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Copy number for AR-V7 and ARv567es stratified by PSA response AR, androgen receptor; IQ, interquartile; PSA50, 50% reduction from baseline in prostate-specific antigen; SD, standard deviation.

Assay sensitivity in 22RV1 prostate cancer cells spiked-in healthy donor blood run through the GEDI device. AR-FL (blue) and AR-V7 (red) mRNA expression (#copies per sample) was determined by ddPCR in varying amounts of 22RV1 cells in the presence of healthy donor blood run through the GEDI device. The assay, reliably and reproducibly detects both transcripts in single spiked-in cells. The table below the graph shows the raw data (copy number) for each transcript per condition. Healthy donor blood PBMCs alone were used as a control. AR, androgen receptor; ddPCR, droplet digital polymerase chain reaction; FL, full length; GEDI, geometrically enhanced differential immunocapture; PBMC, peripheral blood mononuclear cell.

Copy number for AR-FL, AR-V7 and ARv567es for the evaluable population at baseline AR, androgen receptor; FL, full length.

ddPCR primer and probe sequences AR, androgen receptor; FL, full length.

The magnetic properties of permalloy-based trilayers of the form Py0.8Cu0.2/Py0.4Cu0.6/Py/IrMn were studied as the spacer layer undergoes a paramagnetic to ferromagnetic phase transition. We find the coupling between the free Py0.8Cu0.2 layer and the exchange bias pinned Py to be strongly temperature-dependent: there is negligible coupling above the Curie temperature of the Py0.4Cu0.6 spacer layer, strong ferromagnetic coupling below that temperature, with a tunable coupling between these extremes. Polarized neutron reflectometry was used to measure the depth profile of the magnetic order in the system, allowing us to correlate the order parameter with the coupling strength. The thickness dependence shows that these are interface effects with an inverse relationship to thickness, and that there is a magnetic proximity effect that enhances the Curie temperature of the spacer layer with characteristic length scale of about 5 nm. As a demonstration of potential functionality of such a system, the structure is shown to spontaneously flip from the antiparallel to parallel magnetic configuration once the spacer layer has developed long-range magnetic order.

Thrombosis is a major complication that can occur in both blood-contacting devices and regions and in regions of vascular damage. Microfluidic devices are popular templates to model various thrombogenic settings and to assess conditions that lead to bulk channel occlusion. However, area-averaged measurements miss the opportunity to extract real-time information on thrombus evolution and early dynamics of thrombus formation and propagation, which result in late-stage bulk channel occlusion. To clarify these dynamics, we have developed a standalone tracking algorithm that uses consecutive image connectivity and minimal centroid distance mappings to uniquely index all appearing thrombi in fluorescence time-lapse videos http://links.lww.com/ASAIO/A887, and http://links.lww.com/ASAIO/A888. This leads to measurements of all individual aggregates that can in turn be studied as ensembles. We applied tracking to fluorescence time-lapse videos http://links.lww.com/ASAIO/A887, and http://links.lww.com/ASAIO/A888 of thrombosis across both collagen-functionalized substrate and across the surface of a roughened titanium alloy (Ti6Al4V) at a shear rate of 4000 s-1. When comparing ensemble-averaged measurements to area-averaged metrics, we unveil immediate, steady thrombus growth at early phases on collagen surfaces and unstable thrombus attachment to roughened Ti6Al4V surfaces on Ti6Al4V surfaces. Additionally, we introduce tracked thrombus eccentricity and fluorescence intensity as additional volumetric measures of thrombus growth that relate back to the primary thrombosis mechanism at play. This work advocates for the complementation of surface macrostate metrics with characteristic thrombus microstate growth patterns to accurately predict critical thrombosis events.

Electrically induced ionic motion offers a new way to realize voltage-controlled magnetism, opening the door to a new generation of logic, sensor, and data storage technologies. Here, we demonstrate an effective approach to magneto-ionically and electrically tune exchange bias in Gd/Ni$_{1-x}$Co$_{x}$O thin films (x=0.50, 0.67), where neither of the layers alone is ferromagnetic at room temperature. The Gd capping layer deposited onto antiferromagnetic Ni$_{1-x}$Co$_{x}$O initiates a solid-state redox reaction that reduces an interfacial region of the oxide to ferromagnetic NiCo. Exchange bias is established after field cooling, which can be enhanced by up to 35% after a voltage conditioning and subsequently reset with a second field cooling. These effects are caused by the presence of an interfacial ferromagnetic NiCo layer, which further alloys with the Gd layer upon field cooling and voltage application, as confirmed by electron microscopy and polarized neutron reflectometry studies. These results highlight the viability of the solid-state magneto-ionic approach to achieve electric control of exchange bias, with potentials for energy-efficient magneto-ionic devices., 25 pages, 5 figures; 8 pages of Supporting Information with 5 figures

Introduction We evaluated 8, 12, or 24 weeks of ledipasvir/sofosbuvir in patients with hepatitis C virus and end-stage renal disease undergoing dialysis. Methods Primary efficacy end point was sustained virologic response 12 weeks after treatment. Primary safety end point was treatment discontinuation because of adverse events (AEs). Results Ninety-four percent (89/95) achieved sustained virologic response 12 weeks after treatment. Six patients died during treatment (n = 4) or before study completion (n = 2); no deaths were related to treatment. No patients discontinued treatment because of AEs. Thirteen percent had serious AEs; none were related to treatment. Discussion Treatment with ledipasvir/sofosbuvir was safe and effective in patients with end-stage renal disease undergoing dialysis.

The quest to realize new kinds of data storage devices has motivated recent studies in the field of magnetoelectric heterostructures. One of the most commonly investigated systems is Fe3O4/[Pb(Mg 1 / 3 Nb 2 / 3 ) O3]0.7–[PbTiO3]0.3 (PMN-PT), however, the interplay between different coupling mechanisms is not yet well understood. To disentangle the role of strain and polarisation influence in Fe3O4/PMN-PT, we report on magnetoelectric coupling measurements for different orientations of the applied magnetic field and for two different substrate cuts, PMN-PT(001) and PMN-PT(011). For Fe3O4/PMN-PT(011), having the sample aligned such that the magnetic field is parallel to the [01 1 ‾ ] easy axis leads to a remanent increase of the magnetisation for each electric field cycle. On the other hand, for the magnetic field along the [100] hard axis, the magnetisation follows a butterfly-like loop characteristic of strain coupling imparted by the substrate. For Fe3O4/PMN-PT(001), the magnetoelectric effect is a superposition of the observed behaviour of both in-plane directions in Fe3O4/PMN-PT(011). The magnetisation shows an initial remanent increase followed by a butterfly like loop. Polarised neutron reflectometry measurements on Fe3O4/PMN-PT(011) shows no difference between the behaviour at the interface and the bulk of the film and no decline of the interaction further away from the shared interface. Our results demonstrate the role of strain and polarisation on the magnetisation of the Fe3O4 layer and provide a clear step towards the design of future magnetoelectric systems.

Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr1-xCaxCoO3). Here, we show that in thin films of the complex perovskite (Pr1-yYy)1-xCaxCoO3-{\delta}, heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point., Comment: 35 pages, 7 figures

Epithelial barrier dysfunction contributes to a dysregulated intestinal immune response in ulcerative colitis (UC). GB004 is an orally administered, small molecule, gut-targeted stabiliser of hypoxia-inducible factor-1α, a transcription factor with protective roles at the epithelial layer of the inflamed gut.To evaluate safety, pharmacokinetics, pharmacodynamics and efficacy of GB004 in patients with active UC.This double-blind, placebo-controlled study randomised patients 2:1 to receive an oral solution of GB004 120 mg or placebo once daily for 28 days. Eligible patients had a Robarts Histopathology Index score ≥4 with neutrophils in the epithelium, total Mayo Clinic score 3-12, Mayo Clinic endoscopic subscore ≥1, and blood in the stool, despite treatment with 5-aminosalicylates, corticosteroids or immunosuppressants.Thirty-four patients were randomised. GB004 120 mg for 28 days was generally well-tolerated. Adverse events occurred in 27.3% (3/11) and 39.1% (9/23) of patients in the placebo and GB004 groups respectively. Nausea and dysgeusia were most commonly reported in the GB004 group (0% for placebo and 21.7% [5/23] and 13.0% [3/23] respectively for GB004). There were no treatment-related serious adverse events or deaths. GB004 exhibited minimal accumulation, with higher colonic concentrations relative to plasma. Exploratory pharmacodynamic and efficacy analyses demonstrated GB004 target engagement and numerically higher proportions of patients achieving improvement in multiple measures of disease activity, respectively, at day 28 for GB004 compared to placebo.Results from this phase 1b trial support evaluation of the full therapeutic potential of GB004 for the treatment of UC. A phase 2 study (NCT04556383) is ongoing. Clinicaltrials.gov NCT03860896.

Tumors display rich cellular heterogeneity and typically consist of multiple co-existing clones with distinct genotypic and phenotypic characteristics. The acquisition of resistance to chemotherapy has been shown to contribute to the development of aggressive cancer traits, such as increased migration, invasion and stemness. It has been hypothesized that collective cellular behavior and cooperation of cancer cell populations may directly contribute to disease progression and lack of response to treatment. Here we show that the spontaneous emergence of chemoresistance in a cancer cell population exposed to the selective pressure of a chemotherapeutic agent can result in the emergence of collective cell behavior, including cell-sorting, chemoprotection and collective migration. We derived several gemcitabine resistant subclones from the human pancreatic cancer cell line BxPC3 and determined that the observed chemoresistance was driven of a focal amplification of the chr11p15.4 genomic region, resulting in over-expression of the ribonucleotide reductase (RNR) subunit RRM1. Interestingly, these subclones display a rich cell-sorting behavior when cultured as mixed tumor spheroids. Furthermore, we show that chemoresistant cells are able to exert a chemoprotective effect on non-resistant cells in spheroid co-culture, whereas no protective effect is seen in conventional 2D culture. We also demonstrate that the co-culture of resistant and non-resistant cells leads to collective migration where resistant cells enable migration of otherwise non-migratory cells.

Following the success and relevance of the 2014 and 2017 Magnetism Roadmap articles, this 2020 Magnetism Roadmap edition takes yet another timely look at newly relevant and highly active areas in magnetism research. The overall layout of this article is unchanged, given that it has proved the most appropriate way to convey the most relevant aspects of today's magnetism research in a wide variety of sub-fields to a broad readership. A different group of experts has again been selected for this article, representing both the breadth of new research areas, and the desire to incorporate different voices and viewpoints. The latter is especially relevant for thistype of article, in which one's field of expertise has to be accommodated on two printed pages only, so that personal selection preferences are naturally rather more visible than in other types of articles. Most importantly, the very relevant advances in the field of magnetism research in recent years make the publication of yet another Magnetism Roadmap a very sensible and timely endeavour, allowing its authors and readers to take another broad-based, but concise look at the most significant developments in magnetism, their precise status, their challenges, and their anticipated future developments. While many of the contributions in this 2020 Magnetism Roadmap edition have significant associations with different aspects of magnetism, the general layout can nonetheless be classified in terms of three main themes: (i) phenomena, (ii) materials and characterization, and (iii) applications and devices. While these categories are unsurprisingly rather similar to the 2017 Roadmap, the order is different, in that the 2020 Roadmap considers phenomena first, even if their occurrences are naturally very difficult to separate from the materials exhibiting such phenomena. Nonetheless, the specifically selected topics seemed to be best displayed in the order presented here, in particular, because many of the phenomena or geometries discussed in (i) can be found or designed into a large variety of materials, so that the progression of the article embarks from more general concepts to more specific classes of materials in the selected order. Given that applications and devices are based on both phenomena and materials, it seemed most appropriate to close the article with the application and devices section (iii) once again. The 2020 Magnetism Roadmap article contains 14 sections, all of which were written by individual authors and experts, specifically addressing a subject in terms of its status, advances, challenges and perspectives in just two pages. Evidently, this two-page format limits the depth to which each subject can be described. Nonetheless, the most relevant and key aspects of each field are touched upon, which enables the Roadmap as whole to give its readership an initial overview of and outlook into a wide variety of topics and fields in a fairly condensed format. Correspondingly, the Roadmap pursues the goal of giving each reader a brief reference frame of relevant and current topics in modern applied magnetism research, even if not all sub-fields can be represented here. The first block of this 2020 Magnetism Roadmap, which is focussed on (i) phenomena, contains five contributions, which address the areas of interfacial Dzyaloshinskii–Moriya interactions, and two-dimensional and curvilinear magnetism, as well as spin-orbit torque phenomena and all optical magnetization reversal. All of these contributions describe cutting edge aspects of rather fundamental physical processes and properties, associated with new and improved magnetic materials' properties, together with potential developments in terms of future devices and technology. As such, they form part of a widening magnetism 'phenomena reservoir' for utilization in applied magnetism and related device technology. The final block (iii) of this article focuses on such applications and device-related fields in four contributions relating to currently active areas of research, which are of course utilizing magnetic phenomena to enable specific functions. These contributions highlight the role of magnetism or spintronics in the field of neuromorphic and reservoir computing, terahertz technology, and domain wall-based logic. One aspect common to all of these application-related contributions is that they are not yet being utilized in commercially available technology; it is currently still an open question, whether or not such technological applications will be magnetism-based at all in the future, or if other types of materials and phenomena will yet outperform magnetism. This last point is actually a very good indication of the vibrancy of applied magnetism research today, given that it demonstrates that magnetism research is able to venture into novel application fields, based upon its portfolio of phenomena, effects and materials. This materials portfolio in particular defines the central block (ii) of this article, with its five contributions interconnecting phenomena with devices, for which materials and the characterization of their properties is the decisive discriminator between purely academically interesting aspects and the true viability of real-life devices, because only available materials and their associated fabrication and characterization methods permit reliable technological implementation. These five contributions specifically address magnetic films and multiferroic heterostructures for the purpose of spin electronic utilization, multi-scale materials modelling, and magnetic materials design based upon machine-learning, as well as materials characterization via polarized neutron measurements. As such, these contributions illustrate the balanced relevance of research into experimental and modelling magnetic materials, as well the importance of sophisticated characterization methods that allow for an ever-more refined understanding of materials. As a combined and integrated article, this 2020 Magnetism Roadmap is intended to be a reference point for current, novel and emerging research directions in modern magnetism, just as its 2014 and 2017 predecessors have been in previous years., Journal of Physics D: Applied Physics, 53 (45), ISSN:0022-3727, ISSN:1361-6463

Summary Background Hepatitis C virus (HCV) infection is increasing among pregnant women because of the opioid epidemic, yet there are no interventions to reduce perinatal HCV transmission or to treat HCV during pregnancy. Physiological changes in pregnancy alter the pharmacokinetics of some medications; thus, our aim was to compare the pharmacokinetic parameters of ledipasvir 90 mg plus sofosbuvir 400 mg during pregnancy with non-pregnant women. Methods This was an open-label, phase 1 study of pregnant women with genotype 1 HCV infection and their infants. A reference group of women who had participated in pharmacokinetic studies of ledipasvir–sofosbuvir during phase 2 and 3 trials was used. Participants were enrolled at Magee-Womens Hospital (Pittsburgh, PA, USA) between 23 and 24 weeks' gestation and had a 12-week course of oral ledipasvir–sofosbuvir (daily 90 mg ledipasvir plus 400 mg sofosbuvir). Three 12-h intensive pharmacokinetic visits were done at 25–26, 29–30, and 33–34 weeks' gestation and individual pharmacokinetics were summarised by geometric mean across the three visits. The primary outcome, analysed in all participants without suspected dosing errors, was the ledipasvir–sofosbuvir area under the concentration–time curve of the dosing interval (AUCtau) during pregnancy compared with the reference group by geometric mean ratio. This study is registered with ClinicalTrials.gov , NCT02683005 . Findings From Oct 1, 2016, to Sept 30, 2018, 29 pregnant women were screened and nine (31%) were enrolled. Eight (89%) women were included in the primary analysis. Ledipasvir and sofosbuvir exposures were similar in the pregnant women versus the non-pregnant reference group (geometric mean ratio of AUCtau ledipasvir 89·3% [90% CI 68·7–116·1]; sofosbuvir 91·1% [78·0–106·3]). Interpretation Ledipasvir–sofosbuvir was safe and effective without clinically meaningful differences in drug exposure among pregnant versus non-pregnant women. Funding National Institutes of Health/Eunice Kennedy Shriver National Institute of Child Health and Human Development, the National Institutes of Health/Office of Research on Women's Health, and Gilead Sciences.

Controlling changes in magnetic anisotropy across epitaxial film interfaces is an important prerequisite for many spintronic devices. For the canonical dilute magnetic semiconductor GaMnAs, magnetic anisotropy is highly tunable through strain and doping, making it a fascinating model system for exploration of anisotropy control in a carrier-mediated ferromagnet. Here, we have used transmission electron microscopy and polarized neutron reflectometry to characterize the interface between GaMnAs-based layers designed to have anisotropy vectors oriented at right angles from one another. For a bilayer of ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}{\mathrm{As}}_{1\ensuremath{-}y}{\mathrm{P}}_{y}$ and ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$, we find that the entirety of the ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ layer exhibits in-plane magnetic anisotropy and that the $majority$ of the ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}{\mathrm{As}}_{1\ensuremath{-}y}{\mathrm{P}}_{y}$ exhibits perpendicular anisotropy. However, near the ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ interface, we observe a thin Mn-rich region of the nominally perpendicular ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}{\mathrm{As}}_{1\ensuremath{-}y}{\mathrm{P}}_{y}$ that instead exhibits $in\ensuremath{-}plane$ anisotropy. Using first-principles energy considerations, we explain this sublayer as a natural consequence of interfacial carrier migration.

We report on the evolution of the average and depth-dependent magnetic order in thin-film samples of biaxially stressed and electron-doped EuTiO3 for samples across a doping range < 0.1 to 7.8 × 1020 cm-3. Under an applied in-plane magnetic field, the G-type antiferromagnetic ground state undergoes a continuous spin-flop phase transition into in-plane, field-polarized ferromagnetism. The critical field for ferromagnetism slightly decreases with an increasing number of free carriers, yet the field evolution of the spin-flop transition is qualitatively similar across the doping range. Unexpectedly, we observe interfacial ferromagnetism with saturated Eu2+ moments at the substrate interface at low fields preceding ferromagnetic saturation throughout the bulk of the degenerate semiconductor film. We discuss the implications of these findings for the unusual magnetotransport properties of this compound.

Engineering magnetic anisotropy in two-dimensional systems has enormous scientific and technological implications. The uniaxial anisotropy universally exhibited by two-dimensional magnets has only two stable spin directions, demanding 180 degrees spin switching between states. We demonstrate a novel eightfold anisotropy in magnetic SrRuO3 monolayers by inducing a spin reorientation in (SrRuO3)1/(SrTiO3)N superlattices, in which the magnetic easy axis of Ru spins is transformed from uniaxial direction (N = 1 and 2) to eightfold directions (N = 3, 4 and 5). This eightfold anisotropy enables 71 and 109 degrees spin switching in SrRuO3 monolayers, analogous to 71 and 109 degrees polarization switching in ferroelectric BiFeO3. First-principle calculations reveal that increasing the SrTiO3 layer thickness induces an emergent correlation-driven orbital ordering, tuning spin-orbit interactions and reorienting the SrRuO3 monolayer easy axis. Our work demonstrates that correlation effects can be exploited to substantially change spin-orbit interactions, stabilizing unprecedented properties in two-dimensional magnets and opening rich opportunities for low-power, multi-state device applications., 15+13 pages, 5+10 figures, including supplementary materials

Tensile-strained $\mathrm{LaCo}{\mathrm{O}}_{3\ensuremath{-}\ensuremath{\delta}}$ thin films are ferromagnetic, in sharp contrast to the zero-spin bulk, although no clear consensus has emerged as to the origin of this phenomenon. While magnetism has been heavily studied, relatively little attention has been paid to electronic transport, due to the insulating nature of the strain-stabilized ferromagnetic state. Here, structure, magnetism, and transport are studied in epitaxial $\mathrm{LaCo}{\mathrm{O}}_{3\ensuremath{-}\ensuremath{\delta}}$ films (10--22-nm thick) on various substrates (from 1.4% compressive to 2.5% tensile strain), using synchrotron x-ray diffraction, scanning probe and transmission electron microscopy, magnetometry, polarized neutron reflectometry, resistivity, and Hall effect. High quality, smooth films are obtained, exhibiting superstructures associated with both oxygen vacancy ordering and periodic in-plane ferroelastic domains. Consistent with prior work, ferromagnetism with an approximately 80--85 K Curie temperature is observed under tension; polarized neutron reflectometry confirms a relatively uniform magnetization depth profile, albeit with interfacial dead layer formation. Electrical transport is found to have similar semiconducting nature to bulk, but with reduced resistivity and activation energy. Hall effect measurements, however, reveal a striking inversion of the majority carrier type, from $p$-type in the bulk and under compression to n-type under tension. While thus far overlooked, ferromagnetism in epitaxial $\mathrm{LaCo}{\mathrm{O}}_{3\ensuremath{-}\ensuremath{\delta}}$ films is thus directly correlated with $n$-type behavior, providing important insight into the ferromagnetic state in this system. Aided by density functional theory calculations, these results are interpreted in terms of tensile-strain-induced orbital occupation and band structure changes, including a rapid decrease in effective mass at the ${e}_{g}$-derived conduction band minimum, and corresponding increase at the valence band maximum.

Low-dimensional quantum materials that remain strongly ferromagnetic down to mono layer thickness are highly desired for spintronic applications. Although oxide materials are important candidates for next generation of spintronic, ferromagnetism decays severely when the thickness is scaled to the nano meter regime, leading to deterioration of device performance. Here we report a methodology for maintaining strong ferromagnetism in insulating LaCoO3 (LCO) layers down to the thickness of a single unit cell. We find that the magnetic and electronic states of LCO are linked intimately to the structural parameters of adjacent "breathing lattice" SrCuO2 (SCO). As the dimensionality of SCO is reduced, the lattice constant elongates over 10% along the growth direction, leading to a significant distortion of the CoO6 octahedra, and promoting a higher spin state and long-range spin ordering. For atomically thin LCO layers, we observe surprisingly large magnetic moment (0.5 uB/Co) and Curie temperature (75 K), values larger than previously reported for any mono layer oxide. Our results demonstrate a strategy for creating ultra thin ferromagnetic oxides by exploiting atomic hetero interface engineering,confinement-driven structural transformation, and spin-lattice entanglement in strongly correlated materials., 24 pages, 5 figures, 1 supporting information with 13 figures

Superconducting ($S$) thin film superlattices composed of Nb and a normal metal spacer ($N$) have been extensively utilized in Josephson junctions given their favorable surface roughness compared to Nb films of comparable thickness. In this work, we characterize the London penetration depth and Ginzburg-Landau coherence lengths of $S/N$ superlattices using polarized neutron reflectometry and electrical transport. Despite the normal metal spacer layers being only approximately 8% of the total superlattice thickness, we surprisingly find that the introduction of these thin $N$ spacers between $S$ layers leads to a dramatic increase in the measured London penetration depth compared to that of a single Nb film of comparable thickness. Using the measured values for the effective in- and out-of-plane coherence lengths, we quantify the induced anisotropy of the superlattice samples and compare to a single Nb film sample. From these results, we find that that the superlattices behave similarly to layered 2D superconductors., Comment: 9 pages, 3 figures main text and 7 pages, 5 figures supplemental materials

Solid-state ionic approaches for modifying ion distributions in getter/oxide heterostructures offer exciting potentials to control material properties. Here, we report a simple, scalable approach allowing for manipulation of the superconducting transition in optimally doped YBa

Charge storage and trapping properties of polymer dielectrics govern the charge densities of adjacent semiconductors and greatly influence the on–off switching voltage (threshold voltage, Vth) of o...

Drug transporter and cytochrome P450 expression is regulated by shared nuclear receptors and, hence, an inducer should induce both, although the magnitude may differ. The objective of this study was to establish relative induction relationships between CYP3A and drug transporters (P-glycoprotein (P-gp), organic anion transporting polypeptide (OATP), and breast cancer resistance protein (BCRP)) or other P450s (CYP2C9 and CYP1A2) using ascending doses of the prototypical pregnane xenobiotic receptor (PXR) agonist, rifampin, to elicit weak, moderate, and strong PXR agonism. Healthy subjects received dabigatran etexilate, pravastatin, rosuvastatin, and a midazolam/tolbutamide/caffeine cocktail before and after rifampin 2, 10, 75, or 600 mg q.d. Unlike CYP3A, only moderate induction of P-gp, OATP, and CYP2C9 was observed and dose-dependent induction of P-gp, OATP, and CYP2C9 was always one drug-drug interaction category lower than observed for CYP3A, even when correcting for probe drug sensitivity. Data from this study establish proof-of-concept that P450 induction data can be leveraged to inform on the effect on transporters.

Solid state ionic approaches for modifying ion distributions in getter/oxide heterostructures offer exciting potentials to control material properties. Here we report a simple, scalable approach allowing for total control of the superconducting transition in optimally doped YBa$_{2}$Cu$_{3}$O$_{7-{\delta}}$ (YBCO) films via a chemically-driven ionic migration mechanism. Using a thin Gd capping layer of up to 20 nm deposited onto 100 nm thick epitaxial YBCO films, oxygen is found to leach from deep within the YBCO. Progressive reduction of the superconducting transition is observed, with complete suppression possible for a sufficiently thick Gd layer. These effects arise from the combined impact of redox-driven electron doping and modification of the YBCO microstructure due to oxygen migration and depletion. This work demonstrates an effective ionic control of superconductivity in oxides, an interface induced effect that goes well into the quasi-bulk regime, opening up possibilities for electric field manipulation., Comment: 26 pages, 5 figures

We report on the emergent magnetic state of (111)-oriented CoCr2O4 ultrathin films sandwiched between Al2O3 spacer layers in a quantum confined geometry. At the two-dimensional crossover, polarized neutron reflectometry reveals an anomalous enhancement of the total magnetization compared to the bulk value. Synchrotron X-ray magnetic circular dichroism measurements demonstrate the appearance of a long-range ferromagnetic ordering of spins on both Co and Cr sublattices. Brillouin function analyses and ab-initio density functional theory calculations further corroborate that the observed phenomena are due to the strongly altered magnetic frustration invoked by quantum confinement effects, manifested by the onset of a Yafet–Kittel-type ordering as the magnetic ground state in the ultrathin limit, which is unattainable in the bulk.

[Background & Aims] Although off-label use of sofosbuvir-containing regimens occurs regularly in patients with hepatitis C virus (HCV) infection undergoing dialysis for severe renal impairment or end-stage renal disease (ESRD), these regimens are not licensed for this indication, and there is an absence of dosing recommendations in this population. This study evaluated the safety and efficacy of sofosbuvir/velpatasvir in patients with HCV infection with ESRD undergoing dialysis., [Methods] In this phase II, single-arm study, 59 patients with genotype 1–6 HCV infection with ESRD undergoing hemodialysis or peritoneal dialysis received open-label sofosbuvir/velpatasvir (400 mg/100 mg) once daily for 12 weeks. Patients were HCV treatment naive or treatment experienced without cirrhosis or with compensated cirrhosis. Patients previously treated with any HCV NS5A inhibitor were not eligible. The primary efficacy endpoint was the proportion of patients achieving sustained virologic response (SVR) 12 weeks after discontinuation of treatment (SVR12). The primary safety endpoint was the proportion of patients who discontinued study drug due to adverse events., [Results] Overall, 56 of 59 patients achieved SVR12 (95%; 95% CI 86–99%). Of the 3 patients who did not achieve SVR12, 2 patients had virologic relapse determined at post-treatment Week 4 (including 1 who prematurely discontinued study treatment), and 1 patient died from suicide after achieving SVR through post-treatment Week 4. The most common adverse events were headache (17%), fatigue (14%), nausea (14%), and vomiting (14%). Serious adverse events were reported for 11 patients (19%), and all were deemed to be unrelated to sofosbuvir/velpatasvir., [Conclusions] Treatment with sofosbuvir/velpatasvir for 12 weeks was safe and effective in patients with ESRD undergoing dialysis., [Lay summary] Sofosbuvir/velpatasvir is a combination direct-acting antiviral that is approved for treatment of patients with hepatitis C virus (HCV) infection. Despite the lack of dosing recommendations, sofosbuvir-containing regimens (including sofosbuvir/velpatasvir) are frequently used for HCV-infected patients undergoing dialysis. This study evaluated the safety and efficacy of sofosbuvir/velpatasvir for 12 weeks in patients with HCV infection who were undergoing dialysis. Treatment with sofosbuvir/velpatasvir was safe and well tolerated, resulting in a cure rate of 95% in patients with HCV infection and end-stage renal disease., Clinical Trial Number: NCT03036852.

We use temperature-dependent Hall measurements to identify contributions of spin Hall, magnetic proximity, and sublattice effects to the anomalous Hall signal in heavy metal/ferrimagnetic insulator heterostructures with perpendicular magnetic anisotropy. This approach enables detection of both the magnetic proximity effect onset temperature and the magnetization compensation temperature and provides essential information regarding the interfacial exchange coupling. Onset of a magnetic proximity effect yields a local extremum in the temperature-dependent anomalous Hall signal, which occurs at higher temperature as magnetic insulator thickness increases. This magnetic proximity effect onset occurs at much higher temperature in Pt than W. The magnetization compensation point is identified by a sharp anomalous Hall sign change and divergent coercive field. We directly probe the magnetic proximity effect using x-ray magnetic circular dichroism and polarized neutron reflectometry, which reveal an antiferromagnetic coupling between W and the magnetic insulator. Finally, we summarize the exchange-coupling configurations and the anomalous Hall-effect sign of the magnetized heavy metal in various heavy metal/magnetic insulator heterostructures.

The coexistence and coupling of ferroelasticity and magnetic ordering in a single material offers a great opportunity to realize novel devices with multiple tuning knobs. Complex oxides are a particularly promising class of materials to find multiferroic interactions as they often possess rich phase diagrams and the interactions are very sensitive to external perturbations. Still, there are very few examples of these systems. Here we report the observation of twinning domains in ferroelastic LaCoO3 epitaxial thin films and their geometric control of structural symmetry that are intimately linked to the material electronic and magnetic states. A unidirectional structural modulation is achieved by selective choice of substrates possessing two-fold rotational symmetry. This modulation perturbs the crystal field splitting energy, leading to unexpected in plane anisotropy of orbital configuration and magnetization. These findings demonstrate the utilization of structural modulation to control multiferroic interactions and may enable a great potential for stimulation of exotic phenomena through artificial domain engineering., 24 pages, 4 figures, and one supporting information (10 figures); accepted for publication in Science Advances

Anderson localization in phonon heat conduction is observed in GaAs/AlAs superlattices with ErAs nanodots., Nondiffusive phonon thermal transport, extensively observed in nanostructures, has largely been attributed to classical size effects, ignoring the wave nature of phonons. We report localization behavior in phonon heat conduction due to multiple scattering and interference events of broadband phonons, by measuring the thermal conductivities of GaAs/AlAs superlattices with ErAs nanodots randomly distributed at the interfaces. With an increasing number of superlattice periods, the measured thermal conductivities near room temperature increased and eventually saturated, indicating a transition from ballistic to diffusive transport. In contrast, at cryogenic temperatures the thermal conductivities first increased but then decreased, signaling phonon wave localization, as supported by atomistic Greenșs function simulations. The discovery of phonon localization suggests a new path forward for engineering phonon thermal transport.

Geometric Hall effect is induced by the emergent gauge field experienced by the carriers adiabatically passing through certain real-space topological spin textures, which is a probe to non-trivial spin textures, such as magnetic skyrmions. We report experimental indications of spin-texture topological charges induced in heterostructures of a topological insulator (Bi,Sb)2Te3 coupled to an antiferromagnet MnTe. Through a seeding effect, the pinned spins at the interface leads to a tunable modification of the averaged real-space topological charge. This effect experimentally manifests as a modification of the field-dependent geometric Hall effect when the system is field-cooled along different directions. This heterostructure represents a platform for manipulating magnetic topological transitions using antiferromagnetic order., Spin-polarized carriers could show an extra Hall component when moving through certain real-space topological spin textures. Here, He et al. report an exchange bias experienced by the topological spin textures living at the interface between a topological insulator and an adjacent antiferromagnet, suggesting a chiral spin texture is induced.

Graded magnetic materials represent a promising new avenue in modern material science from both fundamental and application points of view. Over the course of the last few years, remarkable results have been obtained in (epitaxial) heterostructures based on thin alloy films featuring diverse compositional depth profiles. As a result of the precise tailoring of such profiles, the exchange coupling, and the corresponding effective or local Curie temperatures can be controlled over tens of nm with an excellent precision. This topical review article reports the most recent advances in this emerging research field. Several aspects are covered, but the primary focus lies in the study of compositional gradients being transferred into depth dependent magnetic states in ferromagnets, while also reviewing other experimental attempts to create exchange graded films and materials in general. We account for the remarkable progress achieved in each sample and composition geometry by reporting the recent developments and by discussing the research highlights obtained by several groups. Finally, we conclude the review article with an outlook on future challenges in this field.

Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with N\'eel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of the topological surface massive Dirac fermions. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics., Comment: 25 pages, 4 figures

Phenyl-C71-butyric acid methyl ester (PC71BM) could intercalate between the side-chains of poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT) creating a stable co-crystal structure, so optimal solar cell performance was obtained at high PC71BM concentrations promoting phase separated electron conductive pathways. Neutron reflectivity, with the application of magnetic contrast variation, was used to investigate the concentration profile of PC71BM within the active layer. And this profile was found to be homogeneous through the film thickness. Small angle neutron scattering was utilized to find there is amorphous PC71BM even at 50 wt% of fullerene while previously it was believed that all fullerene was consumed to form co-crystals when its concentration is below 75 wt%. These fullerene molecules evolve into approximately 15 nm sized agglomerates to improve the electron transport when their concentration is above 75 wt%. Thermal annealing gives these agglomerates mobility to form micrometer sized crystals causing a decrease of device performance. These findings can therefore correlate the morphology, especially in terms of fullerene agglomerates, vertical concentration profile and percolating structure they formed, with the device performance and provide valuable guidance for optimal morphology design of polymer: fullerene solar cells.