagnetic transition and show a residual resistivity at 4 K of $35\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}$\textohm{} cm.

Nitrogen-vacancy ($\mathrm{N}$-$V$) centers in diamond are among the best-studied quantum-based sensors for a wide range of applications. Here, we demonstrate an optical polarization-based method for full vector magnetometry using ensembles of $\mathrm{N}$-$V$ centers. The anisotropy of the electric dipole moments of the $\mathrm{N}$-$V$ centers enables the assignment of the different magnetic field split transitions in the optically detected magnetic resonance spectra by appropriately setting the optical polarization in the excitation and/or detection of the $\mathrm{N}$-$V$ photoluminescence signal. By further employing the optical-selection rules for the driving microwave field, we show how the full vector of the investigated magnetic field can be restored without the need to apply external bias fields. We discuss different $\mathrm{N}$-$V$-center orientation implementations and limitations toward common approximations used in the $\mathrm{N}$-$V$ magnetometry literature for our approach.

Selective area growth is employed in the vapor-liquid-solid molecular beam epitaxy of ZnTe nanowire arrays. Full control over the location of the individual nanowires is achieved by defined positioning of the growth catalyst. This study addresses the influence of substrate material and growth temperature on the yield of vertical nanowires. The optimized procedure provides arrays of single-crystalline free-standing nanowires with a high ensemble uniformity. The nanowires exhibit a uniform shape with a diameter of about 80 nm and reach a length of more than 3μm, which makes them suitable as substrates for core-shell nanowires of the topological insulator material HgTe. ©2020 American Physical Society

Optically induced spin transfer (OISTR) is a pathway to control magnetization dynamics in complex materials on femto- to attosecond timescales. The direct interaction of the laser field with the material creates transient nonequilibrium states, which can exhibit an efficient spin transfer between different magnetic subsystems. How far this spin manipulation via OISTR is a general phenomenon or restricted to a subset of materials with specific properties is an open experimental and theoretical question. Using time-resolved magneto-optical Kerr measurements and time-dependent density functional theory we investigate OISTR in Heusler compounds. We show that the half-Heusler materials NiMnSb and CoMnSb exhibit strong signatures of OISTR, whereas this is less pronounced in the full-Heusler compounds Co2MnSi, Co2FeSi, and Co2FeAl in agreement with ab initio calculations. Our work opens up a systematic path for coherent manipulation of spin dynamics by direct light-matter interaction.

The combination of x-ray magnetic circular dichroism with multiplet ligand field theory is a powerful method to study magnetic ground state properties. Here, the authors use this approach to reveal a strongly covalent ferromagnetic ground state of V and Cr impurities embedded in Bi${}_{x}$Sb${}_{2\ensuremath{-}x}$Te${}_{3}$ topological-insulator thin films. They find a substantial charge transfer from the Te ligands to the impurities and a surprisingly negligible contribution from ionic V${}^{3+}$ and Cr${}^{3+}$. The authors also succeed in quantifying the magnetic moments and orbital occupations, which are key parameters for theories of the magnetic coupling mechanism.

Here, we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)_{2}Te_{3}. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different magnetization reversal fields, which in combination with a temperature dependent study points towards the coexistence of two ferromagnetic orders in the system. Moreover, we find that the sign of total anomalous Hall response of the system depends on the thickness and magnetic doping density of the magnetic layer. The thickness dependence suggests that the two ferromagnetic components originate from the surface and bulk of the magnetic topological insulator film. We believe that our observations provide insight into the magnetic behavior, and thus will contribute to an eventual understanding of the origin of magnetism in this material class. In addition, our data bear a striking resemblance to anomalous Hall signals often associated with skyrmion contributions. Our analysis provides a straightforward explanation for both the magnetic field dependence of the Hall signal and the observed change in sign without needing to invoke skyrmions, and thus suggest that caution is needed when making claims of effects from skyrmion phases.

Electrical currents in a quantum spin Hall insulator are confined to the boundary of the system. The charge carriers behave as massless relativistic particles whose spin and momentum are coupled to each other. Although the helical character of those states is already established by experiments, there is an open question regarding how those edge states interact with each other when they are brought into close spatial proximity. We employ an inverted HgTe quantum well to guide edge channels from opposite sides of a device into a quasi-one-dimensional constriction. Our transport measurements show that, apart from the expected quantization in integer steps of 2e2/h, we find an additional plateau at e2/h. We combine band structure calculations and repulsive electron–electron interaction effects captured within the Tomonaga–Luttinger liquid model and Rashba spin–orbit coupling to explain our observation in terms of the opening of a spin gap. These results may have direct implications for the study of one-dimensional helical electron quantum optics, and for understanding Majorana and para fermions. Little is known about how edge states in topological materials interact with each other. Here, a quantum spin Hall insulator is used to show that when edge states are brought close together, additional gaps appear in the spectrum.

The topic of two-dimensional topological insulators has blossomed after the first observation of the quantum spin Hall (QSH) effect in HgTe quantum wells. However, studies have been hindered by the relative fragility of the edge states. Their stability has been a subject of both theoretical and experimental investigation in the past decade. Here, we present a new generation of high quality (Cd,Hg)Te/HgTe-structures based on a new chemical etching method. From magnetotransport measurements on macro- and microscopic Hall bars, we extract electron mobilities μ up to about 400 × 103 cm2/(V s), and the mean free path λmfp becomes comparable to the sample dimensions. The Hall bars show quantized spin Hall conductance, which is remarkably stable up to 15 K. The clean and robust edge states allow us to fabricate high quality side-contacted Josephson junctions, which are significant in the context of topological superconductivity. Our results open up new avenues for fundamental research on QSH effect as well as po...

Multilayer growth of an immiscible material system is an example of a self-ordering process which results in nanostructures of various patterns. PbTe and CdTe produce an excellent example of an immiscible material system because, despite having nearly the same lattice constants, both components crystallize in different crystal structures - rock salt and zinc blende - respectively. In this report we adjust the kinetic Monte Carlo (kMC) model proposed in our previous publication [1] to the case of PbTe/CdTe multilayer structures formed of ultra-thin PbTe and CdTe layers. The morphology of the multilayers is revealed by transmission electron microscopy (TEM) and the morphological patterns are simulated using the kMC model, which takes into account bulk and surface diffusion. An important factor which determines the morphology of the PbTe/CdTe superlattices is a significant anisotropy of both the surface and the bulk diffusion. The simulations show that the shape, size and dimensionality of the emerging nanostructures strongly depend on the amount of deposited components and the growth rate. Since the amount of the deposited material plays an important role, the desorption process from the surface has to be considered. Our kMC model with adjusted parameters correctly reproduces all morphological details observed in real PbTe/CdTe nanostructures grown with different growth rates and composition ratios. Finally, we show that the growth rate may be used to control morphological transitions between different types of structures of given compositions.

The presence of twins, both tilting and twisting of domains and resulting strain at domain boundaries in magnetically doped topological insulators can significantly modify their band topology and carrier density, and hence their electronic properties. In this paper, we report on a detailed microstructural characterization of Cr-doped (Bi,Se)2Te3 layers grown by molecular beam epitaxy on Si(111). We provide detailed microscopical descriptions of defects present in the films (twins, mosaicity tilt, mosaicity twist), and suggest ways to control their structural quality.

Quantum spin Hall edge channels hold great promise as dissipationless one-dimensional conductors.However, the ideal quantized conductance of2e2=his only found in very short channels-in contradictionwith the expected protection against backscattering of the topological insulator state. In this Letter we showthat enhancing the band gap does not improve quantization. When we instead alter the potential landscapeby charging trap states in the gate dielectric using gate training, we approach conductance quantization formacroscopically long channels. Effectively, the scattering length increases to175μm, more than 1 order ofmagnitude longer than in previous works for HgTe-based quantum wells. Our experiments show that thedistortion of the potential landscape by impurities, leading to puddle formation in the narrow gap material,is the major obstacle for observing undisturbed quantum spin Hall edge channel transport © American Physical Society 2019. This is the authors accepted and refereed manuscript to the article. The final article is available at: [http://doi.org/10.1103/PhysRevLett.123.047701]

In this letter we report on proximity superconductivity induced in CdTe-HgTe core-shell nanowires, a quasi-one-dimensional heterostructure of the topological insulator HgTe. We demonstrate a Josephson supercurrent in our nanowires contacted with superconducting Al leads. The observation of a sizable $I_c R_n$ product, a positive excess current and multiple Andreev reflections up to fourth order further indicate a high interface quality of the junctions., Accepted for publication in Nano Letters

A quantum anomalous Hall (QAH) insulator coupled to an s-wave superconductor is predicted to harbor a topological superconducting phase, the elementary excitations of which (i.e. Majorana fermions) can form topological qubits upon non-Abelian braiding operations. A recent transport experiment interprets the half-quantized two-terminal conductance plateau as the presence of chiral Majorana fermions in a millimeter-size QAH-Nb hybrid structure. However, there are concerns about this interpretation because non-Majorana mechanisms can also generate similar signatures, especially in a disordered QAH system. Here, we fabricated QAH-Nb hybrid structures and studied the QAH-Nb contact transparency and its effect on the corresponding two-terminal conductance. When the QAH film is tuned to the metallic regime by electric gating, we observed a sharp zero-bias enhancement in the differential conductance, up to 80% at zero magnetic field. This large enhancement suggests high probability of Andreev reflection and transparent interface between the magnetic topological insulator (TI) and Nb layers. When the magnetic TI film is in the QAH state with well-aligned magnetization, we found that the two-terminal conductance is always half-quantized. Our experiment provides a comprehensive understanding of the superconducting proximity effect observed in QAH-superconductor hybrid structures and shows that the half-quantized conductance plateau is unlikely to be induced by chiral Majorana fermions.

Recent experimental progress in condensed matter physics enables the observation of signatures of the parity anomaly in two-dimensional Dirac-like materials. Using effective field theories and analyzing band structures in external out-of-plane magnetic fields (orbital fields), we show that topological properties of quantum anomalous Hall (QAH) insulators are related to the parity anomaly. We demonstrate that the QAH phase survives in orbital fields, violates the Onsager relation, and can be therefore distinguished from a quantum Hall (QH) phase. As a fingerprint of the QAH phase in increasing orbital fields, we predict a transition from a quantized Hall plateau with $\sigma_\mathrm{xy}= -\mathrm{e}^2/\mathrm{h}$ to a not perfectly quantized plateau, caused by scattering processes between counterpropagating QH and QAH edge states. This transition can be especially important in paramagnetic QAH insulators, such as (Hg,Mn)Te/CdTe quantum wells, in which exchange interaction and orbital fields compete., Comment: 15 pages and 10 figures A few minor typos have been corrected, e.g., units in Eq. (4) have been corrected

We present an alternative fabrication process for single crystal diamond cantilevers that consist of a platform carrying a nanopillar containing nitrogen vacancy centers close to its surface. These cantilevers are suitable for vector magnetometry by fitting them to the scanning unit of an atomic force microscope. Our methods extend existing technology to lower electron voltages (30kV) and standard reactive ion etching. Special procedures are presented to overcome both restrictions due to charging of the diamond during electron beam lithography and limitations of the etch depth due to the low plasma density in reactive ion etching systems. The presence of nitrogen vacancy centers in the fabricated nanostructures is confirmed by photoluminescence measurements. Display Omitted Existing technology for the fabrication of single crystal diamond cantilevers for magnetometry experiments is extended30kV electron beam lithography and standard reactive ion etching processes can be usedA precise alignment method using two sets of marks is used for alignment on the backside of the sampleA thin Ti layer underneath the resist promotes good adhesion for nanostructures and prevents charging during lithography

The half-metal ferromagnet NiMnSb, with its high spin polarization, low magnetic damping and tunable magnetic anisotropy, is a promising material for applications in spin torque devices. We develop the epitaxial growth of NiMnSb/ZnTe/NiMnSb heterostructures, aiming towards the realization of an all-NiMnSb based magnetic tunneling junction (MTJ). Layers are grown in situ by Molecular Beam Epitaxy (MBE) and Atomic Layer Epitaxy (ALE) methods. By tuning Mn content, the magnetic anisotropy of each of the two NiMnSb layers is adjusted in order to achieve mutually orthogonal uniaxial anisotropies. SQUID measurements of the magnetization along orthogonal crystal directions [110] and [ 1 1 ¯ 0 ] confirm that the two layers have mutually orthogonal anisotropy. High Resolution X-Ray Diffraction measurements and simulations confirm the nominal layer stack and demonstrate the high crystalline quality of the individual layers. Such layer stacks provide a potential basis for TMR-based spin-torque devices such as spin-torque oscillators.

The Josephson effect describes the generic appearance of a supercurrent in a weak link between two superconductors. Its exact physical nature however deeply influences the properties of the supercurrent. Detailed studies of Josephson junctions can reveal microscopic properties of the superconducting pairing (spin-triplet correlations, $d$-wave symmetry) or of the electronic transport (quantum dot, ballistic channels). In recent years, considerable efforts have focused on the coupling of superconductors to topological insulators, in which transport is mediated by topologically protected Dirac surface states with helical spin polarization (while the bulk remains insulating). Here, the proximity of a superconductor is predicted to give rise to unconventional induced $p$-wave superconductivity, with a doublet of topologically protected gapless Andreev bound states, whose energies varies $4\pi$-periodically with the superconducting phase difference across the junction. In this article, we report the observation of an anomalous response to rf irradiation in a Josephson junction with a weak link of the 3D topological insulator HgTe. The response is understood as due to a $4\pi$-periodic contribution to the supercurrent, and its amplitude is compatible with the expected contribution of a gapless Andreev doublet., Comment: revised version, main text : 15 pages, 4 figures, supplementary information : 34 pages, 17 figures